GP10A thru GP10Y
Vishay General Semiconductor
Glass Passivated Junction Rectifier
Major Ratings and Characteristics
I
F(AV)
V
RRM
I
FSM
I
R
V
F
T
j
max.
1.0 A
50 V to 1600 V
30 A, 25 A
5.0 µA
1.1 V, 1.2 V, 1.3 V
175 °C
®
ted*
aten
P
* Glass-plastic encapsulation
technique is covered by
Patent No. 3,996,602,
brazed-lead assembly
by Patent No. 3,930,306
DO-204AL (DO-41)
Features
• Superectifier structure for High Reliability
application
• Cavity-free glass-passivated junction
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• Meets environmental standard MIL-S-19500
• Solder Dip 260 °C, 40 seconds
Mechanical Data
Case:
DO-204AL, molded epoxy over glass body
Epoxy meets UL-94V-0 Flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity:
Color band denotes cathode end
Typical Applications
For use in general purpose rectification of power sup-
plies, inverters, converters and freewheeling diodes
for both consumer and automotive applications
Maximum Ratings
(T
A
= 25 °C unless otherwise noted)
Parameter
Maximum repetitive peak reverse voltage
Maximum average forward rectified current 0.375"
(9.5 mm) lead length (See fig. 1)
Peak forward surge current 8.3 ms single half sine-
wave superimposed on rated load
Maximum full load reverse current, full cycle average,
0.375" (9.5 mm) lead lengths at T
A
= 75 °C
Operating junction and storage temperature range
Symbol
V
RRM
I
F(AV)
I
FSM
I
R(AV)
T
J
, T
STG
- 65 to + 175
30
30
- 65 to + 150
A
B
D
G
J
K
M
1.0
25
N
Q
T
V
W
Y
Unit
V
A
A
µA
°C
50 to 1600 V (See Fig. 5)
Document Number 88637
14-Sep-05
www.vishay.com
1
GP10A thru GP10Y
Vishay General Semiconductor
Electrical Characteristics
(T
A
= 25 °C unless otherwise noted)
Parameter
Maximum
instantaneous forward
voltage
Maximum DC reverse
current at rated DC
blocking voltage
Test condition
at 1.0 A
Symbol
V
F
A
B
D
1.1
G
J
K
M
1.2
N
Q
T
V
W
1.3
Y
Unit
V
T
A
= 25 °C
T
A
= 125 °C
I
R
5.0
50
3.0
8.0
7.0
5.0
µA
Typical reverse recovery at I
F
= 0.5 A, I
R
= 1.0 A,
time
I
rr
= 0.25 A
Typical junction
capacitance
at 4.0 V, 1 MHz
t
rr
C
J
µs
pF
Thermal Characteristics
(T
A
= 25 °C unless otherwise noted)
Parameter
Typical thermal resistance
(1)
Notes:
(1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, P.C.B. mounted
Symbol
R
θJA
A
B
D
G
J
K
M
55
N
Q
T
V
W
Y
Unit
°C/W
Ratings and Characteristics Curves
(T
A
= 25
°C
unless otherwise noted)
Average Forward Rectified Current (A)
1.0
30
0.8
60 Hz
Resistive or
Inductive Load
Peak Forward Surge Current (A)
GP10A -- GP10M
T
J
= T
J
max.
8.3
ms Single Half Sine-Wave
25
0.6
GP10N -- GP10Y
20
GP10A -- GP10M
0.4
15
GP10N -- GP10Y
10
0.2
0.375" (9.5mm) Lead Length
0
20
40
60
80
100
120
140
160
180
5.0
1
10
100
Ambient Temperature, °C
Number
of Cycles at 60 Hz
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-repetitive Peak Forward Surge Current
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Document Number 88637
14-Sep-05
GP10A thru GP10Y
Vishay General Semiconductor
30
Instantaneous Forward Current (A)
10
T
J
= 25 °C
Pulse
Width
= 300
µs
1% Duty Cycle
1
0.1
GP10A to GP10J
GP10K to GP10Q
GP10T to GP10Y
0.8
1.0
1.2
1.4
1.6
0.01
0.6
GP10A.................50V
GP10B...............100V
GP10D.............. 200V
GP10G.............. 400V
GP10J............... 600V
GP10K.............. 800V
GP10M............1000V
GP10N.............1100V
GP10Q............ 1200V
GP10T............ 1300V
GP10V............ 1400V
GP10W............1500V
GP10Y............ 1600V
Instantaneous Forward
Voltage
(V)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Maximum Repetitive Peak Reverse Voltage, V
RRM
10
20
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50mVp-p
10
Instantaneous Reverse Current (µA)
1
T
J
= 125 °C
0.1
T
J
= 75 °C
0.01
T
J
= 25 °C
Junction Capacitance (pF)
GP10A to GP10J
GP10K to GP10Q
GP10T to GP10Y
1.0
0.1
1
10
100
0.001
0
20
40
60
80
100
Percent of Rated Peak Reverse
Voltage
(%)
Reverse
Voltage
(V)
Figure 4. Typical Reverse Characteristics
Figure 6. Typical Junction Capacitance
Package outline dimensions in inches (millimeters)
DO-204AL (DO-41)
1.0 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
DIA.
0.205 (5.2)
0.160 (4.1)
1.0 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
DIA.
NOTE:
Lead diameter is
0.026 (0.66)
for suffix “E” part numbers
0.023 (0.58)
Document Number 88637
14-Sep-05
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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