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GP2D008A120C

DIODE SCHTKY 1.2KV 24A TO252-2L

器件类别：半导体    分立半导体   

厂商名称：Global Communications

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参数 预览
器件参数
参数名称
属性值
二极管类型
碳化硅肖特基
电压 - DC 反向（Vr）（最大值）
1200V
电流 - 平均整流（Io）
24A（DC）
不同 If 时的电压 - 正向（Vf
1.8V @ 8A
速度
无恢复时间 > 500mA（Io）
反向恢复时间（trr）
0ns
不同 Vr 时的电流 - 反向漏电流
20µA @ 1200V
不同 Vr，F 时的电容
508pF @ 1V，1MHz
安装类型
表面贴装
封装/外壳
TO-252-3，DPak（2 引线 + 接片），SC-63
供应商器件封装
TO-252-2L（DPAK）
工作温度 - 结
-50°C ~ 175°C
文档预览
GP2D008A120C
1200V SiC Schottky Diode
Amp+
TM
Features
•
High surge current capable
•
Zero reverse recovery current
•
High bandwidth
•
Fast, temperature-independent switching
Amp+
TM
Benefits
•
Unipolar rectifier
VDC
Q
C
I
F
1200 V
35 nC
8 A
Amp+
TM
Applications
•
Motor drives
•
Zero switching loss
•
Higher efficiency
•
Smaller heat sink
•
Parallel devices with thermal stability
Part #
GP2D008A120C
•
Switch mode power supplies
•
Power factor correction
Package
TO-252-2L
(DPAK)
Marking
2D008A120
Maximum Rating
Symbol
Conditions
T
C
=25 °C, T
j
=175 °C
Value
24
13
9
64
40
160
17
7
1200
50
125
-55…175
260
1
Unit
Continuous forward current
Surge non-repetitive forward current
sine halfwave
Non-repetitive peak forward current
i
2
t
value
Repetitive peak reverse voltage
Diode
dv/dt
ruggedness
Power dissipation
Operating & storage temperature
Soldering temperature
Mounting torque
I
F
T
C
=125 °C, T
j
=175 °C
T
C
=150 °C, T
j
=175 °C
T
C
=25 °C, t
p
=8.3 ms
T
C
=150 °C, t
p
=8.3 ms
T
C
=25 °C, t
p
=10
ms
T
C
=25 °C, t
p
=8.3 ms
T
C
=150 °C, t
p
=8.3 ms
T
j
=25 °C
Turn-on slew rate, repetitive
A
I
F,SM
I
F,max
i
2
dt
V
RRM
dv/dt
P
tot
T
J
, T
storage
T
solder
A
2
s
V
V/ns
W
°C
°C
N-m
T
C
=25 °C
Continuous
Wave soldering leads
M3 Screw
Electrical Characteristics,
at T
j
=25 °C, unless otherwise specified
Static Characteristics
DC blocking voltage
Diode forward voltage
Reverse current
Symbol
V
DC
V
F
I
R
Conditions
I
R
=0.1mA
I
F
=8A, T
j
=25
o
C
I
F
=8A, T
j
=175 C
V
R
=1,200V, T
j
=25 C
V
R
=1,200V, T
j
=175 C
o
o
o
min.
1200
-
-
-
-
Values
typ.
-
1.60
2.20
2.0
50
max.
-
1.80
2.70
20
480
Unit
V
m
A
8/27/2015
Rev 2
www.gptechgroup.com
p.1
1200V SiC Schottky Diode
Parameter
AC Characteristics
Total capacitive charge
Switching time
Q
C
t
C
Symbol
Amp
+
TM
Conditions
min.
GP2D008A120C
Values
typ.
max.
Unit
V
R
=1,200V, T
j
=25
o
C
di
F
/dt=200 A/ms
T
j
=150 °C
V
R
=1 V, f=1 MHz
V
R
=600V, f=1 MHz
V
R
=1,200V, f=1 MHz
-
-
-
-
-
35
-
508
30
29
-
<10
-
-
-
nC
ns
Total capacitance
C
pF
Thermal Characteristics
Thermal resistance, junction-case
Typical Performance
R
thJC
Package (flange) mount
-
1.20
-
o
C/W
Fig. 1 Forward Characteristics
(parameterized on T
j
)
12
25°C
Fig. 2 Reverse Characteristics
(parameterized on Tj)
1.E-02
10
8
75°C
125°C
1.E-03
1.E-04
25°C
75°C
125°C
175°C
6
I
R
(A)
1.5
2.0
2.5
3.0
3.5
I
F
(A)
175°C
1.E-05
1.E-06
1.E-07
1.E-08
1.E-09
4
2
0
0.0
0.5
1.0
0
200
400
600
800
1,000
1,200
V
F
(V)
V
R
(V)
Fig. 3 Power Derating
140
120
100
Fig. 4 Current Derating
90
T
j
=175
o
C
80
70
T
j
=175
o
C
Duty cycle
100%
50%
P
Total
(W)
60
30%
20%
10%
I
F
(A)
25
75
125
175
80
60
40
20
0
50
40
30
20
10
0
25
75
125
175
T
C
(
o
C)
T
C
(
o
C)
8/27/2015
Rev 2
www.gptechgroup.com
p.2
1200V SiC Schottky Diode
Fig. 5 Capacitance
600
Amp
+
TM
Fig. 6 Recovery Charge
40
GP2D008A120C
T
j
=25
o
C
500
400
300
200
100
0
1
10
100
1000
35
30
T
j
=25
o
C
Q
rr
(nC)
C
(pF)
25
20
15
10
5
0
1
10
100
1000
V
r
(V)
V
r
(V)
Package Dimensions
Package TO-252-2L (DPAK)
Note
RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with
EU Directive 2011/65/EC (RoHS2), as implemented March, 2013. RoHS Declarations for this product can be obtained from the Product Documentation sections of www.gptechgroup.com.
REACh Compliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemi- cal Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable
future,please contact our office at GPTG Headquarters in Lake Forest, California to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request.
This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property
damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems,
or air traffic control.
Global Power Technologies Group Inc., Reserves the right to make changes to the product specifications and data in this docum ent without notice.
8/27/2015
Rev 2
www.gptechgroup.com
p.3
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