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GP30A/4F-E3

DIODE 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode

器件类别:分立半导体    二极管   

厂商名称:Vishay(威世)

厂商官网:http://www.vishay.com

器件标准:  

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
Objectid
2041632167
零件包装代码
DO-201AD
包装说明
O-PALF-W2
针数
2
Reach Compliance Code
unknown
ECCN代码
EAR99
YTEOL
6.08
其他特性
FREE WHEELING DIODE, LOW LEAKAGE CURRENT
应用
GENERAL PURPOSE
外壳连接
ISOLATED
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JEDEC-95代码
DO-201AD
JESD-30 代码
O-PALF-W2
JESD-609代码
e3
最大非重复峰值正向电流
125 A
元件数量
1
相数
1
端子数量
2
最高工作温度
175 °C
最低工作温度
-65 °C
最大输出电流
3 A
封装主体材料
PLASTIC/EPOXY
封装形状
ROUND
封装形式
LONG FORM
认证状态
Not Qualified
最大重复峰值反向电压
50 V
最大反向恢复时间
5 µs
表面贴装
NO
端子面层
MATTE TIN
端子形式
WIRE
端子位置
AXIAL
文档预览
GP30A thru GP30M
Vishay General Semiconductor
Glass Passivated Junction Plastic Rectifiers
Major Ratings and Characteristics
I
F(AV)
V
RRM
I
FSM
I
R
V
F
T
j
max.
3.0 A
50 V to 1000 V
125 A
5.0 µA
1.2 V, 1.1 V
175 °C
®
ted*
aten
P
* Glass-plastic encapsulation
technique is covered by
Patent No. 3,996,602, and
brazed-lead assembly by
Patent No. 3,930,306
DO-201AD
Features
• Superectifier structure for High Reliability
condition
• Cavity-free glass-passivated junction
• Low leakage current, typical I
R
less than 0.1µA
• Low forward voltage drop
• High forward surge capability
• Meets environmental standard MIL-S-19500
• Solder Dip 260 °C, 40 seconds
Mechanical Data
Case:
DO-201AD, molded epoxy over glass body
Epoxy meets UL-94V-0 Flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity:
Color band denotes cathode end
Typical Applications
For use in high voltage rectification of power supply,
inverters, converters, freewheeling diodes and snub-
ber circuit application
Maximum Ratings
(T
A
= 25 °C unless otherwise noted)
Parameter
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current 0.375"
(9.5 mm) lead length at T
A
= 55 °C
Peak forward surge current 8.3 ms single half sine-
wave superimposed on rated load
Maximum full load reverse current, full cycle average
0.375" (9.5 mm) lead length at T
A
= 55 °C
Operating junction and storage temperature range
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
R(AV)
T
J
, T
STG
GP30A GP30B GP30D GP30G GP30J GP30K GP30M Unit
50
35
50
100
70
100
200
140
200
400
280
400
3.0
125
100
- 65 to + 175
600
420
600
800
560
800
1000
700
1000
V
V
V
A
A
µA
°C
Document Number 88640
13-Sep-05
www.vishay.com
1
GP30A thru GP30M
Vishay General Semiconductor
Electrical Characteristics
(T
A
= 25 °C unless otherwise noted)
Parameter
Maximum
instantaneous
forward voltage
Maximum reverse
current at rated DC
blocking voltage
Maximum reverse
recovery time
Typical junction
capacitance
Test condition
at 3.0 A
Symbol
V
F
GP30A
GP30B GP30D GP30G
GP30J
1.1
GP30K GP30M
Unit
V
1.2
T
A
= 25 °C
T
A
= 125 °C
I
F
= 0.5 A, I
R
= 1.0 V,
I
rr
= 0.25 A
at 4.0 V, 1 MHz
I
R
5.0
100
5.0
40
µA
t
rr
C
J
µs
pF
Thermal Characteristics
(T
A
= 25 °C unless otherwise noted)
Parameter
Typical thermal resistance
(1)
Notes:
(1) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5 mm) lead length, P.C.B. mounted
Symbol
R
θJA
R
θJL
GP30A GP30B GP30D GP30G
20
10
GP30J
GP30K GP30M
Unit
°C/W
Ratings and Characteristics Curves
(T
A
= 25
°C
unless otherwise noted)
Average Forward Rectified Current (A)
4.0
200
Peak Forward Surge Current (A)
T
J
= T
J
max.
8.3
ms Single Half Sine-Wave
100
3.0
60 Hz
Resistive or
Inductive Load
2.0
1.0
0.375” (9.5mm) Lead Length
0
0
25
50
75
100
125
150
175
10
1
10
100
Ambient Temperature, °C
Number
of Cycles at 60 Hz
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
www.vishay.com
2
Document Number 88640
13-Sep-05
GP30A thru GP30M
Vishay General Semiconductor
100
100
T
J
= 25 °C
Pulse
Width
= 300
µs
1% Duty Cycle
10
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50mVp-p
Instantaneous Forward Current (A)
1
0.1
0.6
Junction Capacitance (pF)
10
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1
10
100
Instantaneous Forward
Voltage
(V)
Reverse
Voltage
(V)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Typical Junction Capacitance
10
Instantaneous Reverse Leakage
Current (µA)
T
J
= 125 °C
1
T
J
= 75 °C
0.1
T
J
= 25 °C
0.01
0
20
40
60
80
100
Percent of Rated Peak Reverse
Voltage
(%)
Figure 4. Typical Reverse Characteristics
Package outline dimensions in inches (millimeters)
DO-201AD
1.0 (25.4)
Min.
0.210 (5.3)
0.190 (4.8)
Dia.
0.375 (9.5)
0.285 (7.2)
1.0 (25.4)
Min.
0.052 (1.32)
0.048 (1.22)
Dia.
Document Number 88640
13-Sep-05
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
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