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GS1M

1 A, 1000 V, SILICON, SIGNAL DIODE, DO-214AC

器件类别:半导体    分立半导体   

厂商名称:MCC

厂商官网:http://www.mccsemi.com

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MCC
Features
  omponents
21201 Itasca Street Chatsworth

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GS1A
THRU
GS1M
For Surface Mount Applications
Extremely Low Thermal Resistance
Easy Pick And Place
High Temp Soldering: 250°C for 10 Seconds At Terminals
1 Amp
Silicon Rectifier
50 to 1000 Volts
DO-214AC
(SMAJ) (High Profile)
H
Cathode Band
Maximum Ratings
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
Maximum Thermal Resistance; 15
°C/W
Junction To Lead
MCC
Catalog
Number
GS1A
GS1B
GS1D
GS1G
GS1J
GS1K
GS1M
Device
Marking
GS1A
GS1B
GS1D
GS1G
GS1J
GS1K
GS1M
Maximum
Recurrent
Peak Reverse
Voltage
50V
100V
200V
400V
600V
800V
1000V
Maximum
RMS
Voltage
35V
70V
140V
280V
420V
560V
700V
Maximum
DC
Blocking
Voltage
50V
100V
200V
400V
600V
800V
1000V
DIM
A
B
C
D
E
F
G
H
J
J
A
C
E
F
G
D
B
DIMENSIONS
INCHES
MIN
.078
.067
.002
---
.035
.065
.205
.160
.100
MM
MIN
1.98
1.70
.05
---
.89
1.65
5.21
4.06
2.57
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
current
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
Typical Junction
Capacitance
I
F(AV)
I
FSM
V
F
I
R
C
J
1.0A
30A
1.1V
10µA
50µA
15pF
T
J
= 75°C
8.3ms, half sine,
I
FM
= 1.0A;
T
J
= 25°C*
T
J
= 25°C
T
J
= 125°C
Measured at
1.0MHz, V
R
=4.0V
MAX
.116
.089
.008
.02
.055
.096
.224
.180
.112
MAX
2.95
2.25
.20
.51
1.40
2.45
5.69
4.57
2.84
NOTE
SUGGESTED SOLDER
PAD LAYOUT
0.090”
0.085”
*Pulse test: Pulse width 300
µsec,
Duty cycle 2%
0.070”
www.mccsemi.com
GS1A thru GS1M
Figure 1
Typical Forward Characteristics
20
10
6
4
2
Amps
1
.6
.4
.2
25°C
.1
.06
.04
.02
.01
.4
.6
.8
Volts
Instantaneous Forward Current - Amperes
versus
Instantaneous Forward Voltage - Volts
1.0
1.2
1.4
Amps
1.4
1.2
1.0
.8
.6
.4
Resistive or
.2 Inductive Load
0
0
20
40
60
Figure 4
Forward Derating Curve
1
10
Cycles
Amps
36
30
24
18
12
6
MCC
Figure 3
Maximum Overload Surge Current
-55°C to +150°C
100
Peak Forward Current - Amperes
versus
Number of Cycles at 60Hz
80 100 120 140 160 180 200
°C
Figure 2
Junction Capacitance
Average Forward Rectified Current - Amperes
versus
Ambient Temperature -
°C
100
60
40
20
pF
10
6
4
2
1
.1
.2
.4
1
Volts
2
4
10
20
40
100
200
400
1000
Median
Typical
Distribution
Junction Capacitance - pF
versus
Reverse Junction Potential (Applied V + 0.7 Volts) - Volts
www.mccsemi.com
GS1A thru GS1M
Figure 5
Peak Forward Surge Current
1000
600
400
200
Amps
100
60
40
20
10
.01 .02
.06 .1
.2
mS
Peak Forward Surge Current - Amperes
versus
Pulse Duration - Milliseconds (mS)
.6
1
2
6 10
MCC
Figure 6
New SMA Assembly
Round Lead
Process
www.mccsemi.com
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参数对比
与GS1M相近的元器件有:GS1B、GS1D、GS1A、GS1G、GS1J、GS1K。描述及对比如下:
型号 GS1M GS1B GS1D GS1A GS1G GS1J GS1K
描述 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 200 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 800 V, SILICON, SIGNAL DIODE, DO-214AC
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