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GS8150F32T-8.5I

Standard SRAM, 512KX32, 8.5ns, CMOS, PQFP100

器件类别:存储    存储   

厂商名称:GSI Technology

厂商官网:http://www.gsitechnology.com/

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器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
GSI Technology
包装说明
QFP, QFP100,.63X.87
Reach Compliance Code
compliant
最长访问时间
8.5 ns
I/O 类型
COMMON
JESD-30 代码
R-PQFP-G100
JESD-609代码
e0
内存密度
16777216 bit
内存集成电路类型
STANDARD SRAM
内存宽度
32
湿度敏感等级
3
端子数量
100
字数
524288 words
字数代码
512000
工作模式
SYNCHRONOUS
最高工作温度
85 °C
最低工作温度
-40 °C
组织
512KX32
输出特性
3-STATE
封装主体材料
PLASTIC/EPOXY
封装代码
QFP
封装等效代码
QFP100,.63X.87
封装形状
RECTANGULAR
封装形式
FLATPACK
并行/串行
PARALLEL
电源
2.5/3.3,3.3 V
认证状态
Not Qualified
最小待机电流
3.14 V
表面贴装
YES
技术
CMOS
温度等级
INDUSTRIAL
端子面层
Tin/Lead (Sn/Pb)
端子形式
GULL WING
端子节距
0.635 mm
端子位置
QUAD
文档预览
Preliminary
GS8150F18/32/36T-7/8/8.5/10/11
100-Pin TQFP
Commercial Temp
Industrial Temp
Features
• Flow Through mode operation; Pin 14 = No Connect
• 3.3 V +10%/–5% core power supply
• 2.5 V or 3.3 V I/O supply
• LBO pin for Linear or Interleaved Burst mode
• Internal input resistors on mode pins allow floating mode pins
• Byte Write (BW) and/or Global Write (GW) operation
• Internal self-timed write cycle
• Automatic power-down for portable applications
• JEDEC-standard 100-lead TQFP package
-7
7.0
Flow
t
KQ
8.5
Through
tCycle
2-1-1-1 Curr (x18) 205
Curr (x32) 240
Curr (x36) 240
-7.5
7.5
10
185
210
210
-8
8
10
185
210
210
-8.5
8.5
10
185
210
210
-10 -11 Unit
10 11 ns
10 15 ns
185 140 mA
210 160 mA
210 160 mA
1M x 18, 512K x 32, 512K x 36
16Mb Sync Burst SRAMs
7 ns–11 ns
3.3 V V
DD
2.5 V or 3.3 V I/O
should be designed with V
SS
connected to the FT pin location
to ensure the broadest access to multiple vendor sources.
Boards designed with FT pin pads tied low may be stuffed with
GSI’s pipeline/flow through-configurable Burst RAMs or any
vendor’s flow through or configurable Burst SRAM. Boards
designed with the FT pin location tied high or floating must
employ a non-configurable flow through Burst RAM, like this
RAM, to achieve flow through functionality.
Byte Write and Global Write
Byte write operation is performed by using Byte Write enable
(BW) input combined with one or more individual byte write
signals (Bx). In addition, Global Write (GW) is available for
writing all bytes at one time, regardless of the Byte Write
control inputs.
Sleep Mode
Low power (Sleep mode) is attained through the assertion
(High) of the ZZ signal, or by stopping the clock (CK).
Memory data is retained during Sleep mode.
Functional Description
Applications
The GS8150F18/32/36T is a 18,874,368-bit (16,777,216-bit
for x32 version) high performance synchronous SRAM with a
2-bit burst address counter. Although of a type originally
developed for Level 2 Cache applications supporting high
performance CPUs, the device now finds application in
synchronous SRAM applications, ranging from DSP main
store to networking chip set support.
Core and Interface Voltages
The GS8150F18/32/36T operates on a 3.3 V power supply. All
input are 3.3 V- and 2.5 V-compatible. Separate output power
(V
DDQ
) pins are used to decouple output noise from the
internal circuits and are 3.3 V- and 2.5 V-compatible.
Controls
Addresses, data I/Os, chip enables (E1, E2, E3), address burst
control inputs (ADSP, ADSC, ADV), and write control inputs
(Bx, BW, GW) are synchronous and are controlled by a
positive-edge-triggered clock input (CK). Output enable (G)
and power down control (ZZ) are asynchronous inputs. Burst
cycles can be initiated with either ADSP or ADSC inputs. In
Burst mode, subsequent burst addresses are generated
internally and are controlled by ADV. The burst address
counter may be configured to count in either linear or
interleave order with the Linear Burst Order (LBO) input. The
Burst function need not be used. New addresses can be loaded
on every cycle with no degradation of chip performance.
Designing For Compatibility
The JEDEC standard for Burst RAMS calls for a FT mode pin
option on Pin 14. Board sites for flow through Burst RAMS
Rev: 1.01 11/2000
1/23
© 2000, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS8150F18/32/36T-7/8/8.5/10/11
GS8150F18 100-Pin TQFP Pinout
NC
NC
NC
V
DDQ
V
SS
NC
NC
DQ
B1
DQ
B2
V
SS
V
DDQ
DQ
B3
DQ
B4
NC
V
DD
NC
V
SS
DQ
B5
DQ
B6
V
DDQ
V
SS
DQ
B7
DQ
B8
DQ
B9
NC
V
SS
V
DDQ
NC
NC
NC
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
1
80
2
79
3
78
4
77
5
76
6
75
7
74
8
73
9
72
1M x 18
10
71
Top View
11
70
12
69
13
68
14
67
15
66
16
65
17
64
18
63
19
62
20
61
21
60
22
59
23
58
24
57
25
56
26
55
27
54
28
53
29
52
30
51
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
A
6
A
7
E
1
E
2
NC
NC
B
B
B
A
E
3
V
DD
V
SS
CK
GW
BW
G
ADSC
ADSP
ADV
A
8
A
9
A
19
NC
NC
V
DDQ
V
SS
V
SS
NC
DQ
A9
DQ
A8
DQ
A7
V
SS
V
DDQ
DQ
A6
DQ
A5
V
SS
NC
V
DD
ZZ
DQ
A4
DQ
A3
V
DDQ
V
SS
DQ
A2
DQ
A1
NC
NC
V
SS
V
DDQ
NC
NC
NC
Rev: 1.01 11/2000
LBO
A
5
A
4
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
A
3
A
2
A
1
A
0
NC
NC
V
SS
V
DD
A
18
A
17
A
10
A
11
A
12
A
13
A
14
A
15
A
16
2/23
© 2000, Giga Semiconductor, Inc.
Preliminary
GS8150F18/32/36T-7/8/8.5/10/11
GS8150F32 100-Pin TQFP Pinout
NC
DQ
C8
DQ
C7
V
DDQ
V
SS
DQ
C6
DQ
C5
DQ
C4
DQ
C3
V
SS
V
DDQ
DQ
C2
DQ
C1
NC
V
DD
NC
V
SS
DQ
D1
DQ
D2
V
DDQ
V
SS
DQ
D3
DQ
D4
DQ
D5
DQ
D6
V
SS
V
DDQ
DQ
D7
DQ
D8
NC
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
1
80
2
79
3
78
4
77
5
76
6
75
7
74
8
73
9
72
512K x 32
10
71
Top View
11
70
12
69
13
68
14
67
15
66
16
65
17
64
18
63
19
62
20
61
21
60
22
59
23
58
24
57
25
56
26
55
27
54
28
53
29
52
30
51
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
A
6
A
7
E
1
E
2
B
D
B
C
B
B
B
A
E
3
V
DD
V
SS
CK
GW
BW
G
ADSC
ADSP
ADV
A
8
A
9
NC
DQ
B8
DQ
B7
V
DDQ
V
SS
DQ
B6
DQ
B5
DQ
B4
DQ
B3
V
SS
V
DDQ
DQ
B2
DQ
B1
V
SS
NC
V
DD
ZZ
DQ
A1
DQ
A2
V
DDQ
V
SS
DQ
A3
DQ
A4
DQ
A5
DQ
A6
V
SS
V
DDQ
DQ
A7
DQ
A8
NC
Rev: 1.01 11/2000
LBO
A
5
A
4
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
A
3
A
2
A
1
A
0
NC
NC
V
SS
V
DD
A
18
A
17
A
10
A
11
A
12
A
13
A
14
A
15
A
16
3/23
© 2000, Giga Semiconductor, Inc.
Preliminary
GS8150F18/32/36T-7/8/8.5/10/11
GS8150F36 100-Pin TQFP Pinout
DQ
C9
DQ
C8
DQ
C7
V
DDQ
V
SS
DQ
C6
DQ
C5
DQ
C4
DQ
C3
V
SS
V
DDQ
DQ
C2
DQ
C1
NC
V
DD
NC
V
SS
DQ
D1
DQ
D2
V
DDQ
V
SS
DQ
D3
DQ
D4
DQ
D5
DQ
D6
V
SS
V
DDQ
DQ
D7
DQ
D8
DQ
D9
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
1
80
2
79
3
78
4
77
5
76
6
75
7
74
8
73
9
72
512K x 36
10
71
Top View
11
70
12
69
13
68
14
67
15
66
16
65
17
64
18
63
19
62
20
61
21
60
22
59
23
58
24
57
25
56
26
55
27
54
28
53
29
52
30
51
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
A
6
A
7
E
1
E
2
B
D
B
C
B
B
B
A
E
3
V
DD
V
SS
CK
GW
BW
G
ADSC
ADSP
ADV
A
8
A
9
DQ
B9
DQ
B8
DQ
B7
V
DDQ
V
SS
DQ
B6
DQ
B5
DQ
B4
DQ
B3
V
SS
V
DDQ
DQ
B2
DQ
B1
V
SS
NC
V
DD
ZZ
DQ
A1
DQ
A2
V
DDQ
V
SS
DQ
A3
DQ
A4
DQ
A5
DQ
A6
V
SS
V
DDQ
DQ
A7
DQ
A8
DQ
A9
Rev: 1.01 11/2000
LBO
A
5
A
4
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
A
3
A
2
A
1
A
0
NC
NC
V
SS
V
DD
A
18
A
17
A
10
A
11
A
12
A
13
A
14
A
15
A
16
4/23
© 2000, Giga Semiconductor, Inc.
Preliminary
GS8150F18/32/36T-7/8/8.5/10/11
TQFP Pin Description
Pin Location
37, 36
35, 34, 33, 32, 100, 99, 82, 81, 44, 45,
46, 47, 48, 49, 50, 43, 42,
80
63, 62, 59, 58, 57, 53, 52
68, 69, 72, 73, 74, 75, 78, 79
13, 12, 9, 8, 7, 6, 3, 2
18, 19, 22, 23, 24, 25, 28, 29
51, 80, 1, 30
58, 59, 62, 63, 68, 69, 72, 73, 74
8, 9, 12, 13, 18, 19, 22, 23, 24
51, 52, 53, 56, 57
75, 78, 79,
1, 2, 3, 6, 7,
25, 28, 29, 30
87
93, 94
95, 96
95, 96
89
88
98, 92
97
86
83
84, 85
64
31
15, 41, 65, 91
5,10,17, 21, 26, 40, 55, 60, 67, 71, 76, 90
4, 11, 20, 27, 54, 61, 70, 77
14, 16, 38, 39, 66
Symbol
A
0
, A
1
A
2
–A
18
A
19
DQ
A1
–DQ
A8
DQ
B1
–DQ
B8
DQ
C1
–DQ
C8
DQ
D1
–DQ
D8
DQ
A9
, DQ
B9
,
DQ
C9
, DQ
D9
DQ
A1
–DQ
A9
DQ
B1
–DQ
B9
NC
BW
B
A
, B
B
B
C
, B
D
NC
CK
GW
E
1
, E
3
E
2
G
ADV
ADSP, ADSC
ZZ
LBO
V
DD
V
SS
V
DDQ
NC
Typ
e
I
I
I
I/O
Description
Address field LSBs and Address Counter preset Inputs
Address Inputs
Address Inputs (x18 versions)
Data Input and Output pins (x32, x36 Version)
I/O
I/O
Data Input and Output pins (x36 Version)
Data Input and Output pins (x18 Version)
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
No Connect (x18 Version)
Byte Write—Writes all enabled bytes; active low
Byte Write Enable for DQ
A
, DQ
B
Data I/Os; active low
Byte Write Enable for DQ
C
, DQ
D
Data I/Os; active low
(x32, x36 Version)
No Connect (x18 Version)
Clock Input Signal; active high
Global Write Enable—Writes all bytes; active low
Chip Enable; active low
Chip Enable; active high
Output Enable; active low
Burst address counter advance enable; active low
Address Strobe (Processor, Cache Controller); active low
Sleep Mode control; active high
Linear Burst Order mode; active low
Core power supply
I/O and Core Ground
Output driver power supply
No Connect
Rev: 1.01 11/2000
5/23
© 2000, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
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