Preliminary
GS816118B(T/D)/GS816132B(D)/GS816136B(T/D)
100-Pin TQFP & 165-Bump BGA
Commercial Temp
Industrial Temp
Features
• FT pin for user-configurable flow through or pipeline
operation
• Single Cycle Deselect (SCD) operation
• IEEE 1149.1 JTAG-compatible Boundary Scan
• 2.5 V or 3.3 V +10%/–10% core power supply
• 2.5 V or 3.3 V I/O supply
• LBO pin for Linear or Interleaved Burst mode
• Internal input resistors on mode pins allow floating mode pins
• Default to Interleaved Pipeline mode
• Byte Write (BW) and/or Global Write (GW) operation
• Internal self-timed write cycle
• Automatic power-down for portable applications
• JEDEC-standard
100-lead TQFP
100-pin TQFP and 165-bump
BGA packages
• Pb-Free 100-pin TQFP and 165-bump BGA packages available
1M x 18, 512K x 32, 512K x 36
18Mb Sync Burst SRAMs
300 MHz–150 MHz
2.5 V or 3.3 V V
DD
2.5 V or 3.3 V I/O
either linear or interleave order with the Linear Burst Order (LBO)
input. The Burst function need not be used. New addresses can be
loaded on every cycle with no degradation of chip performance.
Flow Through/Pipeline Reads
The function of the Data Output register can be controlled by the
user via the FT mode pin (Pin 14). Holding the FT mode pin low
places the RAM in Flow Through mode, causing output data to
bypass the Data Output Register. Holding FT high places the
RAM in Pipeline mode, activating the rising-edge-triggered Data
Output Register.
SCD Pipelined Reads
The GS816118B(T/D)/GS816132B(D)/GS816136B(T/D) is a
SCD (Single Cycle Deselect) pipelined synchronous SRAM. DCD
(Dual Cycle Deselect) versions are also available. SCD SRAMs
pipeline deselect commands one stage less than read commands.
SCD RAMs begin turning off their outputs immediately after the
deselect command has been captured in the input registers.
Byte Write and Global Write
Byte write operation is performed by using Byte Write enable
(BW) input combined with one or more individual byte write
signals (Bx). In addition, Global Write (GW) is available for
writing all bytes at one time, regardless of the Byte Write control
inputs.
Sleep Mode
Low power (Sleep mode) is attained through the assertion (High)
of the ZZ signal, or by stopping the clock (CK). Memory data is
retained during Sleep mode.
Core and Interface Voltages
The GS816118B(T/D)/GS816132B(D)/GS816136B(T/D)
operates on a 2.5 V or 3.3 V power supply. All input are 3.3 V and
2.5 V compatible. Separate output power (V
DDQ
) pins are used to
decouple output noise from the internal circuits and are 3.3 V and
2.5 V compatible.
Functional Description
Applications
The GS816118B(T/D)/GS816132B(D)/GS816136B(T/D) is an
18,874,368-bit high performance synchronous SRAM with a 2-bit
burst address counter. Although of a type originally developed for
Level 2 Cache applications supporting high performance CPUs,
the device now finds application in synchronous SRAM
applications, ranging from DSP main store to networking chip set
support.
Controls
Addresses, data I/Os, chip enable (E1), address burst control
inputs (ADSP, ADSC, ADV) and write control inputs (Bx, BW,
GW) are synchronous and are controlled by a positive-edge-
triggered clock input (CK). Output enable (G) and power down
control (ZZ) are asynchronous inputs. Burst cycles can be initiated
with either ADSP or ADSC inputs. In Burst mode, subsequent
burst addresses are generated internally and are controlled by
ADV. The burst address counter may be configured to count in
Parameter Synopsis
-300
Pipeline
3-1-1-1
t
KQ
tCycle
Curr
(x18)
Curr
(x32/x36)
t
KQ
tCycle
Curr
(x18)
Curr
(x32/x36)
2.5
3.3
335
390
5.3
5.3
230
270
-250
2.5
4.0
280
330
5.5
5.5
210
240
-200
3.0
5.0
230
270
6.5
6.5
185
205
-150
3.8
6.7
185
210
7.5
7.5
170
190
Unit
ns
ns
mA
mA
ns
ns
mA
mA
Flow Through
2-1-1-1
Rev: 1.02 2/2005
1/36
© 2004, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS816118B(T/D)/GS816132B(D)/GS816136B(T/D)
GS816118B 100-Pin TQFP Pinout
V
DDQ
V
SS
NC
NC
DQ
B
DQ
B
V
SS
V
DDQ
DQ
B
DQ
B
FT
V
DD
NC
V
SS
DQ
B
DQ
B
V
DDQ
V
SS
DQ
B
DQ
B
DQP
B
NC
V
SS
V
DDQ
NC
NC
NC
NC
NC
NC
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
1
80
2
79
3
78
4
77
5
76
6
75
7
74
8
73
9
72
1M X 18
10
71
Top View
11
70
12
69
13
68
14
67
15
66
16
65
17
64
18
63
19
62
20
61
21
60
22
59
23
58
24
57
25
56
26
55
27
54
28
53
29
52
30
51
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
A
A
E
1
A
NC
NC
B
B
B
A
A
V
DD
V
SS
CK
GW
BW
G
ADSC
ADSP
ADV
A
A
A
NC
NC
V
DDQ
V
SS
NC
DQP
A
DQ
A
DQ
A
V
SS
V
DDQ
DQ
A
DQ
A
V
SS
NC
V
DD
ZZ
DQ
A
DQ
A
V
DDQ
V
SS
DQ
A
DQ
A
NC
NC
V
SS
V
DDQ
NC
NC
NC
Rev: 1.02 2/2005
LBO
A
A
A
A
A
1
A
0
TMS
TDI
V
SS
V
DD
TDO
TCK
A
A
A
A
A
A
A
2/36
© 2004, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS816118B(T/D)/GS816132B(D)/GS816136B(T/D)
GS816136B 100-Pin TQFP Pinout
DQP
C
DQ
C
DQ
C
V
DDQ
V
SS
DQ
C
DQ
C
DQ
C
DQ
C
V
SS
V
DDQ
DQ
C
DQ
C
FT
V
DD
NC
V
SS
DQ
D
DQ
D
V
DDQ
V
SS
DQ
D
DQ
D
DQ
D
DQ
D
V
SS
V
DDQ
DQ
D
DQ
D
DQP
D
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
1
80
2
79
3
78
4
77
5
76
6
75
7
74
8
73
9
72
512K x 36
10
71
Top View
11
70
12
69
13
68
14
67
15
66
16
65
17
64
18
63
19
62
20
61
21
60
22
59
23
58
24
57
25
56
26
55
27
54
28
53
29
52
30
51
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
A
A
E
1
A
B
D
B
C
B
B
B
A
A
V
DD
V
SS
CK
GW
BW
G
ADSC
ADSP
ADV
A
A
DQP
B
DQ
B
DQ
B
V
DDQ
V
SS
DQ
B
DQ
B
DQ
B
DQ
B
V
SS
V
DDQ
DQ
B
DQ
B
V
SS
NC
V
DD
ZZ
DQ
A
DQ
A
V
DDQ
V
SS
DQ
A
DQ
A
DQ
A
DQ
A
V
SS
V
DDQ
DQ
A
DQ
A
DQP
A
LBO
A
A
A
A
A
1
A
0
TMS
TDI
V
SS
V
DD
Rev: 1.02 2/2005
3/36
TDO
TCK
A
A
A
A
A
A
A
© 2004, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS816118B(T/D)/GS816132B(D)/GS816136B(T/D)
TQFP Pin Description
Symbol
A
0
, A
1
A
DQ
A
DQ
B
DQ
C
DQ
D
NC
BW
B
A
, B
B,
B
C
, B
D
CK
GW
E
1
G
ADV
ADSP, ADSC
ZZ
TMS
TDI
TDO
TCK
FT
LBO
V
DD
V
SS
V
DDQ
Type
I
I
I/O
—
I
I
I
I
I
I
I
I
I
I
I
O
I
I
I
I
I
I
Description
Address field LSBs and Address Counter preset Inputs
Address Inputs
Data Input and Output pins
No Connect
Byte Write—Writes all enabled bytes; active low
Byte Write Enable for DQ
A
, DQ
B
Data I/Os; active low
Clock Input Signal; active high
Global Write Enable—Writes all bytes; active low
Chip Enable; active low
Output Enable; active low
Burst address counter advance enable; active low
Address Strobe (Processor, Cache Controller); active low
Sleep Mode control; active high
Scan Test Mode Select
Scan Test Data In
Scan Test Data Out
Scan Test Clock
Flow Through or Pipeline mode; active low
Linear Burst Order mode; active low
Core power supply
I/O and Core Ground
Output driver power supply
Rev: 1.02 2/2005
4/36
© 2004, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS816118B(T/D)/GS816132B(D)/GS816136B(T/D)
165 Bump BGA—x18 Commom I/O—Top View (Package D)
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
NC
NC
NC
NC
NC
NC
NC
FT
DQB
DQB
DQB
DQB
DQPB
NC
LBO
2
A
A
NC
DQB
DQB
DQB
DQB
MCL
NC
NC
NC
NC
NC
NC
NC
3
E1
E2
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
NC
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
A
A
4
BB
NC
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
A
A
5
NC
BA
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
NC
TDI
TMS
6
E3
CK
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
A
A1
A0
7
BW
GW
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
NC
TDO
TCK
8
ADSC
G
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
A
A
9
ADV
ADSP
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
NC
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
A
A
10
A
A
NC
NC
NC
NC
NC
NC
DQA
DQA
DQA
DQA
NC
A
A
11
A
NC
DQPA
DQA
DQA
DQA
DQA
ZZ
NC
NC
NC
NC
NC
A
A
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
11 x 15 Bump BGA—13mm x 15 mm Body—1.0 mm Bump Pitch
Rev: 1.02 2/2005
5/36
© 2004, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
