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GS8161E36GD-166IT

Cache SRAM, 512KX36, 7ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FBGA-165

器件类别:存储    存储   

厂商名称:GSI Technology

厂商官网:http://www.gsitechnology.com/

器件标准:

下载文档
器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
GSI Technology
零件包装代码
BGA
包装说明
BGA,
针数
165
Reach Compliance Code
compliant
ECCN代码
3A991.B.2.B
最长访问时间
7 ns
其他特性
FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY
JESD-30 代码
R-PBGA-B165
JESD-609代码
e1
长度
15 mm
内存密度
18874368 bit
内存集成电路类型
CACHE SRAM
内存宽度
36
湿度敏感等级
3
功能数量
1
端子数量
165
字数
524288 words
字数代码
512000
工作模式
SYNCHRONOUS
最高工作温度
85 °C
最低工作温度
-40 °C
组织
512KX36
封装主体材料
PLASTIC/EPOXY
封装代码
BGA
封装形状
RECTANGULAR
封装形式
GRID ARRAY
并行/串行
PARALLEL
峰值回流温度(摄氏度)
260
认证状态
Not Qualified
最大供电电压 (Vsup)
2.7 V
最小供电电压 (Vsup)
2.3 V
标称供电电压 (Vsup)
2.5 V
表面贴装
YES
技术
CMOS
温度等级
INDUSTRIAL
端子面层
Tin/Silver/Copper (Sn/Ag/Cu)
端子形式
BALL
端子节距
1 mm
端子位置
BOTTOM
处于峰值回流温度下的最长时间
NOT SPECIFIED
宽度
13 mm
文档预览
GS8161E18(T/D)/GS816132(D)/GS816136(T/D)
100-Pin TQFP & 165-Bump BGA
Commercial Temp
Industrial Temp
Features
• FT pin for user-configurable flow through or pipeline
operation
• Dual Cycle Deselect (DCD) operation
• IEEE 1149.1 JTAG-compatible Boundary Scan
• 2.5 V or 3.3 V +10%/–10% core power supply
• 2.5 V or 3.3 V I/O supply
• LBO pin for Linear or Interleaved Burst mode
• Internal input resistors on mode pins allow floating mode pins
• Default to Interleaved Pipeline mode
• Byte Write (BW) and/or Global Write (GW) operation
• Internal self-timed write cycle
• Automatic power-down for portable applications
• JEDEC-standard 100-lead TQFP and 165-bump BGA
packages
1M x 18, 512K x 32, 512K x 36
18Mb Sync Burst SRAMs
250 MHz–133 MHz
2.5 V or 3.3 V V
DD
2.5 V or 3.3 V I/O
with the Linear Burst Order (LBO) input. The Burst function need not
be used. New addresses can be loaded on every cycle with no
degradation of chip performance.
Flow Through/Pipeline Reads
The function of the Data Output register can be controlled by the user
via the FT mode pin (Pin 14). Holding the FT mode pin low places the
RAM in Flow Through mode, causing output data to bypass the Data
Output Register. Holding FT high places the RAM in Pipeline mode,
activating the rising-edge-triggered Data Output Register.
DCD Pipelined Reads
The GS8161E18(T/D)/GS8161E32(D)/GS8161E36(T/D) is a DCD
(Dual Cycle Deselect) pipelined synchronous SRAM. SCD (Single
Cycle Deselect) versions are also available. DCD SRAMs pipeline
disable commands to the same degree as read commands. DCD
RAMs hold the deselect command for one full cycle and then begin
turning off their outputs just after the second rising edge of clock.
Functional Description
Applications
The GS8161E18(T/D)/GS8161E32(D)/GS8161E36(T/D) is a
18,874,368-bit high performance synchronous SRAM with a 2-bit
burst address counter. Although of a type originally developed for
Level 2 Cache applications supporting high performance CPUs, the
device now finds application in synchronous SRAM applications,
ranging from DSP main store to networking chip set support.
Byte Write and Global Write
Byte write operation is performed by using Byte Write enable (BW)
input combined with one or more individual byte write signals (Bx).
In addition, Global Write (GW) is available for writing all bytes at one
time, regardless of the Byte Write control inputs.
Sleep Mode
Low power (Sleep mode) is attained through the assertion (High) of
the ZZ signal, or by stopping the clock (CK). Memory data is retained
during Sleep mode.
Controls
Addresses, data I/Os, chip enable (E1), address burst control inputs
(ADSP, ADSC, ADV) and write control inputs (Bx, BW, GW) are
synchronous and are controlled by a positive-edge-triggered clock
input (CK). Output enable (G) and power down control (ZZ) are
asynchronous inputs. Burst cycles can be initiated with either ADSP
or ADSC inputs. In Burst mode, subsequent burst addresses are
generated internally and are controlled by ADV. The burst address
counter may be configured to count in either linear or interleave order
Core and Interface Voltages
The GS8161E18(T/D)/GS8161E32(D)/GS8161E36(T/D) operates on
a 2.5 V or 3.3 V power supply. All input are 3.3 V and 2.5 V
compatible. Separate output power (V
DDQ
) pins are used to decouple
output noise from the internal circuits and are 3.3 V and 2.5 V
compatible.
Parameter Synopsis
-250
Pipeline
3-1-1-1
3.3 V
2.5 V
Flow Through
2-1-1-1
3.3 V
2.5 V
t
KQ
tCycle
Curr (x18)
Curr (x36)
Curr (x18)
Curr (x36)
t
KQ
tCycle
Curr (x18)
Curr (x36)
Curr (x18)
Curr (x36)
2.5
4.0
280
330
275
320
5.5
5.5
175
200
175
200
-225
2.7
4.4
255
300
250
295
6.0
6.0
165
190
165
190
-200
3.0
5.0
230
270
230
265
6.5
6.5
160
180
160
180
-166
3.4
6.0
200
230
195
225
7.0
7.0
150
170
150
170
-150
3.8
6.7
185
215
180
210
7.5
7.5
145
165
145
165
-133
4.0
7.5
165
190
165
185
8.5
8.5
135
150
135
150
Unit
ns
ns
mA
mA
mA
mA
ns
ns
mA
mA
mA
mA
Rev: 2.14 3/2005
1/36
© 1999, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8161E18(T/D)/GS816132(D)/GS816136(T/D)
GS8161E18 100-Pin TQFP Pinout (Package T)
V
DDQ
V
SS
NC
NC
DQ
B
DQ
B
V
SS
V
DDQ
DQ
B
DQ
B
FT
V
DD
NC
V
SS
DQ
B
DQ
B
V
DDQ
V
SS
DQ
B
DQ
B
DQP
B
NC
V
SS
V
DDQ
NC
NC
NC
NC
NC
NC
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
1
80
2
79
3
78
4
77
5
76
6
75
7
74
8
73
9
72
1M X 18
10
71
Top View
11
70
12
69
13
68
14
67
15
66
16
65
17
64
18
63
19
62
20
61
21
60
22
59
23
58
24
57
25
56
26
55
27
54
28
53
29
52
30
51
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
A
A
E
1
A
NC
NC
B
B
B
A
A
V
DD
V
SS
CK
GW
BW
G
ADSC
ADSP
ADV
A
A
A
NC
NC
V
DDQ
V
SS
NC
DQP
A
DQ
A
DQ
A
V
SS
V
DDQ
DQ
A
DQ
A
V
SS
NC
V
DD
ZZ
DQ
A
DQ
A
V
DDQ
V
SS
DQ
A
DQ
A
NC
NC
V
SS
V
DDQ
NC
NC
NC
Rev: 2.14 3/2005
LBO
A
A
A
A
A
1
A
0
TMS
TDI
V
SS
V
DD
TDO
TCK
A
A
A
A
A
A
A
2/36
© 1999, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8161E18(T/D)/GS816132(D)/GS816136(T/D)
GS8161E36 100-Pin TQFP Pinout (Package T)
DQP
C
DQ
C
DQ
C
V
DDQ
V
SS
DQ
C
DQ
C
DQ
C
DQ
C
V
SS
V
DDQ
DQ
C
DQ
C
FT
V
DD
NC
V
SS
DQ
D
DQ
D
V
DDQ
V
SS
DQ
D
DQ
D
DQ
D
DQ
D
V
SS
V
DDQ
DQ
D
DQ
D
DQP
D
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
1
80
2
79
3
78
4
77
5
76
6
75
7
74
8
73
9
72
512K x 36
10
71
Top View
11
70
12
69
13
68
14
67
15
66
16
65
17
64
18
63
19
62
20
61
21
60
22
59
23
58
24
57
25
56
26
55
27
54
28
53
29
52
30
51
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
A
A
E
1
A
B
D
B
C
B
B
B
A
A
V
DD
V
SS
CK
GW
BW
G
ADSC
ADSP
ADV
A
A
DQP
B
DQ
B
DQ
B
V
DDQ
V
SS
DQ
B
DQ
B
DQ
B
DQ
B
V
SS
V
DDQ
DQ
B
DQ
B
V
SS
NC
V
DD
ZZ
DQ
A
DQ
A
V
DDQ
V
SS
DQ
A
DQ
A
DQ
A
DQ
A
V
SS
V
DDQ
DQ
A
DQ
A
DQP
A
LBO
A
A
A
A
A
1
A
0
TMS
TDI
V
SS
V
DD
Rev: 2.14 3/2005
3/36
TDO
TCK
A
A
A
A
A
A
A
© 1999, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8161E18(T/D)/GS816132(D)/GS816136(T/D)
TQFP Pin Description
Symbol
A
0
, A
1
A
DQ
A
DQ
B
DQ
C
DQ
D
NC
BW
B
A
, B
B,
B
C
, B
D
CK
GW
E
1
G
ADV
ADSP, ADSC
ZZ
TMS
TDI
TDO
TCK
FT
LBO
V
DD
V
SS
V
DDQ
Type
I
I
I/O
I
I
I
I
I
I
I
I
I
I
I
O
I
I
I
I
I
I
Description
Address field LSBs and Address Counter preset Inputs
Address Input
Data Input and Output pins
No Connect
Byte Write—Writes all enabled bytes; active low
Byte Write Enable for DQ
A
, DQ
B
Data I/Os; active low
Clock Input Signal; active high
Global Write Enable—Writes all bytes; active low
Chip Enable; active low
Output Enable; active low
Burst address counter advance enable; active low
Address Strobe (Processor, Cache Controller); active low
Sleep Mode control; active high
Scan Test Mode Select
Scan Test Data In
Scan Test Data Out
Scan Test Clock
Flow Through or Pipeline mode; active low
Linear Burst Order mode; active low
Core power supply
I/O and Core Ground
Output driver power supply
Rev: 2.14 3/2005
4/36
© 1999, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8161E18(T/D)/GS816132(D)/GS816136(T/D)
165 Bump BGA—x18 Commom I/O—Top View (Package D)
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
NC
NC
NC
NC
NC
NC
NC
FT
DQB
DQB
DQB
DQB
DQPB
NC
LBO
2
A
A
NC
DQB
DQB
DQB
DQB
MCL
NC
NC
NC
NC
NC
NC
NC
3
E1
E2
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
NC
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
A
A
4
BB
NC
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
A
A
5
NC
BA
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
NC
TDI
TMS
6
E3
CK
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
A
A1
A0
7
BW
GW
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
NC
TDO
TCK
8
ADSC
G
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
A
A
9
ADV
ADSP
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
NC
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
A
A
10
A
A
NC
NC
NC
NC
NC
NC
DQA
DQA
DQA
DQA
NC
A
A
11
A18
NC
DQPA
DQA
DQA
DQA
DQA
ZZ
NC
NC
NC
NC
NC
A17
A
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
11 x 15 Bump BGA—13mm x 15 mm Body—1.0 mm Bump Pitch
Rev: 2.14 3/2005
5/36
© 1999, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
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