GS8162Z18/36D(B/D)-xxxV
119 & 165 BGA
Commercial Temp
Industrial Temp
Features
• NBT (No Bus Turn Around) functionality allows zero wait
Read-Write-Read bus utilization; fully pin-compatible with
both pipelined and flow through NtRAM™, NoBL™ and
ZBT™ SRAMs
• 1.8 V or 2.5 V core power supply
• 1.8 V or 2.5 V I/O supply
• User-configurable Pipeline and Flow Through mode
• ZQ mode pin for user-selectable high/low output drive
• IEEE 1149.1 JTAG-compatible Boundary Scan
• LBO pin for Linear or Interleave Burst mode
• Pin-compatible with 2Mb, 4Mb, 8Mb, 36Mb, 72Mb and
144Mb devices
• Byte write operation (9-bit Bytes)
• 3 chip enable signals for easy depth expansion
• ZZ Pin for automatic power-down
• JEDEC-standard 119- and 165-Bump BGA package
• RoHS-compliant packages available
18Mb Pipelined and Flow Through
Synchronous NBT SRAM
333 MHz–150 MHz
1.8 V or 2.5 V V
DD
1.8 V or 2.5 V I/O
Because it is a synchronous device, address, data inputs, and
read/write control inputs are captured on the rising edge of the
input clock. Burst order control (LBO) must be tied to a power
rail for proper operation. Asynchronous inputs include the
Sleep mode enable (ZZ) and Output Enable. Output Enable can
be used to override the synchronous control of the output
drivers and turn the RAM's output drivers off at any time.
Write cycles are internally self-timed and initiated by the rising
edge of the clock input. This feature eliminates complex off-
chip write pulse generation required by asynchronous SRAMs
and simplifies input signal timing.
The GS8162Z18/36D-xxxV may be configured by the user to
operate in Pipeline or Flow Through mode. Operating as a
pipelined synchronous device, in addition to the rising-edge-
triggered registers that capture input signals, the device
incorporates a rising edge triggered output register. For read
cycles, pipelined SRAM output data is temporarily stored by
the edge-triggered output register during the access cycle and
then released to the output drivers at the next rising edge of
clock.
The GS8162Z18/36D-xxxV is implemented with GSI's high
performance CMOS technology and is available in a JEDEC-
standard 119-bump or 165-bump BGA package.
Functional Description
The GS8162Z18/36D-xxxV is an 18Mbit Synchronous Static
SRAM. GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or
other pipelined read/double late write or flow through read/
single late write SRAMs, allow utilization of all available bus
bandwidth by eliminating the need to insert deselect cycles
when the device is switched from read to write cycles.
Parameter Synopsis
t
KQ
tCycle
Curr
(x18)
Curr
(x36)
t
KQ
tCycle
Curr
(x18)
Curr
(x36)
-333
3.0
3.0
305
360
5.0
5.0
235
265
-250
3.0
4.0
245
285
5.5
5.5
215
245
-200
3.0
5.0
205
235
6.5
6.5
205
225
-150
3.8
6.7
175
195
7.5
7.5
190
205
Unit
ns
ns
mA
mA
ns
ns
mA
mA
Pipeline
3-1-1-1
Flow
Through
2-1-1-1
Rev: 1.03b 9/2013
1/35
© 2011, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8162Z18/36D(B/D)-xxxV
GS8162Z36DGB-xxxV Pad Out—119-Bump BGA—Top View (Package B)
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
U
V
DDQ
NC
NC
DQC
DQC
V
DDQ
DQC
DQC
V
DDQ
DQD
DQD
V
DDQ
DQD
DQD
NC
NC
V
DDQ
2
A
E2
A
DQPC
DQC
DQC
DQC
DQC
V
DD
DQD
DQD
DQD
DQD
DQPD
A
NC
TMS
3
A
A
A
V
SS
V
SS
V
SS
BC
V
SS
NC
V
SS
BD
V
SS
V
SS
V
SS
LBO
A
TDI
4
A
ADV
V
DD
ZQ
E1
G
A
W
V
DD
CK
NC
CKE
A1
A0
V
DD
A
TCK
5
A
A
A
V
SS
V
SS
V
SS
BB
V
SS
NC
V
SS
BA
V
SS
V
SS
V
SS
FT
A
TDO
6
A
E3
A
DQPB
DQB
DQB
DQB
DQB
V
DD
DQA
DQA
DQA
DQA
DQPA
A
NC
NC
7
V
DDQ
NC
NC
DQB
DQB
V
DDQ
DQB
DQB
V
DDQ
DQA
DQA
V
DDQ
DQA
DQA
NC
ZZ
V
DDQ
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
U
7 x 17 Bump BGA—14 x 22 mm
2
Body—1.27 mm Bump Pitch
Rev: 1.03b 9/2013
2/35
© 2011, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8162Z18/36D(B/D)-xxxV
GS8162Z18DGB-xxxV Pad Out—119-Bump BGA—Top View (Package B)
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
U
V
DDQ
NC
NC
DQB
NC
V
DDQ
NC
DQB
V
DDQ
NC
DQB
V
DDQ
DQB
NC
NC
NC
V
DDQ
2
A
E2
A
NC
DQB
NC
DQB
NC
V
DD
DQB
NC
DQB
NC
DQPB
A
A
TMS
3
A
A
A
V
SS
V
SS
V
SS
BB
V
SS
NC
V
SS
NC
V
SS
V
SS
V
SS
LBO
A
TDI
4
A
ADV
V
DD
ZQ
E1
G
A
W
V
DD
CK
NC
CKE
A1
A0
V
DD
NC
TCK
5
A
A
A
V
SS
V
SS
V
SS
NC
V
SS
NC
V
SS
BA
V
SS
V
SS
V
SS
FT
A
TDO
6
A
E3
A
DQPA
NC
DQA
NC
DQA
V
DD
NC
DQA
NC
DQA
NC
A
A
NC
7
V
DDQ
NC
NC
NC
DQA
V
DDQ
DQA
NC
V
DDQ
DQA
NC
V
DDQ
NC
DQA
NC
ZZ
V
DDQ
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
U
7 x 17 Bump BGA—14 x 22 mm
2
Body—1.27 mm Bump Pitch
Rev: 1.03b 9/2013
3/35
© 2011, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8162Z18/36D(B/D)-xxxV
GS8162Z18/36DGB-xxxV 119-Bump BGA Pin Description
Symbol
A
0
, A
1
An
DQ
A
DQ
B
DQ
C
DQ
D
B
A
, B
B
, B
C
, B
D
CK
CKE
W
E
1
E
3
E
2
G
ADV
ZZ
FT
LBO
ZQ
TMS
TDI
TDO
TCK
V
DD
V
SS
V
DDQ
NC
Type
I
I
I/O
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
O
I
I
I
I
—
Description
Address field LSBs and Address Counter Preset Inputs
Address Inputs
Data Input and Output pins
Byte Write Enable for DQ
A
, DQ
B
, DQ
C
, DQ
D
I/Os; active low
Clock Input Signal; active high
Clock Enable; active low
Write Enable; active low
Chip Enable; active low
Chip Enable; active low
Chip Enable; active high
Output Enable; active low
Burst address counter advance enable
Sleep mode control; active high
Flow Through or Pipeline mode; active low
Linear Burst Order mode; active low
FLXDrive Output Impedance Control
Low = Low Impedance [High Drive], High = High Impedance [Low Drive])
Scan Test Mode Select
Scan Test Data In
Scan Test Data Out
Scan Test Clock
Core power supply
I/O and Core Ground
Output driver power supply
No Connect
BPR1999.05.18
Rev: 1.03b 9/2013
4/35
© 2011, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8162Z18/36D(B/D)-xxxV
165 Bump BGA—x18 Common I/O—Top View (Package D)
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
NC
NC
NC
NC
NC
NC
NC
FT
DQB
DQB
DQB
DQB
DQPB
NC
LBO
2
A
A
NC
DQB
DQB
DQB
DQB
MCH
NC
NC
NC
NC
NC
NC
NC
3
E1
E2
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
NC
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
A
A
4
BB
NC
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
A
A
5
NC
BA
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
NC
TDI
TMS
6
E3
CK
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
NC
A1
A0
7
CKE
W
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
NC
TDO
TCK
8
ADV
G
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
A
A
9
A
A
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
NC
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
A
A
10
A
A
NC
NC
NC
NC
NC
ZQ
DQA
DQA
DQA
DQA
NC
A
A
11
A
NC
DQPA
DQA
DQA
DQA
DQA
ZZ
NC
NC
NC
NC
NC
NC
A
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
11 x 15 Bump BGA—13 mm x 15 mm Body—1.0 mm Bump Pitch
Rev: 1.03b 9/2013
5/35
© 2011, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
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