GS82582DT20/38GE-550/500/450/400
165-Bump BGA
Commercial Temp
Industrial Temp
Features
• 2.5 Clock Latency
• Simultaneous Read and Write SigmaQuad™ Interface
• JEDEC-standard pinout and package
• Dual Double Data Rate interface
• Byte Write controls sampled at data-in time
• Burst of 4 Read and Write
• Dual-Range On-Die Termination (ODT) on Data (D), Byte
Write (BW), and Clock (K, K) intputs
• 1.8 V +100/–100 mV core power supply
• 1.5 V or 1.8 V HSTL Interface
• Pipelined read operation
• Fully coherent read and write pipelines
• ZQ pin for programmable output drive strength
• Data Valid Pin (QVLD) Support
• IEEE 1149.1 JTAG-compliant Boundary Scan
• RoHS-compliant 165-bump BGA package
288Mb SigmaQuad-II+
Burst of 4 SRAM
550 MHz–400 MHz
1.8 V V
DD
1.8 V or 1.5 V I/O
just one element in a family of low power, low voltage HSTL
I/O SRAMs designed to operate at the speeds needed to
implement economical high performance networking systems.
Clocking and Addressing Schemes
The GS82582DT20/38GE SigmaQuad-II+ SRAMs are
synchronous devices. They employ two input register clock
inputs, K and K. K and K are independent single-ended clock
inputs, not differential inputs to a single differential clock input
buffer.
Each internal read and write operation in a SigmaQuad-II+ B4
RAM is four times wider than the device I/O bus. An input
data bus de-multiplexer is used to accumulate incoming data
before it is simultaneously written to the memory array. An
output data multiplexer is used to capture the data produced
from a single memory array read and then route it to the
appropriate output drivers as needed. Therefore the address
field of a SigmaQuad-II+ B4 RAM is always two address pins
less than the advertised index depth (e.g., the 16M x 18 has an
4M addressable index).
SigmaQuad™ Family Overview
The GS82582DT20/38GE are built in compliance with the
SigmaQuad-II+ SRAM pinout standard for Separate I/O
synchronous SRAMs. They are 301,989,888-bit (288Mb)
SRAMs. The GS82582DT20/38GE SigmaQuad SRAMs are
Parameter Synopsis
-550
tKHKH
tKHQV
1.81 ns
0.45 ns
-500
2.0 ns
0.45 ns
-450
2.2 ns
0.45 ns
-400
2.5 ns
0.45 ns
Rev: 1.03b 11/2017
1/27
© 2012, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS82582DT20/38GE-550/500/450/400
8M x 36 SigmaQuad-II+ SRAM—Top View
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
CQ
Q27
D27
D28
Q29
Q30
D30
Doff
D31
Q32
Q33
D33
D34
Q35
TDO
2
SA
Q18
Q28
D20
D29
Q21
D22
V
REF
Q31
D32
Q24
Q34
D26
D35
TCK
3
SA
D18
D19
Q19
Q20
D21
Q22
V
DDQ
D23
Q23
D24
D25
Q25
Q26
SA
4
W
SA
V
SS
V
SS
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
SS
V
SS
SA
SA
5
BW2
BW3
SA
V
SS
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
V
SS
SA
SA
SA
6
K
K
NC
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
SA
QVLD
ODT
7
BW1
BW0
SA
V
SS
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
V
SS
SA
SA
SA
8
R
SA
V
SS
V
SS
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
SS
V
SS
SA
SA
9
SA
D17
D16
Q16
Q15
D14
Q13
V
DDQ
D12
Q12
D11
D10
Q10
Q9
SA
10
SA
Q17
Q7
D15
D6
Q14
D13
V
REF
Q4
D3
Q11
Q1
D9
D0
TMS
11
CQ
Q8
D8
D7
Q6
Q5
D5
ZQ
D4
Q3
Q2
D2
D1
Q0
TDI
11 x 15 Bump BGA—15 x 17 mm
2
Body—1 mm Bump Pitch
Note:
BW0 controls writes to D0:D8; BW1 controls writes to D9:D17; BW2 controls writes to D18:D26; BW3 controls writes to D27:D35
Rev: 1.03b 11/2017
2/27
© 2012, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS82582DT20/38GE-550/500/450/400
16M x 18 SigmaQuad-II+ SRAM—Top View
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
CQ
NC
NC
NC
NC
NC
NC
Doff
NC
NC
NC
NC
NC
NC
TDO
2
SA
Q9
NC
D11
NC
Q12
D13
V
REF
NC
NC
Q15
NC
D17
NC
TCK
3
SA
D9
D10
Q10
Q11
D12
Q13
V
DDQ
D14
Q14
D15
D16
Q16
Q17
SA
4
W
SA
V
SS
V
SS
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
SS
V
SS
SA
SA
5
BW1
NC
SA
V
SS
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
V
SS
SA
SA
SA
6
K
K
NC
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
SA
QVLD
ODT
7
SA
BW0
SA
V
SS
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
V
SS
SA
SA
SA
8
R
SA
V
SS
V
SS
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
SS
V
SS
SA
SA
9
SA
NC
NC
NC
NC
NC
NC
V
DDQ
NC
NC
NC
NC
NC
NC
SA
10
SA
NC
Q7
NC
D6
NC
NC
V
REF
Q4
D3
NC
Q1
NC
D0
TMS
11
CQ
Q8
D8
D7
Q6
Q5
D5
ZQ
D4
Q3
Q2
D2
D1
Q0
TDI
11 x 15 Bump BGA—15 x 17 mm
2
Body—1 mm Bump Pitch
Note:
BW0 controls writes to D0:D8. BW1 controls writes to D9:D17.
Rev: 1.03b 11/2017
3/27
© 2012, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS82582DT20/38GE-550/500/450/400
Pin Description Table
Symbol
SA
R
W
BW0–BW3
K
K
TMS
TDI
TCK
TDO
V
REF
ZQ
Qn
Dn
Description
Synchronous Address Inputs
Synchronous Read
Synchronous Write
Synchronous Byte Writes
Input Clock
Input Clock
Test Mode Select
Test Data Input
Test Clock Input
Test Data Output
HSTL Input Reference Voltage
Output Impedance Matching Input
Synchronous Data Outputs
Synchronous Data Inputs
Disable DLL when low
Output Echo Clock
Output Echo Clock
Power Supply
Isolated Output Buffer Supply
Power Supply: Ground
Q Valid Output
On-Die Termination
No Connect
Type
Input
Input
Input
Input
Input
Input
Input
Input
Input
Output
Input
Input
Output
Input
Input
Output
Output
Supply
Supply
Supply
Output
Input
—
Comments
—
Active Low
Active Low
Active Low
Active High
Active Low
—
—
—
—
—
—
—
—
Active Low
—
—
1.8 V Nominal
1.5 V or 1.8 V Nominal
—
—
Low = Low Impedance Range
High/Float = High Impedance Range
—
D
off
CQ
CQ
V
DD
V
DDQ
V
SS
QVLD
ODT
NC
Notes:
1. NC = Not Connected to die or any other pin
2. When ZQ pin is directly connected to V
DDQ
, output impedance is set to minimum value and it cannot be connected to ground or left
unconnected.
3. K and K cannot be set to V
REF
voltage.
Rev: 1.03b 11/2017
4/27
© 2012, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS82582DT20/38GE-550/500/450/400
Background
Separate I/O SRAMs, from a system architecture point of view, are attractive in applications where alternating reads and writes are
needed. Therefore, the SigmaQuad-II+ SRAM interface and truth table are optimized for alternating reads and writes. Separate I/O
SRAMs are unpopular in applications where multiple reads or multiple writes are needed because burst read or write transfers from
Separate I/O SRAMs can cut the RAM’s bandwidth in half.
SigmaQuad-II+ Burst of 4 SRAM DDR Read
The status of the Address Input, W, and R pins are sampled by the rising edges of K. W and R high causes chip disable. A Low on
the Read Enable pin, R, begins a read cycle. R is always ignored if the previous command loaded was a read command. Clocking
in a High on the Read Enable pin, R, begins a read port deselect cycle.
SigmaQuad-II+ Burst of 4 SRAM DDR Write
The status of the Address Input, W, and R pins are sampled by the rising edges of K. W and R High causes chip disable. A Low on
the Write Enable pin, W, and a High on the Read Enable pin, R, begins a write cycle. W is always ignored if the previous command
was a write command. Data is clocked in by the next rising edge of K, the rising edge of K after that, the next rising edge of K, and
finally by the next rising edge of K.
Special Functions
Byte Write Control
Byte Write Enable pins are sampled at the same time that Data In is sampled. A High on the Byte Write Enable pin associated with
a particular byte (e.g., BW0 controls D0–D8 inputs) will inhibit the storage of that particular byte, leaving whatever data may be
stored at the current address at that byte location undisturbed. Any or all of the Byte Write Enable pins may be driven High or Low
during the data in sample times in a write sequence.
Each write enable command and write address loaded into the RAM provides the base address for a 4-beat data transfer. The x18
version of the RAM, for example, may write 72 bits in association with each address loaded. Any 9-bit byte may be masked in any
write sequence.
Example x18 RAM Write Sequence using Byte Write Enables
Data In Sample Time
Beat 1
Beat 2
Beat 3
Beat 4
BW0
0
1
0
1
BW1
1
0
0
0
D0–D8
Data In
Don’t Care
Data In
Don’t Care
D9–D17
Don’t Care
Data In
Data In
Data In
Resulting Write Operation
Byte 1
D0–D8
Written
Beat 1
Byte 2
D9–D17
Unchanged
Byte 1
D0–D8
Unchanged
Beat 2
Byte 2
D9–D17
Written
Byte 1
D0–D8
Written
Beat 3
Byte 2
D9–D17
Written
Byte 1
D0–D8
Unchanged
Beat 4
Byte 2
D9–D17
Written
Rev: 1.03b 11/2017
5/27
© 2012, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
嵌入式系统
