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GS832236AGB-250T

Cache SRAM, 1MX36, 5.5ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANT, FPBGA-119

器件类别:存储    存储   

厂商名称:GSI Technology

厂商官网:http://www.gsitechnology.com/

器件标准:  

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
GSI Technology
零件包装代码
BGA
包装说明
BGA, BGA119,7X17,50
针数
119
Reach Compliance Code
compliant
ECCN代码
3A991.B.2.B
最长访问时间
5.5 ns
其他特性
ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH
最大时钟频率 (fCLK)
250 MHz
I/O 类型
COMMON
JESD-30 代码
R-PBGA-B119
JESD-609代码
e1
长度
22 mm
内存密度
37748736 bit
内存集成电路类型
CACHE SRAM
内存宽度
36
湿度敏感等级
3
功能数量
1
端子数量
119
字数
1048576 words
字数代码
1000000
工作模式
SYNCHRONOUS
最高工作温度
70 °C
最低工作温度
组织
1MX36
输出特性
3-STATE
封装主体材料
PLASTIC/EPOXY
封装代码
BGA
封装等效代码
BGA119,7X17,50
封装形状
RECTANGULAR
封装形式
GRID ARRAY
并行/串行
PARALLEL
峰值回流温度(摄氏度)
260
电源
2.5/3.3 V
认证状态
Not Qualified
座面最大高度
1.99 mm
最大待机电流
0.03 A
最小待机电流
2.3 V
最大压摆率
0.26 mA
最大供电电压 (Vsup)
2.7 V
最小供电电压 (Vsup)
2.3 V
标称供电电压 (Vsup)
2.5 V
表面贴装
YES
技术
CMOS
温度等级
COMMERCIAL
端子面层
Tin/Silver/Copper (Sn/Ag/Cu)
端子形式
BALL
端子节距
1.27 mm
端子位置
BOTTOM
处于峰值回流温度下的最长时间
NOT SPECIFIED
宽度
14 mm
文档预览
GS832218/36A(B/D)-400/375/333/250/200/150
119 & 165 BGA
Commercial Temp
Industrial Temp
Features
• FT pin for user-configurable flow through or pipeline operation
• Single/Dual Cycle Deselect selectable
• IEEE 1149.1 JTAG-compatible Boundary Scan
• ZQ mode pin for user-selectable high/low output drive
• 2.5 V +10%/–10% core power supply
• 3.3 V +10%/–10% core power supply
• 2.5 V or 3.3 V I/O supply
• LBO pin for Linear or Interleaved Burst mode
• Internal input resistors on mode pins allow floating mode pins
• Default to SCD x18/x36 Interleaved Pipeline mode
• Byte Write (BW) and/or Global Write (GW) operation
• Internal self-timed write cycle
• Automatic power-down for portable applications
• JEDEC-standard 119-bump and 165-bump BGA packages
• RoHS-compliant packages available
2M x 18, 1M x 36
36Mb S/DCD Sync Burst SRAMs
400 MHz–150 MHz
2.5 V or 3.3 V V
DD
2.5 V or 3.3 V I/O
either linear or interleave order with the Linear Burst Order (LBO)
input. The Burst function need not be used. New addresses can be
loaded on every cycle with no degradation of chip performance.
Flow Through/Pipeline Reads
The function of the Data Output register can be controlled by the
user via the FT mode . Holding the FT mode pin low places the
RAM in Flow Through mode, causing output data to bypass the
Data Output Register. Holding FT high places the RAM in
Pipeline mode, activating the rising-edge-triggered Data Output
Register.
SCD and DCD Pipelined Reads
The GS832218/36A is a SCD (Single Cycle Deselect) and DCD
(Dual Cycle Deselect) pipelined synchronous SRAM. DCD
SRAMs pipeline disable commands to the same degree as read
commands. SCD SRAMs pipeline deselect commands one stage
less than read commands. SCD RAMs begin turning off their
outputs immediately after the deselect command has been
captured in the input registers. DCD RAMs hold the deselect
command for one full cycle and then begin turning off their
outputs just after the second rising edge of clock. The user may
configure this SRAM for either mode of operation using the SCD
mode input.
Byte Write and Global Write
Byte write operation is performed by using Byte Write enable
(BW) input combined with one or more individual byte write
signals (Bx). In addition, Global Write (GW) is available for
writing all bytes at one time, regardless of the Byte Write control
inputs.
FLXDrive™
The ZQ pin allows selection between high drive strength (ZQ low)
for multi-drop bus applications and normal drive strength (ZQ
floating or high) point-to-point applications. See the Output Driver
Characteristics chart for details.
Functional Description
Applications
The GS832218/36A is a
37,748,736
-bit high performance
synchronous SRAM with a 2-bit burst address counter. Although
of a type originally developed for Level 2 Cache applications
supporting high performance CPUs, the device now finds
application in synchronous SRAM applications, ranging from
DSP main store to networking chip set support.
Controls
Addresses, data I/Os, chip enable (E1), address burst control
inputs (ADSP, ADSC, ADV), and write control inputs (Bx, BW,
GW) are synchronous and are controlled by a positive-edge-
triggered clock input (CK). Output enable (G) and power down
control (ZZ) are asynchronous inputs. Burst cycles can be initiated
with either ADSP or ADSC inputs. In Burst mode, subsequent
burst addresses are generated internally and are controlled by
ADV. The burst address counter may be configured to count in
Parameter Synopsis
t
KQ
tCycle
Curr
(x18)
Curr
(x32/x36)
t
KQ
tCycle
Curr
(x18)
Curr
(x32/x36)
-400
2.5
2.5
395
475
4.0
4.0
290
335
-375
2.5
2.66
390
455
4.2
4.2
275
320
-333
2.5
3.3
355
415
4.5
4.5
260
305
-250
2.5
4.0
280
335
5.5
5.5
235
270
-200
3.0
5.0
240
280
6.5
6.5
200
240
-150
3.8
6.7
205
230
7.5
7.5
190
220
Unit
ns
ns
mA
mA
ns
ns
mA
mA
Pipeline
3-1-1-1
Flow
Through
2-1-1-1
Rev: 1.03 8/2013
1/39
© 2011, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS832218/36A(B/D)-400/375/333/250/200/150
165-Bump BGA—x18 Commom I/O—Top View (Package D)
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
NC
NC
NC
NC
NC
NC
NC
FT
DQB
DQB
DQB
DQB
DQPB
NC
LBO
2
A
A
NC
DQB
DQB
DQB
DQB
MCL
NC
NC
NC
NC
SCD
NC
A
3
E1
E2
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
NC
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
A
A
4
BB
NC
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
A
A
5
NC
BA
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
NC
TDI
TMS
6
E3
CK
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
A
A1
A0
7
BW
GW
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
NC
TDO
TCK
8
ADSC
G
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
A
A
9
ADV
ADSP
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
NC
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
A
A
10
A
A
NC
NC
NC
NC
NC
ZQ
DQA
DQA
DQA
DQA
NC
A
A
11
A
NC
DQPA
DQA
DQA
DQA
DQA
ZZ
NC
NC
NC
NC
NC
A
A
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
11 x 15 Bump BGA—13 mm x 15 mm Body—1.0 mm Bump Pitch
Rev: 1.03 8/2013
2/39
© 2011, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS832218/36A(B/D)-400/375/333/250/200/150
165-Bump BGA—x36 Common I/O—Top View (Package D)
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
NC
NC
DQPC
DQC
DQC
DQC
DQC
FT
DQD
DQD
DQD
DQD
DQPD
NC
LBO
2
A
A
NC
DQC
DQC
DQC
DQC
MCL
DQD
DQD
DQD
DQD
SCD
NC
A
3
E1
E2
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
NC
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
A
A
4
BC
BD
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
A
A
5
BB
BA
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
NC
TDI
TMS
6
E3
CK
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
A
A1
A0
7
BW
GW
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
NC
TDO
TCK
8
ADSC
G
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
A
A
9
ADV
ADSP
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
NC
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
A
A
10
A
A
NC
DQB
DQB
DQB
DQB
ZQ
DQA
DQA
DQA
DQA
NC
A
A
11
NC
NC
DQPB
DQB
DQB
DQB
DQB
ZZ
DQA
DQA
DQA
DQA
DQPA
A
A
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
11 x 15 Bump BGA—13 mm x 15 mm Body—1.0 mm Bump Pitch
Rev: 1.03 8/2013
3/39
© 2011, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS832218/36A(B/D)-400/375/333/250/200/150
GS832218/36A 165-Bump BGA Pin Description
Symbol
A
0
, A
1
An
DQ
A
DQ
B
DQ
C
DQ
D
B
A
, B
B
, B
C
, B
D
CK
BW
GW
E
1
E
3
E
2
G
ADV
ADSC, ADSP
ZZ
FT
LBO
ZQ
TMS
TDI
TDO
TCK
MCL
SCD
V
DD
V
SS
V
DDQ
NC
Type
I
I
I/O
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
O
I
I
I
I
Description
Address field LSBs and Address Counter Preset Inputs
Address Inputs
Data Input and Output pins
Byte Write Enable for DQ
A
, DQ
B
, DQ
C
, DQ
D
I/Os; active low (x36 Version)
Clock Input Signal; active high
Byte Write—Writes all enabled bytes; active low
Global Write Enable—Writes all bytes; active low
Chip Enable; active low
Chip Enable; active low
Chip Enable; active high
Output Enable; active low
Burst address counter advance enable; active l0w
Address Strobe (Processor, Cache Controller); active low
Sleep mode control; active high
Flow Through or Pipeline mode; active low
Linear Burst Order mode; active low
FLXDrive Output Impedance Control (Low = Low Impedance [High Drive], High = High Impedance [Low
Drive])
Scan Test Mode Select
Scan Test Data In
Scan Test Data Out
Scan Test Clock
Must Connect Low
Single Cycle Deselect/Dual Cyle Deselect Mode Control
Core power supply
I/O and Core Ground
Output driver power supply
No Connect
Rev: 1.03 8/2013
4/39
© 2011, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS832218/36A(B/D)-400/375/333/250/200/150
119-Bump BGA—x36 Common I/O—Top View
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
U
V
DDQ
NC
NC
DQ
C
DQ
C
V
DDQ
DQ
C2
DQ
C
V
DDQ
DQ
D
DQ
D
V
DDQ
DQ
D
DQ
D
NC
NC
V
DDQ
2
A
A
A
DQP
C
DQ
C
DQ
C
DQ
C
DQ
C
V
DD
DQ
D
DQ
D
DQ
D
DQ
D
DQP
D
A
NC
TMS
3
A
A
A
V
SS
V
SS
V
SS
BC
V
SS
NC
V
SS
BD
V
SS
V
SS
V
SS
LBO
A
TDI
4
ADSP
ADSC
V
DD
ZQ
E1
G
ADV
GW
V
DD
CK
SCD
BW
A1
A0
V
DD
A
TCK
5
A
A
A
V
SS
V
SS
V
SS
BB
V
SS
NC
V
SS
BA
V
SS
V
SS
V
SS
FT
A
TDO
6
A
A
A
DQP
B
DQ
B
DQ
B
DQ
B
DQ
B
V
DD
DQ
A
DQ
A
DQ
A
DQ
A
DQP
A
A
A
NC
7
V
DDQ
NC
NC
DQ
B
DQ
B
V
DDQ
DQ
B
DQ
B
V
DDQ
DQ
A
DQ
A
V
DDQ
DQ
A
DQ
A
NC
ZZ
V
DDQ
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
U
7 x 17 Bump BGA—14 x 22 mm
2
Body—1.27 mm Bump Pitch
Rev: 1.03 8/2013
5/39
© 2011, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
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