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GS8641Z36GF-300I

ZBT SRAM, 2MX36, 5.5ns, CMOS, PBGA165, 1 MM PITCH, LEAD FREE, FBGA-165

器件类别:存储    存储   

厂商名称:GSI Technology

厂商官网:http://www.gsitechnology.com/

器件标准:  

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
GSI Technology
零件包装代码
BGA
包装说明
BGA,
针数
165
Reach Compliance Code
compliant
ECCN代码
3A991.B.2.B
最长访问时间
5.5 ns
其他特性
FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY
JESD-30 代码
R-PBGA-B165
JESD-609代码
e1
内存密度
75497472 bit
内存集成电路类型
ZBT SRAM
内存宽度
36
湿度敏感等级
3
功能数量
1
端子数量
165
字数
2097152 words
字数代码
2000000
工作模式
SYNCHRONOUS
最高工作温度
85 °C
最低工作温度
-40 °C
组织
2MX36
封装主体材料
PLASTIC/EPOXY
封装代码
BGA
封装形状
RECTANGULAR
封装形式
GRID ARRAY
并行/串行
PARALLEL
峰值回流温度(摄氏度)
260
认证状态
Not Qualified
最大供电电压 (Vsup)
2.7 V
最小供电电压 (Vsup)
2.3 V
标称供电电压 (Vsup)
2.5 V
表面贴装
YES
技术
CMOS
温度等级
INDUSTRIAL
端子面层
TIN SILVER COPPER
端子形式
BALL
端子位置
BOTTOM
处于峰值回流温度下的最长时间
NOT SPECIFIED
文档预览
Product Preview
GS8641Z18/32/36F-300/250/200/167
165-Bump BGA
Commercial Temp
Industrial Temp
Features
• User-configurable Pipeline and Flow Through mode
• NBT (No Bus Turn Around) functionality allows zero wait
read-write-read bus utilization
• Fully pin-compatible with both pipelined and flow through
NtRAM™, NoBL™ and ZBT™ SRAMs
• IEEE 1149.1 JTAG-compatible Boundary Scan
• 2.5 V or 3.3 V +10%/–10% core power supply
• LBO pin for Linear or Interleave Burst mode
• Pin-compatible with4Mb, 9Mb, 18Mb, and 36Mb devices
• Byte write operation (9-bit Bytes)
• 3 chip enable signals for easy depth expansion
• ZZ pin for automatic power-down
• JEDEC-standard 165-bump FP-BGA package
• Pb-Free 165-bump BGA package available
72Mb Pipelined and Flow Through
Synchronous NBT SRAM
300 MHz–167 MHz
2.5 V or 3.3 V V
DD
2.5 V or 3.3 V I/O
Because it is a synchronous device, address, data inputs, and
read/ write control inputs are captured on the rising edge of the
input clock. Burst order control (LBO) must be tied to a power
rail for proper operation. Asynchronous inputs include the
Sleep mode enable, ZZ and Output Enable. Output Enable can
be used to override the synchronous control of the output
drivers and turn the RAM's output drivers off at any time.
Write cycles are internally self-timed and initiated by the rising
edge of the clock input. This feature eliminates complex off-
chip write pulse generation required by asynchronous SRAMs
and simplifies input signal timing.
The GS8641Z18/32/36F may be configured by the user to
operate in Pipeline or Flow Through mode. Operating as a
pipelined synchronous device, in addition to the rising-edge-
triggered registers that capture input signals, the device
incorporates a rising-edge-triggered output register. For read
cycles, pipelined SRAM output data is temporarily stored by
the edge triggered output register during the access cycle and
then released to the output drivers at the next rising edge of
clock.
The GS8641Z18/32/36F is implemented with GSI's high
performance CMOS technology and is available in JEDEC-
standard 165-bump FP-BGA package.
Functional Description
The GS8641Z18/32/36F is a 72Mbit Synchronous Static
SRAM. GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or
other pipelined read/double late write or flow through read/
single late write SRAMs, allow utilization of all available bus
bandwidth by eliminating the need to insert deselect cycles
when the device is switched from read to write cycles.
Parameter Synopsis
t
KQ
tCycle
Curr
(x18)
Curr
(x32/x36)
t
KQ
tCycle
Curr
(x18)
Curr
(x32/x36)
-300
2.3
3.3
400
480
5.5
5.5
285
330
-250
2.5
4.0
340
410
6.5
6.5
245
280
-200
3.0
5.0
290
350
7.5
7.5
220
250
-167
3.5
6.0
260
305
8.0
8.0
210
240
Unit
ns
ns
mA
mA
ns
ns
mA
mA
Pipeline
3-1-1-1
Flow
Through
2-1-1-1
Rev: 1.01 3/2005
1/32
© 2004, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Product Preview
GS8641Z18/32/36F-300/250/200/167
165 Bump BGA—x18 Commom I/O—Top View (Package F)
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
NC
NC
NC
NC
NC
NC
NC
FT
DQB
DQB
DQB
DQB
DQB
NC
LBO
2
A
A
NC
DQB
DQB
DQB
DQB
MCH
NC
NC
NC
NC
NC
A
A
3
E1
E2
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
NC
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
A
A
4
BB
NC
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
A
A
5
NC
BA
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
NC
TDI
TMS
6
E3
CK
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
NC
A1
A0
7
CKE
W
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
NC
TDO
TCK
8
ADV
G
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
A
A
9
A
A
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
NC
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
A
A
10
A
A
NC
NC
NC
NC
NC
NC
DQA
DQA
DQA
DQA
NC
A
A
11
A
NC
DQA
DQA
DQA
DQA
DQA
ZZ
NC
NC
NC
NC
NC
NC
A
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
11 x 15 Bump BGA—TBD Body—1.0 mm Bump Pitch
Rev: 1.01 3/2005
2/32
© 2004, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Product Preview
GS8641Z18/32/36F-300/250/200/167
165 Bump BGA—x32 Common I/O—Top View (Package F)
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
NC
NC
NC
DQC
DQC
DQC
DQC
FT
DQD
DQD
DQD
DQD
NC
NC
LBO
2
A
A
NC
DQC
DQC
DQC
DQC
MCH
DQD
DQD
DQD
DQD
NC
A
A
3
E1
E2
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
NC
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
A
A
4
BC
BD
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
A
A
5
BB
BA
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
NC
TDI
TMS
6
E3
CK
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
NC
A1
A0
7
CKE
W
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
NC
TDO
TCK
8
ADV
G
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
A
A
9
A
A
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
NC
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
A
A
10
A
A
NC
DQB
DQB
DQB
DQB
NC
DQA
DQA
DQA
DQA
NC
A
A
11
NC
NC
NC
DQB
DQB
DQB
DQB
ZZ
DQA
DQA
DQA
DQA
NC
NC
A
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
11 x 15 Bump BGA—TBD Body—1.0 mm Bump Pitch
Rev: 1.01 3/2005
3/32
© 2004, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Product Preview
GS8641Z18/32/36F-300/250/200/167
165 Bump BGA—x36 Common I/O—Top View (Package F)
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
NC
NC
DQC
DQC
DQC
DQC
DQC
FT
DQD
DQD
DQD
DQD
DQD
NC
LBO
2
A
A
NC
DQC
DQC
DQC
DQC
MCH
DQD
DQD
DQD
DQD
NC
A
A
3
E1
E2
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
NC
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
A
A
4
BC
BD
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
A
A
5
BB
BA
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
NC
TDI
TMS
6
E3
CK
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
NC
A1
A0
7
CKE
W
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
NC
TDO
TCK
8
ADV
G
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
A
A
9
A
A
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
NC
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
A
A
10
A
A
NC
DQB
DQB
DQB
DQB
NC
DQA
DQA
DQA
DQA
NC
A
A
11
NC
NC
DQB
DQB
DQB
DQB
DQB
ZZ
DQA
DQA
DQA
DQA
DQA
NC
A
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
11 x 15 Bump BGA—TBD Body—1.0 mm Bump Pitch
Rev: 1.01 3/2005
4/32
© 2004, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Product Preview
GS8641Z18/32/36F-300/250/200/167
GS8641Z18/32/36F 165-Bump BGA Pin Description
Symbol
A
0
, A
1
An
DQ
A
DQ
B
DQ
C
DQ
D
B
A
, B
B
, B
C
, B
D
NC
CK
CKE
W
E
1
E
3
E
2
FT
G
ADV
ZZ
LBO
TMS
TDI
TDO
TCK
MCH
V
DD
V
SS
V
DDQ
Type
I
I
I/O
I
I
I
I
I
I
I
I
I
I
I
I
I
I
O
I
I
I
I
Description
Address field LSBs and Address Counter Preset Inputs
Address Inputs
Data Input and Output pins
Byte Write Enable for DQ
A
, DQ
B
, DQ
C
, DQ
D
I/Os; active low
No Connect
Clock Input Signal; active high
Clock Enable; active low
Write Enable; active low
Chip Enable; active low
Chip Enable; active low
Chip Enable; active high
Flow Through / Pipeline Mode Control
Output Enable; active low
Burst address counter advance enable; active high
Sleep mode control; active high
Linear Burst Order mode; active low
Scan Test Mode Select
Scan Test Data In
Scan Test Data Out
Scan Test Clock
Must Connect High
Core power supply
I/O and Core Ground
Output driver power supply
Rev: 1.01 3/2005
5/32
© 2004, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
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