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GS8662D06BD-450M

QDR SRAM, 8MX8, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165

器件类别:存储    存储   

厂商名称:GSI Technology

厂商官网:http://www.gsitechnology.com/

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器件:GS8662D06BD-450M

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器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
GSI Technology
包装说明
LBGA,
Reach Compliance Code
compliant
ECCN代码
3A991.B.2.B
Factory Lead Time
8 weeks
最长访问时间
0.45 ns
JESD-30 代码
R-PBGA-B165
长度
15 mm
内存密度
67108864 bit
内存集成电路类型
QDR SRAM
内存宽度
8
功能数量
1
端子数量
165
字数
8388608 words
字数代码
8000000
工作模式
SYNCHRONOUS
最高工作温度
125 °C
最低工作温度
-55 °C
组织
8MX8
封装主体材料
PLASTIC/EPOXY
封装代码
LBGA
封装形状
RECTANGULAR
封装形式
GRID ARRAY, LOW PROFILE
并行/串行
PARALLEL
峰值回流温度(摄氏度)
NOT SPECIFIED
座面最大高度
1.4 mm
最大供电电压 (Vsup)
1.9 V
最小供电电压 (Vsup)
1.7 V
标称供电电压 (Vsup)
1.8 V
表面贴装
YES
技术
CMOS
温度等级
MILITARY
端子形式
BALL
端子节距
1 mm
端子位置
BOTTOM
处于峰值回流温度下的最长时间
NOT SPECIFIED
宽度
13 mm
Base Number Matches
1
文档预览
GS8662D06/11/20/38BD-450M
165-Bump BGA
Military Temp
Features
• Military Temperature Range
• 2.5 Clock Latency
• Simultaneous Read and Write SigmaQuad™ Interface
• JEDEC-standard pinout and package
• Dual Double Data Rate interface
• Byte Write controls sampled at data-in time
• Burst of 4 Read and Write
• On-Die Termination (ODT) on Data (D), Byte Write (BW),
and Clock (K, K) intputs
• 1.8 V +100/–100 mV core power supply
• 1.5 V or 1.8 V HSTL Interface
• Pipelined read operation
• Fully coherent read and write pipelines
• ZQ pin for programmable output drive strength
• Data Valid Pin (QVLD) Support
• IEEE 1149.1 JTAG-compliant Boundary Scan
• 165-bump, 13 mm x 15 mm, 1 mm bump pitch BGA package
• RoHS-compliant 165-bump BGA package available
72Mb SigmaQuad-II+
TM
Burst of 4 SRAM
450 MHz
1.8 V V
DD
1.8 V or 1.5 V I/O
SRAMs. The GS8662D06/11/20/38BD SigmaQuad SRAMs
are just one element in a family of low power, low voltage
HSTL I/O SRAMs designed to operate at the speeds needed to
implement economical high performance networking systems.
Clocking and Addressing Schemes
The GS8662D06/11/20/38BD SigmaQuad-II+ SRAMs are
synchronous devices. They employ two input register clock
inputs, K and K. K and K are independent single-ended clock
inputs, not differential inputs to a single differential clock input
buffer.
Each internal read and write operation in a SigmaQuad-II+ B4
RAM is four times wider than the device I/O bus. An input
data bus de-multiplexer is used to accumulate incoming data
before it is simultaneously written to the memory array. An
output data multiplexer is used to capture the data produced
from a single memory array read and then route it to the
appropriate output drivers as needed. Therefore the address
field of a SigmaQuad-II+ B4 RAM is always two address pins
less than the advertised index depth (e.g., the 8M x 8 has a 2M
addressable index).
SigmaQuad-II™ Family Overview
The GS8662D06/11/20/38BD are built in compliance with
the SigmaQuad-II+ SRAM pinout standard for Separate I/O
synchronous SRAMs. They are 75,497,472-bit (72Mb)
Parameter Synopsis
-450M
tKHKH
tKHQV
2.2 ns
0.37 ns
Rev: 1.00 10/2012
1/29
© 2012, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8662D06/11/20/38BD-450M
2M x 36 SigmaQuad-II+ SRAM—Top View
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
CQ
Q27
D27
D28
Q29
Q30
D30
Doff
D31
Q32
Q33
D33
D34
Q35
TDO
2
NC/SA
(288Mb)
Q18
Q28
D20
D29
Q21
D22
V
REF
Q31
D32
Q24
Q34
D26
D35
TCK
3
SA
D18
D19
Q19
Q20
D21
Q22
V
DDQ
D23
Q23
D24
D25
Q25
Q26
SA
4
W
SA
V
SS
V
SS
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
SS
V
SS
SA
SA
5
BW2
BW3
SA
V
SS
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
V
SS
SA
SA
SA
6
K
K
NC
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
SA
QVLD
ODT
7
BW1
BW0
SA
V
SS
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
V
SS
SA
SA
SA
8
R
SA
V
SS
V
SS
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
SS
V
SS
SA
SA
9
SA
D17
D16
Q16
Q15
D14
Q13
V
DDQ
D12
Q12
D11
D10
Q10
Q9
SA
10
NC/SA
(144Mb)
Q17
Q7
D15
D6
Q14
D13
V
REF
Q4
D3
Q11
Q1
D9
D0
TMS
11
CQ
Q8
D8
D7
Q6
Q5
D5
ZQ
D4
Q3
Q2
D2
D1
Q0
TDI
11 x 15 Bump BGA—13 x 15 mm Body—1 mm Bump Pitch
Notes:
1. BW0 controls writes to D0:D8; BW1 controls writes to D9:D17; BW2 controls writes to D18:D26; BW3 controls writes to D27:D35
2. Pins A2 and A10 are the expansion addresses.
Rev: 1.00 10/2012
2/29
© 2012, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8662D06/11/20/38BD-450M
4M x 18 SigmaQuad-II+ SRAM—Top View
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
CQ
NC
NC
NC
NC
NC
NC
Doff
NC
NC
NC
NC
NC
NC
TDO
2
NC/SA
(144Mb)
Q9
NC
D11
NC
Q12
D13
V
REF
NC
NC
Q15
NC
D17
NC
TCK
3
SA
D9
D10
Q10
Q11
D12
Q13
V
DDQ
D14
Q14
D15
D16
Q16
Q17
SA
4
W
SA
V
SS
V
SS
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
SS
V
SS
SA
SA
5
BW1
NC
SA
V
SS
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
V
SS
SA
SA
SA
6
K
K
NC
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
SA
QVLD
ODT
7
NC/SA
(288Mb)
BW0
SA
V
SS
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
V
SS
SA
SA
SA
8
R
SA
V
SS
V
SS
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
SS
V
SS
SA
SA
9
SA
NC
NC
NC
NC
NC
NC
V
DDQ
NC
NC
NC
NC
NC
NC
SA
10
SA
NC
Q7
NC
D6
NC
NC
V
REF
Q4
D3
NC
Q1
NC
D0
TMS
11
CQ
Q8
D8
D7
Q6
Q5
D5
ZQ
D4
Q3
Q2
D2
D1
Q0
TDI
11 x 15 Bump BGA—13 x 15 mm Body—1 mm Bump Pitch
Notes:
1. BW0 controls writes to D0:D8. BW1 controls writes to D9:D17.
2. Pins A2 and A7 are the expansion addresses.
Rev: 1.00 10/2012
3/29
© 2012, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8662D06/11/20/38BD-450M
8M x 9 SigmaQuad-II SRAM—Top View
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
CQ
NC
NC
NC
NC
NC
NC
Doff
NC
NC
NC
NC
NC
NC
TDO
2
SA
NC
NC
D5
NC
NC
D6
V
REF
NC
NC
Q7
NC
D8
NC
TCK
3
SA
NC
NC
NC
Q5
NC
Q6
V
DDQ
NC
NC
D7
NC
NC
Q8
SA
4
W
SA
V
SS
V
SS
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
SS
V
SS
SA
SA
5
NC
NC/SA
(288Mb)
SA
V
SS
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
V
SS
SA
SA
SA
6
K
K
NC
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
SA
QVLD
ODT
7
NC/SA
(144Mb)
BW0
SA
V
SS
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
V
SS
SA
SA
SA
8
R
SA
V
SS
V
SS
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
SS
V
SS
SA
SA
9
SA
NC
NC
NC
NC
NC
NC
V
DDQ
NC
NC
NC
NC
NC
NC
SA
10
SA
NC
NC
NC
D3
NC
NC
V
REF
Q2
NC
NC
NC
NC
D0
TMS
11
CQ
Q4
D4
NC
Q3
NC
NC
ZQ
D2
NC
Q1
D1
NC
Q0
TDI
11 x 15 Bump BGA—13 x 15 mm Body—1 mm Bump Pitch
Notes:
1. BW0 controls writes to D0:D8.
2. Pins A7 and B5 are the expansion addresses.
Rev: 1.00 10/2012
4/29
© 2012, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8662D06/11/20/38BD-450M
8M x 8 SigmaQuad-II SRAM—Top View
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
CQ
NC
NC
NC
NC
NC
NC
Doff
NC
NC
NC
NC
NC
NC
TDO
2
SA
NC
NC
D4
NC
NC
D5
V
REF
NC
NC
Q6
NC
D7
NC
TCK
3
SA
NC
NC
NC
Q4
NC
Q5
V
DDQ
NC
NC
D6
NC
NC
Q7
SA
4
W
SA
V
SS
V
SS
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
SS
V
SS
SA
SA
5
NW1
NC/SA
(288Mb)
SA
V
SS
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
V
SS
SA
SA
SA
6
K
K
NC
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
SA
QVLD
ODT
7
NC/SA
(144Mb)
NW0
SA
V
SS
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
V
SS
SA
SA
SA
8
R
SA
V
SS
V
SS
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
SS
V
SS
SA
SA
9
SA
NC
NC
NC
NC
NC
NC
V
DDQ
NC
NC
NC
NC
NC
NC
SA
10
SA
NC
NC
NC
D2
NC
NC
V
REF
Q1
NC
NC
NC
NC
NC
TMS
11
CQ
Q3
D3
NC
Q2
NC
NC
ZQ
D1
NC
Q0
D0
NC
NC
TDI
11 x 15 Bump BGA—13 x 15 mm Body—1 mm Bump Pitch
Notes:
1. NW0 controls writes to D0:D3. NW1 controls writes to D4:D7.
2. Pins A7 and B5 are the expansion addresses.
Rev: 1.00 10/2012
5/29
© 2012, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
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参数对比
与GS8662D06BD-450M相近的元器件有:GS8662D06BD-450MT、GS8662D20BD-450M、GS8662D20BD-450MT、GS8662D38BD-450M、GS8662D38BD-450MT。描述及对比如下:
型号 GS8662D06BD-450M GS8662D06BD-450MT GS8662D20BD-450M GS8662D20BD-450MT GS8662D38BD-450M GS8662D38BD-450MT
描述 QDR SRAM, 8MX8, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 QDR SRAM, 8MX8, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 QDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 QDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 QDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 QDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165
包装说明 LBGA, LBGA, LBGA, LBGA, LBGA, LBGA,
Reach Compliance Code compliant compliant compliant compliant compliant compliant
ECCN代码 3A991.B.2.B 3A991.B.2.B 3A991.B.2.B 3A991.B.2.B 3A991.B.2.B 3A991.B.2.B
最长访问时间 0.45 ns 0.45 ns 0.45 ns 0.45 ns 0.45 ns 0.45 ns
JESD-30 代码 R-PBGA-B165 R-PBGA-B165 R-PBGA-B165 R-PBGA-B165 R-PBGA-B165 R-PBGA-B165
长度 15 mm 15 mm 15 mm 15 mm 15 mm 15 mm
内存密度 67108864 bit 67108864 bit 75497472 bit 75497472 bit 75497472 bit 75497472 bit
内存集成电路类型 QDR SRAM QDR SRAM QDR SRAM QDR SRAM QDR SRAM QDR SRAM
内存宽度 8 8 18 18 36 36
功能数量 1 1 1 1 1 1
端子数量 165 165 165 165 165 165
字数 8388608 words 8388608 words 4194304 words 4194304 words 2097152 words 2097152 words
字数代码 8000000 8000000 4000000 4000000 2000000 2000000
工作模式 SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
最高工作温度 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C
最低工作温度 -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C
组织 8MX8 8MX8 4MX18 4MX18 2MX36 2MX36
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 LBGA LBGA LBGA LBGA LBGA LBGA
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
座面最大高度 1.4 mm 1.4 mm 1.4 mm 1.4 mm 1.4 mm 1.4 mm
最大供电电压 (Vsup) 1.9 V 1.9 V 1.9 V 1.9 V 1.9 V 1.9 V
最小供电电压 (Vsup) 1.7 V 1.7 V 1.7 V 1.7 V 1.7 V 1.7 V
标称供电电压 (Vsup) 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V
表面贴装 YES YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 MILITARY MILITARY MILITARY MILITARY MILITARY MILITARY
端子形式 BALL BALL BALL BALL BALL BALL
端子节距 1 mm 1 mm 1 mm 1 mm 1 mm 1 mm
端子位置 BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
宽度 13 mm 13 mm 13 mm 13 mm 13 mm 13 mm
厂商名称 GSI Technology GSI Technology - - GSI Technology GSI Technology
Base Number Matches 1 1 1 1 - -
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