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GS8662Q36BGD-200I

SRAM 1.8 or 1.5V 2M x 36 72M

器件类别:存储    存储   

厂商名称:GSI Technology

厂商官网:http://www.gsitechnology.com/

器件标准:

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
GSI Technology
零件包装代码
BGA
包装说明
LBGA, BGA165,11X15,40
针数
165
Reach Compliance Code
compliant
ECCN代码
3A991.B.2.B
Factory Lead Time
8 weeks
最长访问时间
0.45 ns
其他特性
PIPELINED ARCHITECTURE
最大时钟频率 (fCLK)
200 MHz
I/O 类型
SEPARATE
JESD-30 代码
R-PBGA-B165
JESD-609代码
e1
长度
15 mm
内存密度
75497472 bit
内存集成电路类型
QDR SRAM
内存宽度
36
湿度敏感等级
3
功能数量
1
端子数量
165
字数
2097152 words
字数代码
2000000
工作模式
SYNCHRONOUS
最高工作温度
85 °C
最低工作温度
-40 °C
组织
2MX36
输出特性
3-STATE
封装主体材料
PLASTIC/EPOXY
封装代码
LBGA
封装等效代码
BGA165,11X15,40
封装形状
RECTANGULAR
封装形式
GRID ARRAY, LOW PROFILE
并行/串行
PARALLEL
峰值回流温度(摄氏度)
260
电源
1.5/1.8,1.8 V
认证状态
Not Qualified
座面最大高度
1.4 mm
最小待机电流
1.7 V
最大压摆率
0.75 mA
最大供电电压 (Vsup)
1.9 V
最小供电电压 (Vsup)
1.7 V
标称供电电压 (Vsup)
1.8 V
表面贴装
YES
技术
CMOS
温度等级
INDUSTRIAL
端子面层
Tin/Silver/Copper (Sn/Ag/Cu)
端子形式
BALL
端子节距
1 mm
端子位置
BOTTOM
处于峰值回流温度下的最长时间
NOT SPECIFIED
宽度
13 mm
文档预览
GS8662Q08/09/18/36BD-357/333/300/250/200
165-Bump BGA
Commercial Temp
Industrial Temp
Features
• Simultaneous Read and Write SigmaQuad™ Interface
• JEDEC-standard pinout and package
• Dual Double Data Rate interface
• Byte Write controls sampled at data-in time
• Burst of 2 Read and Write
• 1.8 V +100/–100 mV core power supply
• 1.5 V or 1.8 V HSTL Interface
• Pipelined read operation
• Fully coherent read and write pipelines
• ZQ pin for programmable output drive strength
• IEEE 1149.1 JTAG-compliant Boundary Scan
• Pin-compatible with present 144 Mb devices
• 165-bump, 13 mm x 15 mm, 1 mm bump pitch BGA package
• RoHS-compliant 165-bump BGA package available
72Mb SigmaQuad-II
TM
Burst of 2 SRAM
Clocking and Addressing Schemes
357 MHz–200 MHz
1.8 V V
DD
1.8 V and 1.5 V I/O
The GS8662Q08/09/18/36BD SigmaQuad-II SRAMs are
synchronous devices. They employ two input register clock
inputs, K and K. K and K are independent single-ended clock
inputs, not differential inputs to a single differential clock input
buffer. The device also allows the user to manipulate the
output register clock inputs quasi independently with the C and
C clock inputs. C and C are also independent single-ended
clock inputs, not differential inputs. If the C clocks are tied
high, the K clocks are routed internally to fire the output
registers instead.
Each internal read and write operation in a SigmaQuad-II B2
RAM is two times wider than the device I/O bus. An input data
bus de-multiplexer is used to accumulate incoming data before
it is simultaneously written to the memory array. An output
data multiplexer is used to capture the data produced from a
single memory array read and then route it to the appropriate
output drivers as needed. Therefore the address field of a
SigmaQuad-II B2 RAM is always one address pin less than the
advertised index depth (e.g., the 8M x 8 has an 4M addressable
index).
SigmaQuad™ Family Overview
The GS8662Q08/09/18/36BD are built in compliance with
the SigmaQuad-II SRAM pinout standard for Separate I/O
synchronous SRAMs. They are 75,497,472-bit (72Mb)
SRAMs. The GS8662Q08/09/18/36BD SigmaQuad SRAMs
are just one element in a family of low power, low voltage
HSTL I/O SRAMs designed to operate at the speeds needed to
implement economical high performance networking systems.
Parameter Synopsis
-357
tKHKH
tKHQV
2.8 ns
0.45 ns
-333
3.0 ns
0.45 ns
-300
3.3 ns
0.45 ns
-250
4.0 ns
0.45 ns
-200
5.0 ns
0.45 ns
Rev: 1.02d 8/2017
1/34
© 2011, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8662Q08/09/18/36BD-357/333/300/250/200
2M x 36 SigmaQuad-II SRAM—Top View
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
CQ
Q27
D27
D28
Q29
Q30
D30
Doff
D31
Q32
Q33
D33
D34
Q35
TDO
2
NA/SA
(288Mb)
Q18
Q28
D20
D29
Q21
D22
V
REF
Q31
D32
Q24
Q34
D26
D35
TCK
3
SA
D18
D19
Q19
Q20
D21
Q22
V
DDQ
D23
Q23
D24
D25
Q25
Q26
SA
4
W
SA
V
SS
V
SS
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
SS
V
SS
SA
SA
5
BW2
BW3
SA
V
SS
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
V
SS
SA
SA
SA
6
K
K
SA
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
SA
C
C
7
BW1
BW0
SA
V
SS
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
V
SS
SA
SA
SA
8
R
SA
V
SS
V
SS
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
SS
V
SS
SA
SA
9
SA
D17
D16
Q16
Q15
D14
Q13
V
DDQ
D12
Q12
D11
D10
Q10
Q9
SA
10
NC/SA
(144Mb)
Q17
Q7
D15
D6
Q14
D13
V
REF
Q4
D3
Q11
Q1
D9
D0
TMS
11
CQ
Q8
D8
D7
Q6
Q5
D5
ZQ
D4
Q3
Q2
D2
D1
Q0
TDI
11 x 15 Bump BGA—13 x 15 mm Body—1 mm Bump Pitch
Notes:
1. BW0 controls writes to D0:D8; BW1 controls writes to D9:D17; BW2 controls writes to D18:D26; BW3 controls writes to D27:D35.
2. A2 and A10 are the expansion addresses.
Rev: 1.02d 8/2017
2/34
© 2011, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8662Q08/09/18/36BD-357/333/300/250/200
4M x 18 SigmaQuad-II SRAM—Top View
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
CQ
NC
NC
NC
NC
NC
NC
Doff
NC
NC
NC
NC
NC
NC
TDO
2
NC/SA
(144Mb)
Q9
NC
D11
NC
Q12
D13
V
REF
NC
NC
Q15
NC
D17
NC
TCK
3
SA
D9
D10
Q10
Q11
D12
Q13
V
DDQ
D14
Q14
D15
D16
Q16
Q17
SA
4
W
SA
V
SS
V
SS
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
SS
V
SS
SA
SA
5
BW1
NC
SA
V
SS
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
V
SS
SA
SA
SA
6
K
K
SA
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
SA
C
C
7
NC/SA
(288Mb)
BW0
SA
V
SS
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
V
SS
SA
SA
SA
8
R
SA
V
SS
V
SS
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
SS
V
SS
SA
SA
9
SA
NC
NC
NC
NC
NC
NC
V
DDQ
NC
NC
NC
NC
NC
NC
SA
10
SA
NC
Q7
NC
D6
NC
NC
V
REF
Q4
D3
NC
Q1
NC
D0
TMS
11
CQ
Q8
D8
D7
Q6
Q5
D5
ZQ
D4
Q3
Q2
D2
D1
Q0
TDI
11 x 15 Bump BGA—13 x 15 mm Body—1 mm Bump Pitch
Notes:
1. BW0 controls writes to D0:D8. BW1 controls writes to D9:D17.
2. A2 and A7 are the expansion addresses.
Rev: 1.02d 8/2017
3/34
© 2011, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8662Q08/09/18/36BD-357/333/300/250/200
8M x 8 SigmaQuad-II SRAM—Top View
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
CQ
NC
NC
NC
NC
NC
NC
Doff
NC
NC
NC
NC
NC
NC
TDO
2
SA
NC
NC
D4
NC
NC
D5
V
REF
NC
NC
Q6
NC
D7
NC
TCK
3
SA
NC
NC
NC
Q4
NC
Q5
V
DDQ
NC
NC
D6
NC
NC
Q7
SA
4
W
SA
V
SS
V
SS
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
SS
V
SS
SA
SA
5
NW1
NC/SA
(288Mb)
SA
V
SS
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
V
SS
SA
SA
SA
6
K
K
SA
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
SA
C
C
7
NC/SA
(144Mb)
NW0
SA
V
SS
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
V
SS
SA
SA
SA
8
R
SA
V
SS
V
SS
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
SS
V
SS
SA
SA
9
SA
NC
NC
NC
NC
NC
NC
V
DDQ
NC
NC
NC
NC
NC
NC
SA
10
SA
NC
NC
NC
D2
NC
NC
V
REF
Q1
NC
NC
NC
NC
NC
TMS
11
CQ
Q3
D3
NC
Q2
NC
NC
ZQ
D1
NC
Q0
D0
NC
NC
TDI
11 x 15 Bump BGA—13 x 15 mm Body—1 mm Bump Pitch
Notes:
1. NW0 controls writes to D0:D3. NW1 controls writes to D4:D7.
2. A7 and B5 are the expansion addresses.
Rev: 1.02d 8/2017
4/34
© 2011, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8662Q08/09/18/36BD-357/333/300/250/200
8M x 9 SigmaQuad-II SRAM — Top View
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
CQ
NC
NC
NC
NC
NC
NC
Doff
NC
NC
NC
NC
NC
NC
TDO
2
SA
NC
NC
D5
NC
NC
D6
V
REF
NC
NC
Q7
NC
D8
NC
TCK
3
SA
NC
NC
NC
Q5
NC
Q6
V
DDQ
NC
NC
D7
NC
NC
Q8
SA
4
W
SA
V
SS
V
SS
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
SS
V
SS
SA
SA
5
NC
NC/SA
(288Mb)
SA
V
SS
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
V
SS
SA
SA
SA
6
K
K
SA
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
SA
C
C
7
NC/SA
(144Mb)
BW0
SA
V
SS
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
V
SS
SA
SA
SA
8
R
SA
V
SS
V
SS
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
SS
V
SS
SA
SA
9
SA
NC
NC
NC
NC
NC
NC
V
DDQ
NC
NC
NC
NC
NC
NC
SA
10
SA
NC
NC
NC
D3
NC
NC
V
REF
Q2
NC
NC
NC
NC
D0
TMS
11
CQ
Q4
D4
NC
Q3
NC
NC
ZQ
D2
NC
Q1
D1
NC
Q0
TDI
11 x 15 Bump BGA—13 x 15 mm Body—1 mm Bump Pitch
Notes:
1. BW0 controls writes to DQ:D8.
2. A7 and B5 are the expansion addresses.
Rev: 1.02d 8/2017
5/34
© 2011, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
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参数对比
与GS8662Q36BGD-200I相近的元器件有:GS8662Q36BGD-250I。描述及对比如下:
型号 GS8662Q36BGD-200I GS8662Q36BGD-250I
描述 SRAM 1.8 or 1.5V 2M x 36 72M SRAM 1.8 or 1.5V 2M x 36 72M
是否无铅 不含铅 不含铅
是否Rohs认证 符合 符合
厂商名称 GSI Technology GSI Technology
零件包装代码 BGA BGA
包装说明 LBGA, BGA165,11X15,40 LBGA, BGA165,11X15,40
针数 165 165
Reach Compliance Code compliant compliant
ECCN代码 3A991.B.2.B 3A991.B.2.B
Factory Lead Time 8 weeks 8 weeks
最长访问时间 0.45 ns 0.45 ns
其他特性 PIPELINED ARCHITECTURE PIPELINED ARCHITECTURE
最大时钟频率 (fCLK) 200 MHz 250 MHz
I/O 类型 SEPARATE SEPARATE
JESD-30 代码 R-PBGA-B165 R-PBGA-B165
JESD-609代码 e1 e1
长度 15 mm 15 mm
内存密度 75497472 bit 75497472 bit
内存集成电路类型 QDR SRAM QDR SRAM
内存宽度 36 36
湿度敏感等级 3 3
功能数量 1 1
端子数量 165 165
字数 2097152 words 2097152 words
字数代码 2000000 2000000
工作模式 SYNCHRONOUS SYNCHRONOUS
最高工作温度 85 °C 85 °C
最低工作温度 -40 °C -40 °C
组织 2MX36 2MX36
输出特性 3-STATE 3-STATE
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 LBGA LBGA
封装等效代码 BGA165,11X15,40 BGA165,11X15,40
封装形状 RECTANGULAR RECTANGULAR
封装形式 GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE
并行/串行 PARALLEL PARALLEL
峰值回流温度(摄氏度) 260 260
电源 1.5/1.8,1.8 V 1.5/1.8,1.8 V
认证状态 Not Qualified Not Qualified
座面最大高度 1.4 mm 1.4 mm
最小待机电流 1.7 V 1.7 V
最大压摆率 0.75 mA 0.905 mA
最大供电电压 (Vsup) 1.9 V 1.9 V
最小供电电压 (Vsup) 1.7 V 1.7 V
标称供电电压 (Vsup) 1.8 V 1.8 V
表面贴装 YES YES
技术 CMOS CMOS
温度等级 INDUSTRIAL INDUSTRIAL
端子面层 Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu)
端子形式 BALL BALL
端子节距 1 mm 1 mm
端子位置 BOTTOM BOTTOM
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED
宽度 13 mm 13 mm
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