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GS88136CGT-300IT

Cache SRAM, 256KX36, CMOS, ROHS COMPLIANT, TQFP-100

器件类别:存储    存储   

厂商名称:GSI Technology

厂商官网:http://www.gsitechnology.com/

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器件参数
参数名称
属性值
厂商名称
GSI Technology
零件包装代码
QFP
包装说明
LQFP,
针数
100
Reach Compliance Code
compliant
ECCN代码
3A991.B.2.B
其他特性
ALSO OPERATES WITH 2.3V TO 2.7V SUPPLY, FLOW THROUGH OR PIPELINED ARCHITECTURE
JESD-30 代码
R-XQFP-G100
长度
20 mm
内存密度
9437184 bit
内存集成电路类型
CACHE SRAM
内存宽度
36
功能数量
1
端子数量
100
字数
262144 words
字数代码
256000
工作模式
SYNCHRONOUS
最高工作温度
85 °C
最低工作温度
-40 °C
组织
256KX36
封装主体材料
UNSPECIFIED
封装代码
LQFP
封装形状
RECTANGULAR
封装形式
FLATPACK, LOW PROFILE
并行/串行
SERIAL
认证状态
Not Qualified
座面最大高度
1.6 mm
最大供电电压 (Vsup)
3.6 V
最小供电电压 (Vsup)
3 V
标称供电电压 (Vsup)
3.3 V
表面贴装
YES
技术
CMOS
温度等级
INDUSTRIAL
端子形式
GULL WING
端子节距
0.65 mm
端子位置
QUAD
宽度
14 mm
文档预览
GS88118/32/36C(T/D)-xxxI
100-pin TQFP & 165-bump BGA
Industrial Temp
Features
• IEEE 1149.1 JTAG-compatible Boundary Scan
• 2.5 V or 3.3 V +10%/–10% core power supply
• 2.5 V or 3.3 V I/O supply
• LBO pin for Linear or Interleaved Burst mode
• Internal input resistors on mode pins allow floating mode pins
• Byte Write (BW) and/or Global Write (GW) operation
• Internal self-timed write cycle
• Automatic power-down for portable applications
• JEDEC-standard 100-lead TQFP and 165-bump BGA
packages
• RoHS-compliant 100-lead TQFP and 165-bump BGA
packages available
512K x 18, 256K x 32, 256K x 36
9Mb Sync Burst SRAMs
333 MHz–150 MHz
2.5 V or 3.3 V V
DD
2.5 V or 3.3 V I/O
Flow Through/Pipeline Reads
The function of the Data Output register can be controlled by
the user via the FT mode pin (Pin 14). Holding the FT mode
pin low places the RAM in Flow Through mode, causing
output data to bypass the Data Output Register. Holding FT
high places the RAM in Pipeline mode, activating the rising-
edge-triggered Data Output Register.
SCD Pipelined Reads
The GS88118C(T/D)/GS88132C(88132CT/D)/GS88136C(T/
D) is a SCD (Single Cycle Deselect) pipelined synchronous
SRAM. DCD (Dual Cycle Deselect) versions are also
available. SCD SRAMs pipeline deselect commands one stage
less than read commands. SCD RAMs begin turning off their
outputs immediately after the deselect command has been
captured in the input registers.
Byte Write and Global Write
Byte write operation is performed by using Byte Write enable
(BW) input combined with one or more individual byte write
signals (Bx). In addition, Global Write (GW) is available for
writing all bytes at one time, regardless of the Byte Write
control inputs.
Sleep Mode
Low power (Sleep mode) is attained through the assertion
(High) of the ZZ signal, or by stopping the clock (CK).
Memory data is retained during Sleep mode.
Core and Interface Voltages
The GS88118C(T/D)/GS88132C(T/D)/GS88136C(T/D)
operates on a 2.5 V or 3.3 V power supply. All input are 3.3 V
and 2.5 V compatible. Separate output power (V
DDQ
) pins are
used to decouple output noise from the internal circuits and are
3.3 V and 2.5 V compatible.
Functional Description
Applications
The GS88118C(T/D)/GS88132C(T/D)/GS88136C(T/D) is a
9,437,184-bit high performance synchronous SRAM with a 2-
bit burst address counter. Although of a type originally
developed for Level 2 Cache applications supporting high
performance CPUs, the device now finds application in
synchronous SRAM applications, ranging from DSP main
store to networking chip set support.
Controls
Addresses, data I/Os, chip enable (E1, E2), address burst
control inputs (ADSP, ADSC, ADV) and write control inputs
(Bx, BW, GW) are synchronous and are controlled by a
positive-edge-triggered clock input (CK). Output enable (G)
and power down control (ZZ) are asynchronous inputs. Burst
cycles can be initiated with either ADSP or ADSC inputs. In
Burst mode, subsequent burst addresses are generated
internally and are controlled by ADV. The burst address
counter may be configured to count in either linear or
interleave order with the Linear Burst Order (LBO) input. The
Burst function need not be used. New addresses can be loaded
on every cycle with no degradation of chip performance.
Parameter Synopsis
-333I
Pipeline
3-1-1-1
t
KQ
tCycle
Curr (x18)
Curr (x32/x36)
t
KQ
tCycle
Curr (x18)
Curr (x32/x36)
2.5
3.0
260
300
4.5
4.5
200
225
-300I
2.5
3.3
245
280
5.0
5.0
185
210
-250I
2.5
4.0
215
245
5.5
5.5
180
200
-200I
3.0
5.0
190
215
6.5
6.5
160
180
-150I
3.8
6.7
160
180
7.5
7.5
148
165
Unit
ns
ns
mA
mA
ns
ns
mA
mA
Flow Through
2-1-1-1
Rev: 1.04a 10/2012
1/35
© 2011, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS88118/32/36C(T/D)-xxxI
GS88118C 100-Pin TQFP Pinout (Package T)
NC
NC
NC
V
DDQ
V
SS
NC
NC
DQ
B
DQ
B
V
SS
V
DDQ
DQ
B
DQ
B
FT
V
DD
NC
V
SS
DQ
B
DQ
B
V
DDQ
V
SS
DQ
B
DQ
B
DQP
B
NC
V
SS
V
DDQ
NC
NC
NC
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
1
80
2
79
3
78
4
77
5
76
6
75
7
74
8
73
9
72
512K x 18
10
71
Top View
11
70
12
69
13
68
14
67
15
66
16
65
17
64
18
63
19
62
20
61
21
60
22
59
23
58
24
57
25
56
26
55
27
54
28
53
29
52
30
51
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
A
A
E
1
E
2
NC
NC
B
B
B
A
A
V
DD
V
SS
CK
GW
BW
G
ADSC
ADSP
ADV
A
A
A
NC
NC
V
DDQ
V
SS
NC
DQP
A
DQ
A
DQ
A
V
SS
V
DDQ
DQ
A
DQ
A
V
SS
NC
V
DD
ZZ
DQ
A
DQ
A
V
DDQ
V
SS
DQ
A
DQ
A
NC
NC
V
SS
V
DDQ
NC
NC
NC
Note:
Pins marked with NC can be tied to either V
DD
or V
SS
. These pins can also be left floating.
Rev: 1.04a 10/2012
LBO
A
A
A
A
A
1
A
0
TMS
TDI
V
SS
V
DD
TDO
TCK
A
A
A
A
A
A
A
2/35
© 2011, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS88118/32/36C(T/D)-xxxI
GS88132C 100-Pin TQFP Pinout (Package T)
NC
DQ
C
DQ
C
V
DDQ
V
SS
DQ
C
DQ
C
DQ
C
DQ
C
V
SS
V
DDQ
DQ
C
DQ
C
FT
V
DD
NC
V
SS
DQ
D
DQ
D
V
DDQ
V
SS
DQ
D
DQ
D
DQ
D
DQ
D
V
SS
V
DDQ
DQ
D
DQ
D
NC
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
1
80
2
79
3
78
4
77
5
76
6
75
7
74
8
73
9
72
256K x 32
10
71
Top View
11
70
12
69
13
68
14
67
15
66
16
65
17
64
18
63
19
62
20
61
21
60
22
59
23
58
24
57
25
56
26
55
27
54
28
53
29
52
30
51
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
A
A
E
1
E
2
B
D
B
C
B
B
B
A
A
V
DD
V
SS
CK
GW
BW
G
ADSC
ADSP
ADV
A
A
NC
DQ
B
DQ
B
V
DDQ
V
SS
DQ
B
DQ
B
DQ
B
DQ
B
V
SS
V
DDQ
DQ
B
DQ
B
V
SS
NC
V
DD
ZZ
DQ
A
DQ
A
V
DDQ
V
SS
DQ
A
DQ
A
DQ
A
DQ
A
V
SS
V
DDQ
DQ
A
DQ
A
NC
LBO
A
A
A
A
A
1
A
0
TMS
TDI
V
SS
V
DD
Rev: 1.04a 10/2012
3/35
Note:
Pins marked with NC can be tied to either V
DD
or V
SS
. These pins can also be left floating.
TDO
TCK
A
A
A
A
A
A
A
© 2011, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS88118/32/36C(T/D)-xxxI
GS88136C 100-Pin TQFP Pinout (Package T)
DQP
C
DQ
C
DQ
C
V
DDQ
V
SS
DQ
C
DQ
C
DQ
C
DQ
C
V
SS
V
DDQ
DQ
C
DQ
C
FT
V
DD
NC
V
SS
DQ
D
DQ
D
V
DDQ
V
SS
DQ
D
DQ
D
DQ
D
DQ
D
V
SS
V
DDQ
DQ
D
DQ
D
DQP
D
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
1
80
2
79
3
78
4
77
5
76
6
75
7
74
8
73
9
72
256K x 36
10
71
Top View
11
70
12
69
13
68
14
67
15
66
16
65
17
64
18
63
19
62
20
61
21
60
22
59
23
58
24
57
25
56
26
55
27
54
28
53
29
52
30
51
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
A
A
E
1
E
2
B
D
B
C
B
B
B
A
A
V
DD
V
SS
CK
GW
BW
G
ADSC
ADSP
ADV
A
A
DQP
B
DQ
B
DQ
B
V
DDQ
V
SS
DQ
B
DQ
B
DQ
B
DQ
B
V
SS
V
DDQ
DQ
B
DQ
B
V
SS
NC
V
DD
ZZ
DQ
A
DQ
A
V
DDQ
V
SS
DQ
A
DQ
A
DQ
A
DQ
A
V
SS
V
DDQ
DQ
A
DQ
A
DQP
A
LBO
A
A
A
A
A
1
A
0
TMS
TDI
V
SS
V
DD
Rev: 1.04a 10/2012
4/35
Note:
Pins marked with NC can be tied to either V
DD
or V
SS
. These pins can also be left floating.
TDO
TCK
A
A
A
A
A
A
A
© 2011, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS88118/32/36C(T/D)-xxxI
TQFP Pin Description
Symbol
A
0
, A
1
A
DQ
A
DQ
B
DQ
C
DQ
D
NC
BW
B
A
, B
B,
B
C
, B
D
CK
GW
E
1
E
2
G
ADV
ADSP, ADSC
ZZ
TMS
TDI
TDO
TCK
FT
LBO
V
DD
V
SS
V
DDQ
Type
I
I
I/O
Description
Address field LSBs and Address Counter preset Inputs
Address Inputs
Data Input and Output pins
No Connect
Byte Write—Writes all enabled bytes; active low
Byte Write Enable for DQ
A
, DQ
B
Data I/Os; active low
Clock Input Signal; active high
Global Write Enable—Writes all bytes; active low
Chip Enable; active low
Chip Enable; active high
Output Enable; active low
Burst address counter advance enable; active low
Address Strobe (Processor, Cache Controller); active low
Sleep Mode control; active high
Scan Test Mode Select
Scan Test Data In
Scan Test Data Out
Scan Test Clock
Flow Through or Pipeline mode; active low
Linear Burst Order mode; active low
Core power supply
I/O and Core Ground
Output driver power supply
I
I
I
I
I
I
I
I
I
I
I
I
O
I
I
I
I
I
I
Rev: 1.04a 10/2012
5/35
© 2011, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
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