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GS881Z32CGT-200

SRAM 2.5 or 3.3V 256K x 32 8M

器件类别:存储    存储   

厂商名称:GSI Technology

厂商官网:http://www.gsitechnology.com/

器件标准:

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
GSI Technology
零件包装代码
QFP
包装说明
LQFP,
针数
100
Reach Compliance Code
compliant
ECCN代码
3A991.B.2.B
Factory Lead Time
8 weeks
最长访问时间
6.5 ns
其他特性
FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY
JESD-30 代码
R-PQFP-G100
JESD-609代码
e3
长度
20 mm
内存密度
8388608 bit
内存集成电路类型
ZBT SRAM
内存宽度
32
湿度敏感等级
3
功能数量
1
端子数量
100
字数
262144 words
字数代码
256000
工作模式
SYNCHRONOUS
最高工作温度
70 °C
最低工作温度
组织
256KX32
封装主体材料
PLASTIC/EPOXY
封装代码
LQFP
封装形状
RECTANGULAR
封装形式
FLATPACK, LOW PROFILE
并行/串行
PARALLEL
峰值回流温度(摄氏度)
260
认证状态
Not Qualified
座面最大高度
1.6 mm
最大供电电压 (Vsup)
2.7 V
最小供电电压 (Vsup)
2.3 V
标称供电电压 (Vsup)
2.5 V
表面贴装
YES
技术
CMOS
温度等级
COMMERCIAL
端子面层
Matte Tin (Sn)
端子形式
GULL WING
端子节距
0.65 mm
端子位置
QUAD
处于峰值回流温度下的最长时间
NOT SPECIFIED
宽度
14 mm
文档预览
GS881Z18/32/36C(T/D)-xxx
100-Pin TQFP & 165-Bump BGA
Commercial Temp
Features
• User-configurable Pipeline and Flow Through mode
• NBT (No Bus Turn Around) functionality allows zero wait
read-write-read bus utilization
• Fully pin-compatible with both pipelined and flow through
NtRAM™, NoBL™ and ZBT™ SRAMs
• IEEE 1149.1 JTAG-compatible Boundary Scan
• 2.5 V or 3.3 V +10%/–10% core power supply
• 2.5 V or 3.3 V I/O supply
• LBO pin for Linear or Interleave Burst mode
• Pin-compatible with 2M, 4M, and 18M devices
• Byte write operation (9-bit Bytes)
• 3 chip enable signals for easy depth expansion
• ZZ pin for automatic power-down
• JEDEC-standard packages
• RoHS-compliant 100-lead TQFP and 165-bump BGA
packages available
9Mb Pipelined and Flow Through
Synchronous NBT SRAM
333 MHz–150 MHz
2.5 V or 3.3 V V
DD
2.5 V or 3.3 V I/O
Because it is a synchronous device, address, data inputs, and
read/ write control inputs are captured on the rising edge of the
input clock. Burst order control (LBO) must be tied to a power
rail for proper operation. Asynchronous inputs include the
Sleep mode enable, ZZ and Output Enable. Output Enable can
be used to override the synchronous control of the output
drivers and turn the RAM's output drivers off at any time.
Write cycles are internally self-timed and initiated by the rising
edge of the clock input. This feature eliminates complex off-
chip write pulse generation required by asynchronous SRAMs
and simplifies input signal timing.
The GS881Z18C(T/D)/GS881Z32C(T/D)/GS881Z36C(T/D)
may be configured by the user to operate in Pipeline or Flow
Through mode. Operating as a pipelined synchronous device,
in addition to the rising-edge-triggered registers that capture
input signals, the device incorporates a rising-edge-triggered
output register. For read cycles, pipelined SRAM output data is
temporarily stored by the edge triggered output register during
the access cycle and then released to the output drivers at the
next rising edge of clock.
The GS881Z18C(T/D)/GS881Z32C(T/D)/GS881Z36C(T/D)
is implemented with GSI's high performance CMOS
technology and is available in a JEDEC-standard 100-pin
TQFP package.
Functional Description
The GS881Z18C(T/D)/GS881Z32C(T/D)/GS881Z36C(T/D)
is a 9Mbit Synchronous Static SRAM. GSI's NBT SRAMs,
like ZBT, NtRAM, NoBL or other pipelined read/double late
write or flow through read/single late write SRAMs, allow
utilization of all available bus bandwidth by eliminating the
need to insert deselect cycles when the device is switched from
read to write cycles.
Parameter Synopsis
-333
Pipeline
3-1-1-1
t
KQ
tCycle
Curr (x18)
Curr (x32/x36)
t
KQ
tCycle
Curr (x18)
Curr (x32/x36)
2.5
3.0
240
280
4.5
4.5
180
205
-300
2.5
3.3
225
260
5.0
5.0
165
190
-250
2.5
4.0
195
225
5.5
5.5
160
180
-200
3.0
5.0
170
195
6.5
6.5
140
160
-150
3.8
6.7
140
160
7.5
7.5
128
145
Unit
ns
ns
mA
mA
ns
ns
mA
mA
Flow Through
2-1-1-1
Rev: 1.04 7/2012
1/38
© 2011, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS881Z18/32/36C(T/D)-xxx
GS881Z18CT 100-Pin TQFP Pinout (Package T)
NC
NC
NC
V
DDQ
V
SS
NC
NC
DQ
B
DQ
B
V
SS
V
DDQ
DQ
B
DQ
B
FT
V
DD
NC
V
SS
DQ
B
DQ
B6
V
DD
V
SS
DQ
B
DQ
B
DQP
B
NC
V
SS
V
DDQ
NC
NC
NC
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
1
80
2
79
3
78
4
77
5
76
6
75
7
74
8
73
9
72
512K x 18
10
71
Top View
11
70
12
69
13
68
14
67
15
66
16
65
17
64
18
63
19
62
20
61
21
60
22
59
23
58
24
57
25
56
26
55
27
54
28
53
29
52
30
51
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
A
A
E
1
E
2
NC
NC
B
B
B
A
E
3
V
DD
V
SS
CK
W
CKE
G
ADV
NC
A
A
A
A
NC
NC
V
DDQ
V
SS
NC
DQP
A
DQ
A
DQ
A
V
SS
V
DDQ
DQ
A
DQ
A
V
SS
NC
V
DD
ZZ
DQ
A
DQ
A
V
DDQ
V
SS
DQ
A
DQ
A
NC
NC
V
SS
V
DDQ
NC
NC
NC
Note:
Pins marked with NC can be tied to either V
DD
or V
SS
. These pins can also be left floating.
Rev: 1.04 7/2012
LBO
A
A
A
A
A
1
A
0
TMS
TDI
V
SS
V
DD
TDO
TCK
A
A
A
A
A
A
A
1
2/38
© 2011, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS881Z18/32/36C(T/D)-xxx
GS881Z32CT 100-Pin TQFP Pinout (Package T)
NC
DQ
C
DQ
C
V
DDQ
V
SS
DQ
C
DQ
C
DQ
C
DQ
C
V
SS
V
DDQ
DQ
C
DQ
C
FT
V
DD
NC
V
SS
DQ
D
DQ
D2
V
DDQ
V
SS
DQ
D
DQ
D
DQ
D
DQ
D
V
SS
V
DDQ
DQ
D
DQ
D
NC
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
1
80
2
79
3
78
4
77
5
76
6
75
7
74
8
73
9
72
256K x 32
10
71
Top View
11
70
12
69
13
68
14
67
15
66
16
65
17
64
18
63
19
62
20
61
21
60
22
59
23
58
24
57
25
56
26
55
27
54
28
53
29
52
30
51
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
A
A
E
1
E
2
B
D
B
C
B
B
B
A
E
3
V
DD
V
SS
CK
W
CKE
G
ADV
NC
A
A
A
NC
DQ
B
DQ
B
V
DDQ
V
SS
DQ
B
DQ
B
DQ
B
DQ
B
V
SS
V
DDQ
DQ
B
DQ
B
V
SS
NC
V
DD
ZZ
DQ
A
DQ
A
V
DDQ
V
SS
DQ
A
DQ
A
DQ
A
DQ
A
V
SS
V
DDQ
DQ
A
DQ
A
NC
Note:
Pins marked with NC can be tied to either V
DD
or V
SS
. These pins can also be left floating.
Rev: 1.04 7/2012
LBO
A
A
A
A
A
1
A
0
TMS
TDI
V
SS
V
DD
TDO
TCK
A
A
A
A
A
A
A
3/38
© 2011, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS881Z18/32/36C(T/D)-xxx
GS881Z36CT 100-Pin TQFP Pinout (Package T)
DQP
C
DQ
C
DQ
C
V
DDQ
V
SS
DQ
C
DQ
C
DQ
C
DQ
C
V
SS
V
DDQ
DQ
C
DQ
C
FT
V
DD
NC
V
SS
DQ
D
DQ
D2
V
DDQ
V
SS
DQ
D
DQ
D
DQ
D
DQ
D
V
SS
V
DDQ
DQ
D
DQ
D
DQP
D
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
1
80
2
79
3
78
4
77
5
76
6
75
7
74
8
73
9
72
256K x 36
10
71
Top View
11
70
12
69
13
68
14
67
15
66
16
65
17
64
18
63
19
62
20
61
21
60
22
59
23
58
24
57
25
56
26
55
27
54
28
53
29
52
30
51
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
A
A
E
1
E
2
B
D
B
C
B
B
B
A
E
3
V
DD
V
SS
CK
W
CKE
G
ADV
NC
A
A
A
DQP
B
DQ
B
DQ
B
V
DDQ
V
SS
DQ
B
DQ
B
DQ
B
DQ
B
V
SS
V
DDQ
DQ
B
DQ
B
V
SS
NC
V
DD
ZZ
DQ
A
DQ
A
V
DDQ
V
SS
DQ
A
DQ
A
DQ
A
DQ
A
V
SS
V
DDQ
DQ
A
DQ
A
DQP
A
Note:
Pins marked with NC can be tied to either V
DD
or V
SS
. These pins can also be left floating.
Rev: 1.04 7/2012
LBO
A
A
A
A
A
1
A
0
TMS
TDI
V
SS
V
DD
TDO
TCK
A
A
A
A
A
A
A
4/38
© 2011, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS881Z18/32/36C(T/D)-xxx
100-Pin TQFP Pin Descriptions
Symbol
A
0
, A
1
A
CK
B
A
B
B
B
C
B
D
W
E
1
E
2
E
3
G
ADV
CKE
NC
DQ
A
DQ
B
DQ
C
DQ
D
DQP
A
DQP
B
DQP
C
DQP
D
ZZ
FT
LBO
V
DD
V
SS
V
DDQ
Type
In
In
In
In
In
In
In
In
In
In
In
In
In
In
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
In
In
In
In
In
In
Description
Burst Address Inputs; Preload the burst counter
Address Inputs
Clock Input Signal
Byte Write signal for data inputs DQ
A
; active low
Byte Write signal for data inputs DQ
B
; active low
Byte Write signal for data inputs DQ
C
; active low
Byte Write signal for data inputs DQ
D
; active low
Write Enable; active low
Chip Enable; active low
Chip Enable—Active High. For self decoded depth expansion
Chip Enable—Active Low. For self decoded depth expansion
Output Enable; active low
Advance/Load; Burst address counter control pin
Clock Input Buffer Enable; active low
No Connect
Byte A Data Input and Output pins
Byte B Data Input and Output pins
Byte C Data Input and Output pins
Byte D Data Input and Output pins
9th Data I/O Pin; Byte A
9th Data I/O Pin; Byte B
9th Data I/O Pin; Byte C
9th Data I/O Pin; Byte D
Power down control; active high
Pipeline/Flow Through Mode Control; active low
Linear Burst Order; active low.
Core power supply
Ground
Output driver power supply
Rev: 1.04 7/2012
5/38
© 2011, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
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参数对比
与GS881Z32CGT-200相近的元器件有:GS881Z32CGT-200I、GS881Z32CGT-250I、GS881Z32CGT-150I、GS881Z32CGT-150、GS881Z32CGT-300、GS881Z32CGT-250。描述及对比如下:
型号 GS881Z32CGT-200 GS881Z32CGT-200I GS881Z32CGT-250I GS881Z32CGT-150I GS881Z32CGT-150 GS881Z32CGT-300 GS881Z32CGT-250
描述 SRAM 2.5 or 3.3V 256K x 32 8M SRAM 2.5 or 3.3V 256K x 32 8M SRAM 2.5 or 3.3V 256K x 32 8M SRAM 2.5 or 3.3V 256K x 32 8M SRAM 2.5 or 3.3V 256K x 32 8M SRAM 2.5 or 3.3V 256K x 32 8M 静态随机存取存储器 2.5 or 3.3V 256K x 32 8M
是否无铅 不含铅 不含铅 不含铅 不含铅 不含铅 不含铅 不含铅
是否Rohs认证 符合 符合 符合 符合 符合 符合 符合
厂商名称 GSI Technology GSI Technology GSI Technology GSI Technology GSI Technology GSI Technology GSI Technology
零件包装代码 QFP QFP QFP QFP QFP QFP QFP
包装说明 LQFP, LQFP, LQFP, LQFP, LQFP, LQFP, LQFP,
针数 100 100 100 100 100 100 100
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant
ECCN代码 3A991.B.2.B 3A991.B.2.B 3A991.B.2.B 3A991.B.2.B 3A991.B.2.B 3A991.B.2.B 3A991.B.2.B
Factory Lead Time 8 weeks 8 weeks 8 weeks 8 weeks 8 weeks 8 weeks 8 weeks
最长访问时间 6.5 ns 6.5 ns 5.5 ns 7.5 ns 7.5 ns 5 ns 5.5 ns
其他特性 FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY
JESD-30 代码 R-PQFP-G100 R-PQFP-G100 R-PQFP-G100 R-PQFP-G100 R-PQFP-G100 R-PQFP-G100 R-PQFP-G100
JESD-609代码 e3 e3 e3 e3 e3 e3 e3
长度 20 mm 20 mm 20 mm 20 mm 20 mm 20 mm 20 mm
内存密度 8388608 bit 8388608 bit 8388608 bit 8388608 bit 8388608 bit 8388608 bit 8388608 bit
内存集成电路类型 ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM
内存宽度 32 32 32 32 32 32 32
湿度敏感等级 3 3 3 3 3 3 3
功能数量 1 1 1 1 1 1 1
端子数量 100 100 100 100 100 100 100
字数 262144 words 262144 words 262144 words 262144 words 262144 words 262144 words 262144 words
字数代码 256000 256000 256000 256000 256000 256000 256000
工作模式 SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
最高工作温度 70 °C 85 °C 85 °C 85 °C 70 °C 70 °C 70 °C
组织 256KX32 256KX32 256KX32 256KX32 256KX32 256KX32 256KX32
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 LQFP LQFP LQFP LQFP LQFP LQFP LQFP
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
峰值回流温度(摄氏度) 260 260 260 260 260 260 260
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 1.6 mm 1.6 mm 1.6 mm 1.6 mm 1.6 mm 1.6 mm 1.6 mm
最大供电电压 (Vsup) 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V
最小供电电压 (Vsup) 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V
标称供电电压 (Vsup) 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V
表面贴装 YES YES YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 COMMERCIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL COMMERCIAL COMMERCIAL COMMERCIAL
端子面层 Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
端子节距 0.65 mm 0.65 mm 0.65 mm 0.65 mm 0.65 mm 0.65 mm 0.65 mm
端子位置 QUAD QUAD QUAD QUAD QUAD QUAD QUAD
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
宽度 14 mm 14 mm 14 mm 14 mm 14 mm 14 mm 14 mm
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