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GS882ZV18BGB-333I

9Mb Pipelined and Flow Through Synchronous NBT SRAM

器件类别：存储    存储   

厂商名称：GSI Technology

厂商官网：http://www.gsitechnology.com/

器件标准：

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参数 预览
器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
GSI Technology
零件包装代码
BGA
包装说明
BGA,
针数
119
Reach Compliance Code
compli
ECCN代码
3A991.B.2.B
最长访问时间
4.5 ns
其他特性
FLOW-THROUGH OR PIPELINED ARCHITECTURE
JESD-30 代码
R-PBGA-B119
JESD-609代码
e1
长度
22 mm
内存密度
9437184 bi
内存集成电路类型
ZBT SRAM
内存宽度
18
湿度敏感等级
3
功能数量
1
端子数量
119
字数
524288 words
字数代码
512000
工作模式
SYNCHRONOUS
最高工作温度
85 °C
最低工作温度
-40 °C
组织
512KX18
封装主体材料
PLASTIC/EPOXY
封装代码
BGA
封装形状
RECTANGULAR
封装形式
GRID ARRAY
并行/串行
PARALLEL
峰值回流温度（摄氏度）
260
认证状态
Not Qualified
座面最大高度
1.99 mm
最大供电电压 (Vsup)
2 V
最小供电电压 (Vsup)
1.6 V
标称供电电压 (Vsup)
1.8 V
表面贴装
YES
技术
CMOS
温度等级
INDUSTRIAL
端子面层
TIN SILVER COPPER
端子形式
BALL
端子节距
1.27 mm
端子位置
BOTTOM
处于峰值回流温度下的最长时间
NOT SPECIFIED
宽度
14 mm
文档预览
GS882ZV18/36BB/D-333/300/250/200
119-bump and 165-bump BGA
Commercial Temp
Industrial Temp
Features
• NBT (No Bus Turn Around) functionality allows zero wait
Read-Write-Read bus utilization; fully pin-compatible with
both pipelined and flow through NtRAM™, NoBL™ and
ZBT™ SRAMs
• 1.8 V +10%/–10% core power supply
• 1.8 V I/O supply
• User-configurable Pipeline and Flow Through mode
• ZQ mode pin for user-selectable high/low output drive
• IEEE 1149.1 JTAG-compatible Boundary Scan
• On-chip parity encoding and error detection
• LBO pin for Linear or Interleave Burst mode
• Pin-compatible with 2M, 4M, and 18M devices
• Byte write operation (9-bit Bytes)
• 3 chip enable signals for easy depth expansion
• ZZ Pin for automatic power-down
• JEDEC-standard 119-bump BGA and 165-bump FPBGA
packages
• Pb-Free 119-bump and 165-bump BGA packages available
9Mb Pipelined and Flow Through
Synchronous NBT SRAM
333 MHz–200 MHz
1.8 V V
DD
1.8 V I/O
Because it is a synchronous device, address, data inputs, and
read/write control inputs are captured on the rising edge of the
input clock. Burst order control (LBO) must be tied to a power
rail for proper operation. Asynchronous inputs include the
Sleep mode enable (ZZ) and Output Enable. Output Enable can
be used to override the synchronous control of the output
drivers and turn the RAM's output drivers off at any time.
Write cycles are internally self-timed and initiated by the rising
edge of the clock input. This feature eliminates complex off-
chip write pulse generation required by asynchronous SRAMs
and simplifies input signal timing.
The GS882ZV18/36B may be configured by the user to
operate in Pipeline or Flow Through mode. Operating as a
pipelined synchronous device, in addition to the rising-edge-
triggered registers that capture input signals, the device
incorporates a rising edge triggered output register. For read
cycles, pipelined SRAM output data is temporarily stored by
the edge-triggered output register during the access cycle and
then released to the output drivers at the next rising edge of
clock.
The GS882ZV18/36B is implemented with GSI's high
performance CMOS technology and is available in JEDEC-
standard 119-bump BGA and 165-bump FPBGA packages.
Functional Description
The GS882ZV18/36B is a 9Mbit Synchronous Static SRAM.
GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or other
pipelined read/double late write or flow through read/single
late write SRAMs, allow utilization of all available bus
bandwidth by eliminating the need to insert deselect cycles
when the device is switched from read to write cycles.
Paramter Synopsis
-333
-300
2.5
3.3
225
250
5.0
5.0
180
200
-250
2.5
4.0
195
220
5.5
5.5
155
175
-200
3.0
5.0
165
185
6.5
6.5
140
155
Unit
ns
ns
mA
mA
ns
ns
mA
mA
Pipeline
3-1-1-1
t
KQ
tCycle
Curr (x18)
Curr (x32/x36)
t
KQ
tCycle
Curr (x18)
Curr (x32/x36)
2.5
3.0
245
275
4.5
4.5
195
220
Flow Through
2-1-1-1
Rev: 1.03 3/2005
1/33
© 2004, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
NoBL is a trademark of Cypress Semiconductor Corp.. NtRAM is a trademark of Samsung Electronics Co.. ZBT is a trademark of Integrated Device Technology, Inc.
GS882ZV18/36BB/D-333/300/250/200
GS882ZV36B Pad Out—119-Bump BGA—Top View (Package B)
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
U
V
DDQ
NC
NC
DQ
C
DQ
C
V
DDQ
DQ
C
DQ
C
V
DDQ
DQ
D
DQ
D
V
DDQ
DQ
D
DQ
D
NC
NC
V
DDQ
2
A
E
2
A
DQP
C
DQ
C
DQ
C
DQ
C
DQ
C
V
DD
DQ
D
DQ
D
DQ
D
DQ
D
DQP
D
A
NC
TMS
3
A
A
A
V
SS
V
SS
V
SS
B
C
V
SS
NC
V
SS
B
D
V
SS
V
SS
V
SS
LBO
A
TDI
4
NC
ADV
V
DD
ZQ
E
1
G
A
W
V
DD
CK
NC
CKE
A
1
A
0
V
DD
A
TCK
5
A
A
A
V
SS
V
SS
V
SS
B
B
V
SS
NC
V
SS
B
A
V
SS
V
SS
V
SS
FT
A
TDO
6
A
E
3
A
DQP
B
DQ
B
DQ
B
DQ
B
DQ
B
V
DD
DQ
A
DQ
A
DQ
A
DQ
A
DQP
A
A
NC
NC
7
V
DDQ
NC
NC
DQ
B
DQ
B
V
DDQ
DQ
B
DQ
B
V
DDQ
DQ
A
DQ
A
V
DDQ
DQ
A
DQ
A
PE
ZZ
V
DDQ
Rev: 1.03 3/2005
2/33
© 2004, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
NoBL is a trademark of Cypress Semiconductor Corp.. NtRAM is a trademark of Samsung Electronics Co.. ZBT is a trademark of Integrated Device Technology, Inc.
GS882ZV18/36BB/D-333/300/250/200
GS882ZV18B Pad Out—119-Bump BGA—Top View (Package B)
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
U
V
DDQ
NC
NC
DQ
B
NC
V
DDQ
NC
DQ
B
V
DDQ
NC
DQ
B
V
DDQ
DQ
B
NC
NC
NC
V
DDQ
2
A
E
2
A
NC
DQ
B
NC
DQ
B
NC
V
DD
DQ
B
NC
DQ
B
NC
DQP
B
A
A
TMS
3
A
A
A
V
SS
V
SS
V
SS
B
B
V
SS
NC
V
SS
NC
V
SS
V
SS
V
SS
LBO
A
TDI
4
NC
ADV
V
DD
ZQ
E
1
G
A
W
V
DD
CK
NC
CKE
A
1
A
0
V
DD
NC
TCK
5
A
A
A
V
SS
V
SS
V
SS
NC
V
SS
NC
V
SS
B
A
V
SS
V
SS
V
SS
FT
A
TDO
6
A
E
3
A
DQPA
NC
DQ
A
NC
DQ
A
V
DD
NC
DQ
A
NC
DQ
A
NC
A
A
NC
7
V
DDQ
NC
NC
NC
DQ
A
V
DDQ
DQ
A
NC
V
DDQ
DQ
A
NC
V
DDQ
NC
DQ
A
PE
ZZ
V
DDQ
Rev: 1.03 3/2005
3/33
© 2004, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
NoBL is a trademark of Cypress Semiconductor Corp.. NtRAM is a trademark of Samsung Electronics Co.. ZBT is a trademark of Integrated Device Technology, Inc.
GS882ZV18/36BB/D-333/300/250/200
165 Bump BGA—x18 Commom I/O—Top View (Package D)
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
NC
NC
NC
NC
NC
NC
NC
FT
DQB
DQB
DQB
DQB
DQB
NC
LBO
2
A
A
NC
DQB
DQB
DQB
DQB
MCH
NC
NC
NC
NC
DNU
NC
NC
3
E1
E2
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
NC
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
A
A
4
BB
NC
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
A
A
5
NC
BA
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
NC
TDI
TMS
6
E3
CK
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
NC
A1
A0
7
CKE
W
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
NC
TDO
TCK
8
ADV
G
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
A
A
9
A17
NC
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
NC
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
A
A
10
A
A
NC
NC
NC
NC
NC
ZQ
DQA
DQA
DQA
DQA
NC
A
A
11
A18
NC
DQA
DQA
DQA
DQA
DQA
ZZ
NC
NC
NC
NC
NC
NC
A
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
11 x 15 Bump BGA—13 mm x 15 mm Body—1.0 mm Bump Pitch
Rev: 1.03 3/2005
4/33
© 2004, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
NoBL is a trademark of Cypress Semiconductor Corp.. NtRAM is a trademark of Samsung Electronics Co.. ZBT is a trademark of Integrated Device Technology, Inc.
GS882ZV18/36BB/D-333/300/250/200
165 Bump BGA—x36 Common I/O—Top View (Package D)
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
NC
NC
DQC
DQC
DQC
DQC
DQC
FT
DQD
DQD
DQD
DQD
DQD
NC
LBO
2
A
A
NC
DQC
DQC
DQC
DQC
MCH
DQD
DQD
DQD
DQD
DNU
NC
NC
3
E1
E2
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
NC
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
A
A
4
BC
BD
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
A
A
5
BB
BA
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
NC
TDI
TMS
6
E3
CK
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
NC
A1
A0
7
CKE
W
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
NC
TDO
TCK
8
ADV
G
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
A
A
9
A17
NC
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
NC
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
A
A
10
A
A
NC
DQB
DQB
DQB
DQB
ZQ
DQA
DQA
DQA
DQA
NC
A
A
11
NC
NC
DQB
DQB
DQB
DQB
DQB
ZZ
DQA
DQA
DQA
DQA
DQA
NC
A
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
11 x 15 Bump BGA—13 mm x 15 mm Body—1.0 mm Bump Pitch
Rev: 1.03 3/2005
5/33
© 2004, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
NoBL is a trademark of Cypress Semiconductor Corp.. NtRAM is a trademark of Samsung Electronics Co.. ZBT is a trademark of Integrated Device Technology, Inc.
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A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ
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