GSIB620 thru GSIB680
Vishay General Semiconductor
Single-Phase Single In-Line Bridge Rectifiers
FEATURES
•
•
•
•
•
•
•
UL recognition file number E54214
Thin single in-line package
Glass passivated chip junction
High surge current capability
High case dielectric strength of 1500 V
RMS
Solder dip 260 °C, 40 s
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
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Case Style GSIB-5S
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
I
R
V
F
T
J
max.
6.0 A
200 V to 800 V
180 A
10 µA
0.95 V
150 °C
TYPICAL APPLICATIONS
General purpose use in ac-to-dc bridge full wave
rectification for switching power supply, home
appliances, office equipment, industrial automation
applications.
MECHANICAL DATA
Case:
GSIB-5S
Epoxy meets UL 94 V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity:
As marked on body
Mounting Torque:
10 cm-kg (8.8 inches-lbs) max.
Recommended Torque:
5.7 cm-kg (5 inches-lbs)
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified
output current at
T
C
= 100 °C
T
A
= 25 °C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
T
J
, T
STG
GSIB620
200
140
200
GSIB640
400
280
400
6.0
(1)
2.8
(2)
180
120
- 55 to + 150
GSIB660
600
420
600
GSIB680
800
560
800
UNIT
V
V
V
A
A
A
2
s
°C
Peak forward surge current single sine-wave
superimposed on rated load (JEDEC method)
Rating for fusing (t < 8.3 ms)
Operating junction and storage temperature range
Notes:
(1) Unit case mounted on aluminum plate heatsink
(2) Units mounted on P.C.B. with 0.5 x 0.5" (12 x 12 mm) copper pads and 0.375" (9.5 mm) lead length
Document Number: 88648
Revision: 15-Dec-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
GSIB620 thru GSIB680
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous forward
voltage drop per diode
Maximum DC reverse current at
rated DC blocking voltage per diode
TEST CONDITIONS SYMBOL
3.0 A
T
A
= 25 °C
T
A
= 125 °C
V
F
I
R
GSIB620
GSIB640
0.95
10
250
GSIB660
GSIB680
UNIT
V
µA
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
Notes:
(1) Unit case mounted on aluminum plate heatsink
(2) Units mounted on P.C.B. with 0.5 x 0.5" (12 x 12 mm) copper pads and 0.375" (9.5 mm) lead length
(3) Recommended mounting position is to bolt down on heatsink with silicone thermal compound for maximum heat transfer with #6 screw
SYMBOL
R
θJA
R
θJC
GSIB620
GSIB640
GSIB660
GSIB680
UNIT
°C/W
22
(2)
3.4
(1)
ORDERING INFORMATION
(Example)
PREFERRED P/N
GSIB660-E3/45
UNIT WEIGHT (g)
7.0
PREFERRED PACKAGE CODE
45
BASE QUANTITY
20
DELIVERY MODE
Tube
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
10
210
Heatsink Mounting, T
C
Average Forward Output Current (A)
Peak Forward Surge Current (A)
180
150
120
90
60
30
0
1
10
8
T
J
= T
J
Max.
Single Sine-Wave
6
4
P.C.B. Mounting, T
A
2
1.0 Cycle
0
0
50
100
150
100
Temperature (°C)
Number
of Cycles at 60 Hz
Figure 1. Derating Curve Output Rectified Current
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
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For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88648
Revision: 15-Dec-08
GSIB620 thru GSIB680
Vishay General Semiconductor
100
1000
T
J
= 150 °C
Instantaneous Forward Current (A)
10
Junction Capacitance (pF)
1.2
100
T
J
= 25 °C
1
T
J
= 125 °C
0.1
10
0.01
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1
0.1
1
10
100
Instantaneous Forward
Voltage
(V)
Reverse
Voltage
(V)
Figure 3. Typical Forward Characteristics Per Diode
Figure 5. Typical Junction Capacitance Per Diode
1000
T
J
= 150 °C
100
T
J
= 125 °C
10
100
Transient Thermal Impedance (°C/W)
100
Instantaneous Reverse Current (µA)
10
1
1
0.1
T
J
= 25 °C
0.01
20
40
60
80
0.1
0.01
0.1
1
10
100
Percent of Rated Peak Reverse
Voltage
(%)
t - Heating Time (s)
Figure 4. Typical Reverse Characteristics Per Diode
Figure 6. Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS
in millimeters
Case Style GSIB-5S
4.6 ± 0.2
3.6 ± 0.2
3.5 ± 0.2
3.2 ± 0.2
2.7 ± 0.2
30 ± 0.3
20 ± 0.3
+
2.5 ± 0.2
2.2 ± 0.2
1 ± 0.1
10 ± 0.2
17.5 ± 0.5
4 ± 0.2
7.5
± 0.2
7.5
± 0.2
0.7 ± 0.1
11 ± 0.2
5
Document Number: 88648
Revision: 15-Dec-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1