GSOT03C to GSOT36C
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Vishay Semiconductors
Two-Line ESD Protection in SOT-23
FEATURES
• Two-line ESD protection device
2
1
• ESD immunity acc. IEC 61000-4-2
± 30 kV contact discharge
± 30 kV air discharge
20456
3
20512
• ESD capability according to AEC-Q101:
human body model: class H3B: > 8 kV
1
• Space saving SOT-23 package
Available
MARKING
(example only)
XX
XX
• e3 - Sn
• AEC-Q101 qualified available
Available
YYY
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
20357
YYY = type code (see table below)
XX = date code
DESIGN SUPPORT TOOLS
click logo to get started
Models
Available
ORDERING INFORMATION
ENVIRONMENTAL AND QUALITY CODE
PART
RoHS-COMPLIANT +
NUMBER
TIN
AEC-Q101
LEAD (Pb)-FREE
(EXAMPLE) QUALIFIED
PLATED
STANDARD
GREEN
GSOT05C-
E
3
GSOT05C-
G
3
GSOT05C-
H
E
3
GSOT05C-
H
G
3
GSOT05C-
E
3
GSOT05C-
G
3
GSOT05C-
H
E
3
GSOT05C-
H
G
3
PACKAGING CODE
3K PER 7" REEL
(8 mm TAPE),
15K/BOX = MOQ
-08
-08
-08
-08
-18
-18
-18
-18
10K PER 13" REEL
(8 mm TAPE),
10K/BOX = MOQ
ORDERING CODE
(EXAMPLE)
GSOT05C-E3-08
GSOT05C-G3-08
GSOT05C-HE3-08
GSOT05C-HG3-08
GSOT05C-E3-18
GSOT05C-G3-18
GSOT05C-HE3-18
GSOT05C-HG3-18
PACKAGE DATA
DEVICE
NAME
GSOT03C
GSOT04C
GSOT05C
GSOT08C
GSOT12C
GSOT15C
GSOT24C
GSOT36C
PACKAGE
NAME
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
TYPE
CODE
03C
C1G
04C
C8G
05C
C2G
08C
C3G
12C
C4G
15C
C5G
24C
C6G
36C
C7G
ENVIRONMENTAL
STATUS
Standard
Green
Standard
Green
Standard
Green
Standard
Green
Standard
Green
Standard
Green
Standard
Green
Standard
Green
WEIGHT
8.8 mg
8.1 mg
8.8 mg
8.1 mg
8.8 mg
8.1 mg
8.8 mg
8.1 mg
8.8 mg
8.1 mg
8.8 mg
8.1 mg
8.8 mg
8.1 mg
8.8 mg
8.1 mg
MOLDING
COMPOUND
FLAMMABILITY
RATING
UL 94 V-0
UL 94 V-0
UL 94 V-0
UL 94 V-0
UL 94 V-0
UL 94 V-0
UL 94 V-0
UL 94 V-0
MOISTURE
SENSITIVITY LEVEL
MSL level 1
(according J-STD-020)
MSL level 1
(according J-STD-020)
MSL level 1
(according J-STD-020)
MSL level 1
(according J-STD-020)
MSL level 1
(according J-STD-020)
MSL level 1
(according J-STD-020)
MSL level 1
(according J-STD-020)
MSL level 1
(according J-STD-020)
SOLDERING
CONDITIONS
260 °C/10 s at terminals
260 °C/10 s at terminals
260 °C/10 s at terminals
260 °C/10 s at terminals
260 °C/10 s at terminals
260 °C/10 s at terminals
260 °C/10 s at terminals
260 °C/10 s at terminals
Rev. 2.6, 02-May-17
Document Number: 85824
1
For technical questions, contact:
ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
GSOT03C to GSOT36C
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS GSOT03C
PARAMETER
TEST CONDITIONS
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
SYMBOL
VALUE
30
I
PPM
30
369
P
PP
504
V
ESD
T
J
T
STG
± 30
± 30
-55 to +150
-55 to +150
W
kV
kV
°C
°C
A
W
UNIT
A
Peak pulse current
Peak pulse power
ESD immunity
Operating temperature
Storage temperature
ABSOLUTE MAXIMUM RATINGS GSOT04C
PARAMETER
TEST CONDITIONS
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
SYMBOL
VALUE
30
I
PPM
30
429
P
PP
564
V
ESD
T
J
T
STG
± 30
± 30
-55 to +150
-55 to +150
W
kV
kV
°C
°C
A
W
UNIT
A
Peak pulse current
Peak pulse power
ESD immunity
Operating temperature
Storage temperature
ABSOLUTE MAXIMUM RATINGS GSOT05C
PARAMETER
TEST CONDITIONS
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
SYMBOL
VALUE
30
I
PPM
30
480
P
PP
612
V
ESD
T
J
T
STG
± 30
± 30
-55 to +150
-55 to +150
W
kV
kV
°C
°C
A
W
UNIT
A
Peak pulse current
Peak pulse power
ESD immunity
Operating temperature
Storage temperature
Rev. 2.6, 02-May-17
Document Number: 85824
2
For technical questions, contact:
ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
GSOT03C to GSOT36C
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS GSOT08C
PARAMETER
TEST CONDITIONS
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
SYMBOL
VALUE
18
I
PPM
18
345
P
PP
400
V
ESD
T
J
T
STG
± 30
± 30
-55 to +150
-55 to +150
W
kV
kV
°C
°C
A
W
UNIT
A
Peak pulse current
Peak pulse power
ESD immunity
Operating temperature
Storage temperature
ABSOLUTE MAXIMUM RATINGS GSOT12C
PARAMETER
TEST CONDITIONS
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
SYMBOL
VALUE
12
I
PPM
12
312
P
PP
337
V
ESD
T
J
T
STG
± 30
± 30
-55 to +150
-55 to +150
W
kV
kV
°C
°C
A
W
UNIT
A
Peak pulse current
Peak pulse power
ESD immunity
Operating temperature
Storage temperature
ABSOLUTE MAXIMUM RATINGS GSOT15C
PARAMETER
TEST CONDITIONS
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
SYMBOL
VALUE
8
I
PPM
8
345
P
PP
400
V
ESD
T
J
T
STG
± 30
± 30
-55 to +150
-55 to +150
W
kV
kV
°C
°C
A
W
UNIT
A
Peak pulse current
Peak pulse power
ESD immunity
Operating temperature
Storage temperature
Rev. 2.6, 02-May-17
Document Number: 85824
3
For technical questions, contact:
ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
GSOT03C to GSOT36C
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS GSOT24C
PARAMETER
TEST CONDITIONS
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
SYMBOL
VALUE
5
I
PPM
5
235
P
PP
240
V
ESD
T
J
T
STG
± 30
± 30
-55 to +150
-55 to +150
W
kV
kV
°C
°C
A
W
UNIT
A
Peak pulse current
Peak pulse power
ESD immunity
Operating temperature
Storage temperature
ABSOLUTE MAXIMUM RATINGS GSOT36C
PARAMETER
TEST CONDITIONS
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
SYMBOL
VALUE
3.5
I
PPM
3.5
248
P
PP
252
V
ESD
T
J
T
STG
± 30
± 30
-55 to +150
-55 to +150
W
kV
kV
°C
°C
A
W
UNIT
A
Peak pulse current
Peak pulse power
ESD immunity
Operating temperature
Storage temperature
Rev. 2.6, 02-May-17
Document Number: 85824
4
For technical questions, contact:
ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
GSOT03C to GSOT36C
www.vishay.com
BiAs-MODE
(2-line Bidirectional Asymmetrical protection mode)
With the GSOTxxC two signal- or data-lines (L1, L2) can be protected against voltage transients. With pin 3 connected to ground
and pin 1 and pin 2 connected to a signal- or data-line which has to be protected. As long as the voltage level on the data- or
signal-line is between 0 V (ground level) and the specified Maximum Reverse Working Voltage (V
RWM
) the protection diode
between pin 2 and pin 3 and between pin 1 and pin 3 offers a high isolation to the ground line. The protection device behaves
like an open switch.
As soon as any positive transient voltage signal exceeds the breakdown voltage level of the protection diode, the diode
becomes conductive and shorts the transient current to ground. Now the protection device behaves like a closed switch. The
Clamping Voltage (V
C
) is defined by the breakdown voltage (V
BR
) level plus the voltage drop at the series impedance (resistance
and inductance) of the protection diode.
Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the forward direction
through the protection diode. The low Forward Voltage (V
F
) clamps the negative transient close to the ground level.
Due to the different clamping levels in forward and reverse direction the GSOTxxC clamping behavior is Bidirectional and
Asymmetrical (BiAs).
L1
L2
2
1
Vishay Semiconductors
3
BiAs
20358
Ground
If a higher surge current or peak pulse current (I
PP
) is needed, both protection diodes in the GSOTxxC can also be used in
parallel in order to “double” the performance.
This offers:
•
•
•
•
•
double surge power = double peak pulse current (2 x I
PPM
)
half of the line inductance = reduced clamping voltage
half of the line resistance = reduced clamping voltage
double line capacitance (2 x C
D
)
double reverse leakage current (2 x I
R
)
L1
2
1
3
Ground
20359
ELECTRICAL CHARACTERISTICS GSOT03C
(T
amb
= 25 °C unless otherwise specified)
between pin 1 to pin 3 or pin 2 to pin 3
PARAMETER
Protection paths
Reverse stand-off voltage
Reverse voltage
Reverse current
Reverse breakdown voltage
Reverse clamping voltage
Forward clamping voltage
Capacitance
TEST CONDITIONS/REMARKS
Number of lines which can be protected
Max. reverse working voltage
at I
R
= 100 μA
at V
R
= 3.3 V
at I
R
= 1 mA
at I
PP
= 1 A
at I
PP
= I
PPM
= 30 A
at I
PP
= 1 A
at I
PP
= I
PPM
= 30 A
at V
R
= 0 V; f = 1 MHz
at V
R
= 1.6 V; f = 1 MHz
SYMBOL
N
channel
V
RWM
V
R
I
R
V
BR
V
C
V
F
C
D
MIN.
-
-
3.3
-
4.0
-
-
-
-
-
-
TYP.
-
-
-
-
4.6
5.7
10
1
4.5
420
260
MAX.
2
3.3
-
100
5.5
7.5
12.3
1.2
-
600
-
UNIT
lines
V
V
μA
V
V
V
V
V
pF
pF
Rev. 2.6, 02-May-17
Document Number: 85824
5
For technical questions, contact:
ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
