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GT8G103_06

TRANSISTOR,IGBT,N-CHAN,400V V(BR)CES,8A I(C),TO-251AA
晶体管,IGBT,N-CHAN,400V V(BR)CES,8A I(C),TO-251AA

器件类别:半导体    分立半导体   

厂商名称:Toshiba(东芝)

厂商官网:http://toshiba-semicon-storage.com/

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器件参数
参数名称
属性值
状态
ACTIVE
端子涂层
NOT SPECIFIED
文档预览
GT8G103
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR
SILICON N CHANNEL IGBT
GT8G103
STROBE FLASH APPLICATIONS
3rd Generation
Enhancement−Mode
Low Saturation Voltage: V
CE (sat)
= 8 V (Max.) (@I
C
= 150 A)
4.5 V Gate Drive
(A)
Unit: mm
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
Collector−Emitter Voltage
Gate−Emitter Voltage
Collector Current
Collector Power
Dissipation
Junction Temperature
Storage Temperature Range
DC
Pulse
DC
1 ms
Ta = 25°C
Tc = 25°C
SYMBOL
V
CES
V
GES
V
GES
I
C
I
CP
P
C
P
C
T
j
T
stg
RATING
400
±6
±8
8
150
1.3
20
150
−55~150
UNIT
V
V
V
A
A
W
W
°C
°C
(B)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual reliability
data (i.e. reliability test report and estimated failure rate, etc).
JEDEC
JEITA
TOSHIBA (A) 2-7B5C (B) 2-7B6C
Weight: 0.36 g (typ.)
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
Gate Leakage Current
Collector Cut−off Current
Gate−Emitter Cut−off Voltage
Collector−Emitter Saturation Voltage
Input Capacitance
Rise Time
Switching Time
Turn−on Time
Fall Time
Turn−off Time
Thermal Resistance
SYMBOL
I
GES
I
CES
V
GE (OFF)
V
CE (sat)
C
ies
t
r
t
on
t
f
t
off
R
th (j−c)
TEST CONDITION
V
GE
= 6 V, V
CE
= 0
V
CE
= 400 V, V
GE
= 0
I
C
= 1 mA, V
CE
= 5 V
I
C
= 150 A, V
GE
= 4.5 V (Pulsed)
V
CE
= 10 V, V
GE
= 0, f = 1 MHz
MIN
0.5
TYP.
5
1900
1.2
1.4
1.8
2.4
MAX
10
10
1.2
8
6.25
°C / W
μs
UNIT
μA
μA
V
V
pF
These devices are MOS type. Users should follow proper ESD Handling Procedures.
Operating condition of turn-off dv / dt should be lower than 400 V /
μs.
1
2006-11-02
GT8G103
2
2006-11-02
GT8G103
3
2006-11-02
GT8G103
4
2006-11-02
GT8G103
RESTRICTIONS ON PRODUCT USE
The information contained herein is subject to change without notice.
20070701-EN
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
5
2006-11-02
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