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GVA-81+

Monolithic Amplifier

器件类别:无线/射频/通信    射频和微波   

厂商名称:Mini-Circuits

厂商官网:https://www.minicircuits.com

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Mini-Circuits
包装说明
TO-243
Reach Compliance Code
compliant
ECCN代码
EAR99
Samacsys Description
High Dynamic Range MMIC Amplifier, DC to 6 GHz
构造
COMPONENT
增益
7.5 dB
最大输入功率 (CW)
20 dBm
JESD-609代码
e2
安装特点
SURFACE MOUNT
功能数量
1
端子数量
3
最大工作频率
7000 MHz
最小工作频率
最高工作温度
85 °C
最低工作温度
-40 °C
封装主体材料
PLASTIC/EPOXY
封装等效代码
TO-243
电源
5 V
射频/微波设备类型
WIDE BAND LOW POWER
最大压摆率
112 mA
表面贴装
YES
端子面层
Tin/Silver (Sn/Ag) - with Nickel (Ni) barrier
Base Number Matches
1
文档预览
5 Volt-Surface Mount
Monolithic Amplifier
Product Features
• Gain,10 dB typ. at 100 MHz
• High Pout, P1dB 19.1 dBm typ.
• High IP3, 42 dBm typ. at 100 MHz
• Ruggedized design
• Fixed 5V operation
• Unconditionally stable
• Excellent ESD Protection
• Transient protected, US patent 6,943,629
DC-7 GHz
GVA-81+
CASE STYLE: DF782
PRICE: $1.82 ea. QTY. (25)
Typical Applications
+ RoHS compliant in accordance
with EU Directive (2002/95/EC)
The +Suffix has been added in order to identify RoHS
Compliance. See our web site for RoHS Compliance
methodologies and qualifications.
• Base station infrastructure
• Portable Wireless
• CATV & DBS
• MMDS & Wireless LAN
• LTE
General Description
GVA-81+ (RoHS compliant) is a wideband amplifier offering high dynamic range. Lead finish is SnAgNi.
It has repeatable performance from lot to lot and is enclosed in a SOT-89 package. It uses patented
Transient Protected Darlington configuration and is fabricated using InGaP HBT technology.
simplified schematic and pin description
RF-OUT and DC-IN
RF IN
4
3 R F -OUT & DC-IN
2 G R OUND
1 R F -IN
GROUND
Function
RF IN
Pin Number
1
Description
RF input pin. This pin requires the use of an external DC blocking capacitor chosen
for the frequency of operation.
RF output and bias pin. DC voltage is present on this pin; therefore a DC blocking
capacitor is necessary for proper operation. An RF choke is needed to feed DC bias
without loss of RF signal due to the bias connection, as shown in “Recommended
Application Circuit”, Fig. 2
Connections to ground. Use via holes as shown in “Suggested Layout for PCB
Design” to reduce ground path inductance for best performance.
RF-OUT and DC-IN
3
GND
2,4
Mini-Circuits
TM
®
minicircuits.com
ISO 9001 ISO 14001
AS 9100
CERTIFIED
P.O. Box 350166, Brooklyn, New York 11235-0003 (718) 934-4500 Fax (718) 332-4661 For detailed performance specs & shopping online see Mini-Circuits web site
The Design Engineers Search Engine
Provides ACTUAL Data Instantly From MINI-CIRCUITS At:
www.minicircuits.com
REV. OR
M122194
GVA-81+
ED-12353/2
090327
Page 1 of 5
IF/RF MICROWAVE COMPONENTS
Monolithic InGaP HBT MMIC Amplifier
Electrical Specifications
(1)
at 25°C and 5V, unless noted
Parameter
Frequency Range
(2)
Gain
0.1
1.0
2.0
3.0
4.0
6.0
7.0
0.1
1.0
2.0
3.0
4.0
6.0
7.0
Input Return Loss
0.1
1.0
2.0
3.0
4.0
6.0
7.0
0.1
1.0
2.0
3.0
4.0
6.0
7.0
Reverse Isolation
Output Power @1 dB compression
2.0
0.1
1.0
2.0
3.0
4.0
6.0
7.0
Output IP3
0.1
1.0
2.0
3.0
4.0
6.0
7.0
0.1
1.0
2.0
3.0
4.0
6.0
7.0
2.0
4.8
93
17.5
17.5
17.5
GVA-81+
Condition
(GHz)
Min.
DC
9.5
8.8
7.5
Typ.
Max.
7
11.5
11.0
10.0
Units
GHz
dB
Magnitude of Gain Variation versus Temperature
(3)
(values are negative)
10.5
10.5
10.0
9.3
8.7
8.1
7.6
0.0005
0.0010
0.0016
0.0020
0.0025
0.0036
0.0063
38.0
27.0
20.1
17.4
16.9
18.5
14.3
21.4
20.6
17.4
14.5
13.1
14.8
13.2
20.8
19.1
19.1
19.7
19.7
19.4
17.7
17.7
42.0
38.3
36.6
35.0
33.2
31.1
31.1
7.3
7.3
7.4
7.6
7.7
8.3
8.9
98
5.0
103
62
0.036
65
dB/°C
0.005
dB
14.0
Output Return Loss
dB
12.0
dB
dBm
dBm
32.0
Noise Figure
8.6
9.0
dB
Group Delay
Device Operating Voltage
Device Operating Current
Device Current Variation vs. Temperature
Device Current Variation vs. Voltage
Thermal Resistance, junction-to-ground lead
(1)
(2)
psec
5.2
112
V
mA
µA/°C
mA/mV
°C/W
Measured on Mini-Circuits test board TB-313. See Characterization Test Circuit (Fig. 1)
Guaranteed specification DC*-7 GHz. *Low frequency cut off determined by external coupling capacitors and RF Choke (RFC).
(3)
(Gain at 85°C - Gain at -45°C)/130
Mini-Circuits
TM
®
minicircuits.com
ISO 9001 ISO 14001
AS 9100
CERTIFIED
Page 2 of 5
P.O. Box 350166, Brooklyn, New York 11235-0003 (718) 934-4500 Fax (718) 332-4661 For detailed performance specs & shopping online see Mini-Circuits web site
The Design Engineers Search Engine
Provides ACTUAL Data Instantly From MINI-CIRCUITS At:
www.minicircuits.com
IF/RF MICROWAVE COMPONENTS
Monolithic InGaP HBT MMIC Amplifier
Absolute Maximum Ratings
Parameter
Operating Temperature (ground lead)
Storage Temperature
Operating Current at 5V
Power Dissipation
Input Power
DC Voltage on Pin 3
GVA-81+
Ratings
-40°C to 85°C
-65°C to 150°C
160mA
1.0W
20 dBm
5.8V
Note:
Permanent damage may occur if any of these limits are exceeded.
Electrical maximum ratings are not intended for continuous normal operation.
Characterization Test Circuit
Vcc (Supply voltage)
+5V
RF-IN
BLK-18+
1
2,4
DUT
3
Bias-Tee
ZX85-12G-S+
RF-OUT
TB-313
Fig 1.
Block Diagram of Test Circuit used for characterization. (DUT soldered on Mini-Circuits Test Board TB-313)
Gain, Output power at 1dB compression (P1 dB) and output IP3 (OIP3) are measured using R&S Network Analyzer ZVA-24.
Noise Figure measured using Agilent’s N5242A PNA-X microwave network analyzer.
Conditions:
1. Gain and Return loss: Pin= -25dBm
2. Output IP3 (OIP3): Two tones, spaced 1 MHz apart, 0 dBm/tone at output.
Mini-Circuits
TM
®
minicircuits.com
ISO 9001 ISO 14001
AS 9100
CERTIFIED
Page 3 of 5
P.O. Box 350166, Brooklyn, New York 11235-0003 (718) 934-4500 Fax (718) 332-4661 For detailed performance specs & shopping online see Mini-Circuits web site
The Design Engineers Search Engine
Provides ACTUAL Data Instantly From MINI-CIRCUITS At:
www.minicircuits.com
IF/RF MICROWAVE COMPONENTS
Monolithic InGaP HBT MMIC Amplifier
Product Marking
GVA-81+
V81
Additional Detailed Technical Information
Additional information is available on our web site. To access this information enter the model number on
our web site home page.
Performance data, graphs, s-parameter (S2P FILES) data set (.zip file)
Case Style:
DF782 (SOT 89)
Plastic package, exposed paddle, lead finish: tin/silver/nickel
Tape & Reel:
F55
Suggested Layout for PCB Design:
PL-255
Evaluation Board:
TB-410-81+
Environmental Ratings:
ENV08T1
Recommended Application Circuit
V cc
C bypas s
C block
IN
1
2
4
Ibias
3
Vd
C block
R FC
OUT
Fig 2. Test Board includes case, connectors, and components soldered to PCB
Mini-Circuits
TM
®
minicircuits.com
ISO 9001 ISO 14001
AS 9100
CERTIFIED
Page 4 of 5
P.O. Box 350166, Brooklyn, New York 11235-0003 (718) 934-4500 Fax (718) 332-4661 For detailed performance specs & shopping online see Mini-Circuits web site
The Design Engineers Search Engine
Provides ACTUAL Data Instantly From MINI-CIRCUITS At:
www.minicircuits.com
IF/RF MICROWAVE COMPONENTS
Monolithic InGaP HBT MMIC Amplifier
ESD Rating
GVA-81+
Human Body Model (HBM): Class 1C (1000v to < 2000v) in accordance with ANSI/ESD STM 5.1 - 2001
Machine Model (MM): Class M2 (100V to < 200V) in accordance with ANSI/ESD STM 5.2 - 1999
Moisture Sensitivity: MSL1 in accordance with IPC/JEDECJ-STD-020D
MSL Rating
MSL Test Flow Chart
Start
Visual
Inspection
Electrical Test
SAM Analysis
Reflow 3 cycles,
260°C
Soak
85°C/85RH
168 hours
Bake at 125°C,
24 hours
Visual
Inspection
Electrical Test
SAM Analysis
Mini-Circuits
TM
®
minicircuits.com
ISO 9001 ISO 14001
AS 9100
CERTIFIED
Page 5 of 5
P.O. Box 350166, Brooklyn, New York 11235-0003 (718) 934-4500 Fax (718) 332-4661 For detailed performance specs & shopping online see Mini-Circuits web site
The Design Engineers Search Engine
Provides ACTUAL Data Instantly From MINI-CIRCUITS At:
www.minicircuits.com
IF/RF MICROWAVE COMPONENTS
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参数对比
与GVA-81+相近的元器件有:GVA-81。描述及对比如下:
型号 GVA-81+ GVA-81
描述 Monolithic Amplifier Monolithic Amplifier
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