首页 > 器件类别 > 存储 > 存储

GVT71128C32T-6I

Standard SRAM, 128KX32, 6ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100

器件类别:存储    存储   

厂商名称:Cypress(赛普拉斯)

下载文档
器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
Cypress(赛普拉斯)
零件包装代码
QFP
包装说明
14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
针数
100
Reach Compliance Code
compliant
ECCN代码
3A991.B.2.A
最长访问时间
6 ns
其他特性
PIPELINED ARCHITECTURE
最大时钟频率 (fCLK)
83 MHz
I/O 类型
COMMON
JESD-30 代码
R-PQFP-G100
JESD-609代码
e0
长度
20 mm
内存密度
4194304 bit
内存集成电路类型
STANDARD SRAM
内存宽度
32
湿度敏感等级
3
功能数量
1
端子数量
100
字数
131072 words
字数代码
128000
工作模式
SYNCHRONOUS
最高工作温度
85 °C
最低工作温度
-40 °C
组织
128KX32
输出特性
3-STATE
封装主体材料
PLASTIC/EPOXY
封装代码
LQFP
封装等效代码
QFP100,.63X.87
封装形状
RECTANGULAR
封装形式
FLATPACK, LOW PROFILE
并行/串行
PARALLEL
峰值回流温度(摄氏度)
NOT SPECIFIED
电源
2.5/3.3,3.3 V
认证状态
Not Qualified
座面最大高度
1.6 mm
最大待机电流
0.002 A
最小待机电流
3.14 V
最大压摆率
0.185 mA
最大供电电压 (Vsup)
3.6 V
最小供电电压 (Vsup)
3.1 V
标称供电电压 (Vsup)
3.3 V
表面贴装
YES
技术
CMOS
温度等级
INDUSTRIAL
端子面层
TIN LEAD
端子形式
GULL WING
端子节距
0.65 mm
端子位置
QUAD
处于峰值回流温度下的最长时间
NOT SPECIFIED
宽度
14 mm
文档预览
CY7C1340A/
GVT71128C32
128K x 32 Synchronous-Pipelined RAM
Features
Fast access times: 5, 6, and 7 ns
Fast clock speed: 100, 83, and 66 MHz
Provides high performance 3-1-1-1 access rate
Fast OE access times: 5, 6, and 7 ns
Optimal for performance (two-cycle chip deselect,
depth expansion without wait state)
Single +3.3V –5% and +10%power supply
Supports +2.5V I/O
5V tolerant inputs except I/Os
Clamp diodes to V
SSQ
at all outputs
Common data inputs and outputs
Byte Write Enable and Global Write control
Three chip enables for depth expansion and address
pipeline
Address, control, input, and output pipeline registers
Internally self-timed Write Cycle
Burst control pins (interleaved or linear burst
sequence)
Automatic power-down for portable applications
High-density, high-speed packages
Low-capacitive bus loading
High 30-pF output drive capability at rated access time
The
CY7C1340A/GVT71128C32
SRAM
integrates
131,072 × 32 SRAM cells with advanced synchronous
peripheral circuitry and a two-bit counter for internal burst
operation. All synchronous inputs are gated by registers
controlled by a positive-edge-triggered Clock Input (CLK). The
synchronous inputs include all addresses, all data inputs,
address-pipelining chip enable (CE), depth-expansion Chip
Enables (CE2 and CE2), Burst Control Inputs (ADSC, ADSP,
and ADV), Write Enables (BW1, BW2, BW3, BW4, and BWE),
and Global Write (GW).
Asynchronous inputs include the Output Enable (OE) and
Burst Mode Control (MODE). The data outputs (Q), enabled
by OE, are also asynchronous.
Addresses and chip enables are registered with either
Address Status Processor (ADSP) or Address Status
Controller (ADSC) input pins. Subsequent burst addresses
can be internally generated as controlled by the Burst Advance
Pin (ADV).
Address, data inputs, and Write controls are registered on-chip
to initiate self-timed Write cycle. Write cycles can be one to
four bytes wide as controlled by the Write control inputs.
Individual byte Write allows individual byte to be written. BW1
controls DQ1–DQ8. BW2 controls DQ9–DQ16. BW3 controls
DQ17–DQ24. BW4 controls DQ25–DQ32. BW1, BW2, BW3,
and BW4 can be active only with BWE being LOW. GW being
LOW causes all bytes to be written. This device also incorpo-
rates pipelined enable circuit for easy depth expansion without
penalizing system performance.
The CY7C1340A/GVT71128C32 operates from a +3.3V
power supply. All inputs and outputs are TTL-compatible. The
device is ideally suited for 486, Pentium®, 680 × 0, and
PowerPC™ systems and for systems that benefit from a wide
synchronous data bus.
Functional Description
The Cypress Synchronous Burst SRAM family employs
high-speed, low-power CMOS designs using advanced
triple-layer polysilicon, double-layer metal technology. Each
memory cell consists of four transistors and two high valued
resistors.
Selection Guide
7C1340A-100
71128C36-5
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
5
225
2
7C1340A-83
71128C36-6
6
185
2
7C1340A-66
71128C36-7
7
120
2
Unit
ns
mA
mA
Cypress Semiconductor Corporation
Document #: 38-05153 Rev. *A
3901 North First Street
San Jose
CA 95134 • 408-943-2600
Revised January 16, 2002
CY7C1340A/
GVT71128C32
Functional Block Diagram
[1]
BYTE 1 WRITE
BW1#
BWE#
CLK
D
Q
BYTE 2 WRITE
BW2#
D
Q
GW#
BYTE 3 WRITE
BW3#
D
Q
BYTE 4 WRITE
BW4#
D
Q
byte 4 write
byte 3 write
Output Buffers
byte 2 write
byte 1 write
DQ1-
DQ32
CE#
CE2
CE2#
OE#
ZZ
Power Down Logic
ENABLE
D
Q
D
Q
ADSP#
A16-A2
ADSC#
CLR
ADV#
A1-A0
MODE
Binary
Counter
& Logic
Input
Register
Address
Register
128K x 8 x 4
SRAM Array
OUTPUT
REGISTER
D
Q
Note:
1. The functional block diagram illustrates simplified device operation. See
Truth Table, pin descriptions, and timing diagrams for detailed information.
Document #: 38-05153 Rev. *A
Page 2 of 12
CY7C1340A/
GVT71128C32
Pin Configuration
100-pin TQFP
Top View
A6
A7
CE
CE2
BW4
BW3
BW2
BW1
CE2
V
CC
V
SS
CLK
GW
BWE
OE
ADSC
ADSP
ADV
A8
A9
NC
DQ17
DQ18
V
CCQ
V
SSQ
DQ19
DQ20
DQ21
DQ22
V
SSQ
V
CCQ
DQ23
DQ24
NC
V
CC
NC
V
SS
DQ25
DQ26
V
CCQ
V
SSQ
DQ27
DQ28
DQ29
DQ30
V
SSQ
V
CCQ
DQ31
DQ32
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
83
82
81
CY7C1340A
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
NC
DQ16
DQ15
V
CCQ
V
SSQ
DQ14
DQ13
DQ12
DQ11
V
SSQ
V
CCQ
DQ10
DQ9
V
SS
NC
V
CC
ZZ
DQ8
DQ7
V
CCQ
V
SSQ
DQ6
DQ5
DQ4
DQ3
V
SSQ
V
CCQ
DQ2
DQ1
NC
Document #: 38-05153 Rev. *A
MODE
A5
A4
A3
A2
A1
A0
NC
NC
V
SS
V
CC
NC
NC
A10
A11
A12
A13
A14
A15
A16
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
Page 3 of 12
CY7C1340A/
GVT71128C32
Pin Descriptions
Name
A0–A16
Type
Input-
Synchronous
Input-
Synchronous
Description
Addresses:
These inputs are registered and must meet the set-up and hold times around
the rising edge of CLK. The burst counter generates internal addresses associated with
A0 and A1, during burst cycle and wait cycle.
Byte Write:
A byte Write is LOW for a Write cycle and HIGH for a Read cycle. BW1 controls
DQ1–DQ8. BW2 controls DQ9–DQ16. BW3 controls DQ17–DQ24. BW4 controls
DQ25–DQ32. Data I/O are high-impedance if either of these inputs are LOW, conditioned
by BWE being LOW.
Write Enable:
This active LOW input gates byte Write operations and must meet the set-up
and hold times around the rising edge of CLK.
Global Write:
This active LOW input allows a full 32-bit Write to occur independent of the
BWE and BWn lines and must meet the set-up and hold times around the rising edge of
CLK.
Clock:
This signal registers the addresses, data, chip enables, Write control and burst
control inputs on its rising edge. All synchronous inputs must meet set-up and hold times
around the clock’s rising edge.
Chip Enable:
This active LOW input is used to enable the device and to gate ADSP.
Chip Enable:
This active LOW input is used to enable the device.
Chip Enable:
This active HIGH input is used to enable the device.
Output Enable:
This active LOW asynchronous input enables the data output drivers.
Address Advance:
This active LOW input is used to control the internal burst counter.
A HIGH on this pin generates wait cycle (no address advance).
Address Status Processor:
This active LOW input, along with CE being LOW, causes a
new external address to be registered and a Read cycle is initiated using the new address.
Address Status Controller:
This active LOW input causes device to be de-selected or
selected along with new external address to be registered. A Read or Write cycle is initiated
depending upon Write control inputs.
Mode:
This input selects the burst sequence. A LOW on this pin selects Linear Burst. A NC
or HIGH on this pin selects Interleaved Burst.
Snooze:
This active HIGH input puts the device in low power consumption standby mode.
For normal operation, this input has to be either LOW or NC (No Connect).
Data Inputs/Outputs:
First Byte is DQ1–DQ8. Second Byte is DQ9–DQ16. Third Byte is
DQ17–DQ24. Fourth Byte is DQ25–DQ32. Input data must meet set-up and hold times
around the rising edge of CLK.
Power Supply:
+3.3V –5% to +10%. Pin 14 does not have to be connected directly to V
CC
as long as it is greater than V
IH
.
Ground:
GND
Output Buffer Supply:
+3.3V –5% to +10%. For 2.5V I/O: 2.375V to V
CC
.
Output Buffer Ground:
GND
No Connect:
These signals are not internally connected.
BW1, BW2,
BW3, BW4
BWE
GW
Input-
Synchronous
Input-
Synchronous
Input-
Synchronous
Input-
Synchronous
Input-
Synchronous
Input-
Synchronous
Input
Input-
Synchronous
Input-
Synchronous
Input-
Synchronous
Input-
Static
Input-
Asynchronous
Input/
Output
Supply
Ground
I/O Supply
I/O Ground
-
CLK
CE
CE2
CE2
OE
ADV
ADSP
ADSC
MODE
ZZ
DQ1–
DQ32
V
CC
V
SS
V
CCQ
V
SSQ
NC
Burst Address Table (MODE = NC/V
CC
)
First
Address
(external)
A...A00
A...A01
A...A10
A...A11
Second
Address
(internal)
A...A01
A...A00
A...A11
A...A10
Third
Address
(internal)
A...A10
A...A11
A...A00
A...A01
Fourth
Address
(internal)
A...A11
A...A10
A...A01
A...A00
Burst Address Table (MODE = GND)
First
Address
(external)
A...A00
A...A01
A...A10
A...A11
Second
Address
(internal)
A...A01
A...A10
A...A11
A...A00
Third
Address
(internal)
A...A10
A...A11
A...A00
A...A01
Fourth
Address
(internal)
A...A11
A...A00
A...A01
A...A10
Page 4 of 12
Document #: 38-05153 Rev. *A
CY7C1340A/
GVT71128C32
Truth Table
[2, 3, 4, 5, 6, 7, 8]
Operation
Deselected Cycle, Power Down
Deselected Cycle, Power Down
Deselected Cycle, Power Down
Deselected Cycle, Power Down
Deselected Cycle, Power Down
Read Cycle, Begin Burst
Read Cycle, Begin Burst
Write Cycle, Begin Burst
Read Cycle, Begin Burst
Read Cycle, Begin Burst
Read Cycle, Continue Burst
Read Cycle, Continue Burst
Read Cycle, Continue Burst
Read Cycle, Continue Burst
Write Cycle, Continue Burst
Write Cycle, Continue Burst
Read Cycle, Suspend Burst
Read Cycle, Suspend Burst
Read Cycle, Suspend Burst
Read Cycle, Suspend Burst
Write Cycle, Suspend Burst
Write Cycle, Suspend Burst
Address
Used
None
None
None
None
None
External
External
External
External
External
Next
Next
Next
Next
Next
Next
Current
Current
Current
Current
Current
Current
CE
H
L
L
L
L
L
L
L
L
L
X
X
H
H
X
H
X
X
H
H
X
H
CE2 CE2 ADSP
X
X
H
X
H
L
L
L
L
L
X
X
X
X
X
X
X
X
X
X
X
X
X
L
X
L
X
H
H
H
H
H
X
X
X
X
X
X
X
X
X
X
X
X
X
L
L
H
H
L
L
H
H
H
H
H
X
X
H
X
H
H
X
X
H
X
ADSC
L
X
X
L
L
X
X
L
L
L
H
H
H
H
H
H
H
H
H
H
H
H
ADV
X
X
X
X
X
X
X
X
X
X
L
L
L
L
L
L
H
H
H
H
H
H
WRITE
X
X
X
X
X
X
X
L
H
H
H
H
H
H
L
L
H
H
H
H
L
L
OE
X
X
X
X
X
L
H
X
L
H
L
H
L
H
X
X
L
H
L
H
X
X
CLK
L–H
L–H
L–H
L–H
L–H
L–H
L–H
L–H
L–H
L–H
L–H
L–H
L–H
L–H
L–H
L–H
L–H
L–H
L–H
L–H
L–H
L–H
DQ
High-Z
High-Z
High-Z
High-Z
High-Z
Q
High-Z
D
Q
High-Z
Q
High-Z
Q
High-Z
D
D
Q
High-Z
Q
High-Z
D
D
Partial Truth Table for Read/Write
FUNCTION
Read
Read
Write one byte
Write all bytes
Write all bytes
GW
H
H
H
H
L
BWE
H
L
L
L
X
BW1
X
H
L
L
X
BW2
X
H
H
L
X
BW3
X
H
H
L
X
BW4
X
H
H
L
X
Notes:
2. X means “Don’t Care.” H means logic HIGH. L means logic LOW. Write = L means [BWE + BW1*BW2*BW3*BW4]*GW equals LOW. Write = H means
[BWE + BW1*BW2*BW3*BW4]*GW equals HIGH.
3. BW1 enables Write to DQ1–DQ8. BW2 enables Write to DQ9–DQ16. BW3 enables Write to DQ17–DQ24. BW4 enables Write to DQ25–DQ32.
4. All inputs except OE must meet set-up and hold times around the rising edge (LOW–HIGH) of CLK.
5. Suspending burst generates Wait cycle.
6. For a Write operation following a Read operation, OE must be HIGH before the input data required set-up time plus High-Z time for OE and staying HIGH
throughout the input data hold time.
7. This device contains circuitry that will ensure the outputs will be in High-Z during power-up.
8. ADSP LOW along with chip being selected always initiates a Read cycle at the L–H edge of CLK. A Write cycle can be performed by setting Write LOW for the
CLK L–H edge of the subsequent wait cycle. Refer to Write timing diagram for clarification.
Document #: 38-05153 Rev. *A
Page 5 of 12
查看更多>
参数对比
与GVT71128C32T-6I相近的元器件有:GVT71128C32T-7、GVT71128C32T-7I、GVT71128C32T-6、GVT71128C32T-5。描述及对比如下:
型号 GVT71128C32T-6I GVT71128C32T-7 GVT71128C32T-7I GVT71128C32T-6 GVT71128C32T-5
描述 Standard SRAM, 128KX32, 6ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100 Standard SRAM, 128KX32, 7ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100 Standard SRAM, 128KX32, 7ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100 Standard SRAM, 128KX32, 6ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100 Standard SRAM, 128KX32, 5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
零件包装代码 QFP QFP QFP QFP QFP
包装说明 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100 LQFP, QFP100,.63X.87 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100 LQFP, QFP100,.63X.87 LQFP, QFP100,.63X.87
针数 100 100 100 100 100
Reach Compliance Code compliant compliant compliant compliant compliant
ECCN代码 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A
最长访问时间 6 ns 7 ns 7 ns 6 ns 5 ns
其他特性 PIPELINED ARCHITECTURE PIPELINED ARCHITECTURE PIPELINED ARCHITECTURE PIPELINED ARCHITECTURE PIPELINED ARCHITECTURE
最大时钟频率 (fCLK) 83 MHz 66 MHz 66 MHz 83 MHz 100 MHz
I/O 类型 COMMON COMMON COMMON COMMON COMMON
JESD-30 代码 R-PQFP-G100 R-PQFP-G100 R-PQFP-G100 R-PQFP-G100 R-PQFP-G100
JESD-609代码 e0 e0 e0 e0 e0
长度 20 mm 20 mm 20 mm 20 mm 20 mm
内存密度 4194304 bit 4194304 bit 4194304 bit 4194304 bit 4194304 bit
内存集成电路类型 STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM
内存宽度 32 32 32 32 32
功能数量 1 1 1 1 1
端子数量 100 100 100 100 100
字数 131072 words 131072 words 131072 words 131072 words 131072 words
字数代码 128000 128000 128000 128000 128000
工作模式 SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
最高工作温度 85 °C 70 °C 85 °C 70 °C 70 °C
组织 128KX32 128KX32 128KX32 128KX32 128KX32
输出特性 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 LQFP LQFP LQFP LQFP LQFP
封装等效代码 QFP100,.63X.87 QFP100,.63X.87 QFP100,.63X.87 QFP100,.63X.87 QFP100,.63X.87
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
电源 2.5/3.3,3.3 V 2.5/3.3,3.3 V 2.5/3.3,3.3 V 2.5/3.3,3.3 V 2.5/3.3,3.3 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 1.6 mm 1.6 mm 1.6 mm 1.6 mm 1.6 mm
最大待机电流 0.002 A 0.002 A 0.002 A 0.002 A 0.002 A
最小待机电流 3.14 V 3.14 V 3.14 V 3.14 V 3.14 V
最大压摆率 0.185 mA 0.12 mA 0.12 mA 0.185 mA 0.225 mA
最大供电电压 (Vsup) 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V
最小供电电压 (Vsup) 3.1 V 3.1 V 3.1 V 3.1 V 3.1 V
标称供电电压 (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
表面贴装 YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS
温度等级 INDUSTRIAL COMMERCIAL INDUSTRIAL COMMERCIAL COMMERCIAL
端子面层 TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING
端子节距 0.65 mm 0.65 mm 0.65 mm 0.65 mm 0.65 mm
端子位置 QUAD QUAD QUAD QUAD QUAD
宽度 14 mm 14 mm 14 mm 14 mm 14 mm
厂商名称 Cypress(赛普拉斯) - - Cypress(赛普拉斯) Cypress(赛普拉斯)
热门器件
热门资源推荐
器件捷径:
E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ
需要登录后才可以下载。
登录取消