GWM 120-0075P3
Three phase full Bridge
with Trench MOSFETs
in DCB isolated high current package
L+
G1
S1
G3
S3
G5
S5
L1
L2
L3
G4
S4
G6
S6
L-
V
DSS
= 75 V
= 118 A
I
D25
R
DSon typ.
= 3.7 mW
Bent leads
Surface Mount
Device
G2
S2
Straight leads
MOSFETs
Symbol
V
DSS
V
GS
I
D25
I
D90
I
F25
I
F90
Symbol
T
C
= 25°C
T
C
= 90°C
T
C
= 25°C (diode)
T
C
= 90°C (diode)
Conditions
Conditions
T
VJ
= 25°C to 150°C
Maximum Ratings
75
±
20
118
85
120
78
V
V
A
A
A
A
Applications
AC drives
• in automobiles
- electric power steering
- starter generator
• in industrial vehicles
- propulsion drives
- fork lift drives
• in battery supplied equipment
Features
• MOSFETs in trench technology:
- low RDSon
- optimized intrinsic reverse diode
• package:
- high level of integration
- high current capability 300 A max.
- aux. terminals for MOSFET control
- terminals for soldering or welding
connections
- isolated DCB ceramic base plate
with optimized heat transfer
• Space and weight savings
Package options
• 3 lead forms available
- straight leads (SL)
- SMD lead version (SMD)
- bent leads (BL)
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
typ.
3.7
8.4
2
T
VJ
= 25°C
T
VJ
= 125°C
0.1
0.2
100
19
28
80
80
510
100
0.12
0.40
0.02
1.3
1.0
1.6
max.
5.5
4
1
mW
mW
V
µA
mA
µA
nC
nC
nC
ns
ns
ns
ns
mJ
mJ
mJ
K/W
K/W
R
DSon
V
GS(th)
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
recoff
R
thJC
R
thJH
on chip level at
V
GS
= 10 V; I
D
= 60 A
V
DS
= 20 V; I
D
= 1 mA
V
DS
= V
DSS
; V
GS
= 0 V
V
GS
=
±
20 V; V
DS
= 0 V
T
VJ
= 25°C
T
VJ
= 125°C
V
GS
= 10 V; V
DS
= 55 V; I
D
= 125 A
V
GS
= 10 V; V
DS
= 30 V
I
D
= 80 A; R
G
= 39
Ω
inductive load
with heat transfer paste (IXYS test setup)
IXYS reserves the right to change limits, test conditions and dimensions.
20081126f
© 2008 IXYS All rights reserved
1-6
GWM 120-0075P3
Source-Drain Diode
Symbol
Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min.
V
SD
t
rr
Q
RM
I
RM
(diode) I
F
= 60 A; V
GS
= 0 V
I
F
= 80 A; -di
F
/dt = 800 A/µs; V
R
= 30 V
typ.
0.9
70
1.1
30
max.
1.2
V
ns
µC
A
Equivalent Circuits for Simulation
Thermal Response
P
V
T
J
R
th1
C
th1
R
th2
C
th2
T
C
Component
Symbol
I
RMS
T
VJ
T
stg
V
ISOL
F
C
Symbol
R
pin to chip
I
ISOL
< 1 mA, 50/60 Hz, f = 1 minute
mounting force with clip
Conditions
with heatsink compound
coupling capacity between shorted
pins and mounting tab in the case
typ.
Conditions
per pin in main current paths (P+, N-, L1, L2, L3)
may be additionally limited by external connections
Maximum Ratings
300
-55...+175
-55...+125
1000
50 - 250
A
°C
°C
V~
N
junction - case (typ.)
C
th1
= 0.039 J/K; R
th1
= 0.28 K/W
C
th2
= 0.069 J/K; R
th2
= 0.57 K/W
Characteristic Values
min.
typ.
0.6
160
25
max.
mW
C
P
Weight
pF
g
IXYS reserves the right to change limits, test conditions and dimensions.
20081126f
© 2008 IXYS All rights reserved
2-6
GWM 120-0075P3
S
traight
L
eads
GWM 120-0075P3-SL
B
ent
L
eads
GWM 120-0075P3-BL
G1
S1
G2
S2
G3
S3
G4
S4
G5
S5
G6
S6
L+
L-
G1
S1
G2
L1
L+
S2
G3
L-
L2
S3
G4
L1
L3
S4
G5
S5
G6
L2
S
urface
M
ount
D
evice
S6
L3
GWM 120-0075P3-SMD
G1
S1
G2
S2
G3
S3
G4
S4
G5
S5
G6
S6
L+
L-
L1
L2
L3
Leads
Straight
SMD
Bent
Ordering
Standard
Standard
Standard
Part Name &
Packing Unit Marking
GWM 120-0075P3 - SL
GWM 120-0075P3 - SMD
GWM 120-0075P3 - BL
Part Marking
GWM 120-0075P3
GWM 120-0075P3
GWM 120-0075P3
Delivering Mode
Blister
Blister
Blister
Base Qty.
36
36
36
Ordering
Code
502 843
502 850
contact factory
IXYS reserves the right to change limits, test conditions and dimensions.
20081126f
© 2008 IXYS All rights reserved
3-6
GWM 120-0075P3
1.2
I
DSS
= 0.25 mA
250
V
DS
= 30 V
1.1
V
DSS
[V] Normalized
200
150
100
50
0
0.9
0.8
0.7
-25
I
D
- [A]
1.0
TJ = 125°C
TJ = 25°C
0
25
50
75
100
125
150
0
1
2
3
4
5
6
7
T
J
[°C]
Fig. 1 Drain source breakdown voltage V
DSS
vs. junction temperature T
VJ
300
250
200
300
7V
6.5 V
6V
T
J
= 25°C
V
GS
[V]
Fig. 2 Typical transfer characteristic
V
GS
=
20 V
15 V
10 V
250
200
V
GS
=
20 V
15 V
10 V
7V
6.5 V
6V
5.5 V
5V
4.5 V
4V
I
D
[A]
I
D
[A]
5.5 V
5V
150
100
4.5 V
150
100
50
50
4V
0
0
1
2
3
4
5
6
0
TJ = 125°C
0
1
2
V
DS
[V]
Fig. 3 Typical output characteristic
V
DS
[V]
3
4
5
6
Fig. 4 Typical output characteristic
2.5
V
GE
= 10 V
I
D
= 125 A
12.0
10.5
9.0
R
DS(on)
R
DS(on)
[mΩ]
3.0
2.5
R
DS(ON)
- Normalized
2.0
1.5
1.0
0.5
0.0
0
4V
4.5 V
5V
5.5 V
6V
2.0
R
DS(on)
normalized
6.5 V
7V
10 V
15 V
20 V
V
GS
= 10 V
I
D
= 125 A
TJ = 125°C
7.5
6.0
4.5
1.5
1.0
R
DS(on)
normalized
3.0
1.5
0.5
-25
0
25
50
75
100
125
150
0.0
50
100
T
J
[°C]
Fig. 5 Drain source on-state resistance R
DS(on)
versus junction temperature T
J
IXYS reserves the right to change limits, test conditions and dimensions.
I
D
[A]
150
200
250
300
Fig. 6 Drain source on-state
resistance R
DS(on)
versus I
D
20081126f
© 2008 IXYS All rights reserved
4-6
GWM 120-0075P3
14
12
10
I
D
= 125 A
T
J
= 25°C
160
140
120
V
GS
[V]
I
D
- [A]
120
8
6
4
2
0
V
DS
= 15 V
V
DS
= 55 V
100
80
60
40
20
0
20
40
60
80
100
0
0
25
50
75
100
125
150
175
Q
G
[nC]
Fig.7 Gate charge characteristic
T
J
[°C]
Fig. 8 Drain current I
D
vs. case temperature T
C
0.20
0.16
V
DS
= 30 V
V
GS
= +10/0 V
R
G
= 39
Ω
T
J
= 125°C
125
t
r
t
d(on)
0.8
0.7
800
700
600
100
75
50
25
E
on
, E
rec(off)
[mJ]
0.6
E
off
[mJ]
t [ns]
0.4
0.3
0.2
0.1
0.08
0.04
0.00
E
on
E
rec(off)
R
G
= 39
Ω
T
J
= 125°C
E
off
t
f
400
300
200
100
0
20
40
60
80
100
120
140
0
0.0
0
20
40
60
80
100
120
140
0
I
D
[A]
Fig. 9 Typ. turn-on energy & switching times
vs. collector current, inductive switching
I
D
[A]
Fig. 10 Typ. turn-off energy & switching times
vs. collector current, inductive switching
0.75
0.60
V
DS
= 30 V
V
GS
= +10/0 V
I
D
= 125 A
T
J
= 125°C
t
r
t
d(on)
250
200
1.6
1.4
1.2
E
on
, E
rec(off)
[mJ]
E
off
[mJ]
t [ns]
0.8
0.6
0.4
0.2
t
f
E
off
800
600
400
200
0.30
0.15
0.00
E
rec(off)
100
50
E
on
0
20
40
60
80
100
120
0
0.0
0
20
40
R
G
[Ω]
Fig. 11 Typ. turn-on energy & switching times
vs. gate resistor, inductive switching
Fig. 12
R
G
[Ω]
60
80
100
120
0
Typ. turn-off energy & switching times
vs. gate resistor, inductive switching
IXYS reserves the right to change limits, test conditions and dimensions.
20081126f
© 2008 IXYS All rights reserved
5-6
t [ns]
0.45
150
1.0
V
DS
= 30 V
V
GS
= +10/0 V
I
D
= 125 A
T
J
= 125°C
1600
1400
t
d(off)
1200
1000
t [ns]
0.12
0.5
V
DS
= 30 V
V
GS
= +10/0 V
t
d(off)
500
嵌入式系统
