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H11A3

LDO Voltage Regulators

器件类别:光电子/LED    光电   

厂商名称:Vishay(威世)

厂商官网:http://www.vishay.com

器件标准:

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
Vishay(威世)
包装说明
DIP-6
Reach Compliance Code
compliant
ECCN代码
EAR99
Coll-Emtr Bkdn Voltage-Min
30 V
配置
SINGLE
标称电流传输比
20%
最大暗电源
50 nA
最大正向电流
0.06 A
最大绝缘电压
5300 V
JESD-609代码
e3
元件数量
1
最高工作温度
100 °C
最低工作温度
-55 °C
光电设备类型
TRANSISTOR OUTPUT OPTOCOUPLER
端子面层
Matte Tin (Sn)
文档预览
End of Life January-2018 - Alternative Device: CNY17
H11A1, H11A2, H11A3, H11A4, H11A5
www.vishay.com
Vishay Semiconductors
Optocoupler, Phototransistor Output, with Base Connection
A
C
NC
1
2
3
6
5
4
B
C
E
FEATURES
• Interfaces with common logic families
• Input-output coupling capacitance < 0.5 pF
• Industry standard dual-in line 6-pin package
• Isolation rated voltage 4420 V
RMS
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
i179004-3
DESCRIPTION
The H11Ax family is an industry standard single channel
phototransistor coupler. It includes the H11A1, H11A2,
H11A3, H11A4, H11A5 couplers.
Each optocoupler consists of gallium arsenide infrared LED
and a silicon NPN phototransistor.
The isolation performance is accomplished through Vishay
double molding isolation manufacturing process.
Compliance to DIN EN 60747-5-5 partial discharge isolation
specification is available is by ordering option 1.
These isolation processes and the Vishay ISO9001 quality
program results in the highest isolation performance
available for a commercial plastic phototransistor
optocoupler.
The devices are available in lead formed configuration
suitable for surface mounting and are available either on
tape and reel, or in standard tube shipping containers.
Note
• Designing with data sheet is covered in Application Note 45.
APPLICATIONS
• AC mains detection
• Reed relay driving
• Switch mode power supply feedback
• Telephone ring detection
• Logic ground isolation
• Logic coupling with high frequency noise rejection
AGENCY APPROVALS
• UL1577, file no. E52744, double protection
• cUL tested to CSA 22.2 bulletin 5A
• CSA 93751
• BSI EN 60950, BSI EN 60065
• DIN EN 60747-5-5 (VDE 0884-5), available with option 1
• FIMKO
• CQC: GB 8898-2011, GB 4943.1-2011
ORDERING INFORMATION
H
1
1
PART NUMBER
A
#
-
X
0
0
#
X
TAPE
AND
REEL
DIP
Option 6
PACKAGE OPTION
7.62 mm
Option 7
10.16 mm
Option 9
> 0.7 mm
> 0.1 mm
AGENCY CERTIFIED/PACKAGE
UL, CSA, BSI, FIMKO, CQC
DIP-6
DIP-6, 400 mil, option 6
SMD-6, option 7
SMD-6, option 9
> 50
H11A1,
H11A1-X001
H11A1-X006
H11A1-X007,
H11A1-X017
H11A1-X009,
H11A1-X009T
H11A2
-
-
-
> 20
CTR (%)
> 10
H11A3
-
-
-
H11A4
-
-
-
> 30
H11A5
-
-
-
Note
• Additional options may be possible, please contact sales office.
Rev. 1.7, 23-Jul-15
Document Number: 83730
1
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
End of Life January-2018 - Alternative Device: CNY17
H11A1, H11A2, H11A3, H11A4, H11A5
www.vishay.com
Vishay Semiconductors
TEST CONDITION
SYMBOL
V
R
I
F
t
10 μs
I
FSM
P
diss
V
CEO
V
EBO
I
C
t < 1 ms
I
C
P
diss
T
stg
T
amb
T
j
Max. 10 s, dip soldering: distance
to seating plane
1.5 mm
T
sld
VALUE
6
60
2.5
100
70
7
50
100
150
-55 to +150
-55 to +100
100
260
UNIT
V
mA
A
mW
V
V
mA
mA
mW
°C
°C
°C
°C
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
INPUT
Reverse voltage
Forward current
Surge current
Power dissipation
OUTPUT
Collector emitter breakdown voltage
Emitter base breakdown voltage
Collector current
Power dissipation
COUPLER
Storage temperature range
Operating temperature range
Junction temperature
Soldering temperature
Note
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
INPUT
H11A1
H11A2
Forward voltage
I
F
= 10 mA
H11A3
H11A4
H11A5
Reverse current
Capacitance
OUTPUT
Collector emitter breakdown voltage
Emitter collector breakdown voltage
Collector base breakdown voltage
Collector emitter leakage current
Emitter collector capacitance
COUPLER
Collector emitter, saturation voltage
Capacitance (input-output)
I
CE
= 0.5 mA, I
F
= 10 mA
V
CEsat
C
IO
0.5
0.4
V
pF
I
C
= 1 mA, I
F
= 0 mA
I
E
= 100 μA, I
F
= 0 mA
I
C
= 10 μA, I
F
= 0 mA
V
CE
= 10 V, I
F
= 0 mA
V
CE
= 0 V
BV
CEO
BV
ECO
BV
CBO
I
CEO
C
CE
30
7
70
5
6
50
V
V
V
nA
pF
V
R
= 3 V
V
R
= 0 V, f = 1 MHz
V
F
V
F
V
F
V
F
V
F
I
R
C
O
50
1.1
1.1
1.1
1.1
1.1
1.5
1.5
1.5
1.5
1.7
10
V
V
V
V
V
μA
pF
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
Note
• Minimum and maximum values were tested requirements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
CURRENT TRANSFER RATIO
PARAMETER
TEST CONDITION
PART
H11A1
H11A2
I
C
/I
F
V
CE
= 10 V, I
F
= 10 mA
H11A3
H11A4
H11A5
Rev. 1.7, 23-Jul-15
SYMBOL
CTR
DC
CTR
DC
CTR
DC
CTR
DC
CTR
DC
MIN.
50
20
20
10
30
TYP.
MAX.
UNIT
%
%
%
%
%
Document Number: 83730
2
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
End of Life January-2018 - Alternative Device: CNY17
H11A1, H11A2, H11A3, H11A4, H11A5
www.vishay.com
Vishay Semiconductors
SWITCHING CHARACTERISTICS
PARAMETER
Turn-on time
Turn-off time
TEST CONDITION
I
C
= 2 mA, R
L
= 100
Ω,
V
CE
= 10 V
SYMBOL
t
on
t
off
MIN.
TYP.
3
3
MAX.
UNIT
μs
μs
SAFETY AND INSULATION RATINGS
PARAMETER
Climatic classification
Comparative tracking index
Maximum rated withstanding isolation voltage
Maximum transient isolation voltage
Maximum repetitive peak isolation voltage
Isolation resistance
Output safety power
Input safety current
Safety temperature
Creepage distance
Clearance distance
Insulation thickness
DTI
V
IO
= 500 V, T
amb
= 25 °C
V
IO
= 500 V, T
amb
= 100 °C
t = 1 min
TEST CONDITION
According to IEC 68 part 1
CTI
V
ISO
V
IOTM
V
IORM
R
IO
R
IO
P
SO
I
SI
T
S
SYMBOL
VALUE
55/100/21
175
4420
10 000
890
10
12
10
11
400
275
175
7
7
0.4
V
RMS
V
peak
V
peak
Ω
Ω
mW
mA
°C
mm
mm
mm
UNIT
Note
• As per IEC 60747-5-5, § 7.4.3.8.2, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with
the safety ratings shall be ensured by means of protective circuits.
TYPICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
1.4
1.5
V
F
-Forward Voltage (V)
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.1
1
T
A
= - 55 °C
T
A
= 25 °C
NCTR - Normalized CTR
Normalized to:
V
CE
= 10 V, I
F
= 10 mA, T
A
= 25 °C
CTR
CE(sat)
= 0.4 V
T
A
= 25 °C
1.0
0.5
NCTR(SAT)
NCTR
0.0
T
A
= 85 °C
10
100
i4n25_02
0
1
10
100
i4n25_01
I
F
- Forward Current (mA)
I
F
- LED Current (mA)
Fig. 1 - Forward Voltage vs. Forward Current
Fig. 2 - Normalized Non-Saturated and Saturated CTR vs.
LED Current
Rev. 1.7, 23-Jul-15
Document Number: 83730
3
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
End of Life January-2018 - Alternative Device: CNY17
H11A1, H11A2, H11A3, H11A4, H11A5
www.vishay.com
Vishay Semiconductors
1.5
I
CE
- Collector Current (mA)
N
CTR
- Normalized CTR
Normalized to:
V
CE
= 10 V, I
F
= 10 mA, T
A
= 25 °C
CTR
CE(sat)
V
CE
= 0.4 V
1.0
T
A
= 50 °C
35
30
25
20
15
25 °C
10
5
0
85 °C
70 °C
50 °C
0.5
NCTR(SAT)
NCTR
0.0
0.1
1
10
100
0
i4n25_06
10
20
30
40
50
60
i4n25_03
I
F
- LED Current (mA)
I
F
- LED Current (mA)
Fig. 3 - Normalized Non-Saturated and Saturated CTR vs.
LED Current
Fig. 6 - Collector Emitter Current vs.
Temperature and LED Current
1.5
I
CEO
- Collector Emitter (nA)
NCTR - Normalized CTR
Normalized to:
V
CE
= 10 V, I
F
= 10 mA, T
A
= 25 °C
CTR
CE(sat)
V
CE
= 0.4 V
1.0
T
A
= 70 °C
10
5
10
4
10
3
10
2
V
CE
= 10 V
10
1
0.5
NCTR(SAT)
NCTR
0.0
0.1
i4n25_04
10
0
10
- 1
10
- 2
-20
0
20
Typical
1
10
100
40
60
80
100
I
F
- LED Current (mA)
i4n25_07
T
amb
- Ambient Temperature (°C)
Fig. 4 - Normalized Non-Saturated and Saturated CTR vs.
LED Current
Fig. 7 - Collector Emitter Leakage Current vs. Temperature
1.5
1.5
NCTR
cb
- Normalized CTR
cb
NCTR - Normalized CTR
Normalized to:
V
CE
= 10 V, I
F
= 10 mA, T
A
= 25 °C
CTR
CE(sat)
V
CE
= 0.4 V
1.0
T
A
= 85 °C
Normalized to:
V
CB
= 9.3 V, I
F
= 10 mA, T
A
= 25 °C
1.0
0.5
NCTR(SAT)
NCTR
0.0
0.1
1
10
100
0.5
25 °C
50 °C
70 °C
0.0
0.1
1
10
100
i4n25_05
I
F
- LED Current (mA)
i4n25_08
I
F
- LED Current (mA)
Fig. 5 - Normalized Non-Saturated and Saturated CTR vs.
LED Current
Fig. 8 - Normalized CTR
cb
vs. LED Current and Temperature
Rev. 1.7, 23-Jul-15
Document Number: 83730
4
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
End of Life January-2018 - Alternative Device: CNY17
H11A1, H11A2, H11A3, H11A4, H11A5
www.vishay.com
Vishay Semiconductors
10
Normalized Photocurrent
t
PLH
- Propagation Delay (µs)
1
t
PHL
100
2.0
0.
1
Nib, T
A
= - 20 °C
Nib, T
A
= 20 °C
Nib, T
A
= 50 °C
Nib, T
A
= 70 °C
0.01
0.1
1
10
100
10
t
PLH
1.5
1
0.1
i4n25_12
i4n25_09
I
F
- LED Current (mA)
1
10
1.0
100
R
L
- Collector Load Resistor (kΩ)
Fig. 9 - Normalized Photocurrent vs. I
F
and Temperature
Fig. 12 - Propagation Delay vs. Collector Load Resistor
1.2
70 °C
I
F
Nh
FE
- Normalized h
FE
1.0
25 °C
- 20 °C
0.8
Normalized to:
I
B
= 20 µA, V
CE
= 10 V,
T
A
= 25 °C
t
D
V
O
t
R
t
PLH
V
TH
= 1.5 V
t
PHL
t
S
t
F
0.6
0.4
1
i4n25_10
10
100
1000
i4n25_13
I
b
- Base Current (µA)
Fig. 10 - Normalized Non-Saturated h
FE
vs.
Base Current and Temperature
Fig. 13 - Switching Timing
Nh
FE(sat)
- Normalized Saturated h
FE
1.5
Normalized to:
V
CE
= 10 V, I
b
= 20 µA
T
A
= 25 °C
f = 10 kHz
DF = 50 %
V
CC
= 5 V
70 °C 50 °C
1.0
25 °C
- 20 °C
0.5
V
CE
= 0.4 V
0.0
1
i4n25_11
R
L
V
O
I
F
= 10 mA
10
100
1000
I
b
- Base Current (µA)
i4n25_14
Fig. 11 - Normalized HFE vs. Base Current and Temperature
Fig. 14 - Switching Schematic
Rev. 1.7, 23-Jul-15
Document Number: 83730
5
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
t
PHL
- Propagation Delay (µs)
Normalized to:
I
F
= 10 mA, T
A
= 25 °C
1000
I
F
= 10 mA, T
A
= 25 °C
V
CC
= 5.0 V, V
th
= 1.5 V
2.5
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参数对比
与H11A3相近的元器件有:H11A1-X007、H11A1。描述及对比如下:
型号 H11A3 H11A1-X007 H11A1
描述 LDO Voltage Regulators JFET N-Chan JFET
是否无铅 不含铅 不含铅 不含铅
是否Rohs认证 符合 符合 符合
厂商名称 Vishay(威世) Vishay(威世) Vishay(威世)
包装说明 DIP-6 DIP-6 DIP-6
Reach Compliance Code compliant unknown compliant
ECCN代码 EAR99 EAR99 EAR99
Coll-Emtr Bkdn Voltage-Min 30 V 30 V 30 V
配置 SINGLE SINGLE SINGLE
标称电流传输比 20% 50% 50%
最大暗电源 50 nA 50 nA 50 nA
最大正向电流 0.06 A 0.06 A 0.06 A
最大绝缘电压 5300 V 5300 V 5300 V
元件数量 1 1 1
最高工作温度 100 °C 100 °C 100 °C
最低工作温度 -55 °C -55 °C -55 °C
光电设备类型 TRANSISTOR OUTPUT OPTOCOUPLER TRANSISTOR OUTPUT OPTOCOUPLER TRANSISTOR OUTPUT OPTOCOUPLER
JESD-609代码 e3 - e3
端子面层 Matte Tin (Sn) - Matte Tin (Sn)
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