H11AA1M, H11AA2M, H11AA3M, H11AA4M — AC Input/Phototransistor Optocouplers
September 2009
H11AA1M, H11AA2M, H11AA3M, H11AA4M
AC Input/Phototransistor Optocouplers
Features
■
Bi-polar emitter input
■
Built-in reverse polarity input protection
■
Underwriters Laboratory (UL) recognized File
Description
The H11AAXM series consists of two gallium-arsenide
infrared emitting diodes connected in inverse parallel
driving a single silicon phototransistor output.
#E90700, Volume 2
■
VDE approved File #102497 (ordering option ‘V’)
Applications
■
AC line monitor
■
Unknown polarity DC sensor
■
Telephone line interface
Schematic
Package Outlines
1
6 BASE
2
5 COLL
3
4 EMITTER
©2006 Fairchild Semiconductor Corporation
H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3
www.fairchildsemi.com
H11AA1M, H11AA2M, H11AA3M, H11AA4M — AC Input/Phototransistor Optocouplers
Absolute Maximum Ratings
(T
A
=25°C Unless otherwise specified)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
TOTAL DEVICE
T
STG
T
OPR
T
SOL
P
D
EMITTER
I
F
I
F
(pk)
P
D
DETECTOR
I
C
P
D
Parameter
Storage Temperature
Operating Temperature
Lead Solder Temperature
Total Device Power Dissipation
Derate Linearly From 25°C
Continuous Forward Current
Forward Current – Peak (1µs pulse, 300 pps)
LED Power Dissipation
Derate Linearly From 25°C
Continuous Collector Current
Detector Power Dissipation
Derate linearity from 25°C
Device
All
All
All
All
Value
-40 to +150
-40 to +100
260 for 10 sec
250
2.94
Units
°C
°C
°C
mW
mW/°C
mA
A
mW
mW/°C
mA
mW
mW/°C
All
All
All
60
±1.0
120
1.41
All
All
50
150
1.76
©2006 Fairchild Semiconductor Corporation
H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3
www.fairchildsemi.com
2
H11AA1M, H11AA2M, H11AA3M, H11AA4M — AC Input/Phototransistor Optocouplers
Electrical Characteristics
(T
A
= 25°C Unless otherwise specified.)
Individual Component Characteristics
Symbol
EMITTER
V
F
C
J
BV
CEO
BV
CBO
BV
EBO
BV
ECO
I
CEO
Input Forward Voltage
Capacitance
Breakdown Voltage
Collector to Emitter
Collector to Base
Emitter to Base
Emitter to Collector
Leakage Current
Collector to Emitter
I
F
= ±10mA
V
F
= 0 V, f = 1.0MHz
I
C
= 1.0mA, I
F
= 0
I
C
= 100µA, I
F
= 0
I
E
= 100µA, I
F
= 0
I
E
= 100µA, I
F
= 0
V
CE
= 10 V, I
F
= 0
All
All
All
All
All
All
H11AA1M
H11AA3M
H11AA4M
H11AA2M
C
CE
C
CB
C
EB
Capacitance Collector
to Emitter
Collector to Base
Emitter to Base
V
CE
= 0, f = 1MHz
V
CB
= 0, f = 1MHz
V
EB
= 0, f = 1MHz
All
All
All
30
70
5
7
1.17
80
100
120
10
10
1
50
1.5
V
pF
V
V
V
V
nA
Parameter
Test Conditions
Device
Min.
Typ.*
Max.
Unit
DETECTOR
1
10
80
15
200
pF
pF
pF
*Typical values at T
A
= 25°C
Transfer Characteristics
Symbol
CTR
CE
Characteristics
Current Transfer Ratio,
Collector to Emitter
Test Conditions
I
F
= ±10mA, V
CE
= 10V
Device
H11AA4M
H11AA3M
H11AA1M
H11AA2M
Min.
100
50
20
10
.33
Typ.*
Max.
Units
%
Current Transfer Ratio,
Symmetry
V
CE(SAT)
Saturation Voltage,
Collector to Emitter
I
F
= ±10mA, V
CE
= 10V
(Figure 11)
I
F
= ±10mA, I
CE
= 0.5mA
All
All
3.0
.40
V
Isolation Characteristics
Symbol
C
I-O
V
ISO
R
ISO
Characteristic
Package Capacitance
Input/Output
Isolation Voltage
Isolation Resistance
Test Conditions
V
I-O
= 0, f = 1MHz
f = 60Hz, t = 1 sec.
V
I-O
= 500 VDC
Min.
Typ.*
0.7
Max.
Units
pF
Vac(pk)
Ω
7500
10
11
*Typical values at T
A
= 25°C
©2006 Fairchild Semiconductor Corporation
H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3
www.fairchildsemi.com
3
H11AA1M, H11AA2M, H11AA3M, H11AA4M — AC Input/Phototransistor Optocouplers
Safety and Insulation Ratings
As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data.
Compliance with the safety ratings shall be ensured by means of protective circuits.
Symbol
Parameter
Installation Classifications per DIN VDE 0110/1.89
Table 1
For Rated Main Voltage < 150Vrms
For Rated Main voltage < 300Vrms
Climatic Classification
Pollution Degree (DIN VDE 0110/1.89)
Min.
Typ.
Max.
Unit
I-IV
I-IV
55/100/21
2
175
1594
V
peak
CTI
V
PR
Comparative Tracking Index
Input to Output Test Voltage, Method b,
V
IORM
x 1.875 = V
PR
, 100% Production Test
with tm = 1 sec, Partial Discharge < 5pC
Input to Output Test Voltage, Method a,
V
IORM
x 1.5 = V
PR
, Type and Sample Test
with tm = 60 sec, Partial Discharge < 5pC
1275
V
peak
V
IORM
V
IOTM
Max. Working Insulation Voltage
Highest Allowable Over Voltage
External Creepage
External Clearance
Insulation Thickness
850
6000
7
7
0.5
10
9
V
peak
V
peak
mm
mm
mm
Ω
RIO
Insulation Resistance at Ts, V
IO
= 500V
©2006 Fairchild Semiconductor Corporation
H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3
www.fairchildsemi.com
4
H11AA1M, H11AA2M, H11AA3M, H11AA4M — AC Input/Phototransistor Optocouplers
Typical Performance Characteristics
Fig. 1 Input Voltage vs. Input Current
100
T
A
= 25°C
80
1.2
1.4
T
A
= 25°C
V
CE
= 5V
Normalized to I
F
= 10mA
Fig. 2 Normalized CTR vs. Forward Current
I
F
– INPUT CURRENT (mA)
60
40
20
0
-20
-40
-60
0.2
1.0
NORMALIZED CTR
0.8
0.6
0.4
-80
-100
-2.0
0.0
-1.5
-1.0
-0.5
0.0
0.5
1.0
1.5
2.0
0
5
10
15
20
V
F
– INPUT VOLTAGE (V)
I
F
– FORWARD CURRENT (mA)
Fig. 3 Normalized CTR vs. Ambient Temperature
1.4
V
CE
= 5V
Normalized to I
F
= 10mA, T
A
= 25°C
1.2
I
F
= 10mA
Fig. 4 CTR vs. RBE (Unsaturated)
1.0
NORMALIZED CTR ( CTR
RBE
/ CTR
RBE(OPEN)
)
V
0.9
0.8
0.7
CE
= 5V
T
A
= 25°C
NORMALIZED CTR
1.0
I
F
= 5mA
0.8
I
F
= 20mA
0.6
I
F
= 20mA
0.6
I
F
= 10mA
0.5
I
F
= 5mA
0.4
0.3
0.2
0.1
0.0
10
100
1000
0.4
0.2
-60
-40
-20
0
20
40
60
80
100
T
A
– AMBIENT TEMPERATURE (°C)
R
BE
– BASE RESISTANCE (kΩ)
Fig. 5 CTR vs. RBE (Saturated)
1.0
Fig. 6 Collector-Emitter Saturation Voltage vs Collector Current
V
CE (SAT)
– COLLECTOR-EMITTER SATURATION VOLTAGE (V)
100
T = 25°C
A
NORMALIZED CTR ( CTR
RBE
/ CTR
RBE(OPEN)
)
V
0.9
0.8
0.7
CE
= 0.3V
T
A
= 25°C
10
I
F
= 20mA
0.6
I
F
= 10mA
0.5
0.4
0.3
0.2
0.1
0.0
10
100
1000
I
F
= 5mA
1
I
F
= 2.5mA
I
F
= 5mA
0.1
0.01
I
F
= 10mA
I
F
= 20mA
R
BE
- BASE RESISTANCE (k
Ω)
0.001
0.01
0.1
1
10
I
C
- COLLECTOR CURRENT (mA)
©2006 Fairchild Semiconductor Corporation
H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3
www.fairchildsemi.com
5
