H11C4/H11C5/H11C6
PHOTO SCR OPTOCOUPLER
FEATURES
• Turn On Current (IFT), 5.0 mA Typical
• Gate Trigger Current (IGT), 20 mA Typical
• Surge Anode Current, 5.0 A
• Blocking Voltage, 400 V Gate Trigger Voltage
(VGT), 0.6 V Typical
• Isolation Voltage, 5300 VACRMS
• Solid State Reliability
• Standard DIP Package
• Underwriters Lab File #E52744
DESCRIPTION
The H11C4/H11C5/H11C6 are optically coupled
SCRs with a Gallium Arsenide infrared emitter and
a silicon photo SCR sensor. Switching can be
achieved while maintaining a high degree of isola-
tion between triggering and load circuits. These
optocouplers can be used in SCR triac and solid
state relay applications where high blocking volt-
ages and low input current sensitivity are required.
The H11C4 and H11C5 has a maximum turn-on-
current of 11 mA. The H11C6 has a maximum of
14 mA.
Maximum Ratings
Emitter
Peak Reverse Voltage .................................... 6.0 V
Continuous Forward Current......................... 60 mA
Peak Forward Current
(1 ms, 1% Duty Cycle) ................................ 3.0 A
Power Dissipation at 25
°
C ......................... 100 mW
Derate Linearly from 25
°
C ................... 1.33 mW/
°
C
Detector
Reverse Gate Voltage..................................... 6.0 V
Anode Voltage (DC or AC Peak) ................... 400 V
RMS Forward Current ................................. 300 mA
Surge Anode Current (10 ms duration) .......... 5.0 A
Peak Forward Current
(100
µ
s, 1% Duty Cycle) .............................. 10 A
Surge Gate Current (5 ms duration) ........... 200 mA
Power Dissipation, 25
°
C case ................ 1000 mW
Derate Linearly from 25
°
C ................... 13.3 mW/
°
C
Package
Isolation Test Voltage ....................... 5300 VACRMS
Between Emitter and Detector
Referred to Standard Climate
23
°
C/50%RH, DIN 50014
Creepage.................................................min.7 mm
Clearance ...............................................min. 7 mm
Comparative Tracking Index per
DIN IEC 112/VDE 0303, part 1...................... 175
Isolation Resistance
VIO=500 V, TA=25
°
C..............................
≥
1012
Ω
VIO=500 V, TA=100
°
C............................
≥
1011
Ω
Total Package Dissipation ......................... 400 mW
Derate Linearly from 25
°
C ..................... 5.3 mW/
°
C
Operating Temperature Range .... –55
°
C to +100
°
C
Storage Temperature Range ....... –55
°
C to +150
°
C
Lead Soldering Time at 260
°
C ....................10 sec.
Package Dimensions in Inches (mm)
Pin One ID.
3
.248 (6.30)
.256 (6.50)
4
5
6
2
1
Anode 1
Cathode 2
NC 3
6 Gate
5 Anode
4 Cathode
.335 (8.50)
.343 (8.70)
.039
(1.00)
min.
4°
typ.
.018 (0.45)
.022 (0.55)
.300 (7.62)
typ.
.130 (3.30)
.150 (3.81)
18° typ.
.020 (.051) min.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
.010 (.25)
.014 (.35)
.300 (7.62)
.347 (8.82)
.110 (2.79)
.150 (3.81)
Characteristics
(T
A
=25
°
C)
Emitter
Forward Voltage
Reverse Current
Capacitance
Detector
Forward Blocking
Voltage
Reverse Blocking
Voltage
On-state Voltage
Holding Current
Gate Trigger
Voltage
Forward Leakage
Current
Sym Min. Typ. Max. Unit
V
F
I
R
C
O
V
DM
400
V
DM
400
Vt
I
H
Condition
I
F
=10 mA
V
R
=3 V
V
R
=0, f=1 MHz
R
GK
=10 K
Ω
T
A
=100
°
C
Id=150
µ
A
1.2
50
1.5
10
V
µ
A
pF
V
V
1.1
1.3
500
1.0
V
µ
A
V
µ
A
V
GT
I
R
0.6
150
Reverse Leakage
Current
I
R
150
µ
A
Gate Trigger Current I
GT
Capacitance
Anode to Gate
Gate to Cathode
Package
Turn-0n Current
H11C4/H11C5
H11C6
Turn-0n Current
H11C4/H11C5
H11C6
20
50
µ
A
I
T
=300 mA
R
GK
=27 K
Ω
V
FX
=50 V
V
FX
=100 V
R
GK
=27 K
Ω
R
L
=10 K
Ω
R
GK
=10 K
Ω
V
RM
=400 V
I
F
=0,
T
A
=100
°
C
R
GK
=10 K
Ω
V
RX
=400 V
I
F
=0,
T
A
=100
°
C
V
FX
=100 V
R
GK
=27 K
Ω
,
R
L
=10 K
Ω
V=0, f=1 MHz
20
350
I
FT
I
FT
pF
pF
20
30
5
7
11
14
mA
mA
mA
mA
V
DM
=50 V
R
GK
=10 K
Ω
V
DM
=100 V
R
GK
=27 K
Ω
5–55
RF/无线
