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H11F1M, H11F2M, H11F3M — Photo FET Optocouplers
May 2012
H11F1M, H11F2M, H11F3M
Photo FET Optocouplers
Features
As a remote variable resistor:
■
≤
100
Ω
to
≥
300M
Ω
■
≤
15pF shunt capacitance
■
≥
100G
Ω
I/O isolation resistance
As an analog switch:
■
Extremely low offset voltage
■
60 V
pk-pk
signal capability
■
No charge injection or latch-up
■
UL recognized (File #E90700)
General Description
The H11FXM series consists of a Gallium-Aluminum-
Arsenide IRED emitting diode coupled to a symmetrical
bilateral silicon photo-detector. The detector is electri-
cally isolated from the input and performs like an ideal
isolated FET designed for distortion-free control of low
GaN Systems和安森美半导体宣布，采用GaN Systems的650 V，30 A GaN E-HEMT和安森美半导体的NCP51820高速栅极驱动器，共同组成了一套高速半桥GaN系统评估板。该套件采用25mm x 25mm的布局，减少了元件数量。 其特性包括1+ MHz工作频率和200 V / ns CMTI额定值。基于GaN的电源系统的优势包括功率损耗，重量，尺寸（最多80％）和系...[详细]
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