H11N1M, H11N2M, H11N3M — 6-Pin DIP High Speed Logic Optocouplers
September 2009
H11N1M, H11N2M, H11N3M
6-Pin DIP High Speed Logic Optocouplers
Features
■
High data rate, 5MHz typical (NRZ)
■
Free from latch up and oscilliation throughout voltage
■
■
■
■
■
■
■
■
Description
The H11NXM series has a high speed integrated circuit
detector optically coupled to an AlGaAs infrared emitting
diode. The output incorporates a Schmitt trigger, which
provides hysteresis for noise immunity and pulse shap-
ing. The detector circuit is optimized for simplicity of
operation and utilizes an open collector output for
maximum application flexibility.
and temperature ranges.
Microprocessor compatible drive
Logic compatible output sinks 16mA at 0.5V
maximum
Guaranteed on/off threshold hysteresis
Wide supply voltage capability, compatible with all
popular logic systems
High common mode transient immunity, 2000V/µs
minimum
Fast switching t
r
= 7.5ns typical, t
f
= 12ns typical
Underwriter Laboratory (UL) recognized—
file #E90700
VDE recognized—File#102497 – Add option V
(e.g., H11N1VM)
Applications
■
Logic to logic isolator
■
Programmable current level sensor
■
Line receiver—eliminate noise and transient problems
■
A.C. to TTL conversion—square wave shaping
■
Interfaces computers with peripherals
■
Isolated power MOS driver for power supplies
Schematic
Package Outlines
ANODE 1
6 V
CC
CATHODE 2
5 GND
Truth Table
3
4 V
O
Input
H
L
Output
L
H
©2005 Fairchild Semiconductor Corporation
H11N1M, H11N2M, H11N3M Rev. 1.0.2
www.fairchildsemi.com
H11N1M, H11N2M, H11N3M — 6-Pin DIP High Speed Logic Optocouplers
Absolute Maximum Ratings
(T
A
= 25°C unless otherwise specified.)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
TOTAL DEVICE
T
STG
T
OPR
T
SOL
P
D
EMITTER
I
F
V
R
I
F
(pk)
P
D
DETECTOR
P
D
V
O
V
CC
I
O
Storage Temperature
Operating Temperature
Parameters
Value
-40 to +150
-40 to +85
260 for 10 sec
250
2.94
30
6
1.0
120
1.41
150
1.76
0 to 16
0 to 16
50
Units
°C
°C
°C
mW
mW/°C
mA
V
A
mW
mW/°C
mW
mW/°C
V
V
mA
Lead Solder Temperature
Total Device Power Dissipation @ 25°C
Derate Above 25°C
Continuous Forward Current
Reverse Voltage
Forward Current – Peak (1µs pulse, 300 pps)
LED Power Dissipation 25°C Ambient
Derate Linearly From 25°C
Detector Power Dissipation @ 25°C
Derate Linearly from 25°C
V
45
Allowed Range
V
65
Allowed Range
I
4
Output Current
©2005 Fairchild Semiconductor Corporation
H11N1M, H11N2M, H11N3M Rev. 1.0.2
www.fairchildsemi.com
2
H11N1M, H11N2M, H11N3M — 6-Pin DIP High Speed Logic Optocouplers
Electrical Characteristics
(T
A
= 25°C unless otherwise specified.)
Individual Component Characteristics
Symbol
EMITTER
V
F
I
R
C
J
V
CC
I
CC(off)
I
OH
Input Forward Voltage
Reverse Current
Capacitance
Operating Voltage Range
Supply Current
Output Current, High
I
F
= 0, V
CC
= 5V
I
F
= 0.3mA, V
CC
= V
O
= 15V
I
F
= 10mA
I
F
= 0.3mA
V
R
= 5V
V = 0, f = 1.0MHz
All
All
All
All
All
4
6
All
0.75
1.4
1.25
10
100
15
10
100
µA
pF
V
mA
µA
2
V
Parameters
Test Conditions
Device
Min.
Typ.*
Max.
Units
DETECTOR
Transfer Characteristics
Symbol
I
CC(on)
V
OL
I
F(on)
DC Characteristics
Supply Current
Output Voltage, Low
Test Conditions
I
F
= 10mA, V
CC
= 5V
R
L
=270
Ω
,V
CC
=5V,
I
F
= I
F(on)
max.
Device
All
All
H11N1M
H11N2M
H11N3M
Min.
Typ.*
6.5
Max.
10
0.5
Units
mA
V
mA
Turn-On Threshold Current R
L
=270
Ω
, V
CC
= 5V
(1)
0.8
2.3
4.1
0.3
0.65
3.2
5
10
I
F(off)
Turn-Off Threshold Current R
L
= 270
Ω
, V
CC
= 5V
R
L
= 270
Ω
, V
CC
= 5V
All
All
mA
0.95
I
F(off)
/ I
F(on)
Hysteresis Ratio
Switching Speed
Symbol
t
PHL
t
r
t
PLH
t
f
AC Characteristics
Propagation Delay Time
HIGH-to-LOW
Rise Time
Propagation Delay Time
LOW-to-HIGH
Fall Time
Data Rate
Test Conditions
C = 120pF, t
P
= 1µs,
R
E
=
(2)
, Figure 1
C = 120pF, t
P
= 1µs,
R
E
=
(2)
, Figure 1
C = 120pF, t
P
= 1µs,
R
E
=
(2)
, Figure 1
C = 120pF, t
P
= 1µs,
R
E
=
(2)
, Figure 1
Device
All
All
All
All
All
Min.
Typ.*
100
7.5
150
12
5
Max.
330
Units
ns
ns
330
ns
ns
MHz
Isolation Characteristics
Symbol
V
ISO
C
ISO
R
ISO
Parameters
Isolation Capacitance
Isolation Resistance
Test Conditions
V
I-O
= 0V, f = 1 MHz
V
I-O
= ±500 VDC
Min.
7500
Typ.*
0.4
Max.
0.6
Units
V
PEAK
pF
Ω
Input-Output Isolation Voltage f = 60 Hz, t =1 sec.
10
11
*Typical values at T
A
= 25°C
Notes:
1. Maximum I
F(ON)
is the maximum current required to trigger the output. For example, a 3.2mA maximum trigger current
would require the LED to be driven at a current greater than 3.2mA to guarantee the device will turn on. A 10% guard band
is recommended to account for degradation of the LED over its lifetime. The maximum allowable LED drive current is 30mA.
2. H11N1: R
E
= 910
Ω
, H11N2: R
E
= 560
Ω
, H11N3: R
E
= 240
Ω
©2005 Fairchild Semiconductor Corporation
H11N1M, H11N2M, H11N3M Rev. 1.0.2
www.fairchildsemi.com
3
H11N1M, H11N2M, H11N3M — 6-Pin DIP High Speed Logic Optocouplers
Safety and Insulation Ratings
As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data.
Compliance with the safety ratings shall be ensured by means of protective circuits.
Symbol
Parameter
Installation Classifications per DIN VDE 0110/1.89
Table 1
For Rated Main Voltage < 150Vrms
For Rated Main voltage < 300Vrms
Climatic Classification
Pollution Degree (DIN VDE 0110/1.89)
Min.
Typ.
Max.
Unit
I-IV
I-IV
55/100/21
2
175
1594
V
peak
CTI
V
PR
Comparative Tracking Index
Input to Output Test Voltage, Method b,
V
IORM
x 1.875 = V
PR
, 100% Production Test
with tm = 1 sec, Partial Discharge < 5pC
Input to Output Test Voltage, Method a,
V
IORM
x 1.5 = V
PR
, Type and Sample Test
with tm = 60 sec, Partial Discharge < 5pC
1275
V
peak
V
IORM
V
IOTM
Max. Working Insulation Voltage
Highest Allowable Over Voltage
External Creepage
External Clearance
Insulation Thickness
850
6000
7
7
0.5
10
9
V
peak
V
peak
mm
mm
mm
Ω
RIO
Insulation Resistance at Ts, V
IO
= 500V
©2005 Fairchild Semiconductor Corporation
H11N1M, H11N2M, H11N3M Rev. 1.0.2
www.fairchildsemi.com
4
H11N1M, H11N2M, H11N3M — 6-Pin DIP High Speed Logic Optocouplers
Typical Performance Curves
C
I
F
R
E
V
IN
1 H11N1-M
6
4
0.1µF
R
L
I
6
5V
V
IN
5V
50%
270Ω
V
O
0
t
on
t
off
10%
t
r
= t
f
≤
0.01µS
Z = 50Ω
2
5
V
O
90%
t
f
t
r
Figure 1. Switching Test Circuit and Waveforms
Figure 2. Transfer Characteristics
I
F
- NORMALIZED THRESHOLD CURRENT
6
V
OH
V
CC
= 5V
R
L
= 270Ω
T
A
= 25°C
Figure 3. Threshold Current vs. Supply Voltage
1.4
1.2
1.0
0.8
TURN OFF THRESHOLD
TURN ON THRESHOLD
5
V
O
- OUTPUT VOLTAGE (V)
4
3
I
F(OFF)
2
Hysteresis area
shaded for illustration
1
V
OL
0
0
1
2
3
4
I
F(ON)
0.6
0.4
0.2
0.0
0
2
4
6
8
10
12
14
16
VCC – SUPPLY VOLTAGE (V)
NORMALIZED TO:
:
TURN ON THRESHOLD AT
V
CC
= 5V, T
A
= 25°C
I
F
– INPUT CURRENT (mA)
Figure 4. Threshold Current vs. Temperature
1.2
I
F(On)
Figure 5. Load Current vs. Output Voltage
NORMALIZED THRESHOLD
CURRENT I
F(On)
, I
F(Off)
1.0
I
F(Off)
100
0.8
I
O
- LOAD CURRENT (mA)
0.6
10
I
F
= I
F(ON)
V
CC
= 5V
0.4
NORMALIZED TO :
V
CC
= 5V
T
A
= 25°C
0.2
0.0
0
10
20
30
40
50
60
70
1
0.0
0.2
0.4
0.6
0.8
1.0
TA – TEMPERATURE (°C)
V
O
– OUTPUT VOLTAGE, LOW (V)
©2005 Fairchild Semiconductor Corporation
H11N1M, H11N2M, H11N3M Rev. 1.0.2
www.fairchildsemi.com
5
