N P N S I L I C O N T RAN S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
H5342
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APPLICATIONS
Medium power amplifier
.
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ABSOLUTE MAXIMUM RATINGS（T
a
=25℃）
T
stg
——Storage
Temperature………………………… -55~150℃
T
j
——Juncttion
Temperature…………………………………150℃
P
C
——Collector
Dissipation…………………………………625mW
V
CBO
——Collector-Base
Voltage………………………………40V
V
CEO
——Collector-Emitter
Voltage……………………………32V
V
EB O
——Emitter-Base
Voltage………………………………5V
I
C
——Collector
Current………………………………………500mA
1―Emitter，E
2―Collector，
C
3―Base，B
TO-92
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ELECTRICAL CHARACTERISTICS（T
a
=25℃）
Symbol
Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter- Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Min
Typ
Max
Unit
Test Conditions
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
H
FE
f
T
Cob
40
32
5
0.1
0.1
70
300
7.0
240
0.25
V
V
V
μA
μA
V
MHz
pF
I
C
=100μA，I
E
=0
I
C
=1mA，I
B
=0
I
E
=10μA，I
C
=0
V
CB
=40V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=1V, I
C
=100mA
I
C
=100mA, I
B
=10mA
V
CE
=6V, I
E
=-20mA
V
CB
=6V,I
E
=0，f=1MHz
V
CE(sat）
Collector- Emitter Saturation Voltage
Current Gain-Bandwidth Product
Output Capacacitance
█
h
FE
Classification
O
70—140
Y
120—240
Shantou Huashan Electronic Devices Co.,Ltd.
H5342
