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H5PS1G63EFR-E3Q

DDR DRAM, 64MX16, 0.6ns, CMOS, PBGA84, HALOGEN FREE AND ROHS COMPLIANT, FBGA-84

器件类别:存储    存储   

厂商名称:SK Hynix(海力士)

厂商官网:http://www.hynix.com/eng/

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
SK Hynix(海力士)
零件包装代码
BGA
包装说明
TFBGA,
针数
84
Reach Compliance Code
compliant
ECCN代码
EAR99
访问模式
MULTI BANK PAGE BURST
最长访问时间
0.6 ns
其他特性
AUTO/SELF REFRESH
JESD-30 代码
R-PBGA-B84
长度
13 mm
内存密度
1073741824 bit
内存集成电路类型
DDR DRAM
内存宽度
16
功能数量
1
端口数量
1
端子数量
84
字数
67108864 words
字数代码
64000000
工作模式
SYNCHRONOUS
最高工作温度
95 °C
最低工作温度
-40 °C
组织
64MX16
封装主体材料
PLASTIC/EPOXY
封装代码
TFBGA
封装形状
RECTANGULAR
封装形式
GRID ARRAY, THIN PROFILE, FINE PITCH
认证状态
Not Qualified
座面最大高度
1.2 mm
自我刷新
YES
最大供电电压 (Vsup)
1.9 V
最小供电电压 (Vsup)
1.7 V
标称供电电压 (Vsup)
1.8 V
表面贴装
YES
技术
CMOS
温度等级
INDUSTRIAL
端子形式
BALL
端子节距
0.8 mm
端子位置
BOTTOM
宽度
8 mm
文档预览
H5PS1G63EFR Series
1Gb DDR2 SDRAM
H5PS1G63EFR-xxC
H5PS1G63EFR-xxI
H5PS1G63EFR-xxL
H5PS1G63EFR-xxJ
[New Product]
H5PS1G63EFR-xxP
H5PS1G63EFR-xxQ
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev. 1.1 / July 2009
1
Release
H5PS1G63EFR Series
Revision Details
Rev.
1.0
1.1
Released
Change : -P & -Q products
Page16 : IDD0, IDD1, IDD4R and IDD4W
Note1)
History
Draft Date
June. 2009
July. 2009
Note1) H5PS1G63EFR-xxP & H5PS1G63EFR-xxQ
Symbol
IDD0
IDD1
IDD4R
IDD4W
DDR2-667
Before
TBD
TBD
TBD
TBD
After
75
85
160
170
Before
80
90
170
180
DDR2-800
After
75
85
160
170
Units
mA
mA
mA
mA
Rev. 1.1 / July 2009
2
Release
H5PS1G63EFR Series
Contents
1. Description
1.1 Device Features and Ordering Information
1.1.1 Key Features
1.1.2 Ordering Information
1.1.3 Operating Frequency
1.2 Pin configuration
1.3 Pin Description
2. Maximum DC ratings
2.1 Absolute Maximum DC Ratings
2.2 Operating Temperature Condition
3. AC & DC Operating Conditions
3.1 DC Operating Conditions
3.1.1 Recommended DC Operating Conditions(SSTL_1.8)
3.1.2 ODT DC Electrical Characteristics
3.2 DC & AC Logic Input Levels
3.2.1 Input DC Logic Level
3.2.2 Input AC Logic Level
3.2.3 AC Input Test Conditions
3.2.4 Differential Input AC Logic Level
3.2.5 Differential AC Output Parameters
3.3 Output Buffer Levels
3.3.1 Output AC Test Conditions
3.3.2 Output DC Current Drive
3.3.3 OCD default characteristics
3.4 IDD Specifications & Measurement Conditions
3.5 Input/Output Capacitance
4. AC Timing Specifications
5. Package Dimensions
Rev. 1.1 / July 2009
3
Release
H5PS1G63EFR Series
1. Description
1.1 Device Features & Ordering Information
1.1.1 Key Features
VDD = 1.8 +/- 0.1V
VDDQ = 1.8 +/- 0.1V
All inputs and outputs are compatible with SSTL_18 interface
8 banks
Fully differential clock inputs (CK, /CK) operation
Double data rate interface
Source synchronous-data transaction aligned to bidirectional data strobe (DQS, DQS)
Differential Data Strobe (DQS, DQS)
Data outputs on DQS, DQS edges when read (edged DQ)
Data inputs on DQS centers when write (centered DQ)
On chip DLL align DQ, DQS and DQS transition with CK transition
DM mask write data-in at the both rising and falling edges of the data strobe
All addresses and control inputs except data, data strobes and data masks latched on the rising
edges of the clock
Programmable CAS latency 3, 4, 5 and 6 supported
Programmable additive latency 0, 1, 2, 3, 4 and 5 supported
Programmable burst length 4/8 with both nibble sequential and interleave mode
Internal eight bank operations with single pulsed RAS
Auto refresh and self refresh supported
tRAS lockout supported
8K refresh cycles /64ms
JEDEC standard 84ball FBGA(x16)
Full strength driver option controlled by EMR
On Die Termination supported
Off Chip Driver Impedance Adjustment supported
Self-Refresh High Temperature Entry
Rev. 1.1 / July 2009
4
Release
H5PS1G63EFR Series
Ordering Information
Part No.
H5PS1G63EFR-xx*C
H5PS1G63EFR-xx*I
H5PS1G63EFR-xx*L
64Mx16
H5PS1G63EFR-xx*J
H5PS1G63EFR-xx*P
H5PS1G63EFR-xx*Q
Note:
-XX* is the speed bin, refer to the Operating Frequency table for complete part number.
-xxP and xxQ are the low current bin, refer to the IDD specification table.
-
Hynix Halogen-free products are compliant to RoHS.
Hynix supports Lead & Halogen free parts for each speed grade with same specification, except Lead free materials.
We'll add "R" character after "F" for Lead & Halogen free products
Low Power Consumption
(IDD6 Only)
Low Current Consumption
Low Current Consumption
Industrial
Commercial
Industrial
Configura-
tion
Power Consumption
Normal Consumption
Normal Consumption
Low Power Consumption
(IDD6 Only)
Operation Temp
Commercial
Industrial
Commercial
84 Ball
fBGA
Package
Operating Frequency
Grade
E3
C4
Y5
S6
S5
G7
Note:
-G7
is a special speed product used in electronic engineering for high speed storage of the working data of a consumer
digital electronic device.
- x16 product only
tCK(ns)
5
3.75
3
2.5
2.5
1.875
CL
3
4
5
6
5
7
tRCD
3
4
5
6
5
7
tRP
3
4
5
6
5
7
Unit
Clk
Clk
Clk
Clk
Clk
Clk
Rev. 1.1 / July 2009
5
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