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H5TQ1G83TFR-PBC

DDR DRAM, 128MX8, 20ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78

器件类别：存储    存储   

厂商名称：SK Hynix(海力士)

厂商官网：http://www.hynix.com/eng/

器件标准：

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参数 预览 参数对比
器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
SK Hynix(海力士)
零件包装代码
BGA
包装说明
TFBGA, BGA78,9X13,32
针数
78
Reach Compliance Code
unknow
ECCN代码
EAR99
访问模式
MULTI BANK PAGE BURST
最长访问时间
20 ns
其他特性
AUTO/SELF REFRESH
最大时钟频率 (fCLK)
800 MHz
I/O 类型
COMMON
交错的突发长度
4,8
JESD-30 代码
R-PBGA-B78
JESD-609代码
e1
长度
11 mm
内存密度
1073741824 bi
内存集成电路类型
DDR DRAM
内存宽度
8
功能数量
1
端口数量
1
端子数量
78
字数
134217728 words
字数代码
128000000
工作模式
SYNCHRONOUS
最高工作温度
85 °C
最低工作温度
组织
128MX8
输出特性
3-STATE
封装主体材料
PLASTIC/EPOXY
封装代码
TFBGA
封装等效代码
BGA78,9X13,32
封装形状
RECTANGULAR
封装形式
GRID ARRAY, THIN PROFILE, FINE PITCH
峰值回流温度（摄氏度）
260
电源
1.5 V
认证状态
Not Qualified
刷新周期
8192
座面最大高度
1.2 mm
自我刷新
YES
连续突发长度
4,8
最大压摆率
0.13 mA
最大供电电压 (Vsup)
1.575 V
最小供电电压 (Vsup)
1.425 V
标称供电电压 (Vsup)
1.5 V
表面贴装
YES
技术
CMOS
温度等级
OTHER
端子面层
Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
端子形式
BALL
端子节距
0.8 mm
端子位置
BOTTOM
处于峰值回流温度下的最长时间
20
宽度
7.5 mm
文档预览
1Gb DDR3 SDRAM
1Gb DDR3 SDRAM
Lead-Free&Halogen-Free
(RoHS Compliant)
H5TQ1G43TFR-xxC
H5TQ1G83TFR-xxC
*Hynix Semiconductor reserves the right to change products or specifications without notice.
Rev. 1.1 / Jun. 2010
1
Revision History
Revision No.
0.1
1.0
1.1
History
Initial Release
JEDEC Update
Add supported CL5
Draft Date
Sep.2009
Nov.2009
Jun.2010
Remark
Preliminary
Web posting
Web posting
Rev. 1.1 / Jun. 2010
2
Description
The H5TQ1G43TFR-xxC, H5TQ1G83TFR-xxC are a 1,073,741,824-bit CMOS Double Data Rate III (DDR3)
Synchronous DRAM, ideally suited for the main memory applications which requires large memory density
and high bandwidth. Hynix 1Gb DDR3 SDRAMs offer fully synchronous operations referenced to both rising
and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the
CK (falling edges of the CK), Data, Data strobes and Write data masks inputs are sampled on both rising
and falling edges of it. The data paths are internally pipelined and 8-bit prefetched to achieve very high
bandwidth.
Device Features and Ordering Information
FEATURES
• VDD=VDDQ=1.5V +/- 0.075V
• Fully differential clock inputs (CK, CK) operation
• 8banks
• Average Refresh Cycle (Tcase of
0
o
C~ 95
o
C)
• Differential Data Strobe (DQS, DQS)
- 7.8 µs at
0
o
C ~ 85
o
C
- 3.9
µs at 85
o
C ~ 95
o
C
• On chip DLL align DQ, DQS and DQS transition with CK
transition
• Auto Self Refresh supported
• DM masks write data-in at the both rising and falling
edges of the data strobe
• All addresses and control inputs except data,
data strobes and data masks latched on the
rising edges of the clock
• Programmable CAS latency 5, 6, 7, 8, 9, 10 and (11)
supported
• Programmable additive latency 0, CL-1, and CL-2
supported
• Programmable CAS Write latency (CWL) = 5, 6, 7, 8
• Programmable burst length 4/8 with both nibble
sequential and interleave mode
• BL switch on the fly
• JEDEC standard 78ball FBGA(x4/x8)
• Driver strength selected by EMRS
• Dynamic On Die Termination supported
• Asynchronous RESET pin supported
• ZQ calibration supported
• TDQS (Termination Data Strobe) supported (x8 only)
• Write Levelization supported
• 8 bit pre-fetch
* This product in compliance with the RoHS directive.
Rev. 1.1 / Jun. 2010
3
ORDERING INFORMATION
Part No.
H5TQ1G43TFR-*xxC
H5TQ1G83TFR-*xxC
Configuration
256M x 4
128M x 8
Package
78ball FBGA
OPERATING FREQUENCY
Speed
Grade
(Marking)
-G7
-H9
-PB
Frequency [MHz]
CL5
O
O
O
CL6
O
O
O
CL7
O
O
O
CL8
O
O
O
O
O
O
O
O
CL9
CL10
CL11
Remark
(CL-tRCD-tRP)
DDR3-1066 7-7-7
DDR3-1333 9-9-9
DDR3-1600 11-11-11
* xx means Speed Bin Grade
Rev. 1.1 / Jun. 2010
4
Package Ballout/Mechanical Dimension
x4 Package Ball out (Top view): 78ball FBGA Package (no support balls)
1
A
B
C
D
E
F
G
H
J
K
L
M
N
VSS
VSS
VDDQ
VSSQ
VREFDQ
NC
ODT
NC
VSS
VDD
VSS
VDD
VSS
1
2
VDD
VSSQ
DQ2
NF
VDDQ
VSS
VDD
CS
BA0
A3
A5
A7
RESET
2
3
NC
DQ0
DQS
DQS
NF
RAS
CAS
WE
BA2
A0
A2
A9
A13
3
4
5
6
7
NF
DM
DQ1
VDD
NF
CK
CK
A10/AP
NC
A12/BC
A1
A11
A14
8
VSS
VSSQ
DQ3
VSS
NF
VSS
VDD
ZQ
VREFCA
BA1
A4
A6
A8
8
9
VDD
VDDQ
VSSQ
VSSQ
VDDQ
NC
CKE
NC
VSS
VDD
VSS
VDD
VSS
9
A
B
C
D
E
F
G
H
J
K
L
M
N
4
5
6
7
Note: NF (No Function) - This is applied to balls only used in x4 configuration.
1 2 3
A
B
C
D
E
F
G
H
J
K
L
M
N
7 8 9
(Top View: See the balls through the Package)
Populated ball
Ball not populated
Rev. 1.1 / Jun. 2010
5
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参数对比
与H5TQ1G83TFR-PBC相近的元器件有：H5TQ1G43TFR-G7C、H5TQ1G83TFR-G7C、H5TQ1G43TFR-PBC、H5TQ1G43TFR-H9C、H5TQ1G83TFR-H9C。描述及对比如下：
型号 H5TQ1G83TFR-PBC H5TQ1G43TFR-G7C H5TQ1G83TFR-G7C H5TQ1G43TFR-PBC H5TQ1G43TFR-H9C H5TQ1G83TFR-H9C
描述 DDR DRAM, 128MX8, 20ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78 DDR DRAM, 256MX4, 20ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78 DDR DRAM, 128MX8, 20ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78 DDR DRAM, 256MX4, 20ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78 DDR DRAM, 256MX4, 20ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78 DDR DRAM, 128MX8, 20ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78
是否Rohs认证 符合 符合 符合 符合 符合 符合
厂商名称 SK Hynix(海力士) SK Hynix(海力士) SK Hynix(海力士) SK Hynix(海力士) SK Hynix(海力士) SK Hynix(海力士)
零件包装代码 BGA BGA BGA BGA BGA BGA
包装说明 TFBGA, BGA78,9X13,32 TFBGA, BGA78,9X13,32 TFBGA, BGA78,9X13,32 TFBGA, BGA78,9X13,32 TFBGA, BGA78,9X13,32 TFBGA, BGA78,9X13,32
针数 78 78 78 78 78 78
Reach Compliance Code unknow unknown unknown unknown unknown unknow
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
访问模式 MULTI BANK PAGE BURST MULTI BANK PAGE BURST MULTI BANK PAGE BURST MULTI BANK PAGE BURST MULTI BANK PAGE BURST MULTI BANK PAGE BURST
最长访问时间 20 ns 20 ns 20 ns 20 ns 20 ns 20 ns
其他特性 AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH
最大时钟频率 (fCLK) 800 MHz 533 MHz 533 MHz 800 MHz 667 MHz 667 MHz
I/O 类型 COMMON COMMON COMMON COMMON COMMON COMMON
交错的突发长度 4,8 4,8 4,8 4,8 4,8 4,8
JESD-30 代码 R-PBGA-B78 R-PBGA-B78 R-PBGA-B78 R-PBGA-B78 R-PBGA-B78 R-PBGA-B78
JESD-609代码 e1 e1 e1 e1 e1 e1
长度 11 mm 11 mm 11 mm 11 mm 11 mm 11 mm
内存密度 1073741824 bi 1073741824 bit 1073741824 bit 1073741824 bit 1073741824 bit 1073741824 bi
内存集成电路类型 DDR DRAM DDR DRAM DDR DRAM DDR DRAM DDR DRAM DDR DRAM
内存宽度 8 4 8 4 4 8
功能数量 1 1 1 1 1 1
端口数量 1 1 1 1 1 1
端子数量 78 78 78 78 78 78
字数 134217728 words 268435456 words 134217728 words 268435456 words 268435456 words 134217728 words
字数代码 128000000 256000000 128000000 256000000 256000000 128000000
工作模式 SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
最高工作温度 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C
组织 128MX8 256MX4 128MX8 256MX4 256MX4 128MX8
输出特性 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 TFBGA TFBGA TFBGA TFBGA TFBGA TFBGA
封装等效代码 BGA78,9X13,32 BGA78,9X13,32 BGA78,9X13,32 BGA78,9X13,32 BGA78,9X13,32 BGA78,9X13,32
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH
峰值回流温度（摄氏度） 260 260 260 260 260 260
电源 1.5 V 1.5 V 1.5 V 1.5 V 1.5 V 1.5 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
刷新周期 8192 8192 8192 8192 8192 8192
座面最大高度 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm
自我刷新 YES YES YES YES YES YES
连续突发长度 4,8 4,8 4,8 4,8 4,8 4,8
最大压摆率 0.13 mA 0.13 mA 0.13 mA 0.16 mA 0.16 mA 0.13 mA
最大供电电压 (Vsup) 1.575 V 1.575 V 1.575 V 1.575 V 1.575 V 1.575 V
最小供电电压 (Vsup) 1.425 V 1.425 V 1.425 V 1.425 V 1.425 V 1.425 V
标称供电电压 (Vsup) 1.5 V 1.5 V 1.5 V 1.5 V 1.5 V 1.5 V
表面贴装 YES YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 OTHER OTHER OTHER OTHER OTHER OTHER
端子面层 Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
端子形式 BALL BALL BALL BALL BALL BALL
端子节距 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm
端子位置 BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
处于峰值回流温度下的最长时间 20 20 20 20 20 20
宽度 7.5 mm 7.5 mm 7.5 mm 7.5 mm 7.5 mm 7.5 mm
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器件捷径:
00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
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