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H5TQ2G43CFR-TEC

256M X 8 DDR DRAM, 20 ns, PBGA78
256M × 8 双倍速率同步动态随机存储器 动态随机存取存储器, 20 ns, PBGA78

器件类别：存储   

厂商名称：SK Hynix(海力士)

厂商官网：http://www.hynix.com/eng/

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参数 预览 参数对比
器件参数
参数名称
属性值
功能数量
1
端子数量
78
最大工作温度
85 Cel
最小工作温度
0.0 Cel
最大供电/工作电压
1.58 V
最小供电/工作电压
1.42 V
额定供电电压
1.5 V
最小存取时间
20 ns
加工封装描述
HALOGEN FREE AND ROHS COMPLIANT, FBGA-78
状态
ACTIVE
包装形状
矩形的
包装尺寸
GRID 阵列, HEAT SINK/SLUG
表面贴装
Yes
端子形式
BALL
端子间距
0.8000 mm
端子位置
BOTTOM
包装材料
塑料/环氧树脂
温度等级
其他
内存宽度
8
组织
256M × 8
存储密度
2.15E9 deg
操作模式
同步
位数
2.68E8 words
位数
256M
存取方式
多 BANK PAGE BURST
内存IC类型
双倍速率同步动态随机存储器 动态随机存取存储器
端口数
1
文档预览
2Gb DDR3 SDRAM
2Gb DDR3 SDRAM
Lead-Free&Halogen-Free
(RoHS Compliant)
H5TQ2G43CFR-xxC
H5TQ2G83CFR-xxC
* Hynix Semiconductor reserves the right to change products or specifications without notice.
Rev. 1.0/ Apr. 2013
1
Revision History
Revision No.
0.01
0.1
0.2
1.0
History
Preliminary version release
Added IDD Specification
JEDEC Update
Editorial PKG Dimension
Draft Date
Nov. 2010
Aug. 2011
Feb. 2012
Apr. 2013
Remark
Preliminary
Rev. 1.0 / Apr. 2013
2
Description
The H5TQ2G43CFR-xxC, H5TQ2G83CFR-xxC are a
2,147,483,648-bit
CMOS Double Data Rate III (DDR3)
Synchronous DRAM, ideally suited for the main memory applications which requires large memory density
and high bandwidth. SK hynix 2Gb DDR3 SDRAMs offer fully synchronous operations referenced to both
rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges
of the CK (falling edges of the CK), Data, Data strobes and Write data masks inputs are sampled on both
rising and falling edges of it. The data paths are internally pipelined and 8-bit prefetched to achieve very
high bandwidth.
Device Features and Ordering Information
FEATURES
• VDD=VDDQ=1.5V +/- 0.075V
• Fully differential clock inputs (CK, CK) operation
• 8banks
• Average Refresh Cycle (Tcase of
0
o
C~ 95
o
C)
• Differential Data Strobe (DQS, DQS)
- 7.8 µs at
0
o
C ~ 85
o
C
- 3.9
µs at 85
o
C ~ 95
o
C
• On chip DLL align DQ, DQS and DQS transition with CK
transition
• JEDEC standard 78ball FBGA(x4/x8)
• DM masks write data-in at the both rising and falling
edges of the data strobe
• All addresses and control inputs except data,
data strobes and data masks latched on the
rising edges of the clock
• Programmable CAS latency 5, 6, 7, 8, 9, 10, 11, 12, 13
and 14 supported
• Programmable additive latency 0, CL-1, and CL-2
supported
• Programmable CAS Write latency (CWL) = 5, 6, 7, 8, 9,
10
• Programmable burst length 4/8 with both nibble
sequential and interleave mode
• BL switch on the fly
• Driver strength selected by EMRS
• Dynamic On Die Termination supported
• Asynchronous RESET pin supported
• ZQ calibration supported
• TDQS (Termination Data Strobe) supported (x8 only)
• Write Levelization supported
• 8 bit pre-fetch
• This product in compliance with the RoHS directive.
Rev. 1.0 / Apr. 2013
3
ORDERING INFORMATION
Part No.
H5TQ2G43CFR-*xxC
H5TQ2G83CFR-*xxC
Configuration
512M x 4
256M x 8
Package
78ball FBGA
* xx means Speed Bin Grade
OPERATING FREQUENCY
Frequency [MHz]
Grade
CL5
-G7
-H9
-PB
-RD
-TE
667
667
667
CL6
800
800
800
800
800
CL7
1066
1066
1066
1066
1066
CL8
1066
1066
1066
1066
1066
1333
1333
1333
1333
1333
1333
1333
1333
1600
1600
1600
1866
1866
2133
CL9
CL10
CL11
CL12
CL13
CL14
Remark
Rev. 1.0 / Apr. 2013
4
Package Ballout/Mechanical Dimension
x4 Package Ball out (Top view): 78ball FBGA Package
1
A
B
C
D
E
F
G
H
J
K
L
M
N
VSS
VSS
VDDQ
VSSQ
VREFDQ
NC
ODT
NC
VSS
VDD
VSS
VDD
VSS
1
2
VDD
VSSQ
DQ2
NF
VDDQ
VSS
VDD
CS
BA0
A3
A5
A7
RESET
2
3
NC
DQ0
DQS
DQS
NF
RAS
CAS
WE
BA2
A0
A2
A9
A13
3
4
5
6
4
5
6
7
NF
DM
DQ1
VDD
NF
CK
CK
A10/AP
NC
A12/BC
A1
A11
A14
7
8
VSS
VSSQ
DQ3
VSS
NF
VSS
VDD
ZQ
VREFCA
BA1
A4
A6
A8
8
9
VDD
VDDQ
VSSQ
VSSQ
VDDQ
NC
CKE
NC
VSS
VDD
VSS
VDD
VSS
9
A
B
C
D
E
F
G
H
J
K
L
M
N
Note: NF (No Function) - This is applied to balls only used in x4 configuration.
1 2 3
A
B
C
D
E
F
G
H
J
K
L
M
N
7 8 9
(Top View: See the balls through the Package)
Populated ball
Ball not populated
Rev. 1.0 / Apr. 2013
5
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参数对比
与H5TQ2G43CFR-TEC相近的元器件有：H5TQ2G43CFR、H5TQ2G43CFR-G7C、H5TQ2G43CFR-PBC、H5TQ2G43CFR-RDC、H5TQ2G83CFR-G7C、H5TQ2G83CFR-H9C、H5TQ2G83CFR-PBC、H5TQ2G83CFR-RDC。描述及对比如下：
型号 H5TQ2G43CFR-TEC H5TQ2G43CFR H5TQ2G43CFR-G7C H5TQ2G43CFR-PBC H5TQ2G43CFR-RDC H5TQ2G83CFR-G7C H5TQ2G83CFR-H9C H5TQ2G83CFR-PBC H5TQ2G83CFR-RDC
描述 256M X 8 DDR DRAM, 20 ns, PBGA78 256M X 8 DDR DRAM, 20 ns, PBGA78 256M X 8 DDR DRAM, 20 ns, PBGA78 256M X 8 DDR DRAM, 20 ns, PBGA78 256M X 8 DDR DRAM, 20 ns, PBGA78 256M X 8 DDR DRAM, 20 ns, PBGA78 256M X 8 DDR DRAM, 20 ns, PBGA78 256M X 8 DDR DRAM, 20 ns, PBGA78 256M X 8 DDR DRAM, 20 ns, PBGA78
功能数量 1 1 1 1 1 1 1 1 1
端子数量 78 78 78 78 78 78 78 78 78
表面贴装 Yes Yes YES YES YES YES YES YES YES
端子形式 BALL BALL BALL BALL BALL BALL BALL BALL BALL
端子位置 BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
温度等级 其他 其他 OTHER OTHER OTHER OTHER OTHER OTHER OTHER
内存宽度 8 8 4 4 4 8 8 8 8
组织 256M × 8 256M × 8 512MX4 512MX4 512MX4 256MX8 256MX8 256MX8 256MX8
是否Rohs认证 - - 符合 符合 符合 符合 符合 符合 符合
厂商名称 - - SK Hynix(海力士) SK Hynix(海力士) SK Hynix(海力士) SK Hynix(海力士) SK Hynix(海力士) SK Hynix(海力士) SK Hynix(海力士)
零件包装代码 - - BGA BGA BGA BGA BGA BGA BGA
包装说明 - - HBGA, BGA78,9X13,32 HBGA, BGA78,9X13,32 HBGA, BGA78,9X13,32 HBGA, BGA78,9X13,32 HBGA, BGA78,9X13,32 HBGA, BGA78,9X13,32 HBGA, BGA78,9X13,32
针数 - - 78 78 78 78 78 78 78
Reach Compliance Code - - compli compli compli compli compli compli compli
ECCN代码 - - EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
访问模式 - - MULTI BANK PAGE BURST MULTI BANK PAGE BURST MULTI BANK PAGE BURST MULTI BANK PAGE BURST MULTI BANK PAGE BURST MULTI BANK PAGE BURST MULTI BANK PAGE BURST
最长访问时间 - - 20 ns 20 ns 20 ns 20 ns 20 ns 20 ns 20 ns
其他特性 - - AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH
最大时钟频率 (fCLK) - - 533 MHz 800 MHz 933 MHz 533 MHz 667 MHz 800 MHz 933 MHz
I/O 类型 - - COMMON COMMON COMMON COMMON COMMON COMMON COMMON
交错的突发长度 - - 4,8 4,8 4,8 4,8 4,8 4,8 4,8
JESD-30 代码 - - R-PBGA-B78 R-PBGA-B78 R-PBGA-B78 R-PBGA-B78 R-PBGA-B78 R-PBGA-B78 R-PBGA-B78
JESD-609代码 - - e1 e1 e1 e1 e1 e1 e1
长度 - - 11 mm 11 mm 11 mm 11 mm 11 mm 11 mm 11 mm
内存密度 - - 2147483648 bi 2147483648 bi 2147483648 bi 2147483648 bi 2147483648 bi 2147483648 bi 2147483648 bi
内存集成电路类型 - - DDR DRAM DDR DRAM DDR DRAM DDR DRAM DDR DRAM DDR DRAM DDR DRAM
端口数量 - - 1 1 1 1 1 1 1
字数 - - 536870912 words 536870912 words 536870912 words 268435456 words 268435456 words 268435456 words 268435456 words
字数代码 - - 512000000 512000000 512000000 256000000 256000000 256000000 256000000
工作模式 - - SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
最高工作温度 - - 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C
输出特性 - - 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
封装主体材料 - - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 - - HBGA HBGA HBGA HBGA HBGA HBGA HBGA
封装等效代码 - - BGA78,9X13,32 BGA78,9X13,32 BGA78,9X13,32 BGA78,9X13,32 BGA78,9X13,32 BGA78,9X13,32 BGA78,9X13,32
封装形状 - - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 - - GRID ARRAY, HEAT SINK/SLUG GRID ARRAY, HEAT SINK/SLUG GRID ARRAY, HEAT SINK/SLUG GRID ARRAY, HEAT SINK/SLUG GRID ARRAY, HEAT SINK/SLUG GRID ARRAY, HEAT SINK/SLUG GRID ARRAY, HEAT SINK/SLUG
峰值回流温度（摄氏度） - - 260 260 260 260 260 260 260
电源 - - 1.5 V 1.5 V 1.5 V 1.5 V 1.5 V 1.5 V 1.5 V
认证状态 - - Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
刷新周期 - - 8192 8192 8192 8192 8192 8192 8192
座面最大高度 - - 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm
自我刷新 - - YES YES YES YES YES YES YES
连续突发长度 - - 4,8 4,8 4,8 4,8 4,8 4,8 4,8
最大待机电流 - - 0.012 A 0.012 A - 0.012 A 0.012 A 0.012 A -
最大压摆率 - - 0.145 mA 0.185 mA - 0.145 mA 0.18 mA 0.185 mA -
最大供电电压 (Vsup) - - 1.575 V 1.575 V 1.575 V 1.575 V 1.575 V 1.575 V 1.575 V
最小供电电压 (Vsup) - - 1.425 V 1.425 V 1.425 V 1.425 V 1.425 V 1.425 V 1.425 V
标称供电电压 (Vsup) - - 1.5 V 1.5 V 1.5 V 1.5 V 1.5 V 1.5 V 1.5 V
技术 - - CMOS CMOS CMOS CMOS CMOS CMOS CMOS
端子面层 - - Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu)
端子节距 - - 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm
处于峰值回流温度下的最长时间 - - 20 20 20 20 20 20 20
宽度 - - 7.5 mm 7.5 mm 7.5 mm 7.5 mm 7.5 mm 7.5 mm 7.5 mm
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