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HA4-5134/883

QUAD OP-AMP, 350 uV OFFSET-MAX, 3 MHz BAND WIDTH, CQCC20
四路运算放大器, 350 uV 最大补偿, 3 MHz 波段 宽度, CQCC20

器件类别:半导体    模拟混合信号IC   

厂商名称:Intersil ( Renesas )

厂商官网:http://www.intersil.com/cda/home/

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器件参数
参数名称
属性值
最大输入失调电压
350 µV
最大负供电电压
-20 V
额定负供电电压
-15 V
功能数量
4
端子数量
20
最小工作温度
-55 Cel
最大工作温度
125 Cel
最大供电/工作电压
20 V
额定供电电压
15 V
状态
Active
放大器类型
OPERATIONAL AMPLIFIER
最大输入偏置电流IIB
0.0750 µA
额定共模抑制比
94 dB
jesd_30_code
S-CQCC-N20
jesd_609_code
e0
moisture_sensitivity_level
NOT SPECIFIED
包装材料
CERAMIC, METAL-SEALED COFIRED
包装形状
SQUARE
包装尺寸
CHIP CARRIER
eak_reflow_temperature__cel_
NOT SPECIFIED
qualification_status
MILITARY
sub_category
Operational Amplifie
表面贴装
YES
工艺
BIPOLAR
温度等级
MILITARY
端子涂层
TIN LEAD
端子形式
NO LEAD
端子位置
QUAD
ime_peak_reflow_temperature_max__s_
NOT SPECIFIED
unity_gain_bw_nom
3000 kHz
文档预览
T
ODUC
T E PR
DUCT
SO L E
E PR O 1
T
OB
STITU
20
E SUB r 5962-8850
IBL
POSS 104/883 o
HA-5
July 2001
HA-5134/883
Precision Quad Operational Amplifier
Description
The HA-5134/883 is a precision quad operational amplifier that
is pin compatible with the OP-400, LT1014, OP11, RM4156,
and LM148 as well as the HA-4741/883. Each amplifier fea-
tures guaranteed maximum values for offset voltage of 350µV,
offset voltage drift of 2µV/
o
C (max), and offset current of 75nA
over the full military temperature range while CMRR/PSRR is
guaranteed greater than 94dB and open loop gain is guaran-
teed above 500kV/V from -55
o
C to +125
o
C. Room temperature
specifications exceed these values such as an offset voltage
matching specification between channels of 200µV (max) at
+25
o
C.
Precision performance of the HA-5134/883 is enhanced by a
noise voltage density of 7nV/√Hz at 1kHz (typ), noise current
density of 2pA/√Hz at 1kHz and channel separation of 120dB
(min). Each of the four unity gain stable amps on the quad are
electrically isolated, having only supply lines in common and
are fabricated using Dielectric Isolation to insure quality perfor-
mance in the most demanding applications.
The HA-5134/883 is ideal for compact circuits such as instru-
mentation amplifiers, state-variable filters, and low level trans-
ducer amplifiers. Other applications include precision data
acquisition systems, precision integrators, and accurate thresh-
old detectors in designs where board space is a limitation.
Features
• This Circuit is Processed in Accordance to MIL-STD-
883 and is Fully Conformant Under the Provisions of
Paragraph 1.2.1.
• Low Offset Voltage (+25
o
C). . . . . . . . . . . . .200µV (Max)
(Full Temp.) . . . . . . . . . . . .350µV (Max)
• Low Offset Voltage Drift at Temp. . . . . . . . 2µV/
o
C (Max)
• Offset Voltage Match . . . . . . . . . . . . . . . . . .350µV (Max)
• High Channel Separation . . . . . . . . . . . . . . 120dB (Min)
• Low Noise (f
100Hz) . . . . . . . . . . . . . . 10nV/√Hz (Max)
• Wide Bandwidth . . . . . . . . . . . . . . . . . . . . . . .4MHz (Typ)
• High CMRR/PSRR . . . . . . . . . . . . . . . . . . . . 100dB (Min)
• High Voltage Gain . . . . . . . . . . . . . . . . . . 800kV/V (Min)
• Dielectric Isolation
Applications
• Instrumentation Amplifiers
• State-Variable Filters
• Precision Integrators
• Threshold Detectors
• Precision Data Acquisition Systems
• Low-Level Transducer Amplifiers
Part Number Information
PART
NUMBER
HA1-5134/883
HA4-5134/883
TEMPERATURE
RANGE
-55
o
C to +125
o
C
-55
o
C to +125
o
C
PACKAGE
14 Lead CerDIP
20 Lead Ceramic LCC
Pinouts
HA-5134/883
(CERDIP)
TOP VIEW
OUT1
-IN1
+IN1
V+
+IN2
-IN2
OUT2
1
2
3
4
5
6
7
+
-2
+
3-
-
+1
-
4+
14
13
12
11
10
9
8
OUT4
-IN4
+IN4
V-
+IN3
-IN3
OUT3
+IN1
NC
V+
NC
+IN2
4
5
6
7
8
9
-IN2
10 11 12 13
OUT2
OUT3
-IN3
NC
2
+ -
3
- +
+ -
1
- +
4
HA-5134/883
(CLCC)
TOP VIEW
OUT1
OUT4
-IN1
-IN4
18 +IN4
17 NC
16 V-
15 NC
14 +IN3
NC
1
3
2
20 19
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143
|
Intersil and Design is a trademark of Intersil Americas Inc.
|
Copyright © Intersil Americas Inc. 2001
Spec Number
1
511033-883
File Number
3713.1
Specifications HA-5134/883
Absolute Maximum Ratings
Voltage Between V+ and V- Terminals . . . . . . . . . . . . . . . . . . . . 40V
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Voltage at Either Input Terminal . . . . . . . . . . . . . . . . . . . . . . V+ to V-
Input Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25mA
Output Current . . . . . . . . . . . . . . . . . . . .Full Short Circuit Protection
Output Current Duration . . . . . . . . . . . . . . . . . . . . . . . . . . . Indefinite
(One Amplifier Shorted to Ground)
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
Storage Temperature Range . . . . . . . . . . . . . . . . . -65
o
C to +150
o
C
ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <2000V
Lead Temperature (Soldering 10s) . . . . . . . . . . . . . . . . . . . . +300
o
C
Thermal Information
Thermal Resistance
θ
JA
θ
JC
o
CerDIP Package . . . . . . . . . . . . . . . . . . .
75 C/W
20
o
C/W
o
Ceramic LCC Package . . . . . . . . . . . . . .
65 C/W
15
o
C/W
Package Power Dissipation Limit at +75
o
C for T
J
+175
o
C
CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.33W
Ceramic LCC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.54W
Package Power Dissipation Derating Factor Above +75
o
C
CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.3mW/
o
C
Ceramic LCC Package . . . . . . . . . . . . . . . . . . . . . . . . 15.4mW/
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Operating Temperature Range . . . . . . . . . . . . . . . . -55
o
C to +125
o
C
Operating Supply Voltage
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±15V
V
INCM
1/2 (V+ - V-)
R
L
2kΩ
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at: V
SUPPLY
=
±15V,
R
SOURCE
= 50Ω, R
LOAD
= 100kΩ, V
OUT
= 0V, Unless Otherwise Specified.
GROUP A
SUBGROUPS
1
2, 3
Offset Voltage Match
∆V
IO
V
IO
(Max) -V
IO
(Min)
1
2, 3
Input Bias Current
+I
B
V
CM
= 0V,
+R
S
= 10kΩ,
-R
S
= 50Ω
V
CM
= 0V,
+R
S
= 50Ω,
-R
S
= 10kΩ
V
CM
= 0V,
+R
S
= 10kΩ,
-R
S
= 10kΩ
V+ = +5V, V- = -25V
1
2, 3
1
2, 3
1
2, 3
1
2, 3
-CMR
V+ = +25V, V- = -5V
1
2, 3
Large Signal Voltage
Gain
+A
VOL
V
OUT
= 0V and +10V,
R
L
= 2kΩ
V
OUT
= 0V and -10V,
R
L
= 2kΩ
∆V
CM
= 10V,
V+ = +5V, V- = -25V,
V
OUT
= -10V
∆V
CM
= 10V,
V+ = +25V, V- = -5V,
V
OUT
= +10V
R
L
= 2kΩ
4
5, 6
4
5, 6
1
2, 3
1
2, 3
4
5, 6
-V
OUT1
R
L
= 2kΩ
4
5, 6
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
MIN
-200
-350
-
-
-50
-75
-50
-75
-50
-75
10
10
-
-
800
500
800
500
100
94
100
94
12
12
-
-
MAX
200
350
200
350
50
75
50
75
50
75
-
-
-10
-10
-
-
-
-
-
-
-
-
-
-
-12
-12
UNITS
µV
µV
µV
µV
nA
nA
nA
nA
nA
nA
V
V
V
V
kV/V
kV/V
kV/V
kV/V
dB
dB
dB
dB
V
V
V
V
PARAMETERS
Input Offset Voltage
SYMBOL
V
IO
CONDITIONS
V
CM
= 0V
-I
B
Input Offset Current
I
IO
Common Mode
Range
+CMR
-A
VOL
Common Mode
Rejection Ratio
+CMRR
-CMRR
Output Voltage
Swing
+V
OUT1
Spec Number
2
511033-883
Specifications HA-5134/883
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
Device Tested at: V
SUPPLY
=
±15V,
R
SOURCE
= 50Ω, R
LOAD
= 100kΩ, V
OUT
= 0V, Unless Otherwise Specified.
GROUP A
SUBGROUPS
4
5, 6
-I
OUT
V
OUT
= +10V
4
5, 6
Quiescent Power
Supply Current
+I
CC
V
OUT
= 0V, I
OUT
=
0mA
V
OUT
= 0V, I
OUT
=
0mA
∆V
SUP
= 10V,
V+ = +20V, V- = -15V
V+ = +10V, V- = -15V
∆V
SUP
= 10V,
V+ = +15V, V- = -20V
V+ = +15V, V- = -10V
1
2, 3
1
2, 3
1
2, 3
1
2, 3
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
MIN
15
8
-
-
-
-
-
-
100
94
100
94
MAX
-
-
-15
-8
6.8
8
6.8
8
-
-
-
-
UNITS
mA
mA
mA
mA
mA
mA
mA
mA
dB
dB
dB
dB
PARAMETERS
Output Current
SYMBOL
+I
OUT
CONDITIONS
V
OUT
= -10V
-I
CC
Power Supply
Rejection Ratio
+PSRR
-PSRR
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at: V
SUPPLY
=
±15V,
R
SOURCE
= 50Ω, R
LOAD
= 2kΩ, C
LOAD
= 50pF, A
VCL
= +1V/V, Unless Otherwise Specified.
GROUP A
SUBGROUPS
7
7
7
7
7
7
LIMITS
TEMPERATURE
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
MIN
0.75
0.75
-
-
-
-
MAX
-
-
400
400
40
40
UNITS
V/µs
V/µs
ns
ns
%
%
PARAMETERS
Slew Rate
SYMBOL
+SR
-SR
CONDITIONS
V
OUT
= -3V to +3V
V
OUT
= +3V to -3V
V
OUT
= 0 to +200mV
10%
T
R
90%
V
OUT
= 0 to -200mV
10%
T
F
90%
V
OUT
= 0 to +200mV
V
OUT
= 0 to -200mV
Rise and Fall Time
t
R
t
F
Overshoot
+OS
-OS
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Characterized at: V
SUPPLY
=
±15V,
R
LOAD
= 2kΩ, C
LOAD
= 50pF, Unless Otherwise Specified.
LIMITS
PARAMETERS
Average Offset Voltage
Drift
Differential Input
Resistance
Low Frequency
Peak-to-Peak Noise
Input Noise Voltage
Density
Input Noise Current
Density
SYMBOL
V
IO
TC
R
IN
E
NP-P
E
N
I
N
CONDITIONS
V
CM
= 0V
V
CM
= 0V
0.1Hz to 10Hz
R
S
= 20Ω, f
O
= 1kHz
R
S
= 2MΩ, f
O
= 1kHz
NOTES
1
1
1
1
1
TEMPERATURE
-55
o
C to +125
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
MIN
-
20
-
-
-
MAX
2
-
0.25
10
2
UNITS
µV/
o
C
MΩ
µV
P-P
nV/√Hz
pA/√Hz
Spec Number
3
511033-883
Specifications HA-5134/883
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
Device Characterized at: V
SUPPLY
=
±15V,
R
LOAD
= 2kΩ, C
LOAD
= 50pF, Unless Otherwise Specified.
LIMITS
PARAMETERS
Gain Bandwidth Product
Unity Bandwidth Product
Slew Rate
SYMBOL
GBWP
UBWP
+SR
-SR
Full Power Bandwidth
Minimum Closed Loop
Stable Gain
Rise and Fall Time
FPBW
CLSG
t
R
t
F
Overshoot
+OS
-OS
Output Resistance
Power Consumption
Channel Separation (AC)
R
OUT
PC
CS (AC)
CONDITIONS
V
O
= 200mV,
f
O
100kHz
V
O
= 200mV
V
OUT
= -3V to +3V
V
OUT
= +3V to -3V
V
PEAK
= 10V
R
L
= 2kΩ, C
L
= 50pF
V
OUT
= 0V to +200mV
V
OUT
= 0V to -200mV
V
OUT
= 0V to +200mV
V
OUT
= 0V to -200mV
Open Loop
V
OUT
= 0V, I
OUT
=
0mA
V
IN
= 1V
P-P
,
f
O
=
100Hz
V
IN
= 1V
P-P
,
f
O
=
10kHz
Channel Separation (DC)
NOTES:
1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These param-
eters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization
based upon data from multiple production runs which reflect lot to lot and within lot variation.
2. Full Power Bandwidth guarantee based on Slew Rate measurement using FPBW = Slew Rate/(2πV
PEAK
).
3. Power Consumption based upon Quiescent Supply Current test maximum. (No load on outputs.).
4. Measured between 10% and 90% points.
CS (DC)
V
O
=
±10V
(20V
P-P
),
∆V
IO
20µV
NOTES
1
1
1
1
1, 2
1
1, 4
1, 4
1
1
1
1, 3
1
1
1
TEMPERATURE
+25
o
C
+25
o
C
+25
o
C to +125
o
C
-55
o
C
+25
o
C
-55
o
C to +125
o
C
-55
o
C to +125
o
C
-55
o
C to +125
o
C
-55
o
C to +125
o
C
-55
o
C to +125
o
C
+25
o
C
-55
o
C to +125
o
C
+25
o
C
+25
o
C
+25
o
C
MIN
3
3
0.75
0.6
12
+1
-
-
-
-
-
-
120
120
120
MAX
-
-
-
-
-
-
400
400
40
40
86
240
-
-
-
UNITS
MHz
MHz
V/µs
V/µs
kHz
V/V
ns
ns
%
%
mW
dB
dB
dB
TABLE 4. ELECTRICAL TEST REQUIREMENTS
MIL-STD-883 TEST REQUIREMENTS
Interim Electrical Parameters (Pre Burn-In)
Final Electrical Test Parameters
Group A Test Requirements
Groups C and D Endpoints
NOTE:
1. PDA applies to Subgroup 1 only.
SUBGROUPS (SEE TABLES 1 AND 2)
1
1 (Note 1), 2, 3, 4, 5, 6, 7
1, 2, 3, 4, 5, 6, 7
1
Spec Number
4
511033-883
HA-5134/883
Die Characteristics
DIE DIMENSIONS:
91 x 114 x 19 mils
±
1 mils
2300 x 2900 x 483µm
±
25.4µm
METALLIZATION:
Type: Al, 1% Cu
Thickness: 16k
Å
±
2k
Å
GLASSIVATION:
Type: Nitride (Si3N4) over Silox (SIO2, 5% Phos.)
Silox Thickness: 12k
Å
±
2k
Å
Nitride Thickness: 3.5k
Å
±
1.5k
Å
WORST CASE CURRENT DENSITY:
2.5 x 10
5
A/cm
2
This device meets Glassivation Integrity Test Requirement
per MIL-STD-883 Method 2021 and MIL-I-38535 Paragraph 30.5.5.4.
SUBSTRATE POTENTIAL (Powered Up):
Unbiased
TRANSISTOR COUNT:
160
PROCESS:
Bipolar Dielectric Isolation
Metallization Mask Layout
HA-5134/883
-IN1
OUT1
OUT4
-IN4
+IN1
+IN4
V+
V-
+IN2
+IN3
-IN2
OUT2
OUT3
-IN3
All Intersil products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at website www.intersil.com/design/quality/iso.asp.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice.
Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reli-
able. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
www.intersil.com
Spec Number
5
511033-883
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参数对比
与HA4-5134/883相近的元器件有:HA-5134/883、HA-5134883、HA1-5134/883。描述及对比如下:
型号 HA4-5134/883 HA-5134/883 HA-5134883 HA1-5134/883
描述 QUAD OP-AMP, 350 uV OFFSET-MAX, 3 MHz BAND WIDTH, CQCC20 QUAD OP-AMP, 350 uV OFFSET-MAX, 3 MHz BAND WIDTH, CDIP14 QUAD OP-AMP, 350 uV OFFSET-MAX, 3 MHz BAND WIDTH, CDIP14 QUAD OP-AMP, 350 uV OFFSET-MAX, 3 MHz BAND WIDTH, CDIP14
最大输入失调电压 350 µV 350 µV 350 µV 350 µV
最大负供电电压 -20 V -20 V -20 V -20 V
额定负供电电压 -15 V -15 V -15 V -15 V
功能数量 4 4 4 4
端子数量 20 14 14 14
最小工作温度 -55 Cel -55 Cel -55 Cel -55 Cel
最大工作温度 125 Cel 125 Cel 125 Cel 125 Cel
最大供电/工作电压 20 V 20 V 20 V 20 V
额定供电电压 15 V 15 V 15 V 15 V
状态 Active Active Active Active
放大器类型 OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER
最大输入偏置电流IIB 0.0750 µA 0.0750 µA 0.0750 µA 0.0750 µA
额定共模抑制比 94 dB 94 dB 94 dB 94 dB
jesd_30_code S-CQCC-N20 R-GDIP-T14 R-GDIP-T14 R-GDIP-T14
jesd_609_code e0 e0 e0 e0
moisture_sensitivity_level NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
包装材料 CERAMIC, METAL-SEALED COFIRED CERAMIC, GLASS-SEALED CERAMIC, GLASS-SEALED CERAMIC, GLASS-SEALED
包装形状 SQUARE RECTANGULAR RECTANGULAR RECTANGULAR
包装尺寸 CHIP CARRIER IN-LINE IN-LINE IN-LINE
eak_reflow_temperature__cel_ NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
qualification_status MILITARY MILITARY MILITARY MILITARY
sub_category Operational Amplifie Operational Amplifie Operational Amplifie Operational Amplifie
表面贴装 YES NO NO NO
工艺 BIPOLAR BIPOLAR BIPOLAR BIPOLAR
温度等级 MILITARY MILITARY MILITARY MILITARY
端子涂层 TIN LEAD TIN LEAD TIN LEAD TIN LEAD
端子形式 NO LEAD THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
端子位置 QUAD DUAL DUAL DUAL
ime_peak_reflow_temperature_max__s_ NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
unity_gain_bw_nom 3000 kHz 3000 kHz 3000 kHz 3000 kHz
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