CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Operating Temperature Range . . . . . . . . . . . . . . . . -55
1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These param-
eters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization
based upon data from multiple production runs which reflect lot to lot and within lot variation.
2. Full Power Bandwidth guarantee based on Slew Rate measurement using FPBW = Slew Rate/(2πV
PEAK
).
3. Power Consumption based upon Quiescent Supply Current test maximum. (No load on outputs.).
4. Measured between 10% and 90% points.
CS (DC)
V
O
=
±10V
(20V
P-P
),
∆V
IO
≤
20µV
NOTES
1
1
1
1
1, 2
1
1, 4
1, 4
1
1
1
1, 3
1
1
1
TEMPERATURE
+25
o
C
+25
o
C
+25
o
C to +125
o
C
-55
o
C
+25
o
C
-55
o
C to +125
o
C
-55
o
C to +125
o
C
-55
o
C to +125
o
C
-55
o
C to +125
o
C
-55
o
C to +125
o
C
+25
o
C
-55
o
C to +125
o
C
+25
o
C
+25
o
C
+25
o
C
MIN
3
3
0.75
0.6
12
+1
-
-
-
-
-
-
120
120
120
MAX
-
-
-
-
-
-
400
400
40
40
86
240
-
-
-
UNITS
MHz
MHz
V/µs
V/µs
kHz
V/V
ns
ns
%
%
Ω
mW
dB
dB
dB
TABLE 4. ELECTRICAL TEST REQUIREMENTS
MIL-STD-883 TEST REQUIREMENTS
Interim Electrical Parameters (Pre Burn-In)
Final Electrical Test Parameters
Group A Test Requirements
Groups C and D Endpoints
NOTE:
1. PDA applies to Subgroup 1 only.
SUBGROUPS (SEE TABLES 1 AND 2)
1
1 (Note 1), 2, 3, 4, 5, 6, 7
1, 2, 3, 4, 5, 6, 7
1
Spec Number
4
511033-883
HA-5134/883
Die Characteristics
DIE DIMENSIONS:
91 x 114 x 19 mils
±
1 mils
2300 x 2900 x 483µm
±
25.4µm
METALLIZATION:
Type: Al, 1% Cu
Thickness: 16k
Å
±
2k
Å
GLASSIVATION:
Type: Nitride (Si3N4) over Silox (SIO2, 5% Phos.)
Silox Thickness: 12k
Å
±
2k
Å
Nitride Thickness: 3.5k
Å
±
1.5k
Å
WORST CASE CURRENT DENSITY:
2.5 x 10
5
A/cm
2
This device meets Glassivation Integrity Test Requirement
per MIL-STD-883 Method 2021 and MIL-I-38535 Paragraph 30.5.5.4.
SUBSTRATE POTENTIAL (Powered Up):
Unbiased
TRANSISTOR COUNT:
160
PROCESS:
Bipolar Dielectric Isolation
Metallization Mask Layout
HA-5134/883
-IN1
OUT1
OUT4
-IN4
+IN1
+IN4
V+
V-
+IN2
+IN3
-IN2
OUT2
OUT3
-IN3
All Intersil products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at website www.intersil.com/design/quality/iso.asp.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice.
Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reli-
able. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site