首页 > 器件类别 > 传感器/换能器

HAL621SF-K

Hall Effect Sensor, -3mT Min, 4mT Max, 0.16-0.28V, Rectangular, Surface Mount, PLASTIC, SOT-89B, 4 PIN

器件类别:传感器/换能器   

厂商名称:TDK(株式会社)

厂商官网:http://www.tdk.com

下载文档
器件参数
参数名称
属性值
厂商名称
TDK(株式会社)
包装说明
PLASTIC, SOT-89B, 4 PIN
Reach Compliance Code
compliant
Is Samacsys
N
其他特性
REVERSE VOLTAGE PROTECTION
主体宽度
2.55 mm
主体高度
1.15 mm
主体长度或直径
4.55 mm
外壳
PLASTIC
滞后
2 mT
最大磁场范围
4 mT
最小磁场范围
-3 mT
安装特点
SURFACE MOUNT
最大工作电流
5.4 mA
最大输出电流
20 mA
输出范围
0.16-0.28V
输出类型
ANALOG VOLTAGE
封装形状/形式
RECTANGULAR
电阻
220 Ω
传感器/换能器类型
MAGNETIC FIELD SENSOR,HALL EFFECT
表面贴装
YES
端接类型
SOLDER
Base Number Matches
1
文档预览
MICRONAS
HAL621, HAL629
Hall Effect Sensor Family
Edition Feb. 5, 2001
6251-109-4E
6251-504-2DS
MICRONAS
HAL62x
Contents
Page
3
3
3
4
4
4
4
4
5
6
6
6
6
7
7
8
9
12
12
14
16
16
16
16
16
Section
1.
1.1.
1.2.
1.3.
1.3.1.
1.4.
1.5.
1.6.
2.
3.
3.1.
3.2.
3.3.
3.4.
3.5.
3.6.
3.7.
4.
4.1.
4.2.
5.
5.1.
5.2.
5.3.
6.
Title
Introduction
Features
Family Overview
Marking Code
Special Marking of Prototype Parts
Operating Junction Temperature Range
Hall Sensor Package Codes
Solderability
Functional Description
Specifications
Outline Dimensions
Dimensions of Sensitive Area
Positions of Sensitive Areas
Absolute Maximum Ratings
Recommended Operating Conditions
Electrical Characteristics
Magnetic Characteristics Overview
Type Descriptions
HAL621
HAL629
Application Notes
Ambient Temperature
Start-up Behavior
EMC
Data Sheet History
2
Micronas
HAL62x
Hall Effect Sensor Family
in CMOS technology
Release Notes: Revision bars indicate significant
changes to the previous edition.
1. Introduction
Type
The HAL 62x family consists of different Hall switches
produced in CMOS technology. All sensors include a
temperature-compensated Hall plate with active offset
compensation, a filter, a comparator, and an open-drain
output transistor. The comparator compares the actual
magnetic flux through the Hall plate (Hall voltage) with
the fixed reference values (switching points). According-
ly, the output transistor is switched on or off. The sensors
of this family differ in their magnetic characteristics.
All sensors contain an enhanced internal signal proces-
sing for very high repeatability requirements of the out-
put signal. These sensors are the optimal solution for
CAM and crank sensor applications.
The active offset compensation leads to magnetic pa-
rameters which are robust against mechanical stress ef-
fects. In addition, the magnetic characteristics are
constant in the full supply voltage and temperature
range.
The sensors are designed for industrial and automotive
applications and operate with supply voltages from
4.2 V to 24 V in the ambient temperature range from
–40
°C
up to 150
°C.
All sensors are available in the SMD-package (SOT-89B)
and in the leaded version (TO-92UA).
1.1. Features:
– switching offset compensation at typically 360 kHz
– signal processing with chopper stabilized filter
– operates from 4.2 V to 24 V supply voltage
– operates with static magnetic fields and dynamic mag-
netic fields up to 15 kHz
– overvoltage protection at all pins
– reverse-voltage protection at V
DD
-pin
– magnetic characteristics are robust against mechani-
cal stress effects
– short-circuit protected open-drain output by thermal
shut down
– constant switching points over a wide supply voltage
range
– ideal sensor for applications in extreme automotive
and industrial environments
– EMC and ESD optimized design
621
629
Switching
Behavior
bipolar
unipolar
Sensitivity
very high
medium
see
Page
12
14
1.2. Family Overview
The types differ according to the magnetic flux density
values for the switching points and the mode of switch-
ing.
Note:
The HAL 629 is the improved successor of the
HAL 628 with the same magnetic characteristics.
Bipolar Switching Sensors:
The output turns low with the magnetic south pole on the
branded side of the package and turns high with the
magnetic north pole on the branded side. The output
state is not defined for all sensors if the magnetic field is
removed again. Some sensors will change the output
state and some sensors will not.
Unipolar Switching Sensors:
The output turns low with the magnetic south pole on the
branded side of the package and turns high if the mag-
netic field is removed. The sensor does not respond to
the magnetic north pole on the branded side.
Micronas
3
HAL62x
1.3. Marking Code
All Hall sensors have a marking on the package surface
(branded side). This marking includes the name of the
sensor and the temperature range.
Type
A
HAL621
HAL629
621A
629A
Temperature Range
K
621K
629K
E
621E
629E
V
DD
1
1.6. Solderability
all packages: according to IEC68-2-58
During soldering reflow processing and manual rework-
ing, a component body temperature of 260
°C
should not
be exceeded.
Components stored in the original packaging should
provide a shelf life of at least 12 months, starting from the
date code printed on the labels, even in environments as
extreme as 40
°C
and 90% relative humidity.
1.3.1. Special Marking of Prototype Parts
3
OUT
Prototype parts are coded with an underscore beneath
the temperature range letter on each IC. They may be
used for lab experiments and design-ins but are not in-
tended to be used for qualification tests or as production
parts.
1.4. Operating Junction Temperature Range
The Hall sensors from Micronas are specified to the chip
temperature (junction temperature T
J
).
A:
T
J
= –40
°C
to +170
°C
K:
T
J
= –40
°C
to +140
°C
E:
T
J
= –40
°C
to +100
°C
The relationship between ambient temperature (T
A
) and
junction temperature is explained in section 5.1. on page
16.
1.5. Hall Sensor Package Codes
HALXXXPA-T
Temperature Range: A, K, or E
Package: SF for SOT-89B
UA for TO-92UA
Type: 62x
Example:
HAL629UA-E
Type: 629
Package: TO-92UA
Temperature Range: T
J
= –40
°C
to +100
°C
Hall sensors are available in a wide variety of packaging
versions and quantities. For more detailed information,
please refer to the brochure: “Ordering Codes for Hall
Sensors”.
2
GND
Fig. 1–1:
Pin configuration
4
Micronas
HAL62x
2. Functional Description
The HAL 62x sensors are monolithic integrated circuits
which switch in response to magnetic fields. If a magnet-
ic flux perpendicular to the sensitive area is applied to
the sensor, the Hall plate generates a Hall voltage pro-
portional to this field.
The total voltage which appears at the Hall plate is in-
fluenced by offset voltages (e. g. caused by mechanical
stress). This offset voltage is compensated for by cyclic
commutation of the connections for current flow and
voltage measurement which makes the switching offset
compensation technique possible. Therefore, an inter-
nal oscillator provides a clock. The output voltage of the
switched Hall plate contains the Hall voltage as a DC or
low frequency signal and the offset voltage as an AC sig-
nal at the chopper frequency. The following chopper sta-
bilized low-pass filter supresses the offset voltage and
the output signal is the offset compensated Hall voltage.
The following comparator block compares this offset
compensated Hall voltage with the defined switching
points. The output transistor is switched on when the
magnetic field becomes larger than the operating point
B
ON
. It remains in this state as long as the magnetic field
does not fall below the release point B
OFF
. If the magnet-
ic field falls below B
OFF
, the transistor is switched off until
the magnetic field once again exceeds B
ON
. The built-in
hysteresis eliminates oscillation.
According to the principle of the circuit, there is a fixed
delay time t
delay
of typical 25
ms
from crossing the mag-
netic thresholds to the switching of the output (see Fig.
2–2).
The temperature-dependent bias regulates the supply
voltage of the Hall plates and adjusts the switching
points to the decreasing induction of magnets at higher
temperatures.
The output is short circuit protected by limiting high cur-
rents and by sensing overtemperature. Shunt protection
devices clamp voltage peaks at the Output-pin and V
DD
-
pin together with external series resistors. Reverse cur-
rent is limited at the V
DD
-pin by an internal series resistor
up to –15 V. No external reverse protection diode is
needed at the V
DD
-pin for reverse voltages ranging from
0 V to –15 V.
V
DD
1
Reverse
Voltage &
Overvoltage
Protection
HAL62x
Temperature
Dependent
Bias
Hysteresis
Control
Short Circuit &
Overvoltage
Protection
Hall Plate
Switch
LP
Comparator
Output
OUT
3
Clock
GND
2
Fig. 2–1:
HAL62x block diagram
B
B
ON
B
OFF
t
V
O
t
delay
t
Fig. 2–2:
Timing diagram
Micronas
5
查看更多>
【DigiKey“智造万物,快乐不停”创意大赛】2,I2S HAT驱动,并用python控制
模块的电路和焊接在第一部分已经完成,接下来是树莓派上驱动的适配。 首先按照以下方法接线: I2...
顺竿爬 DigiKey得捷技术专区
51单片机控制ISD1420实现选段播放功能的实现(C程序 电路图)
本帖最后由 paulhyde 于 2014-9-15 03:06 编辑 51单片机控制ISD14...
xfh168168 电子竞赛
多级二维整数小波变换的FPGA实现研究.pdf
多级二维整数小波变换的FPGA实现研究.pdf 多级二维整数小波变换的FPGA实现研究.pdf ...
zxopenljx EE_FPGA学习乐园
LM3S9B96 EM2扩展板用户指南
LM3S9B96 EM2扩展板用户指南 9B96的数据表坛子里有,就不重复了哈 LM3S9B96...
taburiss001 微控制器 MCU
如何根据电流的大小来选择取样电阻
1.永磁同步电动机简介 永磁式同步电动机结构简单、体积小、重量轻、损耗小、效率高,和直流电机相比,...
Jacktang DSP 与 ARM 处理器
求助一个关于arm串口读写的问题
我用的arm是at91rm9200 现在要通过串口向一个GPRS模块(gr64)发送AT命令 先定义...
sun00000 ARM技术
热门器件
热门资源推荐
器件捷径:
00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
需要登录后才可以下载。
登录取消