HAT2184WP
Silicon N Channel Power MOS FET
Power Switching
REJ03G0536-0500
Rev.5.00
Nov 27, 2006
Features
•
Low on-resistance
•
Low drive current
•
High density mounting
Outline
RENESAS Package code: PWSN0008DA-A
(Package name: WPAK)
5 6 7 8
5 6 7 8
D D D D
4 3 2 1
4
G
1, 2, 3
Source
4
Gate
5, 6, 7, 8 Drain
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch
≤
150°C
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)Note1
I
DR
I
DR (pulse)Note1
I
APNote3
E
ARNote3
Pch
Note2
θch-c
Tch
Tstg
Ratings
150
±30
14
28
14
28
14
14.7
25
5
150
–55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
Rev.5.00 Nov 27 2006 page 1 of 6
HAT2184WP
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Forward transfer admittance
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Notes: 4. Pulse test
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(off)
|y
fs
|
R
DS(on)
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Qg
Qgs
Qgd
V
DF
t
rr
Min
150
—
—
3.0
6
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
10
0.097
710
160
13
26
31
53
7
15
4.3
5.6
0.85
95
Max
—
1
±0.1
4.5
—
0.11
—
—
—
—
—
—
—
—
—
—
1.4
—
Unit
V
µA
µA
V
S
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
Test conditions
I
D
= 10 mA, V
GS
= 0
V
DS
= 150 V, V
GS
= 0
V
GS
=
±30
V, V
DS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 7 A, V
DS
= 10 V
Note4
I
D
= 7 A, V
GS
= 10 V
Note4
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
I
D
= 7 A
V
GS
= 10 V
R
L
= 10.7
Ω
Rg = 10
Ω
V
DD
= 120 V
V
GS
= 10 V
I
D
= 14 A
I
F
= 14 A, V
GS
= 0
Note4
I
F
= 14 A, V
GS
= 0
di
F
/dt = 100 A/µs
Rev.5.00 Nov 27 2006 page 2 of 6
HAT2184WP
Main Characteristics
Power vs. Temperature Derating
40
100
30
1m
Maximum Safe Operation Area
Channel Dissipation Pch (W)
Drain Current I
D
(A)
30
10
3
1
0.3
0.1
DC
(Tc Op
= 2 era
5
°
tion
C)
s
10
10
0
µ
µ
s
s
20
PW = 10 ms
(1shot)
10
0.03
Operation in this
0.01
area is limited by
R
DS(on)
0.003
0
50
100
150
200
0.001
1
Ta = 25°C
3
10
30
100
300
1000
Case Temperature Tc (°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
20
16
10 V
8V
6.5 V
20
7V
Pulse Test
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
Drain Current I
D
(A)
12
5.9 V
8
Drain Current I
D
(A)
16
12
Tc = 75°C
8
25°C
4
−25°C
4
V
GS
= 5.4 V
0
2
4
6
8
10
0
2
4
6
8
10
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source on State Resistance
R
DS(on)
(Ω)
Drain to Source Saturation Voltage
V
DS(on)
(V)
8
Pulse Test
1
0.5
V
GS
= 10 V
6
0.2
0.1
0.05
4
I
D
= 28 A
2
14 A
7A
20
0.02
0.01
1
3
10
30
Pulse Test
100
300
1000
0
4
8
12
16
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Rev.5.00 Nov 27 2006 page 3 of 6
HAT2184WP
Static Drain to Source on State Resistance
vs. Temperature
0.5
Static Drain to Source on State Resistance
R
DS(on)
(Ω)
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
100
30
Tc =
−25°C
10
3
1
0.3
0.1
0.1
25°C
75°C
V
GS
= 10 V
Pulse Test
0.4
I
D
= 28 A
0.3
14 A
0.2
7A
0.1
0
−25
V
DS
= 10 V
Pulse Test
0.3
1
3
10
30
100
0
25
50
75
100 125 150
Case Temperature Tc (°C)
Drain Current I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
Drain to Source Voltage V
DS
(V)
10000
3000
V
GS
= 0
f = 1 MHz
Ciss
240
Dynamic Input Characteristics
I
D
= 14 A
180
V
DS
120
8
V
DD
= 30 V
60 V
120 V
V
GS
12
1000
300
100
30
10
3
1
0
50
Coss
Crss
60
V
DD
= 120 V
60 V
30 V
4
8
12
16
4
100
150
0
0
20
Drain to Source Voltage V
DS
(V)
Gate Charge Qg (nC)
Switching Characteristics
1000
tf
100
td(on)
10
tr
1
0.1
tf
tr
20
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current I
DR
(A)
Switching Time t (ns)
V
GS
= 10 V, V
DD
= 75 V
PW = 5
µs,
duty
≤
1 %
R
G
= 10
Ω
td(off)
16
12
8
4
10 V
5V
V
GS
= 0,
−5
V
Pulse Test
0.3
1
3
10
30
100
0
0.4
0.8
1.2
1.6
2.0
Drain Current
I
D
(A)
Source to Drain Voltage V
SD
(V)
Rev.5.00 Nov 27 2006 page 4 of 6
Gate to Source Voltage V
GS
(V)
16
Capacitance C (pF)
HAT2184WP
Gate to Source Cutoff Voltage
vs. Case Temperature
5
Gate to Source Cutoff Voltage
V
GS(off)
(V)
V
DS
= 10 V
4
I
D
= 10 mA
1 mA
3
0.1 mA
2
1
0
-25
0
25
50
75
100 125 150
Case Temperature Tc (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ
s (t)
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
0.1
0.05
θ
ch - c(t) =
γ
s (t)
• θ
ch - c
θ
ch - c = 5°C/ W, Tc = 25°C
PDM
0.03
0.02
1
0.0
h
1s
D=
PW
T
PW
T
o
u
tp
lse
0.01
10
µ
100
µ
1m
10 m
100 m
1
10
Pulse Width PW (s)
Switching Time Test Circuit
Vin Monitor
D.U.T.
R
L
10
Ω
Vin
10 V
V
DD
= 75V
Vout
10%
10%
Vout
Monitor
Vin
10%
Waveform
90%
90%
td(on)
tr
90%
td(off)
tf
Rev.5.00 Nov 27 2006 page 5 of 6
