HAT2206C
Silicon N Channel MOS FET
Power Switching
REJ03G1238-0500
Rev.5.00
Jan 26, 2006
Features
•
Low on-resistance
R
DS (on)
= 65 mΩ typ. (at V
GS
= 4.5 V)
•
Low drive current.
•
High density mounting
•
1.8 V gate drive devices.
Outline
RENESAS Package code: PWSF0006JA-A
(Package name: CMFPAK-6)
Indexband
6
5
4
6
G
2 3 4 5
DD D D
1. Source
2. Drain
3. Drain
4. Drain
5. Drain
6. Gate
1
2
3
S
1
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Drain to source voltage
V
DSS
Gate to source voltage
V
GSS
Drain current
I
D
Drain peak current
I
D
(pulse)
Note1
Body - Drain diode reverse drain current
I
DR
Channel dissipation
Pch
Note 2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1%
2. When using the glass epoxy board. (FR4 40
×
40
×
1.6 mm)
Ratings
12
±8
2
8
2
830
150
–55 to +150
Unit
V
V
A
A
A
mW
°C
°C
Rev.5.00 Jan 26, 2006 page 1 of 6
HAT2206C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to Source breakdown voltage
Gate to Source breakdown voltage
Gate to Source leakage current
Drain to Source leakage current
Gate to Source cutoff voltage
Drain to Source on state resistance
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
V
GS(th)
R
DS(on)
Min
12
±8
—
—
0.3
—
—
—
3.5
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
65
81
113
5.5
260
46
22
3.5
0.7
0.7
4
7
43
3
0.8
Max
—
—
±10
1
1.2
85
114
170
—
—
—
—
—
—
—
—
—
—
—
1.1
Unit
V
V
µA
µA
V
mΩ
mΩ
mΩ
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
Test Conditions
I
D
= 10 mA, V
GS
= 0
I
G
=
±10 µA,
V
DS
= 0
V
GS
=
±6.4
V, V
DS
= 0
V
DS
= 10 V, V
GS
= 0
V
DS
= 10 V, I
D
= 1mA
I
D
= 1 A, V
GS
= 4.5 V
Note3
I
D
= 1 A, V
GS
= 2.5 V
Note3
I
D
= 1 A, V
GS
= 1.8 V
Note3
I
D
= 1 A, V
GS
= 10 V
Note3
V
GS
= 0, f = 1 MHz,
V
DS
= 10 V
V
GS
= 4.5 V, V
DS
= 10 V,
I
D
=2 A
V
GS
= 4.5V, I
D
= 1 A,
V
DD
= 10 V, R
L
= 10
Ω,
R
g
= 4.7
Ω
I
F
=2 A, V
GS
= 0
Note3
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to Source charge
Gate to Drain charge
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Body - Drain diode forward voltage
Notes: 3. Pulse test
|y
fs
|
Ciss
Coss
Crss
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
V
DF
Rev.5.00 Jan 26, 2006 page 2 of 6
HAT2206C
Main Characteristics
Power vs. Temperature Derating
1.6
100
Test Condition :
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm), Ta = 25°C
Maximum Safe Operation Area
Ta = 25°C,1shot pulse
When using the FR4 board.
10
µs
100
µs
Pch (W)
30
Drain Current I
D
(A)
1.2
10
3
1
PW
s
m
Channel Dissipation
0.8
1
0.3
0.1
0.03
=
10
s
m
n
io
at
er
0.4
Operation in this area
is limited by R
DS(on)
DC
op
0
50
100
150
200
0.01 0.03 0.1 0.3
1
3
10 30 100
Ambient Temperature
Ta (°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
10
2.5 V
4.5 V
10 V
6
1.8 V
2.2 V
Pulse Test
10
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
Tc = 75°C
25°C
–25°C
Drain Current I
D
(A)
Drain Current I
D
(A)
8
2.0 V
8
6
4
1.5 V
2
1.3 V
V
GS
= 1.0 V
0
2
4
6
8
10
4
2
0
1
2
3
4
5
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain to Source Voltage V
DS(on)
(mV)
400
Pulse Test
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source On State Resistance
R
DS(on)
(mΩ)
1000
Pulse Test
1.8 V
300
200
I
D
= 2.0 A
100
1.0 A
0.5 A
0
2
4
6
8
10
100
2.5 V
V
GS
= 4.5 V
10
0.1
1
10
100
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Rev.5.00 Jan 26, 2006 page 3 of 6
HAT2206C
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance |yfs| (S)
200
0.5 A
160
2A
1A
Static Drain to Source on State Resistance
R
DS(on)
(m
Ω
)
Forward Transfer Admittance vs.
Drain Current
100
30
Tc = –25°C
10
3
1
0.3
0.1
0.1
75°C
25°C
2A
120
1.8 V
0.5 A
2.5
V
1A
80
I
D
= 0.5, 1, 2 A
40
0
–25
V
GS
= 4.5 V
Pulse Test
0
25
50
75
100 125 150
V
DS
= 10 V
Pulse Test
0.3
1
3
10
30
100
Case Temperature
Tc
(°C)
Drain Current I
D
(A)
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
16
I
D
= 2 A
12
V
DD
= 12 V
10 V
5V
6
8
1000
300
100
30
10
3
1
0
Typical Capacitance vs.
Drain to Source Voltage
V
GS
= 0
f = 1 MHz
Ciss
Capacitance C (pF)
Coss
Crss
8
4
4
V
DD
= 12 V
10 V
5V
1
2
3
4
5
2
0
0
2
4
6
8
10
12
Gate Charge Qg (nc)
Drain to Source Voltage V
DS
(V)
Reverse Drain Current vs.
Source to Drain Voltage
10
1000
4.5 V
2.5V
Switching Characteristics
V
GS
= 4.5 V, V
DD
= 10 V
Rg = 4.7
Ω
Reverse Drain Current I
DR
(A)
8
Switching Time t (ns)
100
td(off)
6
V
GS
= 0, –5 V
tr
4
10
td(on)
tf
1
0.01 0.03
2
Pulse Test
0
0.4
0.8
1.2
1.6
2.0
0.1
0.3
1
3
10
Source to Drain Voltage V
SD
(V)
Drain Current I
D
(A)
Rev.5.00 Jan 26, 2006 page 4 of 6
HAT2206C
Switching Time Test Circuit
Waveform
Vin Monitor
D.U.T.
R
L
4.7
Ω
Vin
4.5 V
Vout
Monitor
Vin
Vout
V
DD
= 10 V
10%
10%
90%
10%
90%
td(on)
tr
90%
td(off)
tf
Rev.5.00 Jan 26, 2006 page 5 of 6
