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HB56D836SBR-6L

Fast Page DRAM Module, 8MX36, 60ns, CMOS, SIMM-72

器件类别:存储    存储   

厂商名称:Hitachi (Renesas )

厂商官网:http://www.renesas.com/eng/

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器件参数
参数名称
属性值
厂商名称
Hitachi (Renesas )
零件包装代码
SIMM
包装说明
SIMM, SSIM72
针数
72
Reach Compliance Code
unknown
ECCN代码
EAR99
Is Samacsys
N
访问模式
FAST PAGE
最长访问时间
60 ns
其他特性
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O 类型
COMMON
JESD-30 代码
R-XSMA-N72
内存密度
301989888 bit
内存集成电路类型
FAST PAGE DRAM MODULE
内存宽度
36
功能数量
1
端口数量
1
端子数量
72
字数
8388608 words
字数代码
8000000
工作模式
ASYNCHRONOUS
最高工作温度
70 °C
最低工作温度
组织
8MX36
输出特性
3-STATE
封装主体材料
UNSPECIFIED
封装代码
SIMM
封装等效代码
SSIM72
封装形状
RECTANGULAR
封装形式
MICROELECTRONIC ASSEMBLY
电源
5 V
认证状态
Not Qualified
刷新周期
2048
座面最大高度
31.75 mm
自我刷新
NO
最大待机电流
0.0032 A
最大压摆率
1.22 mA
最大供电电压 (Vsup)
5.25 V
最小供电电压 (Vsup)
4.75 V
标称供电电压 (Vsup)
5 V
表面贴装
NO
技术
CMOS
温度等级
COMMERCIAL
端子形式
NO LEAD
端子节距
1.27 mm
端子位置
SINGLE
Base Number Matches
1
文档预览
HB56D836BR/SBR Series,
HB56D436BR/SBR Series
8,388,608-word
×
36-bit High Density Dynamic RAM Module
4,194,304-word
×
36-bit High Density Dynamic RAM Module
ADE-203-729A (Z)
Rev.1.0
Feb. 20, 1997
Description
The HB56D836BR/SBR is a 8M
×
36 dynamic RAM module, mounted 16 pieces of 16-Mbit DRAM
(HM5117400) sealed in SOJ package and 8 pieces of 4-Mbit DRAM (HM514100) sealed in SOJ package.
The HB56D436BR/SBR is a 4M
×
36 dynamic RAM module, mounted 8 pieces of 16-Mbit DRAM
(HM5117400) sealed in SOJ package and 4 pieces of 4-Mbit DRAM (HM514100) sealed in SOJ package.
An outline of the HB56D836BR/SBR, HB56D436BR/SBR is 72-pin single in-line package. Therefore, the
HB56D836BR/SBR, HB56D436BR/SBR make high density mounting possible without surface mount
technology. The HB56D836BR/SBR, HB56D436BR/SBR provide common data inputs and outputs.
Decoupling capacitors are mounted on the module board.
Features
72-pin single in-line package
Outline: 107.95 mm (Length)
×
31.75/25.40 mm (Height)
×
9.14 mm (Thickness)
Lead pitch: 1.27 mm
Single 5 V (±5%) supply
High speed
Access time: t
RAC
= 60/70ns (max)
Low power dissipation
Active mode: 6.41/5.78 W (max) (HB56D836BR/SBR Series)
6.09/5.46 W (max) (HB56D436BR/SBR Series)
Standby mode (TTL): 252 mW (max) (HB56D836BR/SBR Series)
(TTL): 126 mW (max) (HB56D436BR/SBR Series)
(CMOS): 16.8 mW (max) (L-version) (HB56D836BR/SBR Series)
(CMOS): 8.4 mW (max) (L-version) (HB56D436BR/SBR Series)
Fast page mode capability
HB56D836BR/SBR Series, HB56D436BR/SBR Series
Refresh period
2048 refresh cycles: 32 ms
128 ms (L-version)
3 variations of refresh
RAS-only
refresh
CAS-before-RAS
refresh
Hidden refresh
TTL compatible
Ordering Information
Type No.
HB56D836BR-6
HB56D836BR-7
HB56D836BR-6L
HB56D836BR-7L
HB56D436BR-6
HB56D436BR-7
HB56D436BR-6L
HB56D436BR-7L
HB56D836SBR-6
HB56D836SBR-7
HB56D836SBR-6L
HB56D836SBR-7L
HB56D436SBR-6
HB56D436SBR-7
HB56D436SBR-6L
HB56D436SBR-7L
Access time
60 ns
70 ns
60 ns
70 ns
60 ns
70 ns
60 ns
70 ns
60 ns
70 ns
60 ns
70 ns
60 ns
70 ns
60 ns
70 ns
72-pin SIP socket type
Solder
Package
72-pin SIP socket type
Contact pad
Gold
2
HB56D836BR/SBR Series, HB56D436BR/SBR Series
Pin Arrangement
1Pin
36Pin
37Pin
72Pin
Pin No.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
Pin name
V
SS
DQ0
DQ18
DQ1
DQ19
DQ2
DQ20
DQ3
DQ21
V
CC
NC
A0
A1
A2
A3
A4
A5
A6
Pin No.
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
Pin name
A10
DQ4
DQ22
DQ5
DQ23
DQ6
DQ24
DQ7
DQ25
A7
NC
V
CC
A8
A9
RAS3
(NC)*
1
RAS2
DQ26
DQ8
Pin No.
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
Pin name
DQ17
DQ35
V
SS
CAS0
CAS2
CAS3
CAS1
RAS0
RAS1
(NC)*
2
NC
WE
NC
DQ9
DQ27
DQ10
DQ28
DQ11
DQ29
Pin No.
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
Pin name
DQ12
DQ30
DQ13
DQ31
V
CC
DQ32
DQ14
DQ33
DQ15
DQ34
DQ16
NC
PD1
PD2
PD3
PD4
NC
V
SS
Notes: 1.
RAS3:
HB56D836BR/SBR, NC: HB56D436BR/SBR
2.
RAS1:
HB56D836BR/SBR, NC: HB56D436BR/SBR
3
HB56D836BR/SBR Series, HB56D436BR/SBR Series
Pin Description
Pin name
A0 to A10
Function
Address inputs:
Row address:
Column address:
Refresh address:
DQ0 to DQ35
CAS0
to
CAS3
RAS0
to
RAS3
WE
V
CC
V
SS
PD1 to PD4
NC
Data-in/Data-out
Column address strobe
Row address strobe
Read/Write enable
Power supply
Ground
Presence detect pin
No connection
A0 to A10
A0 to A10
A0 to A10
Presence Detect Pin Arrangement
(HB56D836BR/SBR)
Function
Pin No.
67
68
69
70
Pin name
PD1
PD2
PD3
PD4
60 ns
NC
V
SS
NC
NC
70 ns
NC
V
SS
V
SS
NC
Presence Detect Pin Arrangement
(HB56D436BR/SBR)
Function
Pin No.
67
68
69
70
Pin name
PD1
PD2
PD3
PD4
60 ns
V
SS
NC
NC
NC
70 ns
V
SS
NC
V
SS
NC
4
HB56D836BR/SBR Series, HB56D436BR/SBR Series
Block Diagram
(HB56D836BR/SBR)
RAS0
CAS0
DQ0
DQ1
DQ2
DQ3
RAS1
I/O CAS RAS
I/O
I/O
D0
I/O
OE
I/O CAS RAS
I/O
I/O
D3
I/O
OE
Din CAS RAS
Dout M0
I/O CAS RAS
I/O
I/O
D4
I/O
OE
I/O CAS RAS
I/O
I/O
D7
I/O
OE
Din CAS RAS
Dout M2
I/O CAS RAS
I/O
I/O
D1
I/O
OE
I/O CAS RAS
I/O
I/O
D2
I/O
OE
Din CAS RAS
Dout M1
I/O CAS RAS
I/O
I/O
D5
I/O
OE
I/O CAS RAS
I/O
I/O
D6
I/O
OE
Din CAS RAS
Dout M3
RAS3
I/O CAS RAS
I/O
I/O
D8
I/O
OE
I/O CAS RAS
I/O
I/O
D11
I/O
OE
Din CAS RAS
Dout M4
I/O CAS RAS
I/O
I/O
D12
I/O
OE
I/O CAS RAS
I/O
I/O
D15
I/O
OE
Din CAS RAS
Dout M6
D0 – D15, M0 – M7
D0 – D15, M0 – M7
D0 – D15, M0 – M7
0.22
µF ×
14 pcs
D0 – D15, M0 – M7
I/O CAS RAS
I/O
I/O
D9
I/O
OE
I/O CAS RAS
I/O
I/O
D10
I/O
OE
Din CAS RAS
Dout M5
I/O CAS RAS
I/O
I/O
D13
I/O
OE
I/O CAS RAS
I/O
I/O
D14
I/O
OE
Din CAS RAS
Dout M7
DQ4
DQ5
DQ6
DQ7
DQ8
CAS1
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQ16
DQ17
RAS2
CAS2
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQ24
DQ25
DQ26
CAS3
DQ27
DQ28
DQ29
DQ30
DQ31
DQ32
DQ33
DQ34
DQ35
A0 – A10
WE
Note: D0 – D15 : HM5117400
M0 – M7 : HM514100
V
CC
V
SS
5
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