HB56SW464DB-6BL/7BL
4,194,304-word
×
64-bit High Density Dynamic RAM Module
ADE-203-651(Z)
Preliminary Rev. 0.0
Sep. 12, 1996
Description
The HB56SW464DB is a 4M
×
64 dynamic RAM Small Outline Dual In-line Memory Module
(S.O.DIMM), mounted 16 pieces of 16-Mbit DRAM (HM51W16405B) sealed in TCP package and 1 piece
of serial EEPROM (24C02) for Presence Detect (PD).
The HB56SW464DB offers Extended Data Out (EDO) Page Mode as a high speed access mode.
An outline of the HB56SW464DB is 144-pin Zig Zag Dual tabs socket type compact and thin package.
Therefore, the HB56SW464DB makes high density mounting possible without surface mount technology.
The HB56SW464DB provides common data inputs and outputs.
Decoupling capacitors are mounted beside each TCP on the module board.
Features
•
144-pin Zig Zag Dual tabs socket type
Lead pitch: 0.80 mm
•
Single 3.3 V (+0.3,
−0.15
V) supply
•
High speed
Access time: t
RAC
= 60/70 ns (max)
Access time: t
CAC
= 15/18 ns (max)
•
Low power dissipation
Active mode: 4.61/4.03 W (max)
Standby mode (TTL): 115.2 mW (max)
Standby mode (CMOS): 8.64 mW (max)
•
EDO mode capability
•
4,096 refresh cycles: 128 ms
•
2 variations of refresh
RAS-only
refresh
CAS-before-RAS
refresh
HB56SW464DB-6BL/7BL
•
Recommend Socket
Vendor
Parts No.
AMP
316310-1
Ordering Information
Type No.
HB56SW464DB-6BL
HB56SW464DB-7BL
Access time
60 ns
70 ns
Package
Small Outline DIMM (144-pin)
Contact pad
Gold
Pin Arrangement
—Front Side—
1 pin
2 pin
59 pin
60 pin
61 pin
62 pin
143 pin
144 pin
—Back Side—
Pin Arrangement
Front Side
Pin No.
1
3
5
7
9
11
13
15
17
Pin Name
V
SS
DQ0
DQ1
DQ2
DQ3
V
CC
DQ4
DQ5
DQ6
Pin No.
73
75
77
79
81
83
85
87
89
Pin Name
OE
V
SS
NC
NC
V
CC
DQ16
DQ17
DQ18
DQ19
Back Side
Pin No.
2
4
6
8
10
12
14
16
18
Pin Name
V
SS
DQ32
DQ33
DQ34
DQ35
V
CC
DQ36
DQ37
DQ38
Pin No.
74
76
78
80
82
84
86
88
90
Pin Name
NC
V
SS
NC
NC
V
CC
DQ48
DQ49
DQ50
DQ51
2
HB56SW464DB-6BL/7BL
Pin Arrangement
(cont)
Front Side
Pin No.
19
21
23
25
27
29
31
33
35
37
39
41
43
45
47
49
51
53
55
57
59
61
63
65
67
69
71
Pin Name
DQ7
V
SS
CE0
CE1
V
CC
A0
A1
A2
V
SS
DQ8
DQ9
DQ10
DQ11
V
CC
DQ12
DQ13
DQ14
DQ15
V
SS
NC
NC
NC
V
CC
NC
WE
RE0
NC
Pin No.
91
93
95
97
99
101
103
105
107
109
111
113
115
117
119
121
123
125
127
129
131
133
135
137
139
141
143
Pin Name
V
SS
DQ20
DQ21
DQ22
DQ23
V
CC
A6
A8
V
SS
A9
A10
V
CC
CE2
CE3
V
SS
DQ24
DQ25
DQ26
DQ27
V
CC
DQ28
DQ29
DQ30
DQ31
V
SS
SDA
V
CC
Back Side
Pin No.
20
22
24
26
28
30
32
34
36
38
40
42
44
46
48
50
52
54
56
58
60
62
64
66
68
70
72
Pin Name
DQ39
V
SS
CE4
CE5
V
CC
A3
A4
A5
V
SS
DQ40
DQ41
DQ42
DQ43
V
CC
DQ44
DQ45
DQ46
DQ47
V
SS
NC
NC
NC
V
CC
NC
NC
NC
NC
Pin No.
92
94
96
98
100
102
104
106
108
110
112
114
116
118
120
122
124
126
128
130
132
134
136
138
140
142
144
Pin Name
V
SS
DQ52
DQ53
DQ54
DQ55
V
CC
A7
A11
V
SS
NC
NC
V
CC
CE6
CE7
V
SS
DQ56
DQ57
DQ58
DQ59
V
CC
DQ60
DQ61
DQ62
DQ63
V
SS
SCL
V
CC
3
HB56SW464DB-6BL/7BL
Pin Description
Pin Name
A0 to A11
Function
Address Input
Row Address
Column Address
Refresh Address
Data-in/Data-out
Row Address Strobe (RAS)
Column Address Strobe (CAS)
Read/Write Enable
Output Enable
Power Supply
Ground
Serial Data for PD
Serial Clock for PD
No Connection
:
:
:
:
A0 to A11
A0 to A11
A0 to A9
A0 to A11
DQ0 to DQ63
RE0
CE0
to
CE7
WE
OE
V
CC
V
SS
SDA
SCL
NC
Note: Serial-PD Data are not protected.
4
HB56SW464DB-6BL/7BL
Serial-PD Matrix
Byte
Number
0
1
2
3
4
5
6
7
8
9
Function Described
Number Serial PD Bytes
Serial Memory
Bit 7
0
0
Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0 Notes
0
0
0
0
0
0
1
0
0
0
1
0
0
0
0
0
0
0
0
0
0
0
0
0
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
0
0
1
0
0
1
1
0
1
1
0
0
0
0
1
0
1
0
0
0
1
0
0
1
0
0
0
0
0
1
1
1
0
0
0
0
0
1
0
1
0
0
0
0
0
1
1
1
0
1
1
0
0
0
0
1
0
0
1
0
0
1
0
0
1
None
Extended
(31.3
µs)
13
256 Bytes
EDO
12
10
1
64
0 (+)
LVTTL
(3.3 V)
Fundamental Memory Type 0
Number of Rows
Number of Columns
Number of Banks
Data Width
Data Width (continued)
Voltage Interface
RAS
Access Time
CAS
Access Time
60 ns
70 ns
0
0
0
0
0
0
0
0
0
0
0
0
10
15 ns
18 ns
11
12
Error Detection/Correction
Refresh Period
Notes: 1: High Level (Serial Data)
0: Low Level (Serial Data)
5
