CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT GLASS PASSIVATED
HBM11PT
THRU
HBM18PT
HIGH EFFICIENCY SILICON RECTIFIER
VOLTAGE RANGE 50 - 1000 Volts CURRENT 1.0 Ampere
TURES
surface mounted applications
w forward voltage, high current capability
w leakage current
tallurgically bonded construction
stic package has Underwriters Laboratory
mmability Classification 94V-0
ss passivated junction
h temperature soldering guaranteed :
0
o
C/10 seconds at terminals
0.155 (3.94)
0.130 (3.30)
(1)
0.190 (4.75)
0.160 (4.06)
(2)
SMB
0.083 (2.11)
0.077 (1.96)
CHANICAL DATA
:
JEDEC SMB molded plastic
inals:
Solder plated, solderable per MIL-STD-750,
Method 2026
ity:
Indicated by cathode band
ht:
0.003 ounces, 0.093 gram
0.012 (0.305)
0.006 (0.152)
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
0.030 (0.76)
MUM RATINGS AND ELECTRICAL CHARACTERISTICS
o
s at 25 C ambient temperature unless otherwise specified.
phase, half wave, 60 H
Z
, resistive or inductive load.
pacitive load, derate current by 20%.
0.220 (5.59)
0.205 (5.21)
Dimensions in inches and (millimeters)
SMB
UNITS
Volts
Volts
Volts
Amps
ATINGES
( At T
A
= 25
o
C unless otherwise noted )
RATINGS
SYMBOL
V
RRM
V
RMS
V
DC
I
O
HBM11PT HBM12PT HBM13PT HBM14PT HBM15PT HBM16PT HBM17PT HBM18PT
ecurrent Peak Reverse Voltage
50
35
50
100
70
100
200
140
200
300
210
300
1.0
400
280
400
600
420
600
800
560
800
1000
700
1000
MS Voltage
C Blocking Voltage
verage Forward Rectified Current T
L
= 110
o
C
rd Surge Current 8.3 ms single half sine-wave
I
FSM
30
Amps
ed on rated load (JEDEC method)
C
J
T
J
, T
STG
15
-65 to +150
12
pF
o
tion Capacitance (Note 1)
nd Storage Temperature Range
C
CHARACTERISTICS
( At T
A
= 25
o
C unless otherwise noted )
CHARACTERISTICS
SYMBOL
V
F
HBM11PT HBM12PT HBM13PT HBM14PT HBM15PT HBM16PT HBM17PT HBM18PT
UNITS
Volts
uAmps
uAmps
stantaneous Forward Voltage at 1.0 A DC
1.0
1.3
5.0
1.5
1.7
C Reverse Current
Blocking Voltage at T
A
= 25
o
C
ull Load Reverse Current Average,
T
A
= 55
o
C
everse Recovery Time (Note 2)
I
R
100
trr
50
70
nSec
RATING CHARACTERISTIC CURVES ( HBM11PT THRU HBM18PT )
50
NONINDUCTIVE
10
NONINDUCTIVE
trr
+0.5A
(-)
0
PULSE
GENERATOR
(NOTE 2)
-0.25A
AVERAGE FORWARD CURRENT, ( A )
FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
FIG. 2 - TYPICAL FORWARD
CURRENT DERATING CURVE
1.5
(+)
25 Vdc
(approx)
(-)
D.U.T
1.0
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
1
NON-
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
(+)
-1.0A
0.5
NOTES: 1. Rise Time = 7 ns max. Input Impedance =
1 megohm. 22 pF.
2. Rise Time = 10 ns max. Source Impedlance=
50 ohms.
1cm
SET TIME BASE FOR
10/20 nS/cm
0
0
25 50 75 100 125 150 175
LEAD TEMPERATURE (
O
C )
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
100
INSTANTANEOUS FORWARD CURRENT, ( A )
INSTANTANEOUS REVERSE CURRENT, (uA)
10
FIG. 4 - TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
13P
T
BM
~H
M1
4PT
T
J
=100
o
C
1.0
T
J
=25
o
C
0.1
.1
.01
.01
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE, ( % )
.001
0
.2
.4
.6
.8
1.0
1.2 1.4
1.6
INSTANTANEOUS FORWARD VOLTAGE, ( V )
1.8
FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
PEAK FORWARD SURGE CURRENT, ( A )
35
JUNCTION CAPACITANCE, ( pF )
30
25
20
15
10
5
0
1
2
5
10
20
NUMBER OF CYCLES AT 60 Hz
50
100
8.3ms Single Half Sine-Wave
(JEDEC Method)
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
200
100
60
40
20
10
6
4
2
1
.1
.2
.4
1.0
2
4
10
20
REVERSE VOLTAGE, ( V )
40
100
T
J
=25
o
C
HBM1
HBM
11PT
~H
BM15
PT
6PT~H
BM18P
HB
T
J
=25
o
C
T
HB
M1
HB
7P
10
HB
T~
T
J
=125 C
1.0
M1
1PT
~H
M1
o
HB
M
Pulse Width = 300uS
1% Duty Cycle
15P
T
BM
T
6P
18
PT
传感器
