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HDBL107G C1

桥式整流器 1.0 Amp 1000 Volt 50 Amp IFSM

器件类别:半导体    分立半导体    二极管与整流器    桥式整流器   

厂商名称:Taiwan Semiconductor

厂商官网:http://www.taiwansemi.com/

器件标准:

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器件参数
参数名称
属性值
厂商名称
Taiwan Semiconductor
产品种类
桥式整流器
类型
Single Phase Bridge
安装风格
Through Hole
封装 / 箱体
DBL-4
If - 正向电流
1 A
峰值反向电压
1000 V
Vf - 正向电压
1.7 V
最大浪涌电流
50 A
最小工作温度
- 55 C
最大工作温度
+ 150 C
长度
8.51 mm
宽度
6.5 mm
高度
2.6 mm
封装
Tube
产品
Bridge Rectifiers
技术
Si
Ir - 反向电流
5 uA
工厂包装数量
100
Vr - 反向电压
1000 V
文档预览
HDBL101G - HDBL107G
Taiwan Semiconductor
CREAT BY ART
1A, 50V - 1000V Glass Passivated High Efficient Bridge Rectifiers
FEATURES
- Glass passivated junction
- Ideal for printed circuit board
- Reliable low cost construction utilizing molded plastic technique
- High surge current capability
- UL Recognized File # E-326854
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
DBL
MECHANICAL DATA
Case:
Molded plastic body
Molding compound, UL flammability classification rating 94V-0
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity:
Polarity as marked on the body
Weight:
0.36 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Rating for fusing (t<8.3ms)
Maximum instantaneous forward voltage (Note 1)
I
F
= 1 A
Maximum reverse current @ rated V
R
Maximum reverse recovery time (Note 2)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse Test with PW=300μs,1% Duty Cycle
Notes 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
T
J
=25°C
T
J
=125°C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
V
F
I
R
t
rr
R
θJL
R
θJA
T
J
T
STG
50
15
40
- 55 to + 150
- 55 to + 150
1.0
HDBL
101G
50
35
50
HDBL
102G
100
70
100
HDBL
103G
200
140
200
HDBL
104G
400
280
400
1
50
10.3
1.3
5
500
75
1.7
HDBL
105G
600
420
600
HDBL
106G
800
560
800
HDBL
107G
1000
700
1000
UNIT
V
V
V
A
A
A
2
s
V
μA
ns
°C/W
°C
°C
Document Number: DS_D1311010
Version: F15
HDBL101G - HDBL107G
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
HDBL10xG
(Note 1)
*: Optional available
PACKING CODE
H
PACKING
CODE
C1
PACKING CODE
SUFFIX
G
(*)
PACKAGE
DBL
PACKING
50 / TUBE
Note 1: "x" defines voltage from 50V (HDBL101G) to 1000V (HDBL107G)
EXAMPLE
PREFERRED P/N
HDBL107GHC1G
PART NO.
HDBL107G
PART NO.
SUFFIX
H
PACKING CODE
C1
PACKING CODE
SUFFIX
G
DESCRIPTION
AEC-Q101 qualified
Green compound
RATINGS AND CHARACTERISTICS CURVES
(T
A
=25°C unless otherwise noted)
FIG. 2 TYPICAL FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT
(A)
10
HDBL101G -
HDBL104G
HDBL105G
FIG.1 FORWARD CURRENT DERATING CURVE
1.5
AVERAGE FORWARD CURRENT .
(A)
1
1
0.5
RESISTIVE OR
INDUCTION LOAD
0
0
20
40
60
80
100
120
(
°
C)
140
160
HDBL106G -
HDBL107G
0.1
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
FORWARD VOLTAGE (V)
AMBIENT TEMPERATURE
FIG. 3 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
PEAK FORWARD SURGE CURRENT (A)
70
60
50
40
30
20
10
0
1
10
NUMBER OF CYCLES AT 60 Hz
100
8.3ms Single Half Sine Wave
INSTANTANEOUS REVERSE CURRENT (μA)
1000
FIG. 4 TYPICAL REVERSE CHARACTERISTICS
100
10
T
J
=125°C
1
T
J
=25°C
0.1
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Document Number: DS_D1311010
Version: F15
HDBL101G - HDBL107G
Taiwan Semiconductor
FIG. 5 TYPICAL JUNCTION CAPACITANCE
70
60
CAPACITANCE (pF)
A
50
40
30
20
10
0
0.1
1
10
REVERSE VOLTAGE (V)
100
1000
HDBL106G -
HDBL107G
HDBL101G -
HDBL105G
f=1.0MHz
Vsig=50mVp-p
PACKAGE OUTLINE DIMENSIONS
DBL
DIM.
A
B
C
D
E
F
G
H
I
J
K
L
Unit (mm)
Min
6.20
7.24
8.12
2.40
0.89
0.46
5.00
1.39
1.27
3.81
0.22
7.600
Max
6.50
8.00
8.51
2.60
1.14
0.58
5.20
1.90
2.03
4.69
0.33
8.90
Unit (inch)
Min
0.244
0.285
0.320
0.094
0.035
0.018
0.197
0.055
0.050
0.150
0.009
0.299
Max
0.256
0.315
0.335
0.102
0.045
0.023
0.205
0.075
0.080
0.185
0.013
0.350
MARKING DIAGRAM
P/N
G
YW
F
= Specific Device Code
= Green Compound
= Date Code
= Factory Code
Document Number: DS_D1311010
Version: F15
HDBL101G - HDBL107G
Taiwan Semiconductor
CREAT BY ART
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_D1311010
Version: F15
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
Taiwan Semiconductor
:
HDBL101G HDBL102G HDBL103G HDBL104G HDBL105G HDBL106G HDBL107G HDBL101GHC1
HDBL103GHC1G HDBL107GHC1 HDBL103GHC1 HDBL106GHC1G HDBL102G C1 HDBL104G C1G HDBL101G
C1G HDBL103G C1G HDBL106GHC1 HDBL106G C1G HDBL104GHC1G HDBL102GHC1G HDBL107G C1G
HDBL105GHC1 HDBL105G C1G HDBL102GHC1 HDBL104GHC1 HDBL104G C1 HDBL101GHC1G
HDBL107GHC1G HDBL105GHC1G HDBL102G C1G HDBL101G C1 HDBL103G C1 HDBL106G C1 HDBL107G C1
HDBL105G C1
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参数对比
与HDBL107G C1相近的元器件有:HDBL106GHC1、HDBL106GHC1G、HDBL105G C1、HDBL101G C1G。描述及对比如下:
型号 HDBL107G C1 HDBL106GHC1 HDBL106GHC1G HDBL105G C1 HDBL101G C1G
描述 桥式整流器 1.0 Amp 1000 Volt 50 Amp IFSM 桥式整流器 1A,800V,G.P.,DIP,BRIDGE HIGH EFFICIENT RECTIFIER 桥式整流器 1A,800V,G.P.,DIP,BRIDGE HIGH EFFICIENT RECTIFIER 桥式整流器 1.0 Amp 600 Volt 50 Amp IFSM 桥式整流器 1A,50V,G.P.,DIP,BRIDGE HIGH EFFICIENT RECTIFIER
厂商名称 Taiwan Semiconductor Taiwan Semiconductor - Taiwan Semiconductor Taiwan Semiconductor
产品种类 桥式整流器 桥式整流器 - 桥式整流器 桥式整流器
类型 Single Phase Bridge Single Phase Bridge - Single Phase Bridge Single Phase Bridge
安装风格 Through Hole Through Hole - Through Hole Through Hole
封装 / 箱体 DBL-4 DBL-4 - DBL-4 DBL-4
If - 正向电流 1 A 1 A - 1 A 1 A
峰值反向电压 1000 V 800 V - 600 V 50 V
Vf - 正向电压 1.7 V 1.7 V - 1.7 V 1 V
最大浪涌电流 50 A 50 A - 50 A 50 A
最小工作温度 - 55 C - 55 C - - 55 C - 55 C
最大工作温度 + 150 C + 150 C - + 150 C + 150 C
长度 8.51 mm 8.51 mm - 8.51 mm 8.51 mm
宽度 6.5 mm 6.5 mm - 6.5 mm 6.5 mm
高度 2.6 mm 2.6 mm - 2.6 mm 2.6 mm
封装 Tube Bulk - Tube Bulk
产品 Bridge Rectifiers Bridge Rectifiers - Bridge Rectifiers Bridge Rectifiers
技术 Si Si - Si Si
Ir - 反向电流 5 uA 5 uA - 5 uA 5 uA
工厂包装数量 100 100 - 100 100
Vr - 反向电压 1000 V 800 V - 600 V 50 V
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