INTEGRATED CIRCUITS
DATA SHEET
For a complete data sheet, please also download:
•
The IC04 LOCMOS HE4000B Logic
Family Specifications HEF, HEC
•
The IC04 LOCMOS HE4000B Logic
Package Outlines/Information HEF, HEC
HEF4001UB
gates
Quadruple 2-input NOR gate
Product specification
File under Integrated Circuits, IC04
January 1995
Philips Semiconductors
Product specification
Quadruple 2-input NOR gate
DESCRIPTION
The HEF4001UB is a quadruple 2-input NOR gate. This
unbuffered single stage version provides a direct
implementation of the NOR function. The output
impedance and output transition time depends on the input
voltage and input rise and fall times applied.
HEF4001UB
gates
Fig.2 Pinning diagram.
HEF4001UBP(N): 14-lead DIL; plastic
(SOT27-1)
HEF4001UBD(F): 14-lead DIL; ceramic (cerdip)
(SOT73)
HEF4001UBT(D): 14-lead SO; plastic
(SOT108-1)
( ): Package Designator North America
Fig.1 Functional diagram.
FAMILY DATA, I
DD
LIMITS category GATES
See Family Specifications for V
IH
/V
IL
unbuffered stages
Fig.3
Schematic diagram (one gate). The
splitting-up of the p-transistors provide
identical inputs.
January 1995
2
Philips Semiconductors
Product specification
Quadruple 2-input NOR gate
AC CHARACTERISTICS
V
SS
= 0 V; T
amb
= 25
°C;
C
L
= 50 pF; input transition times
≤
20 ns
V
DD
V
Propagation delays
I
n
→
O
n
HIGH to LOW
5
10
15
5
LOW to HIGH
Output transition times
HIGH to LOW
10
15
5
10
15
5
LOW to HIGH
Input capacitance
10
15
C
IN
t
TLH
t
THL
t
PLH
t
PHL
65
30
25
40
20
15
75
30
20
60
30
20
−
130
60
50
80
40
30
150
60
40
110
60
40
10
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
pF
30 ns
17 ns
15 ns
13 ns
9 ns
7 ns
15 ns
6 ns
SYMBOL
TYP.
MAX.
HEF4001UB
gates
TYPICAL EXTRAPOLATION
FORMULA
+
(0,70 ns/pF) C
L
+
(0,27 ns/pF) C
L
+
(0,20 ns/pF) C
L
+
(0,55 ns/pF) C
L
+
(0,23 ns/pF) C
L
+
(0,16 ns/pF) C
L
+
(1,20 ns/pF) C
L
+
(0,48 ns/pF) C
L
4 ns
+
(0,32 ns/pF) C
L
10 ns
+
(1,00 ns/pF) C
L
9 ns
+
(0,42 ns/pF) C
L
6 ns
+
(0,28 ns/pF) C
L
V
DD
V
Dynamic power
dissipation per
package (P)
5
10
15
TYPICAL FORMULA FOR P (µW)
500 f
i
+
∑
(f
o
C
L
)
×
V
DD2
5000 f
i
+
∑
(f
o
C
L
)
×
V
DD2
30 000 f
i
+
∑
(f
o
C
L
)
×
V
DD2
where
f
i
= input freq. (MHz)
f
o
= output freq. (MHz)
C
L
= load capacitance (pF)
∑(f
o
C
L
) = sum of outputs
V
DD
= supply voltage (V)
January 1995
3
Philips Semiconductors
Product specification
Quadruple 2-input NOR gate
HEF4001UB
gates
Fig.4
Typical transfer characteristics; one input, the other
input connected to V
SS
;
V
O
;
– – – I
D
(drain current);
I
O
= 0; V
DD
= 5 V.
Fig.5
Typical transfer characteristics; one input, the other
input connected to V
SS
;
V
O
;
– – – I
D
(drain current);
I
O
= 0; V
DD
= 10 V.
Fig.6
Typical transfer characteristics; one input, the other
input connected to V
SS
;
V
O
;
– – – I
D
(drain current);
I
O
= 0; V
DD
= 15 V.
January 1995
4
Philips Semiconductors
Product specification
Quadruple 2-input NOR gate
HEF4001UB
gates
Fig.7 Test set-up for measuring forward transconductance g
fs
= di
o
/dv
i
at v
o
is constant (see also graph Fig.8).
A : average,
B : average + 2 s,
C : average
−
2 s, in where ‘s’ is the observed standard deviation.
Fig.8 Typical forward transconductance g
fs
as a function of the supply voltage at T
amb
= 25
°C.
January 1995
5
