型号
- 型号
- 关键词
| 型号 | HEF4750VD,112 | 933520180112 | HEF4750VF |
|---|---|---|---|
| 描述 | HEF4750VD | IC PLL FREQUENCY SYNTHESIZER, 1000 MHz, CDIP28, CERAMIC, SOT-135, DIP-28, PLL or Frequency Synthesis Circuit | IC PLL FREQUENCY SYNTHESIZER, 1000 MHz, CDIP28, CERAMIC, SOT-135, DIP-28, PLL or Frequency Synthesis Circuit |
| 厂商名称 | NXP(恩智浦) | NXP(恩智浦) | NXP(恩智浦) |
| 零件包装代码 | DIP | DIP | DIP |
| 包装说明 | CERAMIC, SOT-135, DIP-28 | DIP, | DIP, |
| 针数 | 28 | 28 | 28 |
| Reach Compliance Code | compliant | compliant | unknown |
| 模拟集成电路 - 其他类型 | PLL FREQUENCY SYNTHESIZER | PLL FREQUENCY SYNTHESIZER | PLL FREQUENCY SYNTHESIZER |
| JESD-30 代码 | R-GDIP-T28 | R-GDIP-T28 | R-GDIP-T28 |
| 功能数量 | 1 | 1 | 1 |
| 端子数量 | 28 | 28 | 28 |
| 最高工作温度 | 85 °C | 85 °C | 85 °C |
| 最低工作温度 | -40 °C | -40 °C | -40 °C |
| 封装主体材料 | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED |
| 封装代码 | DIP | DIP | DIP |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | IN-LINE | IN-LINE |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified |
| 座面最大高度 | 5.84 mm | 5.84 mm | 5.84 mm |
| 最大供电电压 (Vsup) | 10.5 V | 10.5 V | 10.5 V |
| 最小供电电压 (Vsup) | 9.5 V | 9.5 V | 9.5 V |
| 标称供电电压 (Vsup) | 10 V | 10 V | 10 V |
| 表面贴装 | NO | NO | NO |
| 技术 | CMOS | CMOS | CMOS |
| 温度等级 | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子节距 | 2.54 mm | 2.54 mm | 2.54 mm |
| 端子位置 | DUAL | DUAL | DUAL |
| 宽度 | 15.24 mm | 15.24 mm | 15.24 mm |
| JESD-609代码 | e3/e4 | - | e3/e4 |
| 端子面层 | TIN/NICKEL PALLADIUM GOLD | - | TIN/NICKEL PALLADIUM GOLD |