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HER1001GD

Rectifier Diode, 10A, 50V V(RRM),

器件类别:分立半导体    二极管   

厂商名称:Taiwan Semiconductor

厂商官网:http://www.taiwansemi.com/

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Taiwan Semiconductor
Reach Compliance Code
compliant
ECCN代码
EAR99
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
1 V
湿度敏感等级
1
最大非重复峰值正向电流
125 A
最高工作温度
150 °C
最大输出电流
10 A
最大重复峰值反向电压
50 V
最大反向恢复时间
0.05 µs
表面贴装
NO
文档预览
HER1001G
THRU
HER1008G
10.0 AMPS. Glass Passivated High Efficient Rectifiers
Voltage Range
50 to 1000 Volts
Current
10.0 Amperes
Features
a
a
a
a
a
a
a
a
a
TO-220
Low forward voltage drop
High current capability
High reliability
High surge current capability
Mechanical Data
Case: TO-220 molded plastic
Epoxy: UL 94V-O rate flame retardant
Terminals: Leads solderable per MIL-STD-
Terminals:
202, Method 208 guaranteed
Polarity: As marked
High temperature soldering guaranteed:
250°C/10 seconds .16”,(4.06mm) from
case.
Weight: 2.24 grams
Dimensions in inches and (millimeters)
a
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
@T
C
= 100°C
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated Load
(JEDEC method )
Maximum Instantaneous Forward Voltage
@ 5.0A
Maximum DC Reverse Current @ T
A
=25°C
at Rated DC Blocking Voltage @ T
A
=125°C
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
Typical Thermal Resistance RÛJC (Note 3)
HER
HER
HER
HER
HER
HER
HER
HER
1001G 1002G 1003G 1004G 1005G 1006G 1007G 1008G
Units
V
V
V
A
A
50
35
50
100
70
100
200 300
140 210
200 300
400
280
400
600 800 1000
420 560 700
600 800 1000
10.0
125
1.0
1.3
10.0
400
50
80
80
50
1.7
V
uA
uA
nS
pF
°C/W
°C
°C
3.0
Operating Temperature Range T
J
-65 to +150
Storage Temperature Range T
STG
-65 to +150
Notes: 1. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Notes:
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.
Notes:
3. Thermal Resistance from Junction to Case Per Leg Mounted on Heatsink.
- 192 -
RATINGS AND CHARACTERISTIC CURVES (HER1001G THRU HER1008G)
FIG.1- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50W
NONINDUCTIVE
10W
NONINDUCTIVE
trr
+0.5A
DUT
(-)
PULSE
GENERATOR
(NOTE 2)
1W
NON
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
(+)
0
-0.25A
(+)
50Vdc
(approx)
(-)
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
-1.0A
1cm
SET TIME BASE FOR
5/ 10ns/ cm
AVERAGE FORWARD CURRENT. (A)
10
8
6
4
2
0
FIG.2- MAXIMUM FORWARD CURRENT DERATING
CURVE
FIG.3- TYPICAL REVERSE CHARACTERISTICS
1000
INSTANTANEOUS REVERSE CURRENT. ( A)
100
Tj=125
0
C
10
0
50
100
o
150
LEAD TEMPERATURE. ( C)
Tj=25
0
C
PEAK FORWARD SURGE CURRENT. (A)
150
125
100
FIG.4- MAXIMUM NON-REPETITIVE FORWARD SURGE
CURRENT
1
0.1
8.3ms Single Half Sine Wave
JEDEC Method
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
75
50
FIG.6- TYPICAL FORWARD CHARACTERISTICS
100
30
10
1
2
5
10
20
50
100
INSTANTANEOUS FORWARD CURRENT. (A)
25
NUMBER OF CYCLES AT 60Hz
FIG.5- TYPICAL JUNCTION CAPACITANCE
240
200
3.0
1.0
CAPACITANCE.(pF)
160
120
80
40
0
1
2
HE
R1
HE
0.3
0.1
R1
00
1G
~H
00
ER
6G
~H
100
HE
R1
00
1G
~H
ER
10
04
G
1
ER
00
8G
00
R1
H
HE
G~
06
0
R1
HE
5G
5G
0.03
.01
.4
.6
.8
1.0
ER
10
08
G
Tj=25 C
PULSE WIDTH-300 S
1% DUTY CYCLE
0
1.2
1.4
1.6
1.8
5
10
20
50
100
200
500
FORWARD VOLTAGE. (V)
REVERSE VOLTAGE. (V)
- 193 -
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参数对比
与HER1001GD相近的元器件有:HER1003GA、HER1005GA、HER1005GD、HER1007GD、HER1007GA、HER1004GA、HER1006GA、HER1002GD、HER1002GA。描述及对比如下:
型号 HER1001GD HER1003GA HER1005GA HER1005GD HER1007GD HER1007GA HER1004GA HER1006GA HER1002GD HER1002GA
描述 Rectifier Diode, 10A, 50V V(RRM), Rectifier Diode, 10A, 200V V(RRM), Rectifier Diode, 10A, 400V V(RRM), Rectifier Diode, 10A, 400V V(RRM), Rectifier Diode, 10A, 800V V(RRM), Rectifier Diode, 10A, 800V V(RRM), Rectifier Diode, 10A, 300V V(RRM), Rectifier Diode, 10A, 600V V(RRM), Rectifier Diode, 10A, 100V V(RRM), Rectifier Diode, 10A, 100V V(RRM),
是否Rohs认证 符合 符合 符合 符合 符合 符合 符合 符合 符合 符合
Reach Compliance Code compliant unknown unknown compliant compliant unknown unknown unknown compliant unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
最大正向电压 (VF) 1 V 1 V 1.3 V 1.3 V 1.7 V 1.7 V 1 V 1.7 V 1 V 1 V
湿度敏感等级 1 1 1 1 1 1 1 1 1 1
最大非重复峰值正向电流 125 A 125 A 125 A 125 A 125 A 125 A 125 A 125 A 125 A 125 A
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
最大输出电流 10 A 10 A 10 A 10 A 10 A 10 A 10 A 10 A 10 A 10 A
最大重复峰值反向电压 50 V 200 V 400 V 400 V 800 V 800 V 300 V 600 V 100 V 100 V
最大反向恢复时间 0.05 µs 0.05 µs 0.05 µs 0.05 µs 0.08 µs 0.08 µs 0.05 µs 0.08 µs 0.05 µs 0.05 µs
表面贴装 NO NO NO NO NO NO NO NO NO NO
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