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HER107

1 A, SILICON, SIGNAL DIODE, DO-41

器件类别:半导体    分立半导体   

厂商名称:重庆平伟实业

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CHONGQING PINGYANG ELECTRONICS CO.,LTD.
HER101 THRU HER108
HIGH EFFICIENCY PLASTIC RECTIFIER
VOLTAGE:50-1000V
CURRENT:1.0A
FEATURES
·Low
power loss, high efficiency
·Low
leakage
·Low
forward voltage
·High
current capability
·High
speed switching
·High
surge capability
·High
reliability
DO-41
1.0(25.4)
MIN.
.205(5.2)
.166(4.2)
1.0(25.4)
MIN.
.034(0.9)
.028(0.7)
DIA.
DIA.
MECHANICAL DATA
·Case:
Molded plastic
·Epoxy:
UL94V-0 rate flame retardant
·Lead:
MIL-STD- 202E, Method 208 guaranteed
·Polarity:Color
band denotes cathode end
·Mounting
position:
Any
·Weight:
0.33 grams
.107(2.7)
.080(2.0)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz,resistive or inductive load.
For capacitive load, derate current by 20%.
HER
HER
SYMBOL
101
102
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward rectified Current
at T
A
=50°C
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rate load (JEDEC
method)
Maximum Instantaneous forward Voltage at 1.0A
DC
Maximum DC Reverse Current at Rated DC
Blocking Voltage T
A
=25°C
V
RRM
V
RMS
V
DC
I
o
I
FSM
V
F
1.0
50
35
50
100
70
100
HER
103
200
140
200
HER
104
300
210
300
HER
105
400
280
400
HER
106
600
420
600
HER
107
800
560
800
HER
units
108
1000
700
1000
V
V
V
A
A
1.0
30
1.3
5.0
1.7
V
Maximum Full Load Reverse Current Full Cycle
Average,.375”(9.5mm) lead length at T
L
=55°C
t
rr
Maximum Reverse Recovery Time (Note 1)
C
J
Typical Junction Capacitance (Note 2)
Notes: 1.Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0 volts
I
R
µA
100
50
15
75
12
nS
pF
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参数对比
与HER107相近的元器件有:HER108、HER106、HER105、HER104、HER103、HER102、HER101。描述及对比如下:
型号 HER107 HER108 HER106 HER105 HER104 HER103 HER102 HER101
描述 1 A, SILICON, SIGNAL DIODE, DO-41 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41 1 A, 300 V, SILICON, SIGNAL DIODE, DO-41 SIGNAL DIODE 1 A, 100 V, SILICON, SIGNAL DIODE, DO-41 1 A, SILICON, SIGNAL DIODE, DO-41
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