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HER301G-B

Rectifier Diode, 1 Phase, 1 Element, 3A, 50V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2

器件类别:分立半导体    二极管   

厂商名称:Rectron

器件标准:  

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器件:HER301G-B

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
Rectron
零件包装代码
DO-201AD
包装说明
PLASTIC PACKAGE-2
针数
2
Reach Compliance Code
not_compliant
ECCN代码
EAR99
其他特性
HIGH RELIABILITY, LOW POWER LOSS
应用
EFFICIENCY
外壳连接
ISOLATED
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JEDEC-95代码
DO-201AD
JESD-30 代码
O-PALF-W2
JESD-609代码
e3
最大非重复峰值正向电流
200 A
元件数量
1
相数
1
端子数量
2
最高工作温度
150 °C
最低工作温度
-55 °C
最大输出电流
3 A
封装主体材料
PLASTIC/EPOXY
封装形状
ROUND
封装形式
LONG FORM
峰值回流温度(摄氏度)
265
认证状态
Not Qualified
最大重复峰值反向电压
50 V
最大反向恢复时间
0.05 µs
表面贴装
NO
端子面层
Matte Tin (Sn)
端子形式
WIRE
端子位置
AXIAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
文档预览
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
HER301G
THRU
HER308G
HIGH EFFICIENCY
GLASS PASSIVATED RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Ampere
FEATURES
*
*
*
*
*
*
*
*
Glass passivated junction
Low power loss, high efficiency
Low leakage
Low forward voltage drop
High current capability
High speed switching
High reliability
High current surge
DO-201AD
MECHANICAL DATA
*
*
*
*
*
Case: Molded plastic
Epoxy: Device has UL flammability classification 94V-O
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight: 1.20 grams
1.0 (25.4)
MIN.
.052 (1.3)
DIA.
.048 (1.2)
.375 (9.5)
.335 (8.5)
.220 (5.6)
DIA.
.197 (5.0)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
o
1.0 (25.4)
MIN.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
(At T
A
= 25
o
C unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
o
at T
A
= 50 C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range
SYMBOL
V
RRM
V
RMS
V
DC
I
O
I
FSM
C
J
T
J
, T
STG
200
70
-55 to + 150
HER301G HER302G HER303G HER304G HER305G HER306G HER307G HER308G
UNITS
50
35
50
100
70
100
200
140
200
300
210
300
3.0
400
280
400
600
420
600
800
560
800
1000
700
1000
Volts
Volts
Volts
Amps
150
50
Amps
pF
0
C
ELECTRICAL CHARACTERISTICS
(At T
A
= 25 C unless otherwise noted)
CHARACTERISTICS
Maximum Instantaneous Forward Voltage at 3.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage T
A
= 25
o
C
Maximum Full Load Reverse Current
Average, Full Cycle .375” (9.5mm) lead length at T
L
= 55
o
C
Maximum Reverse Recovery Time (Note 1)
NOTES : 1. Test Conditions: I
F
= 0.5A, I
R
= -1.0A, I
RR
=- 0.25A
2. Measured at 1 MH
Z
and applied reverse voltage of 4.0 volts
SYMBOL
V
F
HER301G HER302G HER303G HER304G HER305G HER306G HER307G HER308G
UNITS
o
1.0
1.3
10
1.7
Volts
uAmps
uAmps
I
R
150
trr
50
75
nSec
2003-1
RATING AND CHARACTERISTIC CURVES ( HER301G THRU HER308G )
AVERAGE FORWARD CURENT, (A)
FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
NONINDUCTIVE
10
NONINDUCTIVE
trr
+0.5A
(-)
PULSE
GENERATOR
(NOTE 2)
FIG. 2 - TYPICAL FORWARD
CURRENT DERATING CURVE
6
5
4
3
2
1
0
0
25 50 75 100 125 150 175
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
(+)
25 Vdc
(approx)
(-)
D.U.T
0
-0.25A
1
NON-
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
(+)
-1.0A
NOTES:
1 Rise Time = 7ns max. Input Impedance =
1 megohm. 22pF.
2. Rise Time = 10ns max. Source Impedance =
50 ohms.
1cm
SET TIME BASE FOR
10/20 ns/cm
AMBIENT TEMPERATURE (
)
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS REVERSE CURRENT, (uA)
INSTANTANEOUS FORWARD CURRENT, (A)
FIG. 4 - TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
100
1000
100
10
0/2
0
0V
300
/40
0V
50/
10
TJ = 100
1.0
TJ = 25
0.1
.1
Pulse Width = 300uS
1% Duty Cycle
.01
0
20
40
60
80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
.01
0
.2 .4 .6 .8 1.0 1.2 1.4 1.6 1.8
INSTANTANEOUS FORWARD VOLTAGE, (V)
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
PEAK FORWARD SURGE CURRENT, (A)
FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
300
JUNCTION CAPACITANCE, (pF)
8.3ms Single Half Sine-Wave
(JEDEC Method)
200
100
60
40
20
10
6
4
2
1
.1
.2 .4
1.0 2 4
10 20 40
REVERSE VOLTAGE, ( V )
100
TJ = 25
HER
3
HE
60
1.0
TJ = 25
0/8
R30
1G~
00
HE
/10
10
00
R30
V
TJ = 150
5G
200
06G
~HE
R30
8
G
100
HER301G~HER305G
HER306G~HER308G
0
1
10
100
1000
NUMBER OF CYCLES AT 60Hz
RECTRON
查看更多>
参数对比
与HER301G-B相近的元器件有:HER303G-B。描述及对比如下:
型号 HER301G-B HER303G-B
描述 Rectifier Diode, 1 Phase, 1 Element, 3A, 50V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2 Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
是否无铅 不含铅 不含铅
是否Rohs认证 符合 符合
厂商名称 Rectron Rectron
零件包装代码 DO-201AD DO-201AD
包装说明 PLASTIC PACKAGE-2 PLASTIC PACKAGE-2
针数 2 2
Reach Compliance Code not_compliant not_compliant
ECCN代码 EAR99 EAR99
其他特性 HIGH RELIABILITY, LOW POWER LOSS HIGH RELIABILITY, LOW POWER LOSS
应用 EFFICIENCY EFFICIENCY
外壳连接 ISOLATED ISOLATED
配置 SINGLE SINGLE
二极管元件材料 SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE
JEDEC-95代码 DO-201AD DO-201AD
JESD-30 代码 O-PALF-W2 O-PALF-W2
JESD-609代码 e3 e3
最大非重复峰值正向电流 200 A 200 A
元件数量 1 1
相数 1 1
端子数量 2 2
最高工作温度 150 °C 150 °C
最低工作温度 -55 °C -55 °C
最大输出电流 3 A 3 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 ROUND ROUND
封装形式 LONG FORM LONG FORM
峰值回流温度(摄氏度) 265 265
认证状态 Not Qualified Not Qualified
最大重复峰值反向电压 50 V 200 V
最大反向恢复时间 0.05 µs 0.05 µs
表面贴装 NO NO
端子面层 Matte Tin (Sn) Matte Tin (Sn)
端子形式 WIRE WIRE
端子位置 AXIAL AXIAL
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED
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