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HER502

RECTIFIER DIODE
整流二极管

器件类别:半导体    分立半导体   

厂商名称:DIOTEC

厂商官网:http://www.diotec.com/

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器件参数
参数名称
属性值
状态
ACTIVE
二极管类型
整流二极管
文档预览
HER501 THRU HER508
Reverse Voltage - 50 to 1000 Volts
HIGH EFFICIENT SILICON RECTIFIER
Forward Current - 5.0 Ampere
FEATURES
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Ultra fast switching for high efficiency
Low reverse leakage
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds,0.375
(9.5mm) lead length,
5 lbs. (2.3kg) tension
DO-201AD
1.0 (25.4)
MIN.
0.220(5.6)
0.197(5.0)
DIA.
0.375(9.5)
0.285(7.2)
MECHANICAL DATA
Case:
JEDEC DO-201AD molded plastic body
Terminals:
Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:0.04
ounce, 1.10 grams
1.0 (25.4)
MIN.
0.052(1.3)
0.048(1.2)
DIA.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
@T
A
= 55°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
Reverse Recovery Time (Note 2)
Typical Junction Capacitance (Note 3)
Operating Temperature Range
Storage Temperature Range
@I
F
= 5.0A
@T
A
= 25°C
@T
A
= 100°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
HER
501
50
35
HER
502
100
70
HER
503
200
140
HER
504
300
210
5.0
HER
505
400
280
HER
506
600
420
HER
507
800
560
HER
508
1000
700
Unit
V
V
A
I
FSM
V
FM
I
RM
t
rr
C
j
T
j
T
STG
50
75
1.0
150
1.3
10
100
75
50
-65 to +150
-65 to +150
1.7
A
V
µA
nS
pF
°C
°C
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
HER501 THRU HER508
RATINGS AND CHARACTERISTIC CURVES
8
100
Single phase half wave
Resistive or Inductive load
I
(AV)
, AVERAGE FWD RECTIFIED CURRENT (A)
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
HER501 - 504
HER505
6
10
4
1.0
HER506 - HER508
2
0.1
T
j
= 25
°
C
Pulse width = 300
µ
s
2% duty cycle
0
0
25
50
75
100
125
150
175
T
A
, AMBIENT TEMPERATURE (
°
C)
Fig. 1 Forward Current Derating Curve
0.01
0.6
1.0
1.4
1.8
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
200
I
FSM
, PEAK FORWARD SURGE CURRENT (A)
8.3ms single half
sine-wave
1000
100
C
j
, CAPACITANCE (pF)
HER501 - HER505
100
HER506 - HER508
10
1
10
NUMBER OF CYCLES AT 60Hz
Fig. 3 Peak Forward Surge Current
100
10
1
10
V
R
, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
t
rr
+0.5A
50
NI (Non-inductive)
10
NI
100
Device
Under
Test
(-)
Pulse
Generator
(Note 2)
0A
-0.25A
(+)
50V DC
Approx
(-)
1.0
NI
Oscilloscope
(Note 1)
(+)
Notes:
1. Rise Time = 7.0ns max. Input Impedance = 1.0M
, 22pF.
2. Rise Time = 10ns max. Input Impedance = 50
.
-1.0A
Set time base for 5/10ns/cm
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
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参数对比
与HER502相近的元器件有:HER501、HER503、HER504、HER505、HER506、HER507、HER508。描述及对比如下:
型号 HER502 HER501 HER503 HER504 HER505 HER506 HER507 HER508
描述 RECTIFIER DIODE 5 A, SILICON, RECTIFIER DIODE, DO-201AD 5 A, SILICON, RECTIFIER DIODE, DO-201AD 5 A, SILICON, RECTIFIER DIODE, DO-201AD 5 A, SILICON, RECTIFIER DIODE, DO-201AD RECTIFIER DIODE 5 A, SILICON, RECTIFIER DIODE, DO-201AD 5 A, SILICON, RECTIFIER DIODE, DO-201AD
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