HERAF803G,HERAF803G pdf中文资料,HERAF803G引脚图,HERAF803G电路-Datasheet-电子工程世界

器件参数

参数名称

属性值

是否Rohs认证

符合

厂商名称

Taiwan Semiconductor

包装说明

R-PSFM-T2

Reach Compliance Code

compli

其他特性

FREE WHEELING DIODE, HIGH RELIABILITY, UL RECOGNIZED

应用

EFFICIENCY

外壳连接

ISOLATED

配置

SINGLE

二极管元件材料

SILICON

二极管类型

RECTIFIER DIODE

最大正向电压 (VF)

1 V

JEDEC-95代码

TO-220AC

JESD-30 代码

R-PSFM-T2

湿度敏感等级

最大非重复峰值正向电流

150 A

元件数量

相数

端子数量

最高工作温度

150 °C

最低工作温度

-65 °C

最大输出电流

8 A

封装主体材料

PLASTIC/EPOXY

封装形状

RECTANGULAR

封装形式

FLANGE MOUNT

认证状态

Not Qualified

最大重复峰值反向电压

200 V

最大反向恢复时间

0.05 µs

表面贴装

端子面层

Pure Tin (Sn)

端子形式

THROUGH-HOLE

端子位置

SINGLE

文档预览

HERAF801G - HERAF808G

Isolated 8.0 AMPS. Glass Passivated High Efficient Rectifiers

ITO-220AC

.185(4.7)

.173(4.4)

.124(3.16)

.118(3.00)

.406(10.3)

.390(9.90)

.134(3.4)DIA

.113(3.0)DIA

.272(6.9)

.248(6.3)

.112(2.85)

.100(2.55)

Features

Glass passivated chip junction.

High efficiency, Low VF

High current capability

High reliability

High surge current capability

For use in low voltage, high frequency inventor, free

wheeling, and polarity protection application.

.606(15.5)

.583(14.8)

.063(1.6)

MAX

.161(4.1)

.146(3.7)

.110(2.8)

.098(2.5)

.030(0.76)

.020(0.50)

.055(1.4)

.043(1.1)

.035(0.9)

.020(0.5)

.071(1.8)

MAX

.543(13.8)

.512(13.2)

Mechanical Data

Cases: ITO-220AC molded plastic

Epoxy: UL 94V0 rate flame retardant

Terminals: Pure tin plated, lead free solderable per

MIL-STD-202, Method 208 guaranteed

Polarity: As marked

High temperature soldering guaranteed:

260 C/ 0.25” (6.35mm) from case for 10

seconds

Mounting torque: 5 in – 1bs. Max.

Weight: 2.24 grams

.100(2.55)

PIN 1

PIN 2

CASE

Case Positive

Dimensions in inches and (millimeters)

Maximum Rating and Electrical Characteristics

Rating at 25

C ambient temperature unless otherwise specified.

Single phase, half wave 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

Type Number

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Rectified

Current .375”(9.5mm) Lead Length

=100 C

Peak Forward Surge Current, 8.3 ms Single

Half Sine-wave Superimposed on Rated

Load (JEDEC method )

Maximum Instantaneous Forward Voltage

@8.0A

Maximum DC Reverse Current @ T

=25

at Rated DC Blocking Voltage @ T

=125

Maximum Reverse Recovery Time (Note 1)

Typical Junction Capacitance

Operating Temperature Range

( Note 2 )

Typical Thermal resistance (Note 3)

Symbol

RRM

RMS

(AV)

FSM

Trr

HERAF HERAF HERAF HERAF HERAF HERAF HERAF HERAF

801G

802G

803G

804G

805G

806G

807G

808G

Units

100

200

140

200

300

210

300

400

280

400

600

420

600

800 1000

560 700

800 1000

8.0

150

1.0

1.3

400

2.0

-65 to +150

1.7

C/W

θJC

Storage Temperature Range

STG

Notes:

1. Reverse Recovery Test Conditions: I

=0.5A, I

=1.0A, I

=0.25A

2. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.

3. Mounted on Heatsink Size of 2 in x 3 in x 0.25 in Al-Plate.

Version: A06

RATINGS AND CHARACTERISTIC CURVES (HERAF801G THRU HERAF808G)

FIG.1- MAXIMUM FORWARD CURRENT DERATING

CURVE

AVERAGE FORWARD CURRENT. (A)

FIG.2- TYPICAL REVERSE CHARACTERISTICS

1000

INSTANTANEOUS REVERSE CURRENT. ( A)

100

Tj=125

Tj=75

CASE TEMPERATURE. ( C)

100

150

PEAK FORWARD SURGE CURRENT. (A)

FIG.3- MAXIMUM NON-REPETITIVE FORWARD

SURGE CURRENT

150

Tj=25

120

8.3ms Single Half Sine Wave

JEDEC Method

0.1

100

120

140

PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)

FIG.5- TYPICAL FORWARD CHARACTERISTICS

100

INSTANTANEOUS FORWARD CURRENT. (A)

NUMBER OF CYCLES AT 60Hz

100

FIG.4- TYPICAL JUNCTION CAPACITANCE

180

150

CAPACITANCE.(pF)

120

0.3

0.1

01G

05G

0.03

0.01

0.4

100

200

500

1000

0.6

REVERSE VOLTAGE. (V)

0.8

1.0

1.2

1.4

FORWARD VOLTAGE. (V)

1.6

1.8

FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM

NONINDUCTIVE

trr

+0.5A

DUT

(-)

PULSE

GENERATOR

(NOTE 2)

NON

INDUCTIVE

OSCILLOSCOPE

(NOTE 1)

(+)

-0.25A

(+)

50Vdc

(approx)

(-)

NOTES: 1. Rise Time=7ns max. Input Impedance=

1 megohm 22pf

2. Rise Time=10ns max. Sourse Impedance=

50 ohms

-1.0A

1cm

SET TIME BASE FOR

5/ 10ns/ cm

Version: A06

参数对比

与HERAF803G相近的元器件有：HERAF801G_1、HERAF807G、HERAF806G、HERAF805G。描述及对比如下：

型号	HERAF803G	HERAF801G_1	HERAF807G	HERAF806G	HERAF805G
描述	8 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AC	8 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AC	8 A, 800 V, SILICON, RECTIFIER DIODE, TO-220AC	8 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC	8 A, 400 V, SILICON, RECTIFIER DIODE, TO-220AC
是否Rohs认证	符合	-	符合	符合	符合
包装说明	R-PSFM-T2	-	GREEN, PLASTIC, ITO-220AC, 2 PIN	GREEN, PLASTIC, ITO-220AC, 2 PIN	R-PSFM-T2
Reach Compliance Code	compli	-	compli	compli	compli
其他特性	FREE WHEELING DIODE, HIGH RELIABILITY, UL RECOGNIZED	-	FREE WHEELING DIODE, HIGH RELIABILITY, UL RECOGNIZED	FREE WHEELING DIODE, HIGH RELIABILITY, UL RECOGNIZED	FREE WHEELING DIODE, HIGH RELIABILITY, UL RECOGNIZED
应用	EFFICIENCY	-	EFFICIENCY	EFFICIENCY	EFFICIENCY
外壳连接	ISOLATED	-	ISOLATED	ISOLATED	ISOLATED
配置	SINGLE	-	SINGLE	SINGLE	SINGLE
二极管元件材料	SILICON	-	SILICON	SILICON	SILICON
二极管类型	RECTIFIER DIODE	-	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
最大正向电压 (VF)	1 V	-	1.7 V	1.7 V	1.3 V
JEDEC-95代码	TO-220AC	-	TO-220AC	TO-220AC	TO-220AC
JESD-30 代码	R-PSFM-T2	-	R-PSFM-T2	R-PSFM-T2	R-PSFM-T2
湿度敏感等级	1	-	1	1	1
最大非重复峰值正向电流	150 A	-	150 A	150 A	150 A
元件数量	1	-	1	1	1
相数	1	-	1	1	1
端子数量	2	-	2	2	2
最高工作温度	150 °C	-	150 °C	150 °C	150 °C
最低工作温度	-65 °C	-	-65 °C	-65 °C	-65 °C
最大输出电流	8 A	-	8 A	8 A	8 A
封装主体材料	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	FLANGE MOUNT	-	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
认证状态	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified
最大重复峰值反向电压	200 V	-	800 V	600 V	400 V
最大反向恢复时间	0.05 µs	-	0.08 µs	0.08 µs	0.05 µs
表面贴装	NO	-	NO	NO	NO
端子面层	Pure Tin (Sn)	-	Pure Tin (Sn)	Pure Tin (Sn)	Pure Tin (Sn)
端子形式	THROUGH-HOLE	-	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
端子位置	SINGLE	-	SINGLE	SINGLE	SINGLE