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HERF1002GHC0G

Rectifier Diode, 1 Phase, 2 Element, 5A, 100V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN

器件类别:分立半导体    二极管   

厂商名称:Taiwan Semiconductor

厂商官网:http://www.taiwansemi.com/

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器件参数
参数名称
属性值
厂商名称
Taiwan Semiconductor
包装说明
ITO-220AB, 3 PIN
Reach Compliance Code
compliant
ECCN代码
EAR99
其他特性
LOW POWER LOSS
应用
EFFICIENCY
外壳连接
ISOLATED
配置
COMMON CATHODE, 2 ELEMENTS
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
1 V
JEDEC-95代码
TO-220AB
JESD-30 代码
R-PSFM-T3
最大非重复峰值正向电流
125 A
元件数量
2
相数
1
端子数量
3
最高工作温度
150 °C
最低工作温度
-55 °C
最大输出电流
5 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
FLANGE MOUNT
参考标准
AEC-Q101
最大重复峰值反向电压
100 V
最大反向电流
10 µA
最大反向恢复时间
0.05 µs
表面贴装
NO
端子形式
THROUGH-HOLE
端子位置
SINGLE
文档预览
HERF1001G - HERF1008G
Taiwan Semiconductor
CREAT BY ART
10A, 50V - 1000V Isolated Glass Passivated High Efficient Rectifiers
FEATURES
- High efficiency, low VF
- High current capability
- High surge current capability
- Low power loss
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
ITO-220AB
MECHANICAL DATA
Case:
ITO-220AB
Molding compound, UL flammability classification rating 94V-0
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity:
As marked
Mounting torque:
0.56 Nm max.
Weight:
1.82 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
HERF HERF HERF HERF HERF HERF HERF HERF
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage
@5A
Maximum reverse current @ rated V
R
Maximum reverse recovery time (Note 2)
Typical junction capacitance (Note 3)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Test conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A.
Note 3: Measured at 1 MHz and applied reverse voltage of 4.0 V DC.
(Note 1)
T
J
=25°C
T
J
=125°C
SYMBOL 1001
G
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
t
rr
C
J
R
θJC
T
J
T
STG
50
60
3.0
- 55 to +150
- 55 to +150
1.0
10
400
80
40
50
35
50
1002
G
100
70
100
1003
G
200
140
200
1004
G
300
210
300
10
125
1.3
1.7
1005
G
400
280
400
1006
G
600
420
600
1007
G
800
560
800
1008
G
1000
700
1000
V
V
V
A
A
V
μA
ns
pF
°C/W
°C
°C
UNIT
Version: H1511
HERF1001G - HERF1008G
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
HERF100xG
(Note 1)
*: Optional available
PART NO.
SUFFIX
H
PACKING
CODE
C0
PACKING CODE
SUFFIX
G
(*)
PACKAGE
ITO-220AB
PACKING
50 / Tube
Note 1: "x" defines voltage from 50V (HERF1001G) to 1000V (HERF1008G)
EXAMPLE
EXAMPLE P/N
HERF1008GHC0G
PART NO.
HERF1008G
PART NO.
SUFFIX
H
PACKING CODE
C0
PACKING CODE
SUFFIX
G
DESCRIPTION
AEC-Q101 qualified
Green compound
RATINGS AND CHARACTERISTICS CURVES
(T
A
=25°C unless otherwise noted)
FIG.1 FORWARD CURRENT DERATING CURVE
12
10
8
6
4
2
0
0
25
50
75
100
125
150
Resistive or
inductive load
with heat sink
INSTANTANEOUS REVERSE CURRENT (μA)
1000
FIG. 2 TYPICAL REVERSE CHARACTERISTICS
AVERAGE FORWARD CURRENT (A)
100
T
J
=125°C
10
T
J
=75°C
1
T
J
=25°C
0.1
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
CASE TEMPERATURE (
°
C)
FIG. 3 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
250
PEAK FORWARD SURGE CURRENT (A)
100
FIG. 4 TYPICAL FORWARD CHARACTERISTICS
8.3ms single half sine wave
200
INSTANTANEOUS FORWARD CURRENT (A)
HERF1001G-1004G
10
150
100
1
50
HERF1005G
0
1
10
100
HERF1006G-1008G
0.1
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
FORWARD VOLTAGE (V)
NUMBER OF CYCLES AT 60 Hz
Version: H1511
HERF1001G - HERF1008G
Taiwan Semiconductor
FIG. 5 TYPICAL JUNCTION CAPACITANCE
240
200
CAPACITANCE (pF)
160
120
80
40
0
1
10
100
REVERSE VOLTAGE (V)
1000
f=1.0MHz
Vsig=50mVp-p
HERF1001G-1005G
HERF1006G-1008G
PACKAGE OUTLINE DIMENSIONS
ITO-220AB
DIM.
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
Unit (mm)
Min
4.30
2.50
2.30
0.46
6.30
9.60
3.00
0.95
0.50
2.40
14.80
-
12.60
-
2.41
Max
4.70
3.16
2.96
0.76
6.90
10.30
3.40
1.45
0.90
3.20
15.50
4.10
13.80
1.80
2.67
Unit (inch)
Min
0.169
0.098
0.091
0.018
0.248
0.378
0.118
0.037
0.020
0.094
0.583
-
0.496
-
0.095
Max
0.185
0.124
0.117
0.030
0.272
0.406
0.134
0.057
0.035
0.126
0.610
0.161
0.543
0.071
0.105
MARKING DIAGRAM
P/N
G
YWW
F
= Specific Device Code
= Green Compound
= Date Code
= Factory Code
Version: H1511
HERF1001G - HERF1008G
Taiwan Semiconductor
CREAT BY ART
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Version: H1511
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