Hexfred Die in Wafer Form
Features
GEN3 Hexfred Technology
Low V
F
Low I
RR
Low t
RR
Soft Reverse Recovery
Benchmark Efficiency for Motor Control Applications
Rugged Transient Performance
Low EMI
Excellent Current Sharing in Parallel Operation
HF43D120ACE
PD - 94566
Benefits
1200V
I
F(nom)
=35A
V
F(typ)
= 1.90V @ I
F(nom)
@ 25°C
Motor Control Antiparallel Diode
125mm Wafer
Electrical Characteristics (Wafer Form)
Parameter
Description
V
F
Forward Voltage Drop
B
VR
Reverse Breakdown Voltage
I
RM
Reverse Leakage Current
Guaranteed (min, max)
1.20V min, 1.61V max
1200V min
20µA max
Test Conditions
I
C
= 10A, T
J
= 25°C
T
J
= 25°C, I
R
= 150µA
T
J
= 25°C, V
R
= 1200V
Mechanical Data
Nominal Backmetal Composition, (Thickness)
Nominal Front Metal Composition, (Thickness)
Dimensions
Wafer Diameter
Wafer Thickness, Tolerance
Relevant Die Mechanical Dwg. Number
Minimum Street Width
Reject Ink Dot Size
Ink Dot Location
Recommended Storage Environment
Recommended Die Attach Conditions
Cr- Ni - Ag, (1kA - 4kA - 6kA)
99% Al/1% Si, (3µm)
0.220' x 0.220"
125mm, with std. < 100 > flat
310µm, +/-15µm
01-5506
100µm
0.25mm diameter minimum
Consistent throughout same wafer lot
Store in original container, in dessicated
nitrogen, with no contamination
For optimum electrical results, die attach
temperature should not exceed 300°C
Note:
Die Outline
1. ALL DIMENSIONS ARE SHOW IN MILLIMETERS [INCHES].
2. CONTROLLING DIMENSION: [INCH].
3. DIMENSIONAL TOLERANCES:
BONDING PADS:
WIDTH
&
LENGTH
OVERALL DIE:
WIDTH
&
LENGTH
4. WIP DIE # 718905
WIP WAFER # 718893
5. 32 kGy (kiloGray)
< 0.635 TOLERANCE = +/- 0.013
< [.0250] TOLERANCE - +/- [-0005]
> 0.635 TOLERANCE = +/- 0.025
> [.0250] TOLERANCE = +/- [.0010]
< 1.270 TOLERANCE = +/- 0.102
< [.050] TOLERANCE = +/- [.004]
> 1.270 TOLERANCE = +/- 0.203
> [.050] TOLERANCE = +/- [.008]
www.irf.com
Page 1
10/16/02
Hexfred Die in Wafer Form
Fig. 1 - Typical Diode Recovery
V
CC
=600V; Rg=4.7
Ω
; T
J
=125°C;
L=200µH; Driver=IRGPS60B120KD
100
0
-100
Voltage (V)
-200
-300
-400
-500
-600
-700
-800
-0.30
0.00
0.30
time (µs)
0.60
0.90
Current
40
30
20
0
-10
-20
-30
-40
-50
1.20
Current (A)
VCC
HF43D120ACE
10
Voltage
Fig. 2 - Typical Diode Forw ard
Characteristic
tp=300µs
160
Fig. 3 - Diode Recovery Circuit
DUT
140
120
100
-40°C
25°C
125°C
L
DRIVER
IF (A)
80
60
40
20
0
0
1
2
3
VF (V)
4
5
6
Rg
www.irf.com
Page 2
10/16/02
微控制器 MCU
