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HFA30TA60CSTRR

Rectifiers 600 Volt 2x15 Amp Common Cathode

器件类别:分立半导体    二极管   

厂商名称:Vishay(威世)

厂商官网:http://www.vishay.com

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器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
Vishay(威世)
包装说明
R-PSSO-G2
Reach Compliance Code
unknown
应用
GENERAL PURPOSE
外壳连接
CATHODE
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JESD-30 代码
R-PSSO-G2
元件数量
1
相数
1
端子数量
2
最大输出电流
30 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
认证状态
Not Qualified
最大反向恢复时间
0.06 µs
表面贴装
YES
端子形式
GULL WING
端子位置
SINGLE
处于峰值回流温度下的最长时间
NOT SPECIFIED
文档预览
VS-HFA30TA60CSPbF
www.vishay.com
Vishay Semiconductors
HEXFRED
®
,
Ultrafast Soft Recovery Diode, 2 x 15 A
FEATURES
Ultrafast and ultrasoft recovery
Very low I
RRM
and Q
rr
Specified at operating conditions
Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• AEC-Q101 qualified
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
TO-263AB (D
2
PAK)
Base
common
cathode
2
BENEFITS
Reduced RFI and EMI
Reduced power loss in diode and switching transistor
Higher frequency operation
Reduced snubbing
Reduced parts count
1
Anode
2
3
Anode
Common
cathode
DESCRIPTION
VS-HFA30TA60CS is a state of the art center tap ultrafast
recovery diode. Employing the latest in epitaxial
construction and advanced processing techniques it
features a superb combination of characteristics which
result in performance which is unsurpassed by any rectifier
previously available. With basic ratings of 600 V and 15 A
per leg continuous current, the VS-HFA30TA60CS is
especially well suited for use as the companion diode for
IGBTs and MOSFETs. In addition to ultrafast recovery time,
the HEXFRED
®
product line features extremely low values of
peak recovery current (I
RRM
) and does not exhibit any
tendency to “snap-off” during the t
b
portion of recovery. The
HEXFRED features combine to offer designers a rectifier
with lower noise and significantly lower switching losses in
both the diode and the switching transistor. These
HEXFRED advantages can help to significantly reduce
snubbing, component count and heatsink sizes. The
HEXFRED VS-HFA30TA60CS is ideally suited for
applications in power supplies and power conversion
systems (such as inverters), motor drives, and many other
similar applications where high speed, high efficiency is
needed.
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
t
rr
(typ.)
T
J
max.
Diode variation
TO-263AB (D
2
PAK)
2 x 15 A
600 V
1.2 V
19 ns
150 °C
Common cathode
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Maximum continuous forward current
Single pulse forward current
Maximum repetitive forward current
Maximum power dissipation
Operating junction and storage temperature range
per leg
per device
SYMBOL
V
R
I
F
I
FSM
I
FRM
P
D
T
J
, T
Stg
T
C
= 25 °C
T
C
= 100 °C
T
C
= 100 °C
TEST CONDITIONS
VALUES
600
15
30
150
60
74
29
-55 to +150
°C
W
A
UNITS
V
Revision: 26-Feb-16
Document Number: 94071
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-HFA30TA60CSPbF
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS PER LEG
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Cathode to anode
breakdown voltage
SYMBOL
V
BR
I
R
= 100 μA
I
F
= 15 A
Maximum forward voltage
V
FM
I
F
= 30 A
I
F
= 15 A, T
J
= 125 °C
Maximum reverse
leakage current
Junction capacitance
Series inductance
I
RM
C
T
L
S
V
R
= V
R
rated
T
J
= 125 °C, V
R
= 0.8 x V
R
rated
V
R
= 200 V
See fig. 2
See fig. 3
See fig. 1
TEST CONDITIONS
MIN.
600
-
-
-
-
-
-
-
TYP.
-
1.3
1.5
1.2
1.0
400
25
8.0
MAX.
-
1.7
2.0
1.6
10
1000
50
-
μA
pF
nH
V
UNITS
Measured lead to lead 5 mm from package body
DYNAMIC RECOVERY CHARACTERISTICS PER LEG
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Reverse recovery time
See fig. 5, 10
Peak recovery current
See fig. 6
Reverse recovery charge
See fig. 7
Peak rate of fall of recovery
current during t
b
See fig. 8
SYMBOL
t
rr
t
rr1
t
rr2
I
RRM1
I
RRM2
Q
rr1
Q
rr2
dI
(rec)M
/dt1
dI
(rec)M
/dt2
TEST CONDITIONS
I
F
= 1.0 A, dI
F
/dt = 200 A/μs, V
R
= 30 V
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 15 A
dI
F
/dt = 200 A/μs
V
R
= 200 V
MIN.
-
-
-
-
-
-
-
-
-
TYP.
19
42
70
4.0
6.5
80
220
188
160
MAX.
-
60
90
6.0
10
180
450
-
A/μs
-
A
ns
UNITS
nC
THERMAL - MECHANICAL SPECIFICATIONS PER LEG
PARAMETER
Lead temperature
Junction to case,
single leg conducting
Junction to case,
both legs conducting
Thermal resistance,
junction to ambient
Weight
Mounting torque
Marking device
Case style TO-263AB (D
2
PAK)
SYMBOL
T
lead
TEST CONDITIONS
0.063" from case (1.6 mm) for 10 s
MIN.
-
-
R
thJC
-
R
thJA
Typical socket mount
-
-
-
6.0
(5.0)
-
-
2.0
0.07
-
0.85
80
-
-
12
(10)
g
oz.
kgf · cm
(lbf · in)
K/W
TYP.
-
-
MAX.
300
1.7
UNITS
°C
HFA30TA60CS
Revision: 26-Feb-16
Document Number: 94071
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-HFA30TA60CSPbF
www.vishay.com
I
F
- Instantaneous Forward Current (A)
Vishay Semiconductors
10 000
T
J
= 150 °C
100
I
R
- Reverse Current (μA)
1000
100
10
1
0.1
0.01
T
J
= 25 °C
T
J
= 125 °C
10
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
1
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
0
100
200
300
400
500
600
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current (Per Leg)
100
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Reverse Current vs. Reverse Voltage (Per Leg)
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
10
0
100
200
300
400
500
600
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
10
Z
thJC
- Thermal Response
1
P
DM
0.1
Single
pulse
(thermal response)
0.01
0.00001
0.0001
0.001
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.1
1
10
0.01
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
Revision: 26-Feb-16
Document Number: 94071
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-HFA30TA60CSPbF
www.vishay.com
100
I
F
= 30 A
I
F
= 15 A
I
F
= 5 A
600
800
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
I
F
= 30 A
I
F
= 15 A
I
F
= 5 A
400
Vishay Semiconductors
80
40
Q
rr
(nC)
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
1000
t
rr
(ns)
60
200
20
0
100
0
100
1000
dI
F
/dt (A/μs)
Fig. 5 - Typical Reverse Recovery Time vs. dI
F
/dt (Per Leg)
dI
F
/dt (A/μs)
Fig. 7 - Typical Stored Charge vs. dI
F
/dt (Per Leg)
25
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
10 000
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
20
dI
(rec)M
/dt (A/μs)
I
rr
(A)
15
I
F
= 30 A
I
F
= 15 A
I
F
= 5 A
1000
I
F
= 30 A
I
F
= 15 A
I
F
= 5 A
10
5
0
100
1000
100
100
1000
dI
F
/dt (A/μs)
Fig. 6 - Typical Recovery Current vs. dI
F
/dt (Per Leg)
dI
F
/dt (A/μs)
Fig. 8 - Typical dI
(rec)M
/dt vs. dI
F
/dt (Per Leg)
Revision: 26-Feb-16
Document Number: 94071
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-HFA30TA60CSPbF
www.vishay.com
Vishay Semiconductors
V
R
= 200 V
0.01
Ω
L = 70 μH
D.U.T.
dI
F
/dt
adjust
D
G
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
dI
(rec)M
/dt
(5)
0.75 I
RRM
(1)
dI
F
/dt
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 10 - Reverse Recovery Waveform and Definitions
Revision: 26-Feb-16
Document Number: 94071
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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参数对比
与HFA30TA60CSTRR相近的元器件有:VS-HFA30TA60CSTRRP、VS-HFA30TA60CSPBF、HFA30TA60CSTRL、VS-HFA30TA60CSTRLP。描述及对比如下:
型号 HFA30TA60CSTRR VS-HFA30TA60CSTRRP VS-HFA30TA60CSPBF HFA30TA60CSTRL VS-HFA30TA60CSTRLP
描述 Rectifiers 600 Volt 2x15 Amp Common Cathode Rectifiers 600 Volt 2x15 Amp Common Cathode Rectifiers 600 Volt 2x15 Amp Common Cathode Rectifiers 600 Volt 2x15 Amp Common Cathode Rectifiers 600 Volt 2x15 Amp Common Cathode
是否Rohs认证 不符合 符合 符合 不符合 符合
厂商名称 Vishay(威世) Vishay(威世) Vishay(威世) Vishay(威世) Vishay(威世)
包装说明 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2
Reach Compliance Code unknown compliant compliant unknown compliant
应用 GENERAL PURPOSE EFFICIENCY EFFICIENCY GENERAL PURPOSE -
外壳连接 CATHODE CATHODE CATHODE CATHODE -
配置 SINGLE COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS SINGLE -
二极管元件材料 SILICON SILICON SILICON SILICON -
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE -
JESD-30 代码 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 -
元件数量 1 2 2 1 -
相数 1 1 1 1 -
端子数量 2 2 2 2 -
最大输出电流 30 A 15 A 15 A 30 A -
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY -
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR -
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE -
峰值回流温度(摄氏度) NOT SPECIFIED 260 260 NOT SPECIFIED -
认证状态 Not Qualified - Not Qualified Not Qualified -
最大反向恢复时间 0.06 µs 0.06 µs 0.06 µs 0.06 µs -
表面贴装 YES YES YES YES -
端子形式 GULL WING GULL WING GULL WING GULL WING -
端子位置 SINGLE SINGLE SINGLE SINGLE -
处于峰值回流温度下的最长时间 NOT SPECIFIED 10 10 NOT SPECIFIED -
是否无铅 - 不含铅 不含铅 - 不含铅
ECCN代码 - EAR99 EAR99 - EAR99
JESD-609代码 - e3 e3 e0 -
端子面层 - MATTE TIN OVER NICKEL MATTE TIN (SN) - WITH NICKEL (NI) BARRIER TIN LEAD -
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00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
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