PD - 94169A
HFB20HJ20C
HEXFRED
Features
•
•
•
•
•
Reduced RFI and EMI
Reduced Snubbing
Extensive Characterization of Recovery Parameters
Hermetic
Surface Mount
TM
Ultrafast, Soft Recovery Diode
V
R
= 200V
I
F(AV)
= 20A
t
rr
= 20ns
Description
HEXFRED diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An
extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies
the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber
in most applications. These devices are ideally suited for power converters, motors drives and other applications
where switching losses are significant portion of the total losses.
TM
Absolute Maximum Ratings
Parameter
V
R
I
F(AV)
I
FSM
P
D
@ T
C
= 25°C
T
J,
T
STG
Cathode to Anode Voltage ( Per Leg )
Continuous Forward Current,
Q
T
C
= 85°C
Single Pulse Forward Current,
R
T
C
= 25°C ( Per Leg)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Max.
200
20
125
28
-55 to +150
Units
V
A
W
°C
Note:
Q
D.C. = 50% rect. wave
R
1/2 sine wave, 60 Hz , P.W. = 8.33 ms
CASE STYLE
(ISOLATED BASE)
ANODE
COMMON
CATHODE
ANODE
SMD-0.5
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5/08/01
HFB20HJ20C
Electrical Characteristics ( Per Leg ) @ T
J
= 25°C (unless otherwise specified)
Parameter
V
BR
V
F
Cathode Anode Breakdown Voltage
Forward Voltage
See Fig. 1
Min. Typ. Max. Units
200
—
—
—
—
—
—
—
—
—
—
—
—
4.8
—
1.26
1.11
1.30
0.96
10
1.0
20
—
µA
mA
pF
nH
V
V
Test Conditions
I
R
= 100µA
I
F
= 10A, T
J
= -55°C
I
F
= 10A, T
J
= 25°C
I
F
= 20A, T
J
= 25°C
I
F
= 10A, T
J
= 125°C
V
R
= V
R
Rated
V
R
= V
R
Rated, T
J
= 125°C
V
R
= 200V
Measured from center of cathode pad
to center of anode pad
See Fig. 2
I
R
Reverse Leakage Current
See Fig. 2
Junction Capacitance, See Fig. 3
Series Inductance
—
—
—
—
C
T
L
S
Dynamic Recovery Characteristics ( Per Leg )@ T
J
= 25°C (unless otherwise specified)
Parameter
t
rr
t
rr1
t
rr2
I
RRM1
I
RRM2
Q
rr1
Q
rr2
di
(rec)M
/dt1
di
(rec)M
/dt2
Reverse Recovery Time
Reverse Recovery Time
Peak Recovery Current
Reverse Recovery Charge
Peak Rate of Fall of Recovery Current
During t
b
Min.
—
—
—
—
—
—
—
—
—
Typ. Max. Units
—
27
42
3.5
5.5
54
120
640
850
20
—
—
—
—
—
—
—
—
ns
ns
Test Conditions
I
F
= 1.0A,V
R
= 30V, di
f
/dt = 200A/µs
T
J
= 25°C See Fig.
T
J
= 125°C
5
I
F
= 20A
T
J
= 25°C See Fig.
A
A
T
J
= 125°C
6
V
R
= 160V
T
J
= 25°C See Fig.
nC
T
J
= 125°C
7
di
f
/dt = 200A/µs
nC
T
J
= 25°C See Fig.
A/µs
8
A/µs T
J
= 125°C
Thermal - Mechanical Characteristics
Parameter
R
thJC
Wt
Junction-to-Case, Single Leg Conducting
Weight
Typ.
—
1.0
Max.
4.5
—
Units
°C/W
g
2
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HFB20HJ20C
100
100
10
125°C
100°C
Reverse Current - I R (µA)
1
75°C
0.1
25°C
0.01
0.001
Instantaneous Forward Current - I F (A)
0.0001
1E-005
0
50
100
150
200
10
Reverse Voltage - V R (V)
Fig. 2
- Typical Reverse Current Vs. Reverse
Voltage ( Per Leg )
100
Tj = 125°C
Tj = 25°C
Junction Capacitance - C T (pF)
T J = 25°C
Tj = -55°C
1
0.0
0.4
0.8
1.2
1.6
10
0
50
100
150
200
Forward Voltage Drop - V F (V)
Reverse Voltage - VR (V)
Fig. 1
- Maximum Forward Voltage Drop Vs.
Instantaneous Forward Current ( Per Leg )
10
Fig. 3
- Typical Junction Capacitance Vs.
Reverse Voltage ( Per Leg )
Thermal Response (Z
thJC
)
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.1
1
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.00001
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.1
0.0001
0.001
0.01
P
DM
t
1
t
2
1
t
1
, Rectangular Pulse Duration (sec)
Fig. 4
- Maximum Thermal Impedance Z
thjc
Characteristics ( Per Leg )
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HFB20HJ20C
50
100
IF = 40A
40
IF = 20A
IRRM - ( A )
IF = 10A
trr - ( ns )
IF = 20A
30
IF = 40A
IF = 10A
10
20
VR = 160V
TJ = 125°C
TJ = 25°C
VR = 160V
TJ = 125°C
TJ = 25°C
1
10
100
1000
100
1000
dif / dt - ( A / µs )
dif / dt - ( A / µs )
Fig. 5
- Typical Reverse Recovery Vs. di
f
/dt,( Per Leg)
Fig. 6
-Typical Recovery Current Vs. di
f
/dt ( Per Leg)
1000
10000
IF = 40A
IF = 10A
IF = 10A
di ( rec )M / dt - ( A / µs )
IF = 20A
IF = 20A
IF = 40A
1000
Qrr - ( nC )
100
VR = 160V
TJ = 125°C
TJ = 25°C
10
100
1000
VR = 160V
TJ = 125°C
TJ = 25°C
100
100
1000
dif / dt - ( A / µs )
dif / dt - ( A / µs )
Fig. 7
- Typical Stored Charge Vs. di
f
/dt ( Per Leg)
Fig. 8
- Typical di
(rec)M
/dt Vs. di
f
/dt ( Per Leg )
4
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HFB20HJ20C
3
I
F
t
rr
t
a
t
b
4
R E V E R S E R E C O V E R Y C IR C U IT
V
R
= 2 00 V
0
Q
rr
2
I
RRM
0.5 I
R R M
di(rec)M /dt
0.75 I
R R M
5
0.01
Ω
L = 70µH
D .U .T.
D
d if/d t
A D JU S T
G
IR F P 2 50
S
1
di
f
/dt
4. Q
rr
- Area under curve defined by t
rr
and I
RRM
t
rr
X I
RRM
Q
rr
=
2
5. di
(rec)M
/dt - Peak rate of change of
current during t
b
portion of t
rr
1. di
f
/dt - Rate of change of current
through zero crossing
2. I
RRM
- Peak reverse recovery current
3. trr - Reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current
Fig. 9
- Reverse Recovery Parameter Test Circuit
Fig. 10
- Reverse Recovery Waveform and Definitions
Case Outline and Dimensions — SMD-0.5
HEXFRED DOUBLE DIE
1 = COMMON CATHODE
2 = ANODE 1
3 = ANODE 2
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 05/01
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